• 한국전기전자재료학회논문지
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• 제15권3호
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• pp.208-213
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• 2002

We present the temperature and excitation power density dependence of the photoluminescence from carbon-doped GaAs epilayers grown on GaAs (311)A substrate by atmospheric pressure metalorganic chemical vapor deposition. The measured temperature dependence of the PL peak energy is well expressed by an empirical formula proposed by Varshni. The thermal quenching mechanism of the intensity of 16 K luminescence peak at 1.480 eV is described with the dominant activation energy of 27$\pm$2 meV. The activation energy shows an evidence that the emission band involves the carbon acceptor in the recombination process.

• 한국결정성장학회지
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• 제25권3호
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• pp.121-126
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• 2015

A novel $Ce^{3+}$ doped $Lu_3MgAl_3SiO_{12}$ phosphor ($Lu_{2.94}Ce_{0.06}MgAl_3SiO_{12}$) was successfully synthesized by a conventional solid-state reaction at $1450^{\circ}C$ for 5 h. The crystal structure of the synthesized phosphor powder was characterized by X-ray diffraction and Rietveld refinement. The prepared phosphor powder showed a broad peak at 550 nm, and the temperature dependence on photoluminescence properties of the prepared $Lu_{2.94}Ce_{0.06}MgAl_3SiO_{12}$ phosphor was investigated from 300 to 525 K. The activation energy for thermal quenching was determined by Arrhenius fitting. The experimental results clearly indicate that prepared $Lu_{2.94}Ce_{0.06}MgAl_3SiO_{12}$ phosphor has great potential for a down-conversion yellow phosphor in white light-emitting diodes.

• 한국재료학회지
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• 제13권10호
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• pp.673-676
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• 2003

We have investigated $Al_{x}$ $Ga_{l-x}$ N/GaN epilayers (x = 0.08, 0.15) grown by metal organic vapor phase epitaxy on sapphire with photoluminescence(PL), and persistent photoconductivity(PPC) experiments. An anomalous S-shaped shift behavior of temperature dependencies of PL peak energy is observed for the x = 0.15 sample. In PPC measurement, showed that the dark current recovery time of $Al_{x}$$Ga_{l-x}$ N/GaN epilayers mainly depends on the Al content. These behaviors are usually attributed to the presence of carrier localization states. All these phenomena are explained based on the alloy compositional fluctuations in the $Al_{x}$ /$Ga_{l-x}$ N/ epilayers. The photocurrent quenching observed in PPC measurements for $Al_{x}$ $Ga_{l-x}$ N/ epilayers less than 0.2 $\mu\textrm{m}$ thickness indicates that the presence of metastable state in the bandgap of GaN layer, and that the excess holes in the valence band recombine with free electrons.

• 한국전기전자재료학회논문지
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• 제30권11호
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• pp.710-716
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• 2017

New white-light-emitting $SrSnO_3:Dy^{3+}$ phosphors were prepared using different concentrations of $Dy^{3+}$ ions via a solid-state reaction. The phase structure, luminescence, and morphological properties of the synthesized phosphors were investigated using X-ray diffraction analysis, fluorescence spectrophotometry, and scanning electron microscopy, respectively. All the synthesized phosphors crystallized in an orthorhombic phase with a major (020) diffraction peak, irrespective of the concentration of $Dy^{3+}$ ions. The excitation spectra were composed of a broad band centered at 298 nm, ascribed to the $O^2-Dy^{3+}$ charge transfer band and five weak bands in the range of 350~500 nm. The emission spectra of $SrSnO_3:Dy^{3+}$ phosphors consisted of three bands centered at 485, 577, and 665 nm, corresponding to the $^4F_{9/2}{\rightarrow}^6H_{15/2}$, $^4F_{9/2}{\rightarrow}^6H_{13/2}$, and $^4F_{9/2}{\rightarrow}^6H_{11/2}$ transitions of $Dy^{3+}$, respectively. As the $Dy^{3+}$ concentration increased from 1 to 15 mol%, the intensities of all the emission bands gradually increased, reached maxima at 15 mol% of $Dy^{3+}$ ions, and then decreased rapidly at 20 mol% due to concentration quenching. The critical distance between neighboring $Dy^{3+}$ ions for concentration quenching was calculated to be $9.4{\AA}$. The optimal white light emission by the $SrSnO_3:Dy^{3+}$ phosphors was obtained when the $Dy^{3+}$ concentration was 15 mol%.

• Bulletin of the Korean Chemical Society
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• 제33권1호
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• pp.137-142
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• 2012

The convergent synthetic strategy for the emissive dendrimers having the chromophore at core via the coppercatalyzed 1,3-dipolar cycloaddition reaction between alkyne and azide was described. 2,7-Diazido-9,9-dioctyl-9H-fluorene, designed to serve as the core in dendrimer, was stitched with the alkyne-functionalized Frechettype and PAMAM dendrons by the click chemistry leading to the formation of the corresponding fluorescent dendrimers in high yields. The preliminary photoluminescence studies indicated that 2,7-diazido-9,9-dioctyl-9H-fluorene showed no fluorescence due to the quenching effect from the electron-rich ${\alpha}$-nitrogen of the azido group but the dendrimers fluoresced due to the elimination of the quenching through the formation of the triazole ring.

