• Journal of the Korean Ceramic Society
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• v.45 no.3
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• pp.146-149
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• 2008

Strontium-substituted $Sr_{1-x}Ba_xAl_2O_4:Eu^{2+},\;Dy^{3+}$ compositions were prepared by the solid state synthesis method. These compositions were characterized for their phase, crystallinity and morphology using powder x-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. Photoluminescence properties were investigated by measuring excitation spectra, emission spectra and decay time for varying Ba/Sr concentrations. Photoluminescence results show higher luminescence and long decay time for $Sr_{1-x}Ba_xAl_2O_4:Eu^{2+},\;Dy^{3+}$(x=0). This is probably due to the influence of the 5d electron states of $Eu^{2+}$ in the crystal field. Long persistence was observed for these compositions due to $Dy^{3+}$ co-doping.

• Journal of Integrative Natural Science
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• v.14 no.4
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• pp.147-154
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• 2021

A luminescent porous silicon sensor, whose surface was passivated with organic molecule via hydrosilylation under various conditions, has been researched to measure the photoluminescence (PL) stability of porous silicon (PSi). Photoluminescent PSi were synthesized by an electrochemical etching of n-type silicon wafer under the illumination with a 300 W tungsten filament bulb during the etching process. The PL of PSi displayed at 650 nm, which is due to the quantum confinement of silicon quantum dots in the PSi. To stabilized the photoluminescence of PSi, the hydrosilylation of PSi with silole molecule containg vinyl group was performed. Surface morphologies of fresh PSi and surface-modified PSi were obtained with a cold FE-SEM. Optical characterization of red photoluminescent silicon quantum dots was investigated by UV-vis and fluorescence spectrometer.

• Applied Science and Convergence Technology
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• v.27 no.3
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• pp.56-60
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• 2018

The optical properties of the digital-alloy $(In_{0.53}Ga_{0.47}As)_{1-z}/(In_{0.52}Al_{0.48}As)_z$ grown by molecular beam epitaxy as a function of composition z (z = 0.4, 0.6, and 0.8) have been studied using temperature-dependent photoluminescence (PL) and time-resolved PL (TRPL) spectroscopy. As the composition z increases from 0.4 to 0.8, the PL peak energy of the digital-alloy $In(Ga_{1-z}Al_z)As$ is blueshifted, which is explained by the enhanced quantization energy due to the reduced well width. The decrease in the PL intensity and the broaden FWHM with increasing z are interpreted as being due to the increased Al contents in the digital-alloy $In(Ga_{1-z}Al_z)As$ because of the intermixing of Ga and Al in interface of InGaAs well and InAlAs barrier. The PL decay time at 10 K decreases with increasing z, which can be explained by the easier carrier escape from InGaAs wells due to the enhanced quantized energies because of the decreased InGaAs well width as z increases. The emission energy and luminescence properties of the digitalalloy $(InGaAs)_{1-z}/(InAlAs)_z$ can be controlled by adjusting composition z.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.2
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• pp.84-88
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• 2021

The change of the photoluminescence properties of La2O3-CaF2-Al2O3-SiO2 glass-ceramics doped with rare earth material, that is used as laser and optical sensors, was analyzed according to heat treatment temperature. The heat treatment conditions for fabricating glass-ceramics were obtained through non-isothermal thermal analysis, and X-ray diffraction analysis was performed to determine the degree of crystal growth and kinds of crystal phases generated according to the heat treatment temperature. Using Scherrer's equation, it was predicted that crystals with a size of 25~40 nm would be generated inside the glass-ceramics. Photoluminescence (PL) analysis showed that the specimens heat-treated at 660℃ to 670℃ for 1 hour had the highest PL intensity. Also, from the CIE color coordinate analysis, all glass-ceramics specimens emitted red-orange light regardless of the heat treatment condition.

• Transactions on Electrical and Electronic Materials
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• v.13 no.2
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• pp.102-105
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• 2012

The structural, electrical, and optical properties of layer-by-layer ZnO nanoparticles deposited using sol-gel spin coating technique were studied and now presented. Thicknesses of the thin films were varied by increasing the number of deposited layers. As part of our characterization process, XRD and FE-SEM were used to characterize the structural properties, current-voltage measurements for the electrical properties, and UV-Vis spectra and photoluminescence spectra for the optical properties of the ZnO thin films. ZnO thin films with thicknesses ranging from 14.2 nm to 62.7 nm were used in this work. Film with thickness of 42.7 nm gave the lowest resistivity among all, $1.39{\times}10^{-2}{\Omega}{\cdot}cm$. Photoluminescence spectra showed two peaks which were in the UV emission centered at 380 nm, and visible emission centered at 590 nm. Optical transmittance spectra of the samples indicated that all films were transparent (>88%) in the visible-NIR range. The optical band gap energy was estimated to be 3.21~3.26 eV, with band gap increased with the thin film thickness.

• Journal of Sensor Science and Technology
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• v.14 no.5
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• pp.362-367
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• 2005

ZnO films were deposited on MgO substrates (ZnO/MgO) by ultrasonic spray pyrolysis. Substrate temperature varied from $250^{\circ}C$ to $350^{\circ}C$. The crystallographic properties and surface morphologies of the ZnO/MgO films were studied by X-ray diffraction and scanning electron microscopy. The properties of photoluminescence (PL) for the films were investigated by dependence of PL spectra on the substrate temperature and the annealing temperature. The ZnO/MgO films prepared at $350^{\circ}C$ showed the strongest Ultraviolet light emission peak at 18 K and 300 K among the films in this study. The annealing process increases the visible light emission, which is due to the increased oxygen vacancies.

• Korean Journal of Materials Research
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• v.16 no.1
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• pp.58-62
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• 2006

Effects of doping concentration and annealing atmosphere on the luminescent properties of $Er^{3+}$ doped ZnO phosphor powders were investigated. Photoluminescence (PL) spectra of ZnO:Er exhibit an orange emission band at around 575 nm, while those of pure ZnO show a green emission at 520 nm. Emission difference between ZnO:Er and pure ZnO is attributed to the energy transfer of Er ions in ZnO. The highest PL intensity is obtained by doping 1 mol% Er to ZnO. Luminescent properties of ZnO:Er phosphors annealed at $N_2$+vacuum atmosphere are superior to those annealed at $N_2$ atmosphere.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.525-528
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• 1999

The luminescence of bismuth and cerium doped yttrium aluminum based Phosphors $Y_{3}$/Al$_{5}$/O$_{12}$ and (Y$_{0.8}$/Gd$_{0.2}$)$_3$Al$_{5}$/O$_{12}$ prepared by a solid-state reaction method were studied. These samples which were fired at 1, 20$0^{\circ}C$ show the characteristic X-ray diffraction patters for the main phase(420) of YAG. This study indicates that the both flux and remained bismuth after the firing phosphor materials give rise to affect the photoluminescence properties. Therefore, it was investigated that both the XRD patterns arid the PL properties were affected by the controlling experimental process variables.riables.les.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.437-438
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• 2007

A Iridium complexes has been synthesised from the reaction of [$lr(ppy)_2Cl_2$] with 5-bromo-2.2'-bipyridine, 5-Ethynyl-2.2'-bipyridine Characterization of the complexes were by FT-IR, $^1H(^{13}C)$-NMR and photo-, electro-chemistry properties were showed by UV-vis, Cyclicvoltammetry, Photoluminescence.

• Bulletin of the Korean Chemical Society
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• v.29 no.11
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• pp.2161-2168
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• 2008