• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.115-116
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• 2012

The demand for flexible electronic systems such as wearable computers, E-paper, and flexible displays has increased due to their advantages of excellent portability, conformal contact with curved surfaces, light weight, and human friendly interfaces over present rigid electronic systems. This seminar introduces three recent progresses that can extend the application of high performance flexible inorganic electronics. The first part of this seminar will introduce a RRAM with a one transistor-one memristor (1T-1M) arrays on flexible substrates. Flexible memory is an essential part of electronics for data processing, storage, and radio frequency (RF) communication and thus a key element to realize such flexible electronic systems. Although several emerging memory technologies, including resistive switching memory, have been proposed, the cell-to-cell interference issue has to be overcome for flexible and high performance nonvolatile memory applications. The cell-to-cell interference between neighbouring memory cells occurs due to leakage current paths through adjacent low resistance state cells and induces not only unnecessary power consumption but also a misreading problem, a fatal obstacle in memory operation. To fabricate a fully functional flexible memory and prevent these unwanted effects, we integrated high performance flexible single crystal silicon transistors with an amorphous titanium oxide (a-TiO2) based memristor to control the logic state of memory. The $8{\times}8$ NOR type 1T-1M RRAM demonstrated the first random access memory operation on flexible substrates by controlling each memory unit cell independently. The second part of the seminar will discuss the flexible GaN LED on LCP substrates for implantable biosensor. Inorganic III-V light emitting diodes (LEDs) have superior characteristics, such as long-term stability, high efficiency, and strong brightness compared to conventional incandescent lamps and OLED. However, due to the brittle property of bulk inorganic semiconductor materials, III-V LED limits its applications in the field of high performance flexible electronics. This seminar introduces the first flexible and implantable GaN LED on plastic substrates that is transferred from bulk GaN on Si substrates. The superb properties of the flexible GaN thin film in terms of its wide band gap and high efficiency enable the dramatic extension of not only consumer electronic applications but also the biosensing scale. The flexible white LEDs are demonstrated for the feasibility of using a white light source for future flexible BLU devices. Finally a water-resist and a biocompatible PTFE-coated flexible LED biosensor can detect PSA at a detection limit of 1 ng/mL. These results show that the nitride-based flexible LED can be used as the future flexible display technology and a type of implantable LED biosensor for a therapy tool. The final part of this seminar will introduce a highly efficient and printable BaTiO3 thin film nanogenerator on plastic substrates. Energy harvesting technologies converting external biomechanical energy sources (such as heart beat, blood flow, muscle stretching and animal movements) into electrical energy is recently a highly demanding issue in the materials science community. Herein, we describe procedure suitable for generating and printing a lead-free microstructured BaTiO3 thin film nanogenerator on plastic substrates to overcome limitations appeared in conventional flexible ferroelectric devices. Flexible BaTiO3 thin film nanogenerator was fabricated and the piezoelectric properties and mechanically stability of ferroelectric devices were characterized. From the results, we demonstrate the highly efficient and stable performance of BaTiO3 thin film nanogenerator.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.4
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• pp.31-37
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• 2017

Recently, there has been substantial interest in flexible and wearable devices whose properties and performances are close to conventional devices on hard substrates. Despite the advancement on flexible devices with organic semiconductors or carbon nanotube films, their performances are limited by the carrier scattering at the molecular to molecular or nanotube-to-nanotube junctions. Here in this study, we demonstrate on the vertical semiconductor crystal array embedded in flexible polymer matrix. Such structures can relieve the strain effectively, thereby accommodating large flexural deformation. To achieve such structure, we first established a low-temperature solution-phase synthesis of single crystalline 3D architectures consisting of epitaxially grown ZnO constituent crystals by position and growth direction controlled growth strategy. The ZnO vertical crystal array was integrated into a piece of polydimethylsiloxane (PDMS) substrate, which was then mechanically detached from the hard substrate to achieve the freestanding ZnO-polymer composite. In addition, the characteristics of transferred ZnO were confirmed by additional structural and photoluminescent measurements. The ZnO vertical crystal array embedded in PDMS was further employed as pressure sensor that exhibited an active response to the external pressure, by piezoelectric effect of ZnO crystal.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.173-179
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• 2006

We have investigated structural and electrical properties of $PbZr_{0.3}Ti_{0.7}O_{3}$ (PZT) thin films deposited by pulsed laser deposition methods. PZT thin films have been deposited on $LaMnO_3$ (LMO) bottom electrodes with $LaAlO_3$ (LAO) substrates during different deposition times. High-resolution x-ray diffraction data have shown that all the PZT films and bottom electrodes are highly oriented. The thickness of each film is determined by field-emission scanning electron microscope. We have also observed root mean square roughness by using atomic force microscopy mode, and local polarization distribution and retention behavior of a ferroelectric domain by using piezoelectric force microscopy mode. A PZT/LMO structure has shown good ferroelectric and retention properties as the media for nano-storage devices.

