• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.32 no.4
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• pp.18-23
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• 2004

In this paper, material non-linear behavior of PZT wafer(3203HD, CTS) under high electric field and stress is experimentally investigated and the non-linearity of the PZT wafer is numerically simulated. Empirical functions that can represent the non-linear behavior of the PZT wafer have been extracted based on the measured piezo-strain under stress. The functions are implemented in an incremental finite element formulation for material non-linear analysis. New definition of the piezoelectric constant and the incremental strain are incorporated into the finite element formulation for a better reproduction of the non-linear behavior. With the new definition of the in incremental piero-strain the measured non-linear behavior of the PZT wafer has been accurately reproduced even for high electric field. For validation of the measured non-linear characteristics and the proposed approach, a PZT bimorph beam actuator has been numerically and experimentally tested. The predicted actuation displacement, based on the material nonlinear finite element analysis, showed a good agreement with the measured one.

• 정보저장시스템학회:학술대회논문집
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• 2005.10a
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• pp.22-25
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• 2005

In this research, a wafar-level transfer method of cantilever array on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride ($Si_3N_4$) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric $Si_3N_4$ cantilevers. In this process, we did not use a SOI wafer but a conventional p-type wafer for the fabrication of the thermo-piezoelectric $Si_3N_4$ cantilever arrays. Furthermore, we have developed a very simple transfer process, requiring only one step of cantilever transfer process for the integration of the CMOS wafer and cantilevers. Using this process, we have fabricated a single thermo-piezoelectric $Si_3N_4$ cantilever, and recorded 65nm data bits on a PMMA film and confirmed a charge signal at 5nm of cantilever deflection. And we have successfully applied this method to transfer 34 by 34 thermo-piezoelectric $Si_3N_4$ cantilever arrays on a CMOS wafer. We obtained reading signals from one of the cantilevers.

• Transactions of the Society of Information Storage Systems
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• v.2 no.2
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• pp.96-99
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• 2006

In this research, a wafer-level transfer method of cantilever away on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride ($Si_3N_4$) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric $Si_3N_4$ cantilevers. In this process, we did not use a SOI wafer but a conventional p-type wafer for the fabrication of the thermo-piezoelectric $Si_3N_4$ cantilever arrays. Furthermore, we have developed a very simple transfer process, requiring only one step of cantilever transfer process for the integration of the CMOS wafer and cantilevers. Using this process, we have fabricated a single thermo-piezoelectric $Si_3N_4$ cantilever, and recorded 65nm data bits on a PMMA film and confirmed a charge signal at 5nm of cantilever deflection. And we have successfully applied this method to transfer 34 by 34 thermo-piezoelectric $Si_3N_4$ cantilever arrays on a CMOS wafer. We obtained reading signals from one of the cantilevers.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.30 no.4 s.247
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• pp.350-357
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• 2006

A new valveless micropump for bi-directional application has been developed and tested. The micropump was fabricated on silicon and glass substrates by micromachining process. The micropump in this study consists of a membrane actuator, a pumping chamber, fluidic channels and two piezoelectric ceramic films. The channels and pumping chamber were etched on a glass wafer and the membrane was made on a silion wafer which is actuated by a piezoelectric ceramic (PZT) film. The geometry of the micropump was optimized by numerical analysis and the performance of the micropump was investigated by the experiments. The maximum flow rate was $323{\mu}L/min$ and the maximum back pressure was 294 Pa when the membrane actuator of $10{\times}10mm^2$ was driven at 130 Hz and 385 V.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 2009.04a
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• pp.239-242
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• 2009

구조물의 표면에 부착된 압전소자(이하 PZT)의 전기역학적 어드미턴스(Electro-mechanical admittance)는 PZT와 구조물의 상호작용에 의해 발생하는 PZT의 압전효과와 유전성(dielectric)이 결합되어 발생되는 신호이다. 고주파수 대역에서 PZT의 전기역학적 어드미턴스는 구조물의 국부손상에 민감하게 반응하는 것으로 알려져 있다. 실험에서 측정된 PZT의 전기역학적 어드미턴스 분석에 널리 쓰이는 Liang 모델은 구조물을 단자유도계로 단순화하여 구조물의 동적특성이 전기역학적 어드미턴스에 미치는 영향을 정확하게 나타내기 어렵다. 유한요소법을 통해 PZT와 구조물의 상호작용을 해석하면 이러한 문제점을 해결할 수 있다. 그러나 고주파 대역에서 정확한 해석을 위해서는 유한요소망을 조밀하게 구성해야 하므로 많은 계산비용이 수반된다. 이 연구에서는 유한요소법과 비교하여 월등히 적은 계산비용으로 고주파 대역의 동적 응답을 매우 정확하게 모사할 수 있는 스펙트럼 요소법(Spectral Element Method ; 이하 SEM)을 통해 판구조물에 부착된 PZT의 전기-역학적 어드미턴스를 해석한다. 수치 예제 및 실험 예제를 통하여 내민보에 부착된 PZT에서 발생하는 전기-역학적 어드미턴스를 취득하고 이를 SEM해석 결과와 비교한다.

