• Journal of the Korean Solar Energy Society
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• v.32 no.4
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• pp.24-33
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• 2012

Recently, finishing materials at spandrel area, a part of curtain-wall system, are gradually forced to improve thermal insulation performance in order to enhance the building energy efficiency. Also, Building Integrated Photovoltaics(BIPV) systems have been installed in the exterior side of the spandrel area, which is generally composed of windows. Those BIPVs aim to achieve high building energy efficiency and supply the electricity to building. However, if transparent BIPV module is combined with high insulated spandrel, it would reduce the PV efficiency for two major reasons. First, temperature in the air space, located between window layer and finishing layer of the spandrel area, can significantly increase by solar heat gain, because the space has a few air density relative to other spaces in building. Secondly, PV has a characteristics of decreased Voltage(Voc and Vmp) with the increased temperature on the PV cell. For these reasons, this research analyzed a direct interrelation between PV Cell temperature and electricity generation performance under different insulation conditions in the spandrel area. The different insulation conditions under consideration are 1) high insulated spandrel(HIS) 2) low insulated spandrel(LIS) 3) PV stand alone on the ground(SAG). As a result, in case of 1) HIS, PV temperature was increased and thus electricity generation efficiency was decreased more than other cases. To be specific, each cases' maximum temperature indicated that 1) HIS is $83.8^{\circ}C$, 2) LIS is $74.2^{\circ}C$, and 3) SAG is $66.3^{\circ}C$. Also, each cases yield electricity generation like that 1) HIS is 913.3kWh/kWp, 2) LIS is 942.8kWh/kWp, and 3) SAG is 981.3kWh/kWp. These result showed that it is needed for us to seek to the way how the PV Cell temperature would be decreased.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.65-65
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• 2012

Copper zinc tin sulfide ($Cu_2ZnSnS_4$, CZTS) is a very promising material as a low cost absorber alternative to other chalcopyrite-type semiconductors based on Ga or In because of the abundant and economical elements. In addition, CZTS has a band-gap energy of 1.4~1.5eV and large absorption coefficient over ${\sim}10^4cm^{-1}$, which is similar to those of $Cu(In,Ga)Se_2$(CIGS) regarded as one of the most successful absorber materials for high efficient solar cell. Most previous works on the fabrication of CZTS thin films were based on the vacuum deposition such as thermal evaporation and RF magnetron sputtering. Although the vacuum deposition has been widely adopted, it is quite expensive and complicated. In this regard, the solution processes such as sol-gel method, nanocrystal dispersion and hybrid slurry method have been developed for easy and cost-effective fabrication of CZTS film. Among these methods, the hybrid slurry method is favorable to make high crystalline and dense absorber layer. However, this method has the demerit using the toxic and explosive hydrazine solvent, which has severe limitation for common use. With these considerations, it is highly desirable to develop a robust, easily scalable and relatively safe solution-based process for the fabrication of a high quality CZTS absorber layer. Here, we demonstrate the fabrication of a high quality CZTS absorber layer with a thickness of 1.5~2.0 ${\mu}m$ and micrometer-scaled grains using two different non-vacuum approaches. The first solution-processing approach includes air-stable non-toxic solvent-based inks in which the commercially available precursor nanoparticles are dispersed in ethanol. Our readily achievable air-stable precursor ink, without the involvement of complex particle synthesis, high toxic solvents, or organic additives, facilitates a convenient method to fabricate a high quality CZTS absorber layer with uniform surface composition and across the film depth when annealed at $530^{\circ}C$. The conversion efficiency and fill factor for the non-toxic ink based solar cells are 5.14% and 52.8%, respectively. The other method is based on the nanocrystal dispersions that are a key ingredient in the deposition of thermally annealed absorber layers. We report a facile synthetic method to produce phase-pure CZTS nanocrystals capped with less toxic and more easily removable ligands. The resulting CZTS nanoparticle dispersion enables us to fabricate uniform, crack-free absorber layer onto Mo-coated soda-lime glass at $500^{\circ}C$, which exhibits a robust and reproducible photovoltaic response. Our simple and less-toxic approach for the fabrication of CZTS layer, reported here, will be the first step in realizing the low-cost solution-processed CZTS solar cell with high efficiency.

