• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.11 no.8
• /
• pp.646-651
• /
• 1998

In this present study, the luminescence characteristics and mechanism of energy $CaTiO_3$:Pr phosphor were studied using disk specimens sintered at various temperatures and envirenment. A single-phase $CaTiO_3$:Pr was synthesized by sintering above 140$0^{\circ}C$ and its crystal structure was found to be perovskite orthorhombic. A dominant peak around 360 nm and a broad peak around 395 nm were observed in the PLE(Photoluminescence Excitation) spectrum of $CaTiO_3$:Pr with fixed emission wavelength at 612 nm, the decay time of 360 nm excitation was found to be longer than that of 395 nm excitation. From this result, it is assumed that the free carrier excited to 360 nm is transferred to 395 nm energy level. Therefore, the decrease in 395 nm intensity observed in CaTiO$_3$:Pr specimens sintered in Ar gas environment induced shorter decay time and improved CL luminescence.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.05a
• /
• pp.481-484
• /
• 1999

The undoped-InSe and Sn-doped InSe single crystals were grown by vertical Bridgman method and their properties were invesigated. These crystals were obtained by lowering the quartz ampoule for growth in the furnace and growth rate at optimum condition is 0.4mm/hr. The orientations and the crystallinites of these crystals were identified by X-ray diffraction(XRD), double crystal rocking curve(DCRC) and etch-pit density(EPD) measurements. From the Raman spectrum at room temperature, TO, LO modes together with their overtones and combinations were observed. Optical properties were investigated by photoluminescence at 12K and direct band gap of these crystals obtained from optical absorption spectrum. Compared with undoped-lnSe, electrical properties of Sn-doped InSe were increased and the electrical conductivity type were n-type. But electrical properties along growth direction of crystals and radial direction of wafer showed nearly uniform distribution.

• Bulletin of the Korean Chemical Society
• /
• v.35 no.4
• /
• pp.1077-1081
• /
• 2014

Polyacrylamide (PAM) -HgS nanocomposites were successfully prepared in polyacrylamide (PAM) matrix. From TEM and XRD characterizations, the synthesized HgS nanocrystals were chain-like spherical in shape with a diameter of about 40-60 nm and high crystalline quality. The quantum-confined effect of HgS nanocrystals was confirmed by UV-vis diffuse reflection spectra. The optical properties of products were investigated by using photoluminescence (PL) spectra, which showed that HgS nanocrystals exhibited good optical properties with maximum emission peak at about 640 and 650 nm at different reaction temperatures. The interaction of HgS nanocrystals with PAM was studied through FT-IR spectroscopy and TG analysis, which suggested that $Hg^{2+}$ could interact with functional groups of PAM. The experimental results indicated that PAM not only induced nucleation, but also inhibited further growth of HgS crystals and play an important role in the formation of PAM/HgS nanocomposites. In addition, the possible mechanism of HgS nanoparticles growth in PAM solution was also discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.25 no.5
• /
• pp.188-192
• /
• 2015

Gemological and spectroscopic properties of HPHT synthetic diamonds from New Diamond Technology (NDT) company in St. Petersburg (Russia) were examined. Their color (colorless, near-colorless with some boron and Fancy blue with high boron content) and clarity ($VVS-SI_1$) grades were comparable to those of top natural diamonds. NDT synthetic diamonds fluoresced and phosphoresced blue or orange under SWUV light. Photoluminescence spectra revealed H3 center with very small intensity and NV centers. The intensity of H3 in NDT synthetic diamond has very weak in comparison with natural one. Using a combination of gemological and spectroscopic tests, gem-quality synthetic diamonds from NDT can be distinguished from natural diamonds of similar quality.

• Journal of the Korean Chemical Society
• /
• v.50 no.2
• /
• pp.137-140
• /
• 2006

In this report, Europium doped strontium barium gallium silicate ((Sr,Ba)2Ga2SiO7:Eu2+) phosphor has been synthesized by conventional solid-state method and investigated luminescent characteristic. Appropriate proportions of the raw materials were mixed in an agate mortar with acetone to obtain starting mixtures. Also, this phosphor was prepared by simple process under the reduction atmosphere (25% H2/75% N2). This phosphor can be applicated to the green phosphor for white LED because it has green emission band (513 nm), which emits efficiently under the 405nm excitation energy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.566-569
• /
• 1999

