• 한국군사과학기술학회지
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• 제1권1호
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• pp.227-237
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• 1998

HgCdTe Is the most versatile material for the developing infrared devices. Not like III-V compound semiconductors or silicon-based photo-detecting materials, HgCdTe has unique characteristics such as adjustable bandgap, very high electron mobility, and large difference between electron and hole mobilities. Many research groups have been interested in this material since early 70's, but mainly due to its thermodynamic difficulties for preparing materials, no single growth technique is appreciated as a standard growth technique in this research field. Solid state recrystallization(SSR), travelling heater method(THM), and Bridgman growth are major techniques used to grow bulk HgCdTe material. Materials with high quality and purity can be grown using these bulk growth techniques, however, due to the large separation between solidus and liquidus line on the phase diagram, it is very difficult to grow large materials with minimun defects. Various epitaxial growth techniques were adopted to get large area HgCdTe and among them liquid phase epitaxy(LPE), metal organic chemical vapor deposition(MOCVD), and molecular beam epitaxy(MBE) are most frequently used techniques. There are also various types of photo-detectors utilizing HgCdTe materials, and photovoltaic and photoconductive devices are most interested types of detectors up to these days. For the larger may detectors, photovoltaic devices have some advantages over power-requiring photoconductive devices. In this paper we reported the main results on the HgCdTe growing and characterization including LPE and MOCVD, device fabrication and its characteristics such as single element and linear array($8{\times}1$ PC, $128{\times}1$ PV and 4120{\times}1$ PC). Also we included the results of the dewar manufacturing, assembling, and optical and environmental test of the detectors.

• 한국인터넷방송통신학회논문지
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• 제23권2호
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• pp.157-162
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• 2023

태양광발전 설비의 고장 중 서지에 의한 고장이 전체 고장률의 20% 차지하고 있으며 발전 중 수십에서 수백[A]의 에너지 방출과 인버터, 접속반 등의 전기적 손상은 전기안전사고로 이어지고 있다. 특히 낙뢰의 경우 전기회로에 이상 전압이 유기되어 절연을 파괴할 뿐만 아니라 이때 흐르는 전류는 화재의 원인이 되고 부품의 열화를 촉진하는 요인으로 작용한다. 이러한 작용으로 도심 밖에서 주택, 아파트, 관공서 등의 도심 내부로 확산하고 있는 태양광 발전장치의 전기 안전 문제가 대두되고 있다. 낙뢰는 필드 기반 및 전도성 전기 간섭을 유발하기에 이 효과는 케이블 길이 또는 도체 루프 증가와 관련하여 증가한다. 또한 서지는 태양광 모듈, 인버터 및 모니터링장치뿐만 아니라 건물 설비의 장치도 손상하기에 최종적으로는 태양광발전시스템의 화재로 인한 운영 중단과 이에 따른 재정손실을 유발하게 시킬 수 있다. 따라서 본 논문에서는 태양광발전시스템의 낙뢰발생으로 인한 화재 및 전기안전사고 증가로 인하여 재산피해 및 인명피해를 줄일 수 있는 목적으로 태양광발전장치의 낙뢰보호 시스템을 연구하고자 한다.

• 전기전자학회논문지
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• 제14권3호
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• pp.199-204
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• 2010

본 논문에서는 전력반도체의 내압을 유지하는데 있어서 가장 중요한 필드 링의 개선을 위해 새로운 구조의 필드 링을 제안하였다. 제안한 트렌치 필드 링은 기존의 일반 필드 링에 비해 10%이상 효율을 개선하였다. 트렌치 필드 링의 설계를 위해 5가지의 변수를 두고 최적화 시뮬레이션을 수행하였으며, 수행한 파라미터 결과를 가지고 마스크를 설계하여 제작을 진행하였다. 내압이 증가하면 증가할 수록 트렌치 필드링이 일반 필드 링보다 더 좋은 결과를 가져올 수 있었다. 이러한 결과는 앞으로 전력반도체 소자인 IGBT, Power MOS 및 MCT 소자의 설계에 충분히 활용할 수 있을 것으로 판단된다.

• 한국정밀공학회지
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• 제31권11호
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• pp.975-979
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• 2014

Transparent conductive films (TCF) with excellent electrical properties and high mechanical flexibility have been widely studied because of their potential for application in optoelectronic devices such as light-emitting diodes, paper displays and organic solar cells. In this paper, we report on low-resistance and high-transparent TCF for flexible device applications. To fabricate a high-resolution roll imprinted TCF, the following steps were performed: the design and manufacture of an electroforming stamp mold, the fabrication of high-resolution roll imprinted on flexible film, the manufacture of Ag-nano paste which was filled into patterned film using a doctor blade process. Also, we was demonstrated with the successful application(ITO free organic photovoltaic) of the developed flexible TCF.