• Smart Structures and Systems
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• v.16 no.5
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• pp.835-851
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• 2015

This paper presents theoretical and experimental evaluation of the structural health monitoring (SHM) capability of piezoelectric wafer active sensors (PWAS) at elevated temperatures. This is important because the technologies for structural sensing and monitoring need to account for the thermal effect and compensate for it. Permanently installed PWAS transducers have been One of the extensively employed sensor technologies for in-situ continuous SHM. In this paper, the electro-mechanical impedance spectroscopy (EMIS) method has been utilized as a dynamic descriptor of PWAS behavior and as a high frequency standing wave local modal technique. Another SHM technology utilizes PWAS as far-field transient transducers to excite and detect guided waves propagating through the structure. This paper first presents how the EMIS method is used to qualify and quantify circular PWAS resonators in an increasing temperature environment up to 230 deg C. The piezoelectric material degradation with temperature was investigated and trends of variation with temperature were deduced from experimental measurements. These effects were introduced in a wave propagation simulation software called Wave Form Revealer (WFR). The thermal effects on the substrate material were also considered. Thus, the changes in the propagating guided wave signal at various temperatures could be simulated. The paper ends with summary and conclusions followed by suggestions for further work.

• Smart Structures and Systems
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• v.9 no.1
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• pp.21-33
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• 2012

In this study, a Lamb-wave based damage detection approach is proposed for damage localization in plate. A sensor network consisting of three PZT wafer type actuators/sensors is used to generate and detect Lamb waves. To minimize the complication resulted from the multimode and dispersive characteristics of Lamb waves, the fundamental symmetric Lamb mode, $S_0$ is selectively generated through designing the excitation frequency of the narrowband input signal. A damage localization algorithm based upon the configuration of the PZT sensor network is developed. Time-frequency analysis method is applied to purify the raw signal and extract damage features. Experimental result obtained from aluminum plate verified the proposed damage localization approach.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.37 no.1
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• pp.217-229
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• 2017

The high-frequency electro-mechanical signatures, which are excited and received by piezoelectric wafers mounted on a beam, are sensitive to incipient defect in a beam. Predicting the sensing range of the piezoelectric wafers is needed to effectively conduct damage assessment of a beam through utilizing their advantage. Damping of a beam plays the most important role in determining the sensing range among other features. This paper has proposed a scheme for estimating high-frequency damping of a beam through electro-mechanical signatures of piezoelectric wafers mounted on the beam. Considering damping effect while resonance of a beam evolves, wave perspective is adopted to formulate the electro-mechanical signatures of piezoelectric wafers. The damping of a beam is estimated through the least squares method minimizing the difference between the calculated and the measured damping ratio function values which are obtained from formulated and measured electro-mechanical signatures, respectively. The validity of the proposed scheme has been demonstrated through numerical and experimental examples using an aluminum beam with collocated piezoelectric wafers.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.83-89
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• 2015

In this paper, we propose a fabrication technique for enhanced electrical properties of piezoelectric thick films with excellent patterning property using sol-infiltration and a direct-patterning process. To achieve the needs of high-density and direct-patterning at a low sintering temperature (< $850^{\circ}C$), a photosensitive lead zirconate titanate (PZT) solution was infiltrated into a screen-printed thick film. The direct-patterned PZT films were clearly formed on a locally screen-printed thick film, using a photomask and UV light. Because UV light is scattered in the screen-printed thick film of a porous powder-based structure, there are needs to optimize the photosensitive PZT sol infiltration process for obtaining the enhanced properties of PZT thick film. By optimizing the concentration of the photosensitive PZT sol, UV irradiation time, and solvent developing time, the hybrid films prepared with 0.35 M of PZT sol, 4 min of UV irradiation and 15 sec solvent developing time, showed a very dense with a large grain size at a low sintering temperature of $800^{\circ}C$. It also illustrated enhanced electrical properties (remnant polarization, $P_r$, and coercive field, $E_c$). The $P_r$ value was over four times higher than those of the screen-printed films. These films integrated on silicon wafer substrate could give a potential of applications in micro-sensors and -actuators.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.228-228
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• 2010

본 연구에서는 공진주파수 수식을 이용한 MATLAB과 Modal 해석법을 사용한 ANSYS로 공진주파수 특성을 시뮬레이션 하였다. 외팔보의 시뮬레이션 결과에서는 길이가 길어짐에 따라, 또는 proof mass의 크기가 커짐에따라 공진주파수 특성이 낮아지는 결과가 나타났다. 따라서 본 실험에서의 외팔보는 낮은 공진 주파수를 가지기 위해 Si proof mass를 사용하여 제작하였다. 외팔보 소자는 Silicon-on-insulator wafer를 사용하여 SiO2/Ti/Pt/PZT/Pt 박막을 증착하였고, 마스크를 사용한 식각 공정으로 제작하였다. 이때의 MATLAB, ANSYS 시뮬레이션 결과와 실험에서 제작된 소자는 유사한 공진주파수 특성을 나타내었다.