• Transactions on Electrical and Electronic Materials
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• 제16권3호
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• pp.124-129
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• 2015

Organic electronics are the domain in which the components and circuits are made of organic materials. This new electronics help to realize electronic and optoelectronic devices on flexible substrates. In recent years, organic materials have replaced conventional semiconductors in many electronic components such as, organic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs) and organic photovoltaic (OPVs). It is well known that organic light emitting diodes (OLEDs) have many advantages in comparison with inorganic light-emitting diodes LEDs. These advantages include the low price of manufacturing, large area of electroluminescent display, uniform emission and lower the requirement for power. The aim of this paper is to model polymer LEDs and OLEDs made with small molecules for studying the electrical and optical characteristics. The purpose of this modeling process is, to obtain information about the running of OLEDs, as well as, the injection and charge transport mechanisms. The first simulation structure used in this paper is a mono layer device; typically consisting of the poly (2-methoxy-5(2'-ethyl) hexoxy-phenylenevinylene) (MEH-PPV) polymer sandwiched between an anode with a high work function, usually an indium tin oxide (ITO) substrate, and a cathode with a relatively low work function, such as Al. Electrons will then be injected from the cathode and recombine with electron holes injected from the anode, emitting light. In the second structure, we replaced MEH-PPV by tris (8-hydroxyquinolinato) aluminum (Alq₃). This simulation uses, the Poole-Frenkel -like mobility model and the Langevin bimolecular recombination model as the transport and recombination mechanism. These models are enabled in ATLAS- SILVACO. To optimize OLED performance, we propose to change some parameters in this device, such as doping concentration, thickness and electrode materials.

• 전기전자학회논문지
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• 제21권1호
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• pp.1-6
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• 2017

본 논문에서는 플래너 게이트 및 트렌치 게이트의 구조를 동시에 가지고 있는 1200V급 이중 게이트 IGBT 소자를 제안함과 동시에 전기적인 특성을 분석하였으며, 분석된 결과를 가지고 플래너 게이트 및 트렌치 게이트 IGBT 소자의 전기적인 특성과 비교 분석하였다. 이중 게이트 IGBT 소자를 설계하는데 있어 문턱전압 및 온 상태 전압 강하에 영향을 주는 P-베이스 영역에 있어 P-베이스에 깊이는 트렌치 게이트 소자 영역에 영향을 주며, P-베이스에 너비는 플래너 게이트 소자 영역에 영향을 주는 것을 확인할 수 있었다. 본 연구에서 제시한 이중 게이트 IGBT 소자의 전기적인 특성인 항복전압은 1467.04V, 온 전압 강하는 3.08V, 문턱전압은 4.14V의 특성을 나타내고 있다.

• 한국태양에너지학회 논문집
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• 제39권6호
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• pp.83-91
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• 2019

Photovoltaic thermal (PVT) collectors are devices that simultaneously produce electricity and heat. Research on conventional air-type PVT collector focuses on installing baffles to enhance the collector's thermal performance. However, the baffles have pressure drop inside the collector which degrades the thermal performance. Thus, it is necessary to design baffles to smoothen the flow inside the air-type PVT collector. Alternatively, installing perforated baffles in air-type PVT collectors can reduce the collector weight, but parameters such as the diameter of the perforated holes and the height of the perforated plates should be considered. Therefore, the main aim of this study was to analyze thermal characteristics of each variable of perforated baffles installed inside air-type PVT collector. For this purpose, the uniformity of air flow in the collector was compared through NX program, and the resultant heat gain and thermal efficiency of the air-type PVT collector were compared and analyzed. Therefore, the main aim of this study was to analyze thermal characteristics of each variable (Baffle angle, length, height, pitch, perforated ratio) of perforated baffles installed inside air-type PVT collector. For this purpose, the uniformity of air flow in the collector was compared through CFD program, and the resultant heat gain and thermal efficiency of the air-type PVT collector were compared and analyzed. As a result, the maximum outlet temperature was increased by 1.45 times and the heat gain was increased by 193.8 Wth, depending on the perforated baffle plate, compared to the collector without the baffle. The heat transfer performance showed that the maximum internal velocity was 1.61 times higher and the Reynolds number was 1.06 times higher depending on the parameters of the baffle plate.

