• Journal of Sensor Science and Technology
• /
• v.5 no.1
• /
• pp.15-22
• /
• 1996

FET type $Ca^{2+}$ sensor(Ca-ISFET) was fabricated by micropool and photolithographic method utilizing photosensitive polymer as membrane materials. When OMR-83 negative photoresist was used as membrane material, it gave good sensitivity by micropool method with dioctyladipate as plasticizer but it could not be used in the photolithographic method. When poly(viny1 butyral), PVB was used as membrane material, it gave relatively high sensitivity ($23{\pm}0.2\;mV/decade$) for $Ca^{2+}$ concentration range of $10^{-4}{\sim}10^{-1}\;mole/{\ell}$ by photolithographic method. PVB also provided good adhesion to the pH-ISFET base device without adhesion promoter pretreatment and any plasticizer.

• Journal of the Microelectronics and Packaging Society
• /
• v.7 no.3
• /
• pp.31-36
• /
• 2000

We developed embedded inductors in MCM-D substrate for RF applications. The increasing demand for high density packaging was the driving forces to the development of MCM-D technology. Most of these development efforts have been focused on high performance digital circuits. However, recently there is a great need fur mixed mode circuits with a combination of digital, analog and microwave devices. Mixed mode modules often have a large number of passive components that are connected to a small number of active devices. Integration of passive components into the high density MCM substrate becomes desirable to further reduce cost, size, and weight of electronic systems while improving their performance and reliability. The proposed MCM-D substrate was based on Cu/photosensitive BCB multilayer and Ti/Cu is used to form the interconnect layer. Seed metal was formed with 1000 $\AA$ Ti/3000 $\AA$ Cu by sputtering method and main metal was formed with 3 $\mu\textrm{m}$ Cu by electrical plating method. The multi-turn sprial inductors were designed in coplanar fashion. This paper describe the manufacturing process of integrated inductors in MCM-D substrate and the results of electrical performance test.

• Korean Journal of Materials Research
• /
• v.20 no.10
• /
• pp.513-517
• /
• 2010

There have been many efforts to modify and improve the properties of functional thin films by hybridization with nano-sized materials. For the fabrication of electronic circuits, micro-patterning is a commonly used process. For photochemical metal-organic deposition, photoresist and dry etching are not necessary for microscale patterning. We obtained direct-patternable $SnO_2$ thin films using a photosensitive solution containing Ag nanoparticles and/or multi-wall carbon nanotubes (MWNTs). The optical transmittance of direct-patternable $SnO_2$ thin films decreased with introduction of nanomaterials due to optical absorption and optical scattering by Ag nanoparticles and MWNTs, respectively. The crystallinity of the $SnO_2$ thin films was not much affected by an incorporation of Ag nanoparticles and MWNTs. In the case of mixed incorporation with Ag nanoparticles and MWNTs, the sheet resistance of $SnO_2$ thin films decreased relative to incorporation of either single component. Valence band spectral analyses of the nano-hybridized $SnO_2$ thin films showed a relation between band structural change and electrical resistance. Direct-patterning of $SnO_2$ hybrid films with a line-width of 30 ${\mu}m$ was successfully performed without photoresist or dry etching. These results suggest that a micro-patterned system can be simply fabricated, and the electrical properties of $SnO_2$ films can be improved by incorporating Ag nanoparticles and MWNTs.

• Polymer(Korea)
• /
• v.31 no.5
• /
• pp.393-398
• /
• 2007

We studied the mechanism of liquid crystal alignment on polyvinylfluorocinnamate (PVCN-F) films which were irradiated by UV using polarized fourier transform infrared (FT-IR) spectroscopy and ultraviolet/visible (UV/Vis) spectroscopy. UV irradiation of PVCN-F films caused decrease of vinylene -C=C- stretching peak area at $1638cm^{-1}$ and shift of conjugated C:0 stretching vibration at $1712cm^{-1}\;to\;1734cm^{-1}$ which is caused by nonconjugated C=O stretching nitration. To study the orientation direction of 5CB liquid crystal (LC) molecules in the liquid crystal cell with PUV irradiation, rubbing treatment or without any treatment on the PVCN-F alignment layer, we used polarized FT-IR dichroism technique. We successfully measured 5CB LC alignment directions, which are perpendicular to the irradiated PUV polarization direction and parallel to the rubbing direction in the liquid crystal cell without using dichroic dyes.

• Polymer(Korea)
• /
• v.31 no.5
• /
• pp.374-378
• /
• 2007

Water-soluble terpolymer of acrylamide, diacetone acrylamide, and acrylic acid was prepared by redox initiators in aqueous medium. One component photoresist was synthesized by reaction of terpolymer with 4-azidoaniline. By blending the aqueous acrylamide/diacetone acrylamide copolymer solution with bisazide, 4,4'-diazidostilbene -2,2'-disulfuric acid sodium salt, two component photoresist was prepared. The photosensitivity per azido group unit mole of one component photoresist was 4 times higher than that of two component photoresist. The dot-type pattern was successfully achieved with one component photoresist at low exposure energy, which is prospective to be used as black matrix negative photoresist.

