• 제목/요약/키워드: Photovoltaic-thermal

검색결과 307건 처리시간 0.054초

국내 태양광자원의 경년변화 (A Change of Yearly Solar Radiation Energy Resources in Korea)

  • 조덕기;강용혁
    • 한국태양에너지학회 논문집
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    • 제30권2호
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    • pp.81-86
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    • 2010
  • Since the solar energy resource is the main input for sizing any solar photovoltaic system and solar thermal power system, it is essential to utilize the solar radiation data as a application and development of solar energy system increase. It will be necessary to understand and evaluate the insolation data. The Korea Institute of Energy Research(KIER) has begun collecting horizontal global insolation data since May, 1982 and direct normal insolation data since December 1992 at 16 different locations in Korea. Because of a poor reliability of existing data, KIER's new data will be extensively used by solar energy system users as well as by research institutes. From the results, the yearly averaged horizontal global insolation was turned out 3.60kWh/$m^2$/day and a significant difference of horizontal global insolation is observed between 1982~1990 and 1991~1999, 2000~2008 through 16 different cities in Korea.

유연 염료감응형 광전지 저온공정법 연구개발 동향 (A Brief Review on Low-temperature Techniques for Flexible-Dye Sensitized Photovoltaics)

  • 장준환;유기천;강형철;이재준
    • Current Photovoltaic Research
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    • 제11권1호
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    • pp.1-7
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    • 2023
  • Flexible dye sensitized photovoltaics (f-DSPVs) based on plastic substrates have attracted significant interest due to their light-weight, flexibility, and compatibility with roll-to-roll processing, as well as their potential application to ubiquitous power sources. However, f-DSPVs exhibit inferior power conversion efficiencies (PCE) compared to conventional DSPVs since the fabrication process must be conducted at a low-temperature (≤ 150℃) to prevent thermal damage of the plastic substrates, which generally results in poor interconnection between the TiO2 nanoparticles. Numerous novel low-temperature manufacturing approaches for flexible photoanode and counter electrode have been developed. In this review, current progress on low temperature strategies for f-DSPVs technology are discussed.

Super Junction MOSFET의 트렌치 식각 각도에 따른 열 특성 분석에 관한 연구 (Thermal Characteristics according to Trench Etch angle of Super Junction MOSFET)

  • 강이구
    • 전기전자학회논문지
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    • 제18권4호
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    • pp.532-535
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    • 2014
  • 본 논문에서는 Super Juction MOSFET의 우수한 열 특성을 검증하기 위해 도출된 공정 및 설계파라미터를 이용하여 열특성을 분석하였다. 열 특성 중 핵심공정인 Trench 식각 각도에 따른 온도차이, 열 저항, 그 때 흐르는 드레인 전류를 측정하여 전체 소비전력을 분석하였다. 분석한 결과 Trench 식각 각도가 $89.3^{\circ}$ 일 때 온도차와 열 저항 값이 가장 작게 나왔으며, 식각 각도에 따라서 분포는 경향성을 보이지 않았다. 따라서 반복 시뮬레이션과 실험을 통해 최적의 값을 도출해야 되며, 본 측정 결과 최적의 식각 각도는 $89.3^{\circ}$$89.6^{\circ}$의 결과를 보였다. 다른 전기적인 특성을 고려하여 최종 식각 각도를 보여야 하며, 열 특성의 우수한 SJ MOSFET이 산업에의 이용을 위해 본 논문의 자료가 충분히 활용할 수 있을 것으로 판단된다.

염료감응형 태양전지 광전극의 초음파 열처리를 통한 광전효율 개선에 관한 연구 (A Study of Photo-electric Efficiency Improvement using Ultrasonic and Thermal Treatment on Photo-electrode of DSC)

