• The Journal of the Korea Contents Association
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• v.16 no.3
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• pp.219-231
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• 2016

$^{99m}Tc$-DMSA planar scan that can analyze the functions of kidney quantitatively provides less information on a lesion than tomography scanning. Therefore, this study applied a high sensitivity all-purpose collimator that is sensitive to photonic signals to $^{99m}Tc$-DMSA and carried out a clinical scan with single photon emission computed tomography (SPECT). And diagnostic accuracy and time requirement of were analyzed to know the clinical usefulness of the applied scanning method. 10 subjects were intravenously injected with radiopharmaceutical product (1.0-1.2 MBq/kg) and scanned by a gamma camera with planar scanner (high resolution (HR)-mode, $256{\times}256$, 50 kcts/view, 4 image) and SPECT (HR / high sensitive (HS)-mode, $128{\times}128$, step and shoot, $180^{\circ}$, variable sec/angle, total 64 frame, OSEM reconstruction), respectively. The collected data was compared with an analysis program. The results showed that HS-mode SPECT detected total counts 1.8-5.6 times more than planar scan. Relative renal function evaluated based on the counts was not significantly different by two scanning methods (p=0.96) and it turned out that test time was shortened by 39% when HS-mode SPECT was used. Therefore, SPECT using HR, HS-mode collimator could analyze renal function more quantitatively than using planar scan and the former could diagnose the location information of a lesion more accurately than the latter as well as shortened test time requirement, which demonstrated the clinical usefulness of $^{99m}Tc$-DMSA renal SPECT using high sensitivity all purpose collimator.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.296-296
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• 2014

We investigate experimentally and theoretically the splitting of surface plasmon (SP) resonance peaks under TE- and TM-polarized illumination. The SP structure at infrared wavelength is fabricated with a 2-dimensional square periodic array of circular holes penetrating through Au (gold) film. In brief, the processing steps to fabricate the SP structure are as follows. (i) A standard optical lithography was performed to produce to a periodic array of photoresist (PR) circular cylinders. (ii) After the PR pattern, e-beam evaporation was used to deposit a 50-nm thick layer of Au. (iii) A lift-off processing with acetone to remove the PR layer, leading to final structure (pitch, $p=2.2{\mu}m$; aperture size, $d=1.1{\mu}m$) as shown in Fig. 1(a). The transmission is measured using a Nicolet Fourier-transform infrared spectroscopy (FTIR) at the incident angle from $0^{\circ}$ to $36^{\circ}$ with a step of $4^{\circ}$ both in TE and TM polarization. Measured first and second order SP resonances at interface between Au and GaAs exhibit the splitting into two branches under TM-polarized light as shown in Fig. 1(b). However, as the incidence angle under TE polarization is increased, the $1^{st}$ order SP resonance peak blue-shifts slightly while the splitting of $2^{nd}$ order SP resonance peak tends to be larger (not shown here). For the purpose of understanding our experimental results qualitatively, SP resonance peak wavelengths can be calculated from momentum matching condition (black circle depicted in Fig. 2(b)), $k_{sp}=k_{\parallel}{\pm}iG_x{\pm}jG_y$, where $k_{sp}$ is the SP wavevector, $k_{\parallel}$ is the in-plane component of incident light wavevector, i and j are SP coupling order, and G is the grating momentum wavevector. Moreover, for better understanding we performed 3D full field electromagnetic simulations of SP structure using a finite integration technique (CST Microwave Studio). Fig. 1(b) shows an excellent agreement between the experimental, calculated and CST-simulated splitting of SP resonance peaks with various incidence angles under TM-polarized illumination (TE results are not shown here). The simulated z-component electric field (Ez) distribution at incident angle, $4^{\circ}$ and $16^{\circ}$ under TM polarization and at the corresponding SP resonance wavelength is shown in Fig. 1(c). The analysis and comparison of theoretical results with experiment indicates a good agreement of the splitting behavior of the surface plasmon resonance modes at oblique incidence both in TE and TM polarization.

