• 제목/요약/키워드: Piezoelectric devices

검색결과 339건 처리시간 0.025초

The effect of nano-sized starting materials and excess amount of Bi on the dielectric/piezoelectric properties of 0.94[(BixNa0.5)TiO3]-0.06[BaTiO3] lead free piezoelectric ceramics

  • Khansur, Neamul Hayet;Ur, Soon-Chul;Yoon, Man-Soon
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 추계학술발표대회
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    • pp.31.1-31.1
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    • 2009
  • In an approach to acclimate ourselves torecent ecological consciousness trend, a lead-free piezoelectric material, bismuth sodium titanate (abbreviated as BNT) based bismuth sodium barium titanate (abbreviated as BNT-BT), was considered as an environment-friendly alternative for a lead based piezoelectric system. Ceramic specimens of0.94[(BixNa0.5)TiO3]-0.06[BaTiO3] (x = 0.500~0.515) compositions were prepared by a modified mixed oxide method. To increase the chemical homogeneity andre action activity, high energy mechanical milling machine and pre-milled nanosized powder has been used. In this method (BixNa0.5)TiO3 (x=0.500~0.515) andBaTiO3 were prepared separately from pre-milled constituent materials at low calcination temperature and then separately prepared BNTX (X=1, 2, 3 and 4) and BT were mixed by high energy mechanical milling machine. Without further calcination step the mixed powders were pressed into disk shape and sintered at $1110^{\circ}C$. Microstructures, phase structures and electrical properties of the ceramic specimens were systematically investigated. Highly dense ceramic specimens with homogenous grains were prepared in spite of relatively low sintering temperature. Phase structures were not significantly influenced by the excess amount Bi. Large variation on the piezoelectric and dielectric properties was detected at relative high excess Bi amounts. When $x{\leq}0.505$, the specimens exhibit insignificant variation in piezoelectric and dielectric constant though depolarization temperature is found to be decreased. Considerable amount of decrease in piezoelectric and dielectric properties are observed with higher excess of Bi amounts ($x{\geq}0.505$). This research indicates the advantages of high energy mechanical milling and importance of proper maintenance of Bi stoichiometry.

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이식형 인공중이를 위한 압전 플로팅 매스 트랜스듀서의 제안 (Proposal of a piezoelectric floating mass transducer for implantable middle ear hearing devices)

  • 이창우;김민규;박일용;송병섭;노용래;조진호
    • 센서학회지
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    • 제14권5호
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    • pp.322-330
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    • 2005
  • A new type of transducer, piezoelectric floating mass transducer (PFMT) which has advantages of piezoelectric and electromagnetic transducer has been proposed and implemented for the implantable middle ear hearing devices. By the uneven bonding of piezoelectric material to the inner bottom of transducer case, the PFMT can vibrate back-and-forth along the longitudinal axis of the transducer even though the piezoelectric material within the cylindrical case produces only the bilateral expansion and contraction according to the applied electrical signal. To improve efficiency of the PFMT, the multi-layered piezoelectric material has been adapted. The small number of components in the PFMT enables the simple manufacturing and the easy implanting into the middle ear. In order to examine the characteristics of vibration, mechanical modeling and finite element analyses of the proposed transducer have been performed. From the result of theoretical analyses and the measured data from the experiment, it is verified that the implemented PFMT can be used in implantable middle ear hearing devices.

Flutter Suppression of Cantilevered Plate Wing using Piezoelectric Materials

  • Makihara, Kanjuro;Onoda, Junjiro;Minesugi, Kenji
    • International Journal of Aeronautical and Space Sciences
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    • 제7권2호
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    • pp.70-85
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    • 2006
  • The supersonic flutter suppression of a cantilevered plate wing is studied with the finite element method and the quasi-steady aerodynamic theory. We suppress wing flutter by using piezoelectric materials and electric devices. Two approaches to flutter suppression using piezoelectric materials are presented; an energy-recycling semi-active approach and a negative capacitance approach. To assess their flutter suppression performances, we simulate flutter dynamics of the plate wing to which piezoelectric patches are attached. The critical dynamic pressure drastically increases with our flutter control using a negative capacitor.

압전 수정 결정 미량 천평[PZ QCM] 바이오센서의 원리와 응용 (The Theory and Application or Piezoelectric Quartz Crystal Microbalance[PZ QCM] for Biosensor)

  • 김의락
    • KSBB Journal
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    • 제18권2호
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    • pp.79-89
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    • 2003
  • This article contains an overview of acoustic wave devices, the theory and application of piezoelectric quartz crystal microbalances(PZ QCM), clinical analysis, gas phase detection, DNA biosensors, drug analysis, food microbial analysis and environmental analysis.

박막형 FBAR 공진기 설계 및 제작 (FBAR devices for RF bandpass filter applications)

  • Yoon, Gi-Wan;Park, Sung-Chang
    • 한국정보통신학회논문지
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    • 제5권7호
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    • pp.1321-1325
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    • 2001
  • 본 논문에서는 압전박막 및 이들의 FBAR소자 응용에 대한 연구를 발표 한다. FBAR소자는 상부 및 하부 전극 사이에 압전체가 삽입되어 있는 공진부와 SiO2/W 이 여러층으로 적층되어 있는 음향반사층부분 크게 두 부분으로 구성되어 있다. 시뮬레이션 및 측정을 통하여 제작된 여러가지 FBAR 소자들을 평가하였다. 실험결과 우수한 삽입손실, 반사손실 및 풀질계수가 얻어졌다. 따라서 FBAR 기술은 RF 대역 필터 응용을 위해서 대단히 유망한 기술로 생각된다.