• The Journal of the Acoustical Society of Korea
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• v.22 no.3
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• pp.217-223
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• 2003

A novel cooling method induced by acoustic streaming generated by ultrasonic vibration at 30㎑ is presented. Ultrasonic vibration is obtained by piezoelectric devices and the maximum vibration amplitude of 50 m is achieved by including a horn, mechanical vibration amplifier in the system and making the complete system resonate. To investigate the enhancement of heat transfer capability of acoustic streaming, the temperature variations of heat source and air in the vicinity of heat source are measured in real-time. It is observed that acoustic streaming is instantly induced by ultrasonic vibration, resulting in the significant temperature drop due to the bulk air flow caused by acoustic streaming. In addition, it is observed that the cooling effect on the heat source is maximized when the gap between the ultrasonic vibrator and heat source coincides with the multiples of half-wavelength of the ultrasonic wave. This fact results from the resonance of the sound wave. The theoretical analysis of the dependence on the gap is also accomplished and verified by experiment. The advantage of the proposed cooling method by acoustic streaming is noise-free due to the ultrasonic vibration and maintenance-free because of the absence of moving parts. Moreover. This cooling method can be utilized to the nano and micro-electro mechanical systems, where the fan-based conventional cooling method can not be employed.

• Geomechanics and Engineering
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• v.25 no.3
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• pp.207-219
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• 2021

Several additives are used to enhance the geotechnical properties (e.g., shear wave velocity, shear modulus) of soils to provide sustainable, economical and eco-friendly solutions in geotechnical and geo-environmental engineering. In this study, piezoelectric ring actuators are used to measure the shear wave velocity of unreinforced, fiber, cemented, and fiber reinforced cemented Toyoura sand. One dimensional oedometer tests are performed on medium dense specimens of Toyoura sand-cement-fiber-silica flour mixtures with different percentages of silica flour (0-42%), fiber and cement (e.g., 0-3%) additives. The experimental results indicate that behavior of the mixtures is significantly affected by the concentration of silica flour, fiber and cement additives. Results show that with the addition of 1-3% of PVA fibers, the shear wave velocity increases by only 1-3%. However, the addition of 1-4% of cement increases the shear wave velocity by 8-35%. 10.5-21% increase of silica flour reduces the shear wave velocity by 2-5% but adding 28-42% silica flour significantly reduces the shear wave velocity by 12-31%. In addition, the combined effect of cement and fibers was also found and with only 2% cement and 1% fiber, the shear wave velocity increase was found to be approximately 24% and with only 3% cement and 3% fibers this increased to 35%. The results from this study for the normalized shear modulus and normalized mean effective stress agree well with previous findings on pure Toyoura sand, Toyoura silty sand, fiber reinforced, fiber reinforced cemented Toyoura sand. Any variations are likely due to the difference in stress history (i.e., isotropic versus anisotropic consolidation) and the measurement method. In addition, these small discrepancies could be attributed to several other factors. The potential factors include the difference in specimen sizes, test devices, methods of analysis for the measurement of arrival time, the use of an appropriate Ko to convert the vertical stresses into mean effective stress, and sample preparation techniques. Lastly, it was investigated that there is a robust inverse relationship between α factor and 𝞫₀ exponent. It was found that less compressible soils exhibit higher 𝜶 factors and lower 𝞫₀ exponents.

• Journal of IKEEE
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• v.22 no.1
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• pp.205-208
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• 2018

In this work, we performed reverse- and forward-gate bias stress tests on normally-off AlGaN/GaN high electron mobility transistors(HEMTs) with p-AlGaN-gate for reliability assessment. Inverse piezoelectric effect, commonly observed in Schottky-gate AlGaN/GaN HEMTs during reverse bias stress, was not observed in p-AlGaN-gate AlGaN/GaN HEMTs. Forward gate bias stress tests revealed distinct degradation of p-AlGaN-gate devices exhibiting sudden increase of gate leakage current. We suggest that forward gate bias stress tests should be performed to define the failure criteria and assess the reliability of normally off p-AlGaN-gate GaN HEMTs.

