• Proceedings of the Optical Society of Korea Conference
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• 2004.07a
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• pp.154-155
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• 2004

• Proceedings of the Optical Society of Korea Conference
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• 2004.02a
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• pp.368-369
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• 2004

Birefringence due to structural irregularities in photonic crystal fiber is numerically analyzed. The statistical correlations between the birefringence and the degree of the irregularities are presented, and their behaviors are explained using a perturbation theory.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.580-583
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• 2008

In this paper, we investigated the properties of chalcogenide glass thin films formed by photo-inducing for use in 1-dimensional photonic crystals. We used Ag-doped amorphous As-Ge-Se-S thin films which belongs in the chalcogenide materials having sensitive photoluminescence properties. The purpose of this experiment is to form the holographic lattice for 1-dimensional photonic crystals. The way in which photo-induce into the amorphous chalcogenide thin films is holographic lithography method. We confirmed the formation of diffraction lattice by sensing the existence of diffraction beam and measured the diffraction efficiency. The results suggest that there is an application possibility with photonic crystals.

• Journal of the Semiconductor & Display Technology
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• v.5 no.2 s.15
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• pp.1-5
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• 2006

The GaN thin film on the 8 periods InGaN/GaN multi-quantum well structure was grown on the sapphire substrate using metal-organic chemical vapor deposition. The nano-scaled triangular-lattice holes with the diameter of 150 nm were patterned on a polymethylmethacrylate blocking film using an electron beam nano-lithography system. The thin slab and two-dimensional photonic crystals with the thickness of 28 nm were fabricated on the GaN layer for the blue light diffraction sources. The photonic crystal with the lattice parameter of 460 nm enhances spectral intensity of photoluminescence indicating that the photonic crystals provides the source of nano-diffraction for the blue light of the 450-nm wavelength.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.42-42
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• 2010

Deep-trenched photonic crystals passing through InGaN/GaN quantum well structural layer have been fabricated on the surface of GaN-based light emitting diode(LED) using by electron beam nanolithography. The lattice constant and hole diameter of the photonic crystals are 230nm and 140nm, respectively. The structural and electro-optical properties have been investigated by scanning electron microscope(SEM) and power-current-voltage(L-I-V). Electroluminescence from GaN-based LED with deep-trenched photonic crystal shows the higher intensity than that without photonic crystal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.52-54
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• 2008

The authors investigated the InGaN/GaN multi-quantum well blue light emitting diodes with the implements of the photonic crystals fabricated at the top surface of p-GaN layer or the bottom interface of n-GaN layer. The top photonic crystals result in the lattice-dependent photoluminescence spectra for the blue light emitting diodes, which have a wavelength of 450nm. However, the bottom photonic crystal shows a big shift of the photoluminescence peak from 444 nm to 504 nm and played as a role of quality enhancement for the crystal growth of GaN thin film. The micro-Raman spectroscopy shows the improved epitaxial quality of GaN thin film.

• Journal of Integrative Natural Science
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• v.3 no.2
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• pp.84-88
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• 2010

Photonic crystals containing rugate structures from a single crystalline silicon wafer was obtained by using a sinoidal alternating current during an electrochemical etch procedure. Photonic crystals were isolated from the silicon substrate by applying an electropolishing current and were then made into particles by using an ultrasonic fracture in an ethanol solution to give a smart dust. Smart dusts exhibited their unique nanostructures and optical characteristics. They exhibited sharp photonic band gaps in the optical reflectivity spectrum. The size of smart dust obtained was in the range of 10-20 nm.

• Transactions on Electrical and Electronic Materials
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• v.9 no.4
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• pp.163-168
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• 2008

Photonic crystal structures have been received considerable attention due to their high optical sensitivity. One of the techniques to construct their structure is the dip-pen lithography (DPN) process, which requires a nano-scale resolution and high reliability. In this paper, we propose a two dimensional photonic crystal array to improve the sensitivity of optical biosensor and DPN process to realize it. As a result of DPN patterning test, we have observed that the diffusion coefficient of the mercaptohexadecanoic acid (MHA) molecule ink in octanol is much larger than that in acetonitrile. In addition, we have designed and fabricated optical waveguides based on the mach-zehnder interferometer (MZI) for application to biosensors. The waveguides were optimized at a wavelength of 1550 nm and fabricated according to the design rule of 0.45 delta%, which is the difference of refractive index between the core and clad. The MZI optical waveguides were measured of the optical characteristics for the application of biosensor.

• Journal of the Korean Society for Precision Engineering
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• v.24 no.4 s.193
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• pp.153-158
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• 2007

Recently nano imprint lithography to fabricate photonic crystal on polymer is preferred because of its simplicity and short process time and ease of precise manufacturing. But, the technique requires the precise mold as an imprinting tool for good replication. These molds are made of the silicon, nickel and quartz. But this is not desirable due to complex fabrication process, high cost. So, we describe a simple, precise and low cost method of fabricating PDMS stamp to make the photonic crystals. In order to fabricate the PDMS mold, we make the original pattern with designed hole array by finding the optimal electron beam writing condition. And then, we have tried to fabricate PDMS mold by the replica molding with ultrasonic vibration and pressure system. We have used the cleaning process to solve the detaching problem on the interface. Using these methods, we acquired the PDMS mold for photonic crystals with characteristics of a good replication. And the accuracy of replication shows below 1% in 440nm at diameter and in 610nm at lattice constant by dimensional analysis by SEM and AFM.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.4
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• pp.821-828
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• 2012

In this paper, we report that the differences between RF power levels can be improved in wavelength division multiplexing - radio over fiber (WDM-RoF) system by using a photonic crystal fiber. In a WDM-RoF system, each WDM channel experiences different received RF power level fluctuation in remote node (RN) because of wavelength-dependent dispersion. Since each WDM channel experiences different power fluctuation, the RF power fluctuation acts as a design constraint in viewpoint of network design. We designed a photonic crystal fiber to improve the effect of wavelength- dependent dispersion on RF power fluctuation. Also, we analyzed the wavelength-dependent difference of inter-channel RF power fluctuations.