• 한국결정성장학회지
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• 제6권3호
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• pp.424-430
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• 1996

태양전지의 공정중 고온공정을 줄여줌으로서 최종 태양전지의 가격을 저가화할 수가 있다. 이 논문은 점액 상태의 인을 희석시켜서 접촉 홈에 확산공정을 마친 후, 그 기본 특성을 조사하였다. 점액상태점의 희석도와 스핀속도가 산화막의 두께에 영향을 미치는 것이 확인되었다. 희석도가 높을수록 산화막은 두꺼워지고 균일도는 낮아졌다. 희석도 60%의 인이 홈에서의 균일도와 깊이를 고려할 때 가장 적당한 것으로 사료된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.91-91
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• 2012

We aim in synthesizing various functional thin films thinner than ~ 10 nm for environmental applications and photovoltaic devices. Atomic layer deposition is used for synthesizing inorganic thin films with a precise control of the film thickness. Several examples about application of our thin films for removing volatile organic compounds (VOC) will be highlighted, which are summarized in the below. 1) $TiO_2$ thin films prepared by ALD at low temperature ($<100^{\circ}C$) show high adsorption capacity for toluene. In combination with nanostructured templates, $TiO_2$ thin films can be used as building-block of high-performing VOC filter. 2) $TiO_2$ thin films on carbon fibers and nanodiamonds annealed at high temperatures are active for photocatalytic oxidation of VOCs, i.e. photocatalytic filter can be created by atomic layer deposition. 3) NiO can catalyze oxidation of toluene to $CO_2$ and $H_2O$ at $<300^{\circ}C$. $TiO_2$ thin films on NiO can reduce poisoning of NiO surfaces by reaction intermediates below $200^{\circ}C$. We also fabricated inverted organic solar cell based on ZnO electron collecting layers on ITO. $TiO_2$ thin films with a mean diameter less than 3 nm on ZnO can enhance photovoltaic performance by reducing electron-hole recombination on ZnO surfaces.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.306.1-306.1
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• 2016

ZnO semiconductor material has been widely utilized in various applications in semiconductor device technology owing to its unique electrical and optical features. It is a promising as solar cell material, because of its low cost, n-type conductivity and wide direct band gap. In this work ZnO/Si heterojunctions were fabricated by using pulsed laser deposition. Vacuum chamber was evacuated to a base pressure of approximately $2{\times}10^{-6}Torr$. ZnO thin films were grown on p-Si (100) substrate at oxygen partial pressure from 5mTorr to 40mTorr. Growth temperature of ZnO thin films was set to 773K. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnO target, whose density of laser energy was $10J/cm^2$. Thickness of all the thin films of ZnO was about 300nm. The optical property was characterized by photoluminescence and crystallinity of ZnO was analyzed by X-ray diffraction. For fabrication ZnO/Si heterojunction diodes, indium metal and Al grid patterns were deposited on back and front side of the solar cells by using thermal evaporator, respectively. Finally, current-voltage characteristics of the ZnO/Si structure were studied by using Keithly 2600. Under Air Mass 1.5 Global solar simulator with an irradiation intensity of $100mW/cm^2$, the electrical properties of ZnO/Si heterojunction photovoltaic devices were analyzed.

• 전자공학회논문지A
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• 제31A권2호
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• pp.88-93
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• 1994

We fabricated a large-scale photovoltaic device for detecting-3-5$\mu$m IR, by forming of n$^{+}$-p junction in the $Hg_{1-x}Cd_{x}$Te (MCT) layer which was grown by LPE on CdTe substrate. The composition x of the MCT epitaxial layer was 0.295 and the hole concentration was 1.3${\times}10^{13}/cm^{4}$. The n$^{+}$-p junction was formed by B+ implantation at 100 keV with a does 3${\times}10^{11}/cm^{2}. The n$^{+}$ region has a circular shape with 2.68mm diameter. The vacuum-evaporated ZnS with resistivity of 2${\times}10^{4}{\Omega}$cm is used as an insulating layer over the epitaxial layer. ZnS plays the role of the anti-reflection coating transmitting more than 90% of 3~5$\mu$m IR. For ohmic contacts, gole was used for p-MCT and indium was used for n$^{+}$-MCT. The fabrication took 5 photolithographic masks and all the processing temperatures of the MCT wafer were below 90$^{\circ}C$. The R,A of the fabricated devices was 7500${\Omega}cm^{2}$. The carrier lifetime of the devices was estimated 2.5ns. The junction was linearly-graded and the concentration slope was measured to be 1.7${\times}10^{17}/{\mu}m$. the normalized detectivity in 3~5$\mu$m IR was 1${\times}10^{11}cmHz^{12}$/W, which is sufficient for real application.