  • 김희제;김용철;최진영;김호성;이동길;홍지태
    • 전기학회논문지
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    • 제57권5호
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    • pp.803-807
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    • 2008
  • A making process of DSC(dye sensitized solar cell) was presented. In general, Photo electrodes of DSC was made by using colloid paste of nano $TiO_2$ and processing of Doctor-blade printing and high temperature sintering for porous structure. These methods lead to cracks on $TiO_2$ surface and ununiform of $TiO_2$ thickness. This phenomenon is one factor that makes low efficiency to cells. After $TiO_2$ printing on TCO glass, a physical vibration was adapted for reducing ununiform of $TiO_2$ thickness. And a thermal treatment at low temperature(under $75^{\circ}C$) was adapted for reducing cracks on $TiO_2$ surface. In this paper, we have designed and manufactured an ultrasonic circuit (100W, frequency and duty variable) and a thermal equipment. Then, we have optimized forcing time, frequency and duty of ultrasonic irradiation and thermal heating for surface treatment of photo-electrode of DSC. In I-V characteristic test of DSC, ultrasonic and thermal treated DSC shows 19% improved its efficiency against monolithic DSC. And it shows stability of light-harvesting from drastically change of light irradiation test.

Characteristics of p-Cu2O/n-Si Heterojunction Photodiode made by Rapid Thermal Oxidation

  • Ismail, Raid A.
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제9권1호
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    • pp.51-54
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    • 2009
  • Transparent Cuprous oxide film was deposited by rapid thermal oxidation (RTO) of Cu at $500^{\circ}C$/45s condition on textured single-crystal n-Si substrate to form $Cu_2O$/n-Si heterojunction photodiode. The Hall effect measurements for the $Cu_2O$ films showed a p-type conductivity. The photovoltaic and electrical properties of the junction at room temperature were investigated without any post-deposition annealing. I-V characteristics revealed that the junction has good rectifying properties. The C-V data showed abrupt junction and a built-in potential of 1 V. The photodiode showed good stability and high responsivity in the visible at three regions; 525 nm, 625-700 nm, and 750nm denoted as regions A, B, and C, respectively.

열처리 온도 변화에 따른 라디오파 마그네트론 스퍼터링으로 성장된 MgMoO4:Eu3+ 형광체 박막의 특성 (Properties of MgMoO4:Eu3+ Phosphor Thin Films Grown by Radio-frequency Magnetron Sputtering Subjected to Thermal Annealing Temperature)

  • 조신호
    • Current Photovoltaic Research
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    • 제4권1호
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    • pp.25-29
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    • 2016
  • $Eu^{3+}$-activated $MgMoO_4$ phosphor thin films were grown at $400^{\circ}C$ on quartz substrates by radio-frequency magnetron sputter deposition from a 15 mol% Eu-doped $MgMoO_4$ target. After the deposition, the phosphor thin films were annealed at several temperatures for 30 min in air. The influence of thermal annealing temperature on the structural and optical properties of $MgMoO_4:Eu^{3+}$ phosphor thin films was investigated by using X-ray diffraction (XRD), photoluminescence (PL), and ultraviolet-visible spectrophotometry. The transmittance, optical band gap, and intensities of the luminescence and excitation spectra of the thin films were found to depend on the thermal annealing temperature. The XRD patterns indicated that all the thin films had a monoclinic structure with a main (220) diffraction peak. The highest average transmittance of 91.3% in the wavelength range of 320~1100 nm was obtained for the phosphor thin film annealed at $800^{\circ}C$. At this annealing temperature the optical band gap energy was estimated as 4.83 eV. The emission and excitation spectra exhibited that the $MgMoO_4:Eu^{3+}$ phosphor thin films could be effectively excited by near ultraviolet (281 nm) light, and emitted the dominant 614 nm red light. The results show that increasing RTA temperature can enhance $Eu^{3+}$ emission and excitation intensity.

Research on the Power Drop of Photovoltaic Module’s Aging Through the Thermal Shock Test

  • Kang, MinSoo;Jeon, YuJae;Kim, DoSeok;Shin, YoungEui
    • Transactions on Electrical and Electronic Materials
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    • 제16권5호
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    • pp.268-273
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    • 2015
  • While analyzing the specimens before and after the thermal shock test, we found that the power drop rate of the bare cell was 5.08%, while the power drop rate of the ribboned cell was 16.49%. In comparative terms, the efficiency was lower at the ribboned cell than at the bare cell. While analyzing through EL (Electroluminescence) shots and cross sections, we tried to decipher the exact cause of the power drop. Although mere color change of the cell was observed at the surface of the bare cell, no abnormality could be found inside the cell. On the surface of the ribboned cell, the short circuit of gridfinger extended from the front part of the front electrode of the ribboned cells. Therefore, cracks occurred on the surface of the cell. Cracks also appeared inside the cell. While analyzing the I-V curve, we determined an increase in the leakage current and an increase of resistances in series in the bare cell. In the ribboned cell, the resistances in parallel reduced remarkably. An increase of resistances in series could also be verified. Conclusively, we deduced that the power drop rate in the bare cell is a life span of the cell itself; aging is the cause of power drop rate in cells. In case of ribboned cell, the power drop rate was directly influenced by internal cracks and an intermetallic compound layer joining the ribbon at the front electrode.