• Polymer(Korea)
• /
• v.35 no.1
• /
• pp.87-93
• /
• 2011

We developed a fluorene-containing multifunctional binder polymer for LCD color filter resist, and employing the binder polymer, carbon black based black photoresist (CBR) was prepared in order to apply it to the black matrix (BM). To obtain the multifunction of the binder polymer, we synthesized bisphenol fluorene epoxy acrylate-containing unsaturated polyester and identified the binder polymer structure with $^1H$ NMR, GPC and FTIR. The corresponding BFEA-polyester binder polymer was compared with the commercially available acryl binder toward the application to the CBR. From the BM lithography test, we found that the synthesized BFEA-polyester binder had better photocrosslinking capability and alkali solubility. In addition, the newly developed binder gave a good process margin, good resolution and adhesion property on a glass substrate.

• Journal of the Korean Society for Precision Engineering
• /
• v.31 no.6
• /
• pp.483-489
• /
• 2014

In this study, experiments were conducted for micro pattern printing to combine solution atomization process and stencil printing based on electrospray deposition. The stencil mask fabricated by etching the photosensitive glass placed below 0.3 mm distance to substrate has 100 um line width. The process parameters of electrospray deposition system for the atomization of the solution are applied voltage and supply flow rate of the solution. Meniscus angle of cone-jet was optimized by varying the supply flow rate from 0.3 ml/hr to 0.7 ml/hr. Voltage condition was verified having symmetric cone-jet angle and no pulsation at 8.5 kV applied voltage. In addition, a number of micro patterns are printed using a single 1 step process by solution atomization process. Variable line width of approximate 100 um was confirmed by changing conditions of solution atomization regardless of the pattern size of stencil mask.

• Journal of the Korean Chemical Society
• /
• v.38 no.9
• /
• pp.632-639
• /
• 1994

For dye sensitization of zinc oxide in the visible region, copper phthalocyanine(CuPc) and sunfast yellow(SY) were adsorbed in two layers on zinc oxide powder. The adsorption structures of $\alpha-and\beta-CuPc$ on zinc oxide were investigated by photoacoustic, IR and Raman spectra. The ${\alpha}-and\;{\beta}$-polymorphs exhibited dimeric structure or molecular aggregates. The surface photovoltaic effect of ZnO/CuPc/SY showed higher than that of ZnO/SY/CuPc and $ZnO/\beta-CuPc/SY$ indicated better photosensitive than $ZnO/\alpha-CuPc/SY.$ Electrophotographic sensitivity of $ZnO/\beta-CuPc/SY$ was $$S_{1/2}=2.99{\times}10^{-2}(erg/cm^2)^{-1}$ at 630 nm.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.658-658
• /
• 2013

Graphene is an attractive material for various device applications due to great electrical properties and chemical properties. However, lack of band gap is significant hurdle of graphene for future electrical device applications. In the past few years, several methods have been attempted to open and tune a band gap of graphene. For example, researchers try to fabricate graphene nanoribbon (GNR) using various templates or unzip the carbon nanotubes itself. However, these methods generate small driving currents or transconductances because of the large amount of scattering source at edge of GNRs. At 2009, Bai et al. introduced graphene nanomesh (GNM) structures which can open the band gap of large area graphene at room temperature with high current. However, this method is complex and only small area is possible. For practical applications, it needs more simple and large scale process. Herein, we introduce a photosensitive graphene device fabrication using CdSe QD coated nano-porous graphene (NPG). In our experiment, NPG was fabricated by thin film anodic aluminum oxide (AAO) film as an etching mask. First of all, we transfer the AAO on the graphene. And then, we etch the graphene using O2 reactive ion etching (RIE). Finally, we fabricate graphene device thorough photolithography process. We can control the length of NPG neckwidth from AAO pore widening time and RIE etching time. And we can increase size of NPG as large as 2 $cm^2$. Thin CdSe QD layer was deposited by spin coatingprocess. We carried out NPG structure by using field emission scanning electron microscopy (FE-SEM). And device measurements were done by Keithley 4200 SCS with 532 nm laser beam (5 mW) irradiation.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.12
• /
• pp.83-91
• /
• 1998

Fiber Bragg grating which has a blazed ang1e to the plane of incident wave generates a side-mode as well as main-mode. The side-mode has an identical characteristics with a long period grating that couples with a cladding mode, so rejects the special wavelength. We experimented on the side-mode characteristics with two fibers which Ge doped depressed index fiber and very high photosensitive H$_2$ loaded step index fiber according to the tilted angle. Also, using a phase mask equipped with rotation plate which has 0.02$^{\circ}$ resolution, we can control the bandwidth and the peak value of a total loss spectrum by aligned tilted grating in a fiber and using this, tried to compose the ASE band rejection filter of the Erbium doped fiber amplifier.