• Journal of the Microelectronics and Packaging Society
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• v.12 no.3 s.36
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• pp.267-274
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• 2005

This paper presents the fabrication of surface acoustic wave (SAW)-based pressure sensor for long-term stable mechanical compression force measurement. SAW pressure sensor has many attractive features for practical pressure measurement: no battery requirement, wireless pressure detection especially at hazardous environments, and easy other functionality integrations such as temperature, humidity, and RFID. A $41^{\circ}$ YX $LiNbO_3$ piezoelectric substrate was used because of its high SAW propagation velocity and large values of electromechanical coupling factors $K^2$. A silicon substrate with $\~200{\mu}m$ deep cavity was bonded to the diaphragm with epoxy, in which gold was covered all over the inner cavity in order to confine electromagnetic energy inside the sensor, and provide good isolation of the device from its environment. The reflection coefficient $S_{11}$ was measured using network analyzer. High S/N ratio, sharp reflected peaks, and clear separation between the peaks were observed. As a mechanical compression force was applied to the diaphragm from top with extremely sharp object, the diaphragm was bended, resulting in the phase shifts of the reflected peaks. The phase shifts were modulated depending on the amount of applied mechanical compression force. The measured $S_{11}$ results showed a good agreement with simulated results obtained from equivalent admittance circuit modeling.

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.3383-3388
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• 2007

To compare the sensor performance of AE leak diagnosis system which can measure valve leak conditions, AE activities such as RMS voltage level, AE signal trend, leak rate degree according to AE database, FFT spectrum were measured on valve of the simulated test system for power plant. AE activities were recorded and analyzed from various operating conditions including different temperature, pressure difference, valve size and fluid using both piezoelectric acoustic emission sensor and Pb-Free acoustic emission sensor. The results of this study are utilized to select the type of sensors, the frequency band for filtering and thereby to improve the signal-to-noise ratio for diagnosis or monitoring of valves in operation. As the final result of application study above, portable type leak diagnosis system by AE was developed. The outcome of the study can be definitely applied as a means of the diagnosis or monitoring system for energy saving and prevention of accident for power plant valve.

• Journal of Sensor Science and Technology
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• v.23 no.2
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• pp.142-147
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• 2014

Real time driver's respiration monitoring method for detecting driver's drowsiness is investigated. The sensor to obtain driver's respiration signal was a piezoelectric pressure sensor attached at the abdominal region of the seat belt. The resistance of the pressure sensor was changed according to the pressure applied to the seat belt due to the driver's respiration. Monitoring driver's respiration was carried out by driving on the virtual road in a driving simulator from Cheonan to Seoul and monitoring results were compared to the PELCLOS. Experiment results show that the driver's respiration signal can be used for detecting driver's drowsiness.

• Journal of Sensor Science and Technology
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• v.32 no.1
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• pp.22-30
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• 2023

Innovative and advanced technologies, including robots, augmented reality, virtual reality, the Internet of Things, and wearable medical equipment, have largely emerged as a result of the rapid evolution of modern society. For these applications, pressure monitoring is essential and pressure sensors have attracted considerable interest. To improve the sensor performance, several new designs of pressure sensors have been researched based on resistive, capacitive, piezoelectric, optical, and triboelectric types. In particular, optical pressure sensors have been actively studied owing to their advantages, such as robustness to noise and remote sensing capability. Herein, a review of recent research on optical pressure sensors with self-powered sensing, remote sensing, high spatial resolution, and multimodal sensing capabilities is presented from the viewpoints of design, fabrication, and signal processing.

• Journal of Electrical Engineering and information Science
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• v.3 no.2
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• pp.239-244
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• 1998

Piezoelectric pressure sensors and pyroelectric infrared detectors based on ZnO thin film have been integrated with GaAs metal-semiconductor field effect transistor (MESFET) amplifiers. Surface micromachining techniques have been applied in a GaAs MESFET process to form both microsensors and electronic circuits. The on-chip integration of microsensors such as pressure sensors and infrared detectors with GaAs integrated circuits is attractive because of the higher operating temperature up to 200 oC for GaAs devices compared to 125 oC for silicon devices and radiation hardness for infrared imaging applications. The microsensors incorporate a 1${\mu}$m-thick sputtered ZnO capacitor supported by a 2${\mu}$m-thick aluminum membrane formed on a semi-insulating GaAs substrate. The piezoelectric pressure sensor of an area 80${\times}$80 ${\mu}$m2 designed for use as a miniature microphone exhibits 2.99${\mu}$V/${\mu}$ bar sensitivity at 400Hz. The voltage responsivity and the detectivity of a single infrared detector of an area 80${\times}$80 $\mu\textrm{m}$2 is 700 V/W and 6${\times}$108cm$.$ Hz/W at 10Hz respectively, and the time constant of the sensor with the amplifying circuit is 53 ms. Circuits using 4${\mu}$m-gate GaAs MESFETs are fabricated in planar, direct ion-implanted process. The measured transconductance of a 4${\mu}$m-gate GaAs MESFET is 25.6 mS/mm and 12.4 mS/mm at 27 oC and 200oC, respectively. A differential amplifier whose voltage gain in 33.7 dB using 4${\mu}$m gate GaAs MESFETs is fabricated for high selectivity to the physical variable being sensed.