• 한국태양에너지학회 논문집
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• 제40권5호
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• pp.23-34
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• 2020

Concentrator photovoltaic (CPV) system consists of high-quality complex optical elements, mechanical devices, and electronics components and can have the advantages of high integration and high-efficiency energy sources. III-V compound semiconductor cells have proven performance based on high reliability in the aerospace field, but have characteristics that require absolute support of the balance of systems (BOS) such as solar position trackers, receivers with heat sinks, and housing instruments. To determine the optimum parameters of secondary optical elements (SOEs) design for CPV systems, we designed three types of CPV modules, classified as non-SOEs type, reflective mirror type, and CPC lens type. We measured the I-V and P-V characteristics of the prototype CPV modules with the angle of inclination varying from 0° to 12° and with a 500-magnification Fresnel lens. The experimental results assumed misalignment of the solar position tracker or module design of pinpoint accuracy. As a result, at the 0° tilt angle, the CPC lens produced lower power due to the quartz transmittance ratio compared to that by other SOEs. However, for tilt angles greater than 3°, the CPC lens type module achieved high efficiency and stability. This study is expected to help design high-performance CPV systems.

• 한국전기전자재료학회논문지
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• 제16권2호
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• pp.102-107
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• 2003

This study puts focus on the optimization of growth temperature of CIGS absorber layer which affects severely the performance of solar cells. The CIGS absorber layers were prepared by three-stage co-evaporation of metal elements in the order of In-Ga-Se. The effect of the growth temperature of 1st stage was found not to be so important, and 350$^{\circ}C$ to be the lowest optimum temperature. In the case of growth temperature at 2nd/3rd stage, the optimum temperature was revealed to be 550$^{\circ}C$. The XRD results of CIGS films showed a strong (112) preferred orientation and the Raman spectra of CIGS films showed only the Al mode peak at 173cm$\^$-1/. Scanning electron microscopy results revealed very small grains at 2nd/3rd stage growth temperature of 480$^{\circ}C$. At higher temperatures, the grain size increased together with a reduction in the number of the voids. The optimization of experimental parameters above mentioned, through the repeated fabrication and characterization of unit layers and devices, led to the highest conversion efficiency of 15.4% from CIGS-based thin film solar cell with a structure of Al/ZnO/CdS/CIGS/Mo/glass.

• Journal of Electrical Engineering and Technology
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• 제13권1호
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• pp.114-123
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• 2018

Recently, as one of the countermeasures to reduce carbon dioxide($CO_2$) for global warming problems, operation methods in micro-grid systems replacing diesel generator with renewable energy sources including wind power(WP) and photovoltaic(PV) system have been studied and presented in energetic manners. However, it is reported that some operation problems in micro-grid systems without diesel generator for carbon-free island are being occurred when large scaled WP systems are at start-up. To overcome these problems, this paper proposes an operation strategy in micro-grid systems by adapting control devices such as CVCF(constant voltage constant frequency) ESS(energy storage system) for constant frequency and voltage regulation, load control ESS for balancing demand and supply and SVC(static-var compensator) for reactive power compensation. From the simulation results based on the various operation scenarios, it is confirmed that the proposed operation strategy in micro-grid systems without diesel generators is a useful tool to perform a stable operation in micro-grid systems without diesel generator and also make a contribution to reduce carbon dioxide in micro-grid systems.

• Journal of Electrical Engineering and Technology
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• 제9권2호
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• pp.686-694
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• 2014

A power semiconductor device, usually used as a switch or rectifier, is very significant in the modern power industry. The power semiconductor, in terms of its physical properties, requires a high breakdown voltage to turn off, a low on-state resistance to reduce static loss, and a fast switching speed to reduce dynamic loss. Among those parameters, the breakdown voltage and on-state resistance rely on the doping concentration of the drift region in the power semiconductor, this effect can be more important for a higher voltage device. Although the low doping concentration in the drift region increases the breakdown voltage, the on-state resistance that is increased along with it makes the static loss characteristic deteriorate. On the other hand, although the high doping concentration in the drift region reduces on-state resistance, the breakdown voltage is decreased, which limits the scope of its applications. This addresses the fact that breakdown voltage and on-state resistance are in a trade-off relationship with a parameter of the doping concentration in the drift region. Such a trade-off relationship is a hindrance to the development of power semiconductor devices that have idealistic characteristics. In this study, a novel structure is proposed for the Insulated Gate Bipolar Transistor (IGBT) device that uses conductivity modulation, which makes it possible to increase the breakdown voltage without changing the on-state resistance through use of a P-floating layer. More specifically in the proposed IGBT structure, a P-floating layer was inserted into the drift region, which results in an alleviation of the trade-off relationship between the on-state resistance and the breakdown voltage. The increase of breakdown voltage in the proposed IGBT structure has been analyzed both theoretically and through simulations, and it is verified through measurement of actual samples.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.124-124
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• 2010

