통합 검색 | Korea Science

신동식;서정;김정오
- 한국레이저가공학회지
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- 제13권4호
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- pp.7-13
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- 2010
Today, the most common process for generating Through Silicon Vias (TSVs) for 3D ICs is Deep Reactive Ion Etching (DRIE), which allows for high aspect ratio blind holes with low surface roughness. However, the DRIE process requires a vacuum environment and the use of expensive masks. The advantage of using lasers for TSV drilling is the higher flexibility they allow during manufacturing, because neither vacuum nor lithography or masks arc required and because lasers can be applied even to metal and to dielectric layers other than silicon. However, conventional nanosecond lasers have the disadvantage of causing heat affection around the target area. By contrast, the use of a picosecond laser enables the precise generation of TSVs with less heat affected zone. In this study, we conducted a comparison of thermalization effects around laser-drilled holes when using a picosecond laser set for a high pulse energy range and a low pulse energy range. Notably, the low pulse energy picosecond laser process reduced the experimentally recast layer, surface debris and melts around the hole better than the high pulse energy process.
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신동식;서정;조용권;이내응
- 한국레이저가공학회지
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- 제14권4호
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- pp.14-20
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- 2011
The advantage of using lasers for through silicon via (TSV) drilling is that they allow higher flexibility during manufacturing because vacuums, lithography, and masks are not required; furthermore, the lasers can be applied to metal and dielectric layers other than silicon. However, conventional nanosecond lasers have disadvantages including that they can cause heat affection around the target area. In contrast, the use of a picosecond laser enables the precise generation of TSVs with a smaller heat affected zone. In this study, a comparison of the thermal and crystallographic defect around laser-drilled holes when using a picosecond laser beam with varing a fluence and repetition rate was conducted. Notably, the higher fluence and repetition rate picosecond laser process increased the experimentally recast layer, surface debris, and dislocation around the hole better than the high fluence and repetition rate. These findings suggest that even the picosecond laser has a heat accumulation effect under high fluence and short pulse interval conditions. To eliminate these defects under the high speed process, the CDE (chemical downstream etching) process was employed and it can prove the possibility to applicate to the TSV industry.
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이민영;김동호
- 한국광학회지
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- 제5권1호
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- pp.90-99
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- 1994
모드록킹된 피코초 레이저, 고속전자장치, 전자관형 광증배관 등을 사용하여, 피코초 분해능을 갖는 시간상관 단광자 계수 장치 및 시분해 스펙트럼 측정 장치를 제작하였다. 기기감음함수는 레이저의 펄스모양, 고속전자장치의 timing jitter 및 walk, 광증배관과 증폭기의 특성에 민감함을 보여주었다. 광학계의 분산등을 보정하여 25 ps의 반치폭을 갖는 기기감응함수를 얻었으며, 이와 같은 결과는 이 장치를 사용할 경우 deconvolution을 통하여 10 ps 이하의 분해능으로 피코초에서 마이크로초의 넓은 범위에 걸쳐서 여기상태 소멸시간의 측정이 가능함을 보여준다.
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신동식;이제훈;서정;노지환;정용운;김재구
- 한국정밀공학회:학술대회논문집
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- 한국정밀공학회 2006년도 춘계학술대회 논문집
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- pp.653-654
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- 2006
In case of ultrashort laser ablation of metals, the transfer of energy from the electronic system causing strong absorption of laser light to the lattice needs relaxation times of the order of some picoseconds. Under the above theoretical background, nickel was ablated using femtosecond, picosecond and nanosecond laser. As a result, nickel ablation by picosecond laser and femtosecond laser, which are called ultrashort laser, has similar machinability because of relaxation time of metals, whereas nanosecond Nd:YAG laser has lower absorption, higher thermalization effect in comparison with ultrashort laser.
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이승엽;신용섭
- 한국전자파학회논문지
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- 제14권11호
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- pp.1143-1148
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- 2003
CPW와 마이크로스트립선로에서 수십 피코초의 펄스 폭을 갖는 가우시안(Gaussian) 펄스 신호가 진행해 갈 때 기판 및 선로 구조에 따른 분산 및 펄스의 전파 특성을 시간 영역에서 해석하고 측정하였다. 특히, 선로에 사용된 기판의 기본 TE 모드에 대한 차단 주파수( $f_{TE}$ )의 변화에 따른 CPW와 마이크로스트립 선로간의 전송특성을 구하고 비교하였다. 이를 실험적으로 확인하기 위해 $f_{TE}$ 가 다른 기판에 두 가지 50 $\Omega$ 선로를 제작하여 수십 피코초 펄스가 진행되었을 때의 전송 특성을 시간 영역 분석기능이 내장된 VNA(Vector Network Analyzer)를 이용해서 측정하였다.
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