• Korean Journal of Materials Research
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• v.17 no.5
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• pp.289-292
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• 2007

Although piezoelectric bimorph that is using as the sensor in medical and industrial measurement has large displacement, it has problems including efficiency in generating force, energy convergence, and response. Its application is being limited based on the change in resonance frequency with temperature. In this study, to overcome the disadvantages, PZT piezoelectric ceramics was prepared and produced a parallel type piezoelectric bimorphs. In addition, by using the finite element method. the configuration of piezoelectric bimorph was designed and the displacement of the bimorph based on applied electric pressure and the wave pattern were measured. By analyzing the resonance characteristics of the bimorph in the temperature range of $-60{\sim}80^{\circ}C$, an attempt was made to study the operational characteristics and temperature reliability of vortex flowmeter sensor. As a result, the resonance frequency of the bimorph was gradually increased with the temperature from $-60{\sim}80^{\circ}C$. The deflection of the bimorph was found to strongly depend on both the applied electric field waveform and the environmental temperature.

• Journal of KSNVE
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• v.8 no.3
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• pp.428-434
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• 1998

Optimal design of a piezoelectric smart structure is studied for cabin noise control. A cubic shaped acoustic cavity with a flat plate which covers one side is taken as the problem. The sensor signal is returned to the actuator through a negative gain. The acoustic cavity is modeled using the modal approach which represents the pressure fields in the cavity as a sum of mode shapes of the cavity with unknown coefficients. By using orthogonality of the mode shapes of the cavity, finite element equation for the structure with the influence of the acoustic cavity is derived. The objective function is the average pressure at a certain region, so-called silent zone, in the cavity and the design variables are the locations and sizes of the piezoelectirc actuator and sensor. The optimal design is performed at several frequencies and the results show a remarkable noise reduction. To see the robustness of the optimally designed result, the configuration is used to examine the noise reduction at different frequencies. By adjusting the gain at each frequencies, it is possible to reduce the noise in comparison with the result when the actuator is not activated.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1996.11a
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• pp.1012-1016
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• 1996

This paper presents an automatic calibration technique for piezoelectic low pressure transducer, which is useful to measure a pressure within 500 psi. This system with automatic calibration function and error correction algorithm generates standard dynamic pressure for the calibration of sensor. With the compensation for the offset voltage and the pressure error, the accuracy and the usefulness of the proposed scheme is validated.

• Journal of Mechanical Science and Technology
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• v.20 no.11
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• pp.1993-2001
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• 2006

The piezoelectric bimorph film, which, as an actuator, can generate more effective displacement than the usual PVDF film, is used to control the turbulent boundary-layer flow. The change of wall pressures inside the turbulent boundary layer is observed by using the multi-channel microphone array flush-mounted on the surface when actuation at the non-dimensional frequency $f_b^+$:=0.008 and 0.028 is applied to the turbulent boundary layer. The wall pressure characteristics by the actuation to produce local displacement are more dominantly influenced by the size of the actuator module than the actuation frequency. The movement of large-scale turbulent structures to the upper layer is found to be the main mechanism of the reduction in the wall- pressure energy spectrum when the 700$700{\nu}/u_{\tau}$-long bimorph film is periodically actuated at the non- dimensional frequency $f_b^+$:=0.008 and 0.028. The biomorph actuator is triggered with the time delay for the active forcing at a single frequency when a 1/8' pressure-type, pin-holed microphone sensor detects the large-amplitude pressure event by the turbulent spot. The wall-pressure energy in the late-transitional boundary layer is partially reduced near the convection wavenumber by the open-loop control based on the large amplitude event.

• Journal of Sensor Science and Technology
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• v.4 no.2
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• pp.7-13
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• 1995

A new FET type semiconductor pressure sensor (PSFET : pressure sensitive field effect transistor) was fabricated and its operational characteristics were investigated. A ZnO thin film as a piezoelectric layer, $5000{\AA}$ thick, was deposited on a gate oxide of FET by RF magnetron sputtering. The deposition conditions to obtain a c-axis poling structure were substrate temperature of $300^{\circ}C$, RF power of 140watt, and working pressure of 5mtorr in Ar ambience. The fabricated PSFET device showed good linearity and stability in the applied pressure range($1{\times}10^{5}\;Pa{\sim}4{\times}10^{5}\;Pa$).