• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.76-80
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• 1997

ZnSe single crystals were grown by seeded chemical vapor transport in $H_2$ atmosphere. The influence of the growth parameters on the crystal defect was investigated. The grown ZnSe single crystal was characterized by chemical etching, X-ray rocking curve and photoluminescenc e measurements.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.137-140
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• 2001

To improve structural properties and induce higher conductivity, we have annealed emitting layer, The temperature condition was investigated by various experiment. To observe the surface morphology of emitting layer, measured the AFM and the X-ray diffraction pattern of P3HT film is shown. It is move to slightly low angles and diffraction peaks also become much sharper. After annealing of emitting layer, EL intensity and Voltage-current-luminance curve is better as compared with untreated. But PL intensity was decreased. It is known that by emission principal. After annealing of emitting layer, EL devices enhances the interface adhesion between the emissive polymer and Indium-tin-oxide electrode, which takes a critical role to improve the emitting properties of EL devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.25-28
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• 2004

Photocurrent spectrum, photoresponse, and I-V measurements were made for close-packed HgTe nanoparticles without organic capping materials to investigate their photocurrent characteristics in the infrared range. In absorption and photoluminescence (PL) spectra taken for the close-packed nanoparticles film, the wavelengths of exciton peaks was red-shifted, compared with organic capped HgTe nanoparticles dispersed in solution. This red-shift is caused by the lessening of the exciton binding energy. The I-V curves and photoresponse for the close-packed nanoparticles film reveal their dark current and fast photoresponse with no current decay, respectively. The observation suggests that the HgTe nanoparticles are a very prospect material applicable for photodetectors in the whole IR range.

• Journal of the Korean Vacuum Society
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• v.16 no.3
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• pp.221-226
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• 2007

DBR (distributed Bragg reflectors) PSi (porous silicon) composite films displaying dual optical properties, both optical reflectivity and photoluminescence had been developed. DBR PSi samples were prepared by electrochemical etch of heavily doped $p^{++}-type$ silicon wafers (boron doped, polished on the <100> face, resistivity of $0.8-1.2m{\Omega}-cm$, Siltronix, Inc.). Free-standing DBR PSi films were treated with PMMA (polymethyl methacrylate) to produce flexible, stable composite materials in which the PSi matrix is covered with PMMA containing photoluminescent polysiloles. Optical characteristics of DBR PSi/polysilole-impregnated PMMA composite materials exhibit both their photonic reflectivity at 565 nm and photoluminescence at 510 nm, simultaneously. A possible application of this materials will be discussed.