• Journal of Ocean Engineering and Technology
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• v.29 no.1
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• pp.34-44
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• 2015

A hydraulic tensile test machine (HSTM) is one of the devices used to obtain the flow stress of a material during high-speed elongation. This paper first describes some features of a newly built HSTM. The improvement histories of the upper and lower jigs, which are the most vital parts of the HSTM, are also presented. We have frequently witnessed test failures with 1st generation jigs and specimens due to slip between the jig and specimen. 2nd generation jigs provide more stable test results, but the use of a longer upper jig induces excessive vibration and consequently makes it difficult to attach an environment chamber. 3rd generation jigs have some advances in terms of the symmetric fastening between the upper jig and specimen, as well as an exemption from direct contact between the lower jig and specimen. The performance of an environment chamber is verified by high and low temperature tests. A high-speed displacement measurement system is introduced based on a high-speed camera and motion-tracking software with aid of a surface grid device for the specimen.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.744-746
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• 1992

In this study, we investigated structural, electrical characteristics and studied the conditions which improved hydrostatic constants in hydrophones as we changed x = 0.1, 0.25, 0.35, 0.4 and y = 0.04, 0.08, 0.12, 0.16 in $(Pb_{1-x}Ca_x)[(Mg_{1/3}Nb_{2/3})_yTi_{1-0.01}Mn_{0.01}]O_3$ ceramics in which Ca was substituted with Pb and $Pb(Mg_{1/3}Nb_{2/3})O_3$ was added to decrease sintering temperature in $PbTiO_3$. When Ca was substituted 0.25[mol], the largest electro-mechanical anisotropy ($k_t/k_p$) was found ($k_t{\fallingdotseq}50,k_p{\fallingdotseq}4$), and the less $Pb(Mg_{1/3}Nb_{2/3})O_3$ and the stronger poling field, the larger this anisotropy was. When Ca=0.25[mol], $Pb(Mg_{1/3}Nb_{2/3})O_3=0.08[mol]$ were substituted, ($k_t/k_p$)(=12, 3) was large, permittivity was low and hydrostatic constants were high. Therefore, this composition is promising as wide band ultrasonic devices in water.

• Journal of Sensor Science and Technology
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• v.12 no.6
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• pp.265-272
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• 2003

This paper describes anodic bonding characteristics of MLCA (Multi Layer Ceramic Actuator) to Si-wafer using evaporated Pyrex #7740 glass thin-films for MEMS applications. Pyrex #7740 glass thin-films with same properties were deposited on MLCA under optimum RF magneto conditions(Ar 100%, input power $1\;W/cm^2$). After annealing in $450^{\circ}C$ for 1 hr, the anodic bonding of MLCA and Si-wafer was successfully performed at 600 V, $400^{\circ}C$ in - 760 mmHg. Then, the MLCA/Si bonded interface and fabricated Si diaphragm deflection characteristics were analyzed through the actuation test. It is possible to control with accurate deflection of Si diaphragm according to its geometries and its maximum non-linearity is 0.05-0.08 %FS. Moreover, any damages or separation of MLCA/Si bonded interfaces do not occur during actuation test. Therefore, it is expected that anodic bonding technology of MLCA/Si wafers could be usefully applied for the fabrication process of high-performance piezoelectric MEMS devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.208-208
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• 2010

Zinc oxide (ZnO) is a functional material with interesting optical and electrical properties, a wide band gap (more than 3.3 eV), a high transmittance in the visible light region, piezoelectric properties, and a high n-type conductivity. This material has been investigated for use in many applications, such as transparent electrodes, blue light-emitting diodes, and ultra-violet detector. ZnO films grown under low oxygen pressure by thin film deposition methods show low resistivity and large free electron concentration. Therefore, reducing the background carrier concentration in ZnO films is one of the major challenges ahead of realizing high-performance ZnO-based optoelectronic devices. In this study, we deposited ZnO thin films on sapphire substrates by pulsed laser deposition (PLD) with employing an oxygen plasma source to decrease the background free-electron concentration and enhance the crystalline quality. Then, the substrate temperature was varied between 200 'C to 900 'C The vacuum chamber was initially evacuated to a pressure of $10^{-6}$ Torr, and then a pure $O_2$ gas was introduced into the chamber and the pressure during deposition was maintained at $10^{-2}$ Torr. Crystallinity and orientation of ZnO films were investigated by X-ray diffraction (XRD). The film surface was analyzed with atomic force microscope (AFM). And electrical properties were measured at room temperature by Hall measurement.