• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.1
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• pp.76-80
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• 1997

ZnSe single crystals were grown by seeded chemical vapor transport in $H_2$ atmosphere. The influence of the growth parameters on the crystal defect was investigated. The grown ZnSe single crystal was characterized by chemical etching, X-ray rocking curve and photoluminescenc e measurements.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.819-821
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• 2002

Photoluminescenc (PL) and low-voltage cathodoluminescence (CL) characteristics of $[xSrTiO_3+(1-x)Li_2TiO_3]:Pr^{3+}$ and $[xSrTiO_3+(1-x)Na_2TiO_3]:Pr^{3+}$ systems were investigated. The red luminescence intensities of these compounds are enhanced remarkably by the incorporation of $Li^+$ or $Na^+$ ion as compared to that of $SrTiO_3:Pr^{3+}$. The enhanced luminescence is speculated to result from both the charge compensation of $Pr^{3+}$ site and oxygen vacancies generated in the lattices by $Li^+$ or $Na^+$ ion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.602-605
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• 1999

We dried emitting layer of EL device at 30, 80, I20 and $150^{\circ}C$ for Ihr to investigate the effects to the emission characteristics of devices. PL intensity of P3HT thin film decreased with increasing the drying temperature. But, the EL intensity and stability of device with emitting layer dried at $150^{\circ}C$ were the best. We think it s because of absence of water and remaining solvent in P3HT emitting layer. So, We suggest that the drying temperature of emitting layer of EL device should be select slightly low temperature than its glass transition temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.41-45
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• 2003

Impurities transmuted in GaN thin film and GaN nanowires after neutron irradiation are studied in this work. The structural properties of GaN nanowires were shown using by Transmission Electron Microscope(TEM). Transmuted impurities that are expected to be doped into GaN thin film and GaN nanowires are then confirmed by photoluminescence(PL). Transmuted atom in GaN materials is Ge atom, Ge-related peaks in GaN thin film lead to emit at 2.9eV, 2.25eV. But emission bands at 2.9eV, 2.25eV are not shown in PL spectra of GaN nanowires. Our experimental results are expected to give deep impact on nano-material doping technology for the achievement of the fabrication of nano-devices.