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RF 대역통과필터 응용을 위한 FBAR 소자 (FBAR devices for RF bandpass filter applications)

  • Giwan Yoon;Park, Sungchang
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2001년도 추계종합학술대회
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    • pp.621-625
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    • 2001
  • 본 논문에서는 압전박막 및 이들의 FBAR 소자 응용에 대한 연구를 발표 한다. FBAR 소자는 상부 및 하부 전극 사이에 압전체가 삽입되어 있는 공진부와 SiO$_2$/W 이 여러층으로 적층되어 있는 음향반사층부분 크게 두 부분으로 구성되어 있다. 시뮬레이션 및 측정을 통하여 제작된 여러가지 FBAR 소자들을 평가하였다. 실험결과 우수한 삽입손실, 반사손실 및 품질계수가 얻어졌다. 따라서 FBAR 기술은 RF 대역 필터 응용을 위해서 대단히 유망한 기술로 생각된다.

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적층형 압전 변압기의 내부전극에 따른 구조적 특성 (Structural Characteristics of Multilayer Piezoelectric Transformer According to Designs of Internal Electrode)

  • 임인호;박종주;정회승;이영희
    • 한국전기전자재료학회논문지
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    • 제14권11호
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    • pp.898-903
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    • 2001
  • In this study, we investigated amounts, distributions and sizes of pores of multilayer piezoelectric transformer, and predicted heat emission property and electrical characteristics according to designs of internal electrode. Forming densities of device having MLC, fingered and full filled internal electrode structure were 4.73 g/㎤, 4.80 g/㎤, 4.82 g/㎤ and forming porosities were 17.3737%, 13.1475%, 12.6121%, respectively. And sintered densities of MLC structured, fingered and full filled devices were 7.76 g/㎤, 7.75 g/㎤, 7.84 g/㎤ and sintered porosities were 4.0967%, 2.7132%, 2.5317%, respectively. Therefore, we concluded that fingered and full fi1led internal electrode devices, expecially, fingered internal electrode devices had cost-effective effect and maximum poling effect due to higher sintered density and lower porosity than MLC structured device. Also we can predict that they have an effect on good heat emission and high output properties of multilayer piezoelectric transformer.

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The compact size piezoelectric transformer to lower an operating voltage of plasma display devices

  • Choi, Chung-Sock;Ahn, Sung-Il;Choi, Kyung-Cheol
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.719-720
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    • 2009
  • We suggest a new approach to lower the operating voltage of plasma display devices using a piezoelectric transformer (PT). $Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3$ (PMNT) was used as a piezoelectric material. The Rosen-type PT, with a compact size of 10 mm ${\times}$ 20 mm ${\times}$ 0.3 mm, was fabricated on a glass substrate. The fabricated PT was operated as a half-wave vibration mode at around 80~90 kHz. The maximum voltage step-up ratio was 3 at 87.8 kHz when the input voltage was 10.32 V (peak-to-peak).

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Examining the qualification of copper magnetic nanocatalyst design and its application in piezoelectric sensor

  • Yufeng Pang;Xiaojuan Li
    • Structural Engineering and Mechanics
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    • 제85권6호
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    • pp.743-753
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    • 2023
  • Piezoelectricity is defined as the ability of certain materials to produce electric signals when mechanically stressed or to deform when an electrical potential is applied. Piezo technology is becoming increasingly crucial as intelligent devices use vibration sensors to detect vibrations in consumer electronics, the automotive industry, architectural design, and other applications. A wide range of applications is now possible with piezoelectric sensors, such as skin-attachable devices that monitor health and detect diseases. In this article, copper nanoparticles are used in the piezoelectric sensor as the driving agent of the magnetic field. Magnetic nanocatalysts containing copper nanoparticles are used due to their cheapness and availability. Considering that the increase of the electric field acting on the piezoelectric increases the damping (As a result, damping materials reduce radiation noise and increase material transfer losses by altering the natural vibration frequency of the vibrating surface). Among the advantages of this method are depreciating a significant amount of input energy using high energy absorption capacity and controlling slight vibrations in the sensors.

PZT-PMN Ceramics for Large Displacement Piezoelectric Devices

  • Lim, Kee-Joe;Park, Jae-Yeol;Lee, Jong-Sub;Kang, Seong-Hwa;Kim, Hyun-Hoo
    • Transactions on Electrical and Electronic Materials
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    • 제5권2호
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    • pp.76-80
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    • 2004
  • Piezoelectric and dielectric properties as functions of x and y mole ratio in yPb(ZrxTil-x)O$_3$(1-y)Pb(Mn$\_$1/3/Nb/2/3/)O$_3$, ceramics, PZT-PMN, are investigated for large displacement piezoelectric devices. From the experimental results, when y is 0.95 and x is 0.505, the piezoelectric and dielectric properties are maximum, that is, electromechanical coupling coefficient(kp), piezoelectric strain constant(d$\_$33/), permittivity($\varepsilon$$\_$33/$\^$T//$\varepsilon$$\_$0/), and Curie temperature are 58 %, 272 pC/N, 1520 and about 350$^{\circ}C$, respectively. Also, when y is 0.90 and x is 0.50, their properties are 56 %, 242 pC/N, 1220, and 290$^{\circ}C$, respectively. As MgO dopant is added from 0 wt% to 1 wt%, kp increases to 63 % and Qm decreases to 500 at the MgO dopant of 0.1 wt%, and then kp decreases to 57 % as MgO is added.