Much interest has been focused on InGaN-based materials and their quantum structures due to their optoelectronics applications such as light emitting diode (LED) and photovoltaic devices, because of its high thermal conductivity, high optical efficiency, and direct wide band gap, in spite of their high density of threading dislocations. Build-in internal field-induced quantum-confined Stark effect in InGaN/GaN quantum well LED structures results in a spatial separation of electrons and holes, which leads to a reduction of radiative recombination rate. Therefore, many growth techniques have been developed by utilizing lateral over-growth mode or by inserting additional layers such as patterned layer and superlattices for reducing threading dislocations and internal fields. In this work, we investigated various characteristics of InGaN multiple quantum wells (MQWs) LED structures grown on selectively wet-etched porous (SWEP) GaN template layer and compared with those grown on non-porous GaN template layer over c-plane sapphire substrates. From the surface morphology measured by atomic force microscope, high resolution X-ray diffraction analysis, low temperature photoluminescence (PL) and PL excitation measurements, good structural and optical properties were observed on both LED structures. However, InGaN MQWs LED structures grown on SWEP GaN template layer show relatively low In composition, thin well width, and blue shift of PL spectra on MQW emission. These results were explained by rough surface of template layer, reduction of residual compressive stress, and less piezoelectric field on MQWs by utilizing SWEP GaN template layer. Better electrical properties were also observed for InGaN MQWs on SWEP GaN template layer, specially at reverse operating condition for I-V measurements.

• International journal of advanced smart convergence
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• 제11권3호
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• pp.187-196
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• 2022

In this paper, we propose an example of designing and constructing a roof-type solar power plant structure equipped with a Pseudo-BIPV (Building-Integrated Photovoltaic) shape suitable for use as a roof of a small warehouse with a sandwich-type panel structure. As the characteristics of the roof-type solar power generation facility to be installed in the small warehouse proposed in this study, the shape of the roof is not a general A type, but a right-angled triangle shape with the slope is designed to face south. We chose a structure in which an inverter for one power plant and a control facility are linked by grouping several roofs of buildings. In addition, the height of the roof structure is less than 20 cm from the floor, and it has a shape similar to that of the BIPV, so it is building-friendly because it is almost in close contact with the roof. At the same time, the roof creates a reflective light source due to the white color. By linking this roof with a double-sided solar panel, we designed it to obtain both the advantage of the roof-friendliness and the advantage of efficiency improvement for the electric power generation based on the double-sided panel. Compared to the existing solar power generation facilities using A-shaped cross-sectional modules, the power generation efficiency of roofs in this case is increased by more than 11%, which we can confirm, through the comparison analysis of monitoring data between power plants in the same area. Therefore, if the roof-type solar structure suitable for the small warehouse we have presented in this paper is used, the facilities of electric power generation is eco-friendly. Further it is easier to obtain facility certification compared to the BIPV, and improved capacity of the power generation can be secured at low material cost. It is believed that the roof-type solar power generation facility we proposed can be usefully used for warehouse or factory-based smart housing. Sensor devices for monitoring, CCTV monitoring, or safety and environment management, operating in connection with the solar power generation facilities, are linked with the Internet of Things (IoT) solution, so they can be monitored and controlled remotely.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.341-341
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• 2016

The discovery of light emission in nanostructured silicon has opened up new avenues of research in nano-silicon based devices. One such pathway is the application of silicon quantum dots in advanced photovoltaic and light emitting devices. Recently, there is increasing interest on the silicon quantum dots (c-Si QDs) films embedded in amorphous hydrogenated silicon-nitride dielectric matrix (a-SiNx: H), which are familiar as c-Si/a-SiNx:H QDs thin films. However, due to the limitation of the requirement of a very high deposition temperature along with post annealing and a low growth rate, extensive research are being undertaken to elevate these issues, for the point of view of applications, using plasma assisted deposition methods by using different plasma concepts. This work addresses about rapid growth and single step development of c-Si/a-SiNx:H QDs thin films deposited by RF (13.56 MHz) and ultra-high frequency (UHF ~ 320 MHz) low-pressure plasma processing of a mixture of silane (SiH4) and ammonia (NH3) gases diluted in hydrogen (H2) at a low growth temperature ($230^{\circ}C$). In the films the c-Si QDs of varying size, with an overall crystallinity of 60-80 %, are embedded in an a-SiNx: H matrix. The important result includes the formation of the tunable QD size of ~ 5-20 nm, having a thermodynamically favorable <220> crystallographic orientation, along with distinct signatures of the growth of ${\alpha}$-Si3N4 and ${\beta}$-Si3N4 components. Also, the roles of different plasma characteristics on the film properties are investigated using various plasma diagnostics and film analysis tools.