The blue emitting BAM Phosphor Particles with various compositions were Prepared by the spray Pyrolysis. The effect of composition on the morphology of BAM particles was Investigated. In the case of BaMgAl$_{10}$ /O$_{22}$ : Eu$^{2+}$, the morphology of particles with sphericity and non-aggregation characteristics disappeared after post-treatment at 1400 $^{\circ}C$ for 3 hrs. On the other hand, the ocher composition particles except BaMgAl$_{10}$ /O$_{22}$ : Eu$^{2+}$ maintained their original morphology after post-treatment, even if the particles were prepared at low temperatures in the spray pryrolysis. The BAM particles with MgAl$_{2}$/O$_4$as intermediate material at low post-treatment temperature had high thermal stability and maintained sphericity of particles after post-treatment. All the samples had main omission peak at 450 nm, which corresponds to blue emission. The optimum post-treatment temperature of BAM:Eu$^{2+}$ particles for the maximum PL(photoluminescence) intensity in the spray pylolysis was 1200 $^{\circ}C$ because of high crystallinity, Phase-Purity, and good morphology.ology.

• Electrical & Electronic Materials
• /
• v.10 no.1
• /
• pp.33-38
• /
• 1997

The green emitting phosphors of the Field Emission Display(FED), Al codoped ZnGa$_{2}$O$_{4}$:Mn, were synthesized and sintered at high temperature. From X-ray diffraction measurements, it was confirmed that poly crystalline ZnGa$_{2}$O$_{4}$ and ZnAI$_{2}$O$_{4}$ solid solution coexist in Al codoped ZnGa$_{2}$O$_{4}$:Mn. Photoluminescence spectra of Al codoped ZnGa$_{2}$O$_{4}$:Mn show that the main peak position is shifted from 504 nm to 513 nm with the increase of Al concentration. The brightness was improved with the amount of Al dopant. It showed the maximum value at the doping level of 0.03 mole and then, it degraded rapidly. These results are due to the superposition of emission from . ZnGa$_{2}$O$_{4}$:Mn and ZnAI$_{2}$O$_{4}$:Mn.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.2
• /
• pp.93-97
• /
• 2010

We have studied the effect of the chemical composition of the ZnO nanorod surface on the optical characteristics. The surface was treated with H- and O-plasma at different surface temperatures. The chemical composition of the surface of the ZnO nanorod, being investigated by Auger Electron Spectroscopy(AES), was related to the Photoluminescence(PL) data reported in our previous results. The AES showed the opposite results for the $H_2$ and $O_2$ plasma treatments. The ratio of Zn to O on the surface of the ZnO nanorod increased in the case of $H_2$ plasma, while the composition rate of O increased after $O_2$ plasma treatment. The AES results seems to be correlated to the shift in PL peaks. The increase in the composition rate of Zn on the surface of ZnO nanorod is considered to cause the blue shift of the UV peak. On the contrary, the relative increase of O is considered to cause the red shift in PL peaks.

• Journal of the Korea Institute of Military Science and Technology
• /
• v.13 no.4
• /
• pp.659-664
• /
• 2010

The ZnS/CdS thin films were made using 99.99% ZnS and CdS(Aldrich) powders in $7{\times}10^{-6}torr$. The ZnS layer was coated over the CdS layer on an AlOx membrane within a vacuum, at the average speed of $1{\AA}/sec$. After studying the ZnS/CdS and CdS thin films(both with the dimensions of 2.52nm), using fluorescence spectroscopy and comparing the respective results together, we found that although both of the resulting spectra peaked at 390nm, the ZnS/CdS thin films showed a narrower peak, and a higher intensity of photoluminescence than the CdS thin films. The particles of ZnS/CdS thin films also proved to be more homogeneous in size. In addition, the ZnS layer acted as a protective layer. Also, after studying the spectra of ZnS/CdS thin films taken 30 days after their preparation, we found no signs of aging. These results were verified through the scanning electron microscopy(SEM), EDX analysis, thin film X-ray diffraction, and luminescence spectroscopy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.11
• /
• pp.1192-1198
• /
• 2004

Hole transporting polymer(poly［N-(p-diphenylamine)phenylmethacrylamide］, PDPMA) was doped with nile red dye at various concentrations to study the influence of doping on the energy transfer during light emitting processes. Organic LEDs composed of ITO/blend(PDPMA -nile red)/ Alq$_3$/Al as well as thin films of blend(PDPMA -nile red)/ Alq$_3$ were manufactured for investigating photoluminescence, electroluminescence, and current-voltage characteristics. Atomic Force Microscopy was also used to observe surface morphology of the blend films. It was found that such doping. significantly influences the efficiency of the energy transfer from the Alq$_3$ layer to blended layer and the optical/electrical properties could be optimized by choosing the right concentration of the dye molecule. The results also showed a interesting correlation with the morphological aspect, i.e. the optimum luminescence at the concentration with the least surface roughness. When the concentration of nile red was 0.8 wt%, the maximum energy transfer could be achieved.