• Science of Emotion and Sensibility
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• v.14 no.1
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• pp.165-174
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• 2011

Recent years have witnessed that IT-convergence technology has become the most important issue in the global market. Along with this trend, demand for PSS(i.e., Product-Service Systems) design has been rapidly increased in the smart clothing market. A case of the PSS design research, this study aimed to identify optimum conditions for weaving of POF-based flexible textile display(abbreviated as "PFTD") for mountaineer wear with safe-guard function regarding luminescent properties. Based on the findings regarding the optimum weaving condition of PFTD, several designs of mountaineer wear were suggested in this study. A total of 15 PFTD samples were prepared under various weaving conditions of weave structures and density of POF, and the luminance values of each sample were measured. As the results, the types of PFTD with structures and density of 'satin 3:1', 'satin 2:1', 'twill 3:1' and 'twill 2:1' indicated relatively higher luminescence. And based on the results and recent sports fashion trends, two suited mountaineering wears applying PFTD were illustrated in this study.

• Korean Journal of Optics and Photonics
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• v.30 no.6
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• pp.249-254
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• 2019

An optical current sensor device that measures electric current by the principle of the Faraday effect was designed and fabricated. The polarization-rotated reflection interferometer and the quadrature phase interferometer were introduced so as to improve the operational stability. Complex structures containing diverse optical components were integrated in a polymeric optical integrated circuit and manufactured in a small size. This structure allows sensing operation without extra bias feedback control, and reduces the phase change due to environmental temperature changes and vibration. However, the Verdet constant, which determines the Faraday effect, still exhibits an inherent temperature dependence. In this work, we tried to eliminate the residual temperature dependence of the optical current sensor based on polarization-rotated reflection interferometry. By varying the length of the fiber-optic wave plate, which is one of the optical components of the interferometer, we could compensate for the temperature dependence of the Verdet constant. The proposed optical current sensor exhibited measurement errors maintained within 0.2% over a temperature range, from 25℃ to 85℃.

• Korean Journal of Optics and Photonics
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• v.25 no.1
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• pp.38-43
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• 2014

An external cavity laser supporting two wavelengths is demonstrated by incorporating polymer waveguide Bragg reflectors and a superluminescent light-emitting diode. An oversized rib waveguide structure and Bragg gratings are designed by using the effective-index and transmission-matrix methods. Bragg gratings with different periods are inscribed on a polymer waveguide through double-exposure laser interferometry. In order to tune the cavity loss affected by the reflectivity of Bragg gratings, a Bragg reflectors with varying length is incorporated. Two-wavelength-mode lasing is achieved for the device consisting of 2-mm long, 537-nm period gratings and 2.2-mm long, 540-nm period gratings; the lasing wavelengths are 1554 nm and 1564 nm, with an output power close to 0 dBm, a 20-dB bandwidth of 0.2 nm, and a side-mode suppression ratio of 45 dB.

• Korean Journal of Optics and Photonics
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• v.19 no.1
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• pp.54-59
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• 2008

We report on the measurements of absorption spectra from acetylene ($^{12}C_2H_2$) and hydrogen cyanide ($H^{13}C^{14}N$) for wavelength reference in the C-band (conventional band) region using a supercontinuum optical source generated from a mode-locked $Cr^{4+}$:YAG laser. The center wavelength of the mode-locked $Cr^{4+}$:YAG laser was 1510 nm and the pulse duration was 75 fs at 100 MHz repetition rate. The supercontinuum source achieved a flatness of ${\pm}5dB$ over a wavelength range of more than 400 nm, using a 20 m long photonic crystal fiber. The measured absorption spectra from acetylene ($^{12}C_2H_2$) and hydrogen cyanide ($H^{13}C^{14}N$) had more than 50 lines and were analyzed for wavelength standardization.

• Korean Journal of Optics and Photonics
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• v.16 no.3
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• pp.248-253
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• 2005

We designed and fabricated a compact multi-mode interference (MMI) wavelength demultiplexer using the concept of 'Improved Quasi-State' modes. The output power and extinction ratio were improved by utilizing modal phase error which is specially occurred in low-index contrast. For a designed demultiplexer, the mode propagation analysis with effective index approximation shows significant improvement of extinction ratio to -25 dB for both $1.31{\mu}m\;and\;1.51{\mu}m$ wavelength region and the split-length was reduced about 1/5 of other MMI devices. The fabricated device shows successful characteristics for both 1.31 and $1.55{\mu}m$ wavelengths. These results demonstrate the potential of low-index materials system and the embossing process for photonic integrated circuits.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.241-241
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• 2008

