• 한국정밀공학회지
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• 제25권4호
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• pp.53-60
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• 2008

Electron detectors used in scanning electron microscope accept electrons emitted from the specimen and convert them to an electrical signal that, after amplification, is used to modulate the gray-level intensities on a cathode ray tube, producing an image of the specimen. Electron detector is one of the key components dominating the performance of scanning electron microscope so that the development of electron detectors having high performance is indispensable to acquire high quality images using scanning electron microscope. In this paper, we designed and manufactured an electron detector and conducted a couple of image capture experiments using it. In particular, scintillator which generates light photons when it is struck by high-energy electrons was manufactured and experimental studies on the optimization of manufacturing condition was carried out. From experiments to evaluate the performance of our detector, it was verified that the performance of our detector is equivalent to or better than that of the conventional one.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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• pp.484-485
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• 1987

The characteristics of leader development in rod -to- plane air gap (20cm gap length) under positive impulse potentials have been studied by means of 2-photomultiplier technique and image intensifier camera. It was shown that the streamers radiate relatively short wavelength light (${\sim}340nm$) while the leaders radiate a plenty of long wave length light ($400{\sim}800nm$). It was also known that the streamers propagate very fast with a velocity of $6{\times}l0^7cm/sec$ but the leaders have average velocity of $5{\times}10^6cm/sec$ and they proceed gradually fast by step-wise development.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 추계학술대회 논문집 학회본부 C
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• pp.422-424
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• 2000

ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the emission properties of ZnO thin films, PL measurements with an Ar ion laser as a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited PL bands centered around 390, 510 and 640 nm, labeled near ultra-violet (UV), green and orange bands. Structural properties of ZnO thin films are analized with X-ray diffraction (XRD).

• Nuclear Engineering and Technology
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• 제52권11호
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• pp.2572-2580
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• 2020

Emerging gamma ray detection applications that utilize neutron-based interrogation result in the prompt emission of high-energy (>2 MeV) gamma-rays. Rapid imaging is enabled by scintillators that possess high density, high atomic number, and excellent energy resolution. In this paper, we evaluate the bright (50,000 photons/MeV) oxide scintillator, cerium-doped Gd₂Al₂Ga₃O₁₂ (GAGG(Ce)). A silicon photomultiplier (SiPM) array is coupled to a GAGG(Ce) scintillator array (12 × 12 pixels) and integrated into a coded-aperture based gamma-ray imaging system. A resistor-based symmetric charge division circuit was used reduce the multiplicity of the analog outputs from 144 to 4. The developed system exhibits 9.1%, 8.3%, and 8.0% FWHM energy resolutions at 511 keV, 662 keV, and 1173.2 keV, respectively. In addition, a pixel-identification resolution of 602 ㎛ FWHM was obtained from the GAGG(Ce) scintillator array.

• 한국광학회지
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• 제4권4호
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• pp.452-456
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• 1993

자발적매개하향변환과정에서 발생되는 광자쌍을 동시계수하여 광전자증배관의 양자효율을 측정하였다. 표준광원이나 표준광원이나 표준복사계를 필요로하지 않는 이 방법으로 560nm에서 850nm 까지의 파장영역에 대하여 3%의 오차로 양자효율을 측정하였으며, 633 nm에서의 측정치는 교정된 레이저출력계와의 비교에 의하여 얻어진 값과 측정오차 내에서 일치하였다.

• 한국연소학회지
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• 제20권4호
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• pp.1-9
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• 2015

The object of this study is a deriving the relations according to the measuring locations between the chemiluminescence and the flame state at commercial burner. In this study, the flame chemiluminescence of the flame of commercial burner is measured using a photomultiplier tube and the optical band-pass filter. In addition, the contour of the chemiluminescence of the flame is measured using the common CCD camera and the optical band-pass filters, and the acquired images is converted by the simple image processing as a matrix form. The results showed that certain relationship between optical data and equivalence ratio exists, and the contour according to the measuring location of the flame chemiluminescence is different by equivalence ratio.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2005년도 춘계학술대회 논문집
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• pp.9-14
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• 2005

The nature of the signals collected by an SEM(Scanning Electron Microscope) in order to form images are all dependent on the detector used to collect them, and the quality of an acquired image is strongly influenced by detector performance. Therefore, the development of detector with high performance is very important in pulling up the resolution of SEM This study presents the secondary electron detector for use in scanning electron microscope, electric circuit and I/V conversion circuit for driving that detector.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.140-143
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• 1992

This paper deals with the dielectric behaviors of $SF_{6}$ gas and prebreakdown growth caused by lightning impulse voltages in inhomogeneous field perturbed with a fixed needle-shaped protrusion on the electrode. The measuring interpretation of the external current induced by moving charges is described. The temporal growth of prebreakdown is obserbed by using a shunt and photomultiplier. The prebreakdown processes are initiated by the first streamer corona at a needle protrustion, the flashover of the main gap in the positive polarity is very sensitive to the local field and propagates into the gap with the leader mechanism. It is found that the dependence of the prebreakdown phenomena on the polarity of applied voltages is caused by the effect of space charges. In addition, the proposed measuring techniques are very useful to perform the measurements of avalanche currents, corona discharges in inhomogeneous fields ad partial discharges in voids.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.539-542
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• 2000

ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the emission properties of ZnO thin films, PL measurements with an Ar ion laser as a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited PL bands centered around 390, 510 and 640 nm, labeled near ultra-violet (UV), green and orange bands. Structural properties of ZnO thin films are analized with X-ray diffraction (XRD).

• 센서학회지
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• 제24권2호
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• pp.96-100
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• 2015

In the present study, we developed a real-time radiation-monitoring sensor for an underwater radiation-monitoring system and evaluated its effectiveness using reference radiation sources. The monitoring sensor was designed and miniaturized using a silicon photomultiplier (SiPM) and a cerium-doped-gadolinium-aluminum-gallium-garnet (Ce:GAGG) scintillator, and an underwater wireless monitoring system was implemented by employing a remote Bluetooth communication module. An acrylic water tank and reference radiation sources ($^{137}Cs$, $^{90}Sr$) were used to evaluate the effectiveness of the monitoring sensor. The underwater monitoring sensor's detection response and efficiency for gamma rays and beta particles as well as the linearity of the response according to the gammaray intensity were verified through an evaluation. This evaluation is expected to contribute to the development of base technology for an underwater radiation-monitoring system.