스펜드럴부 적용 BIPV 모듈의 열 특성 분석 (Analysis on Thermal Performance of BIPV in Spandrel)

  • 김하련;김진희;강기환;유권종;김준태
    • 한국태양에너지학회:학술대회논문집
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    • 한국태양에너지학회 2011년도 추계학술발표대회 논문집
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    • pp.364-369
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    • 2011
  • Recently, the cases of BIPV(Building-integrated Photovoltaic) have been increased with interest in renewable energy application for buildings. PV System in building can perform a variety of roles as an energy supplier, exterior materials, aesthetic element and etc. To apply PV modules in buildings, various factors should be considered, such as the installation angle and orientation of PV module, shading, and temperature. The temperature of PV modules that are attached to building surfaces especially is one of the most important factors, as it affects both the electrical efficiency of a PV module and the energy load in a building. BIPV modules designed as finished material for spandrels are presented in this paper. The purpose of this study is to analysis on the thermal performance characteristics of BIPV modules. This study dealt with different types of BIPV modules depending on the backside material, such as clear glass and backsheet. The analysis of monitoring data shows that the PV module temperature was closely related to the solar radiation on the BIPV module surface, and the BIPV used at the backside also had an effect on the PV module temperature that in turn determines its thermal performance.

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폐태양전지(廢太陽電池)용 솔라리본으로부터 구리회수(回收)에 관한 연구(硏究) (Recovery of Copper from Spent Photovoltaic Ribbon in Solar Module)

  • 이진석;장보윤;김준수;안영수;강기환;왕제필
    • 자원리싸이클링
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    • 제22권5호
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    • pp.50-55
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    • 2013
  • 폐 태양광 전지내의 구리리본전극으로부터 구리를 회수하기 위해 불활성 가스분위기하에서 $300-600^{\circ}C$로 열처리 하였다. 구리리본전극의 코팅층은 68.99 wt.%의 납과 31.21 wt.%의 주석으로 구성되어 있는데, 각각의 온도에서 코팅층을 용해한 후 반응도가니에 용해된 코팅층 회수하였다. 열처리 후 회수되어진 코팅층은 ICP-MS (Inductively coupled plasma mass spectrometry)로 성분 분석을 실시하였으며, 온도범위에 관계없이 95 wt.% 이상의 구리순도를 얻을 수 있었다. 구리리본전극 샘플의 횡단면은 SEM (scanning electron microscopy) and EDX (energy dispersive X-ray microscopy)로 관찰하였다.

방열 특성에 따른 집광형 태양전지의 광전변환효율 변화에 관한 실험적 연구 (An Experimental Study on the Heat Transfer Characteristics of the Conversion Efficiency in the Concentrated Photovoltaic Cells)

  • 김강호;정상현;김영조;김창주;전동환;신현범;이재진;강호관
    • Current Photovoltaic Research
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    • 제2권4호
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    • pp.168-172
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    • 2014
  • Under concentrated illuminations, the solar cells show higher efficiencies mainly due to an increase of the open circuit voltage. In this study, InGaP/InGaAs/Ge triple-junction solar cells have been grown by a low pressure metalorganic chemical vapor deposition. Photovoltaic characteristics of the fabricated solar cells are investigated with a class A solar simulator under concentrated illuminations from 1 to 100 suns. Ideally, the open circuit voltage should increase with the current level when maintained at the same temperature. However, the fabricated solar cells show degraded open circuit voltages under high concentrations around 100 suns. This means that the heat sink design is not optimized to keep the cell temperature at $25^{\circ}C$. To demonstrate the thermal degradation, changes of the device performance are investigated with different bonding conditions and heat sink materials.