Macrofore formation in silicon and other semiconductors using electrochemical etching processes has been, in the last years, a subject of great attention of both theory and practice. Its first reason of concern is new areas of macropore silicone applications arising from microelectromechanical systems processing (MEMS), membrane techniques, solar cells, sensors, photonic crystals, and new technologies like a silicon-on-nothing (SON) technology. Its formation mechanism with a rich variety of controllable microstructures and their many potential applications have been studied extensively recently. Porous silicon is formed by anodic etching of crystalline silicon in hydrofluoric acid. During the etching process holes are required to enable the dissolution of the silicon anode. For p-type silicon, holes are the majority charge carriers, therefore porous silicon can be formed under the action of a positive bias on the silicon anode. For n-type silicon, holes to dissolve silicon is supplied by illuminating n-type silicon with above-band-gap light which allows sufficient generation of holes. To make a desired three-dimensional nano- or micro-structures, pre-structuring the masked surface in KOH solution to form a periodic array of etch pits before electrochemical etching. Due to enhanced electric field, the holes are efficiently collected at the pore tips for etching. The depletion of holes in the space charge region prevents silicon dissolution at the sidewalls, enabling anisotropic etching for the trenches. This is correct theoretical explanation for n-type Si etching. However, there are a few experimental repors in p-type silicon, while a number of theoretical models have been worked out to explain experimental dependence observed. To perform ordered macrofore formaion for p-type silicon, various kinds of mask patterns to make initial KOH etch pits were used. In order to understand the roles played by the kinds of etching solution in the formation of pillar arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, N-dimethylformamide (DMF), iso-propanol, and mixtures of HF with water on the macrofore structure formation on monocrystalline p-type silicon with a resistivity varying between 10 ~ 0.01 $\Omega$ cm. The etching solution including the iso-propanol produced a best three dimensional pillar structures. The experimental results are discussed on the base of Lehmann's comprehensive model based on SCR width.

• Journal of Adhesion and Interface
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• v.13 no.1
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• pp.31-37
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• 2012

In this study, we investigated the curing properties of UV-LED curable color coating. Specially, the effects of UV-LED wavelength (365, 395, and 405 nm), inert gas, the concentration of photosensitizer, and dual curing on the curing behavior of UV-LED coating systems were studied. The photopolymerization behaviors and the unreacted acrylate groups at Film-air (FA) interface and Film-substrate (FS) interface were investigated by photo differential scanning calorimetry (Photo-DSC) and Fourier-transform infrared spectroscopy with attenuated total reflection (FT-IR/ATR), respectively. Photo-DSC results showed that the heat flow and the ultimate conversion for coating system cured by 405 nm UV-LED were higher than the corresponding values for coating systems cured by 395 and 365 nm UV-LED. FT-IR/ATR results showed that the UV-LED curing systems improved interior and through curing of the coating film, but significantly are affected by oxygen inhibition at FA-interface. The inert environment such as nitrogen purging and the dual curing improved the surface and interior curing of the coating films.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.7
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• pp.2541-2548
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• 2010

This paper describes the calculation for characteristic impedance of transmission line with periodic structures such as defected ground structure (DGS) and photonic bandgap (PBG). The previous method which uses the ${\lambda}$/4 transmission line model is reviewed and its disadvantage that the calculated characteristic impedance is strongly dependent on the frequency is discussed. The characteristic impedance of transmission lines with periodic structures are calculated using the ${\lambda}$/4 transmission line model and analytic method. The calculated characteristic impedance by the latter method is an almost constant value while that from the first method depends on the frequency strongly. In addition, the characteristic impedance of the transmission line with PBG is calculated and proposed, while it has been rarely studied ever. S-parameters are obtained from the measurement using the fabricated sample as well as simulation, and used for calculating the characteristic impedances and comparison. The characteristic impedances calculated from the measured S-parameters agree well with the simulated results. It is well described that the analytic method to calculate the characteristic impedance of transmission lines on uniform dielectric structures can be applied successfully to the transmission lines with periodic structures such as DGS and PBG.