• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.237-238
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• 2008

Electrical properties of Pd/Zn/Pd/Au contacts to p-InP were investigated as function of the V/III ratio of p-InP. P-type InP was made by the Zn diffusion into InP and activation process with rapid thermal annealing (RTA) measurement. After activation, the hole concentration was two orders of magnitude higher than that of the sample having only diffusion process. According to transmission line method (TLM) results, the specific contact resistance of p-InP was lower as used InP having the lower V/III ratio. The experimental results represent that the diffusion of Zn in undoped InP deeply related to the equilibrium between interstitials and substitutional Zn is established via indium interstitials.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.400-401
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• 2009

In this paper we report a micro projector including of RGB sources, a $3{\times}1$ Fiber Optic Color Synthesizer (FOCS), and a two dimensional micro mechanical scanning mirror. We further report a modifier micro collimator which can enhance the resolution of the screened image.

• Proceedings of the Optical Society of Korea Conference
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• 2009.02a
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• pp.385-386
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• 2009

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.231-231
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• 2006

We fabricated a polymer sub-microstructure for optical device application by two-photon-induced laser lithography technique. Polymer pattern could be minimized as small as ${\sim}100\;nm$. The photopolymerization resin contains laser-dye, thus promising a high level of the optical gain. We utilized the lithography technique to the photonic crystal application, where the template of the two-dimensional photonic crystal was modified by polymer gain medium as defect-shape and line-shape orientations. Photonic band gap effect from polymer-doped photonic crystals is expected to exploit the application such as organic solid-state laser device.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.105-108
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• 2007

Chiral liquid crystals exhibit band-gap structures responsive to electrical and optical fields, providing wide-ranging opportunities for photonics applications. We discuss three aspects of this technology: optics of chiral nematic devices and removal of pitch jumps; optical switching of chiral nematic materials; and using novel phases in photonic devices.

• ETRI Journal
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• v.25 no.3
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• pp.149-155
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• 2003

A self-pulsating multisection distributed-feedback laser diode (DFB LD) can potentially realize all-optical clock extraction. This device generally consists of three sections, two DFB sections and one waveguide section. The most important variable in this device is detuning, which is the relative spectral position between the stop bands of two DFB sections. We fabricated a novel structure in which two gratings were located one over and one under the active layers. Each grating structure was independently defined in processing so that detuning, which is the prerequisite for self-pulsation, could be easily controlled. Observing various self-pulsating phenomena in these devices under several detuning conditions, we characterized the phenomena as dispersive Q-switching, mode beating, and self-mode-locking.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.971-974
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• 2005

In this paper, we describe photonic sensor interface in SOPC(System on a programmable chip) platform. This platform uses device that has ARM922T processor and APEX FPGA area on a chip. We use two development kits. The one is embedded kit that using Intel's Xscale device, the another is SOPC kit that using Altera's Excalibur device. We implement some device logic that DMAC, ADCC, etc. and application.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.11a
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• pp.65-66
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• 2010

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.887-890
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• 2008

We present 2D slab silicon-based photonic crystal optical insulator to enhance light emission efficiency of light-emitting diode (LED). A 2D slab silicon photonic crystal is designed in such a way that light emitting diode die can be placed in the middle of the silicon photonic crystal. The device creates light propagation forbidden region in horizontal plane for Transverse Electric (TE) light with the wavelength range of 450 nm to 600 nm.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.408-410
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• 2009

First demonstrators of bi-directional OLED microdisplay devices have been developed and integrated into see-through HMD optics. The device combines 'display' and 'imaging' by nested OLED pixels and photodetectors in a single CMOS chip. Major aim of this integration is to provide capabilities for eyetracking to achieve gaze-based human-displayinteraction.