• Clean Technology
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• v.23 no.2
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• pp.121-132
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• 2017

The increase of greenhouse gases and the concern of global warming instigate the development and spread of renewable energy and hydrogen is considered one of the clean energy sources. Hydrogen is one of the most elements in the earth and exist in the form of fossil fuel, biomass and water. In order to use hydrogen for a clean energy source, the hydrogen production method should be eco-friendly and economic as well. There are two different hydrogen production methods: conventional thermal method using fossil fuel and renewable method using biomass and water. Steam reforming, autothermal reforming, partial oxidation, and gasification (using solid fuel) have been considered for hydrogen production from fossil fuel. When using fossil fuel, carbon dioxide should be separated from hydrogen and captured to be accepted as a clean energy. The amount of hydrogen from biomass is insignificant. In order to occupy noticeable portion in hydrogen industries, biomass conversion, especially, biological method should be sufficiently improved in a process efficiency and a microorganism cultivation. Electrolysis is a mature technology and hydrogen from water is considered the most eco-friendly method in terms of clean energy when the electric power is from renewable sources such as photovoltaic cell, solar heat, and wind power etc.

• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.239-246
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• 1999

A highly sensitive photovoltaic infrared photodiode was fabricated for detecting infrared light in $3{\sim}5\;{\mu}m$ wavelength range on InSb wafer with p-i-n structure grown by MOCVD. Silicon dioxide($SiO_2$) insulating films for the junction interface and surface of photodiode were prepared using RPCVD because InSb has low melting point and evaporation temperature. After formation of In ohmic contacts by thermal evaporation, the electrical properties of the photodiode were characterized in dark state at 77K. A product of zero-bias resistance and area($R_0A$) showed $1.56{\times}10^6\;{\Omega}{\cdot}cm^2$ that satisfied BLIP(background limited infrared photodetector) condition. When the photodiode was tested under infrared light, the normalized detectivity of about $10^{11}\;cm{\cdot}Hz^{1/2}{\cdot}W^{-1}$ was obtained. we successfully fabricated a unit cell with InSb IR array with good quantum efficiency and high detectivity.

• Journal of Energy Engineering
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• v.23 no.4
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• pp.31-40
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• 2014

The Korean government made the 2nd Energy Basic Plan to achieve 11% of new and renewable energies distribution rate until 2035 as a response to cope with international discussion about greenhouse gas emission reduction. Renewable energies include solar thermal, photovoltaic, bioenergy, wind power, small hydropower, geothermal energy, ocean energy, and waste energy. New energies contain fuel cells, coal gasification and liquefaction, and hydrogen. As public and private investment to enhance the distribution of new and renewable energies, it is necessary to clarify the economic effects of the new and renewable energies sector. To the end, this study attempts to apply an input-output analysis and analyze the economic effects of new and renewable energies sector using 2012 input-output table. Three topics are dealt with. First, production-inducing effect, value-added creation effect, and employment-inducing effect are quantified based on demand-driven model. Second, supply shortage effects are analyzed employing supply-driven model. Lastly, price pervasive effects are investigated applying Leontief price model. The results of this analysis are as follows. First, one won of production or investment in new and renewable energies sector induces 2.1776 won of production and 0.7080 won of value-added. Moreover, the employment-inducing effect of one billion won of production or investment in new and renewable energies sector is estimated to be 9.0337 persons. Second, production shortage cost from one won of supply failure in new and renewable energies sector is calculated to be 1.6314 won, which is not small. Third, the impact of the 10% increase in new and renewable energies rate on the general price level is computed to be 0.0123%, which is small. This information can be utilized in forecasting the economic effects of new and renewable energies sector.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.