• 한국산학기술학회논문지
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• 제9권6호
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• pp.1599-1606
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• 2008

태양광발전과 같이 자연에너지를 이용한 분산전원은 일정한 출력을 내는 기존의 전원보다 기후나 온도, 지형적인 영향을 많이 받는 간헐적인 전원이므로, 이들이 도입된 배전계통은 기존의 단 방향 공급형태의 배전계통과는 달리 부하와 전원이 혼재되어 운용되는 형태로 된다. 분산전원이 연계된 배전계통의 경우에는 분산전원의 출력용량의 여부에 따라 양방향의 전력조류가 발생할 가능성이 있어, 계통운용상 여러 가지의 문제점이 야기될 수 있다. 특히, 태양광발전이 배전선로에 연계되어 운전되는 경우, 동일 뱅크의 타 배전선로에서 사고가 발생하면 태양광발전이 연계된 건전한 배전선로의 보호협조기기(리클로져)가 오동작하는 사고가 발생하는 경우가 실 계통에서 빈번하게 발생하고 있다. 이에 의하여 건전한 선로의 부하가 정전을 경험하는 심각한 문제점이 발생한다. 따라서 본 논문에서는 이론적인 계산식인 대칭좌표법과 MATLAB/SIMULINK을 이용하여 모델링과 시뮬레이션을 수행하여, 상기의 보호기기의 오동작 메카니즘과 문제점을 분석하고, 이에 대한 개선 방안을 제시하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1520-1521
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• 2008

There are several ways to demonstrate white organic light emitting diodes (OLEDs) for displays and solid state lighting applications. Among these approaches are the stacked three primary or two complementary colors light-emitting layers, multiple-doped emissive layer, and excimer and exciplex emission [1-10]. We report on white phosphorescent excimer devices by using two light emitting materials based on platinum complexes. These devices showed a peak EQE of 15.7%, with an EQE of 14.5% (17 lm/W) at $500\;cd/m^2$, and a noticeable improvement in both the CIE coordinates (0.381, 0.401) and CRI (81). Devices with the structure ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 12% FPt (10 nm) /26 mCPy: 2% Pt-4 (15 nm)/BCP (40 nm)/CsF/Al [device 1], ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 2% Pt-4 (15 nm)/26 mCPy: 12% FPt (10 nm)/BCP (40 nm)/CsF/Al [device 2], and ITO/PEDOT:PSS/TCTA (30 nm)/26 mCPy: 2% Pt-4: 12% FPt (25 nm)/BCP (40 nm)/CsF/Al [device 3] were fabricated. In these cases, the emissive layer was either the double-layer of 26 mCPy:12% FPt and 15 nm 26 mCPy: 2% Pt-4, or the single layer of 26mCPy with simultaneous doping of Pt-4 and FPt. Device characterization indicates that the CIE coordinates/CRI of device 2 were (0.341, 0.394)/75, (0.295, 0.365)/70 at 5 V and 7 V, respectively. Significant change in EL spectra with the drive voltage was observed for device 2 indicating a shift in the carrier recombination zone, while relatively stable EL spectra was observed for device 1. This indicates a better charge trapping in Pt-4 doped layers [10]. On the other hand, device 3 having a single light-emitting layer (doped simultaneously) emitted a board spectrum combining emission from the Pt-4 monomer and FPt excimer. Moreover, excellent color stability independent of the drive voltage was observed in this case. The CIE coordinates/CRI at 4 V ($40\;cd/m^2$) and 7 V ($7100\;cd/m^2$) were (0.441, 0.421)/83 and (0.440, 0.427)/81, respectively. A balance in the EL spectra can be further obtained by lowering the doping ratio of FPt. In this regard, devices with FPt concentration of 8% (denoted as device 4) were fabricated and characterized. A shift in the CIE coordinates of device 4 from (0.441, 0.421) to (0.382, 0.401) was observed due to an increase in the emission intensity ratio of Pt-4 monomer to FPt excimer. It is worth noting that the CRI values remained above 80 for such device structure. Moreover, a noticeable stability in the EL spectra with respect to changing bias voltage was measured indicating a uniform region for exciton formation. A summary of device characteristics for all cases discussed above is shown in table 1. The forward light output in each case is approximately $500\;cd/m^2$. Other parameters listed are driving voltage (Bias), current density (J), external quantum efficiency (EQE), power efficiency (P.E.), luminous efficiency (cd/A), and CIE coordinates. To conclude, a highly efficient white phosphorescent excimer-based OLEDs made with two light-emitting platinum complexes and having a simple structure showed improved EL characteristics and color properties. The EQE of these devices at $500\;cd/m^2$ is 14.5% with a corresponding power efficiency of 17 lm/W, CIE coordinates of (0.382, 0.401), and CRI of 81.