• 통합자연과학논문집
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• 제3권1호
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• pp.19-23
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• 2010

A simple and rapid method is described for detecting nitroaromatic explosives in air or seawater with the use of photoluminescent organosilicon compounds. The synthesis, spectroscopic characterization, and fluorescence quenching efficiency of silafluorenes are reported. Silafluorenes were synthesized from the reduction of dilithiobiphenyl with dichlorosilanes. Two silafluorenes were used for the detection of nitroaromatic compounds. Detection of nitroaromatic molecules, such as 2,4-dinitrotoluene (DNT), 2,4,6-trinitrotoluene (TNT), and picric acid (PA), has been explored. A linear Stern-Volmer relationship was observed for the first three analytes. Fluorescence spectra of silafluorenes obtained in either toluene solutions or thin films displayed no shift in the maximum of the emission wavelength. The photoluminescence quenching occurs by a static mechanism.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.191-191
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• 2012

InP quantum dot (QD) - organosilicon nanocomposites were synthesized and their photoluminescence quenching was mainly investigated because of their applicability to white LEDs (light emitting diodes). The as-synthesized InP QDs which were capped with myristic acid (MA) were incompatible with typical silicone encapsulants. Post ligand exchange the MA with a new ligand, 3-aminopropyldimethylsilane (APDMS), resulted in soluble InP QDs bearing Si-H groups on their surface (InP-APDMS) which allow embedding the QDs into vinyl-functionalized silicones through direct chemical bonding, overcoming the phase separation problem. However, the ligand exchange from MA to APDMS caused a significant decrease in the photoluminescent efficiency which is interpreted by ligand induced surface corrosion relying on theoretical calculations. The InP-APDMS QDs were cross-linked by 1,4-divinyltetramethylsilylethane (DVMSE) molecules via hydrosilylation reaction. As the InP-organosilicon nanocomposite grew, its UV-vis absorbance was increased and at the same time, the PL spectrum was red-shifted and, very interestingly, the PL was quenched gradually. Three PL quenching mechanisms are regarded as strong candidates for the PL quenching of the QD nano-composites, namely the scattering effect, Forster resonance energy transfer (FRET) and cross-linker tension preventing the QD's surface relaxation.

• 한국재료학회지
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• 제16권3호
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• pp.183-187
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• 2006

We present the effects of rapid thermal annealing (RTA) temperature on the structural and optical properties of self-assembled InAs quantum dot (QD) structures grown on GaAs substrates by molecular beam epitaxy (MBE). The photoluminescence (PL) measurements are performed in a closed-cycle refrigerator as a function of temperature for the unannealed and annealed samples. RTA at higher temperature results in the increase in island size, the corresponding decrease in the density of islands, and the redshift in the PL emission from the islands. The temperature dependence of the PL peak energy for the InAs QDs is well expressed by the Varshni equation. The thermal quenching activation energies for the samples unannealed and annealed at $600^{\circ}C$ are found to be $25{\pm}5meV$ and $47{\pm}5$ meV, respectively.

• 한국세라믹학회지
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• 제47권2호
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• pp.177-182
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• 2010

To synthesize $Gd_2O_3:Eu^{3+}$ phosphor, gadolinium-europium oxalate precursors were prepared from oxalic acid, NaOH or aqueous ammonia via coprecipitation method. The obtained precursors were heat-treated and then characterized by XRD, SEM and PL. The kinds and amounts of coprecipitant (NaOH or aqueous ammonia) were found to affect the powder morphology and properties of gadolinium-europium oxalate precursors. Two crystalline precursors and one amorphous precursor were synthesized. The nanometer-sized amorphous gadolinium-europium oxalate precursor was first prepared using the oxalate coprecipitation technique. The calcined powders obtained from the amorphous precursor were nearly spherical in shape, and a narrow size distribution was obtained. The NaOH coprecipitant was more effective in the preparation of nanometer-sized spherical powders. A thermal decomposition process was conducted for the three kinds of precursors. The photoluminescence property was also measured as a function of europium content, and concentration quenching occurred for samples with europium concentrations of over 10 mol%.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.238-239
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• 2012

ZnO disk는 Ar 가스의 ON/OFF 사이클을 사용한 기상 이동법으로 성장하였다. 온도 의존성 photoluminescence (PL)은 PL 스펙트럼의 quenching 동작을 관장하는 메커니즘을 연구하기 위해 조사하였다. ZnO disk의 12 K PL 스펙트럼에서 3.364, 3.315, 3.244, 3.212, 3.170, 3.139, 3.100 eV의 피크를 관측되었고, 그것은 각각 excitons bound to neutral donors ($D^{\circ}X$), A-line, first-order longitudinal optical (1LO) phonon replica of A-line (A-1LO), donor-to acceptor pair (DAP), A-2LO, DAP-1LO, A-3LO 이다. $D^{\circ}X$와 A-line 피크는 Varshni 공식에 의해서 피팅을 하였고, 도너 이온화 에너지는 40 meV 이었다. Free excitons, $D^{\circ}X$, A-line의 lifetime은 이론적으로 계산하였고, 온도가 증가함에 따라 lifetime이 증가하였다.