• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.61.1-61.1
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• 2011

We report on a detailed study on gap-state distribution in thin amorphous silicon layers(a-Si:H) with film thickness between 5 nm and 20 nm c-Si wafers performed by UV excited photoelectron spectroscopy(UV-PES). We measured how the work function, the gap state density, the position of the Fermi-level and the Urbch-energy depend on the layer thickness and the doping level of the ultra thin a-Si:H(n) layer. It was found, that for phosphorous doping the position of the Fermi level saturates at $E_F-E_V$=1.47 eV. This is achieved at a gas phase concentration of 10000 ppm $PH_3$ in the $SiH_4/H_2$ mixture which was used for the PECVD deposition process. The variation of the doping level from 0 to 20000 ppm $PH_3$ addition results in an increase of the Urbach energy from 65 meV to 101 meV and in an increase of the gap state density at midgap($E_i-E_V$=0.86eV) from $3{\times}10^{18}$ to $2{\times}1019cm^{-3}eV^{-1}$.

• Bulletin of the Korean Chemical Society
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• v.30 no.6
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• pp.1353-1356
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• 2009

This study examined the adsorption of CO on a Mo(110) surface by Thermal Desorption Spectroscopy (TDS) and synchrotron-radiation based photoemission spectroscopy (SRPES). CO desorption was observed at approximately 400 K ($\alpha$-CO) and > 900 K ($\beta$-CO). When CO was exposed to Mo(110) at 100 K, it showed a tilted structure at low CO coverage and a vertical structure after saturation of the tilted CO. After heating the CO-precovered sample to 900 K, a broad peak at 12 eV below the Fermi level was identified in the valence level spectra, which was assigned to either the 4$\sigma$-molecular orbital of CO, or 2s of dissociated carbon. TDS results of the $\beta$-CO showed a first order desorption. These results are in a good agreement with the observations of CO adsorption on W(110) surfaces.

• Archives of Metallurgy and Materials
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• v.66 no.3
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• pp.751-754
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• 2021

Rutile-TiO₂ nanorod thin films were formed on Ti disks via alkali treatment in NaOH solutions followed by heat treatment at 700℃. Ag nanoparticles were loaded on nanorods using a photo-reduction method to improve the photocatalytic properties of the prepared specimen. The surface characterization and the photo-electrochemical properties of the Ag-loaded TiO₂ nanorods were investigated using a field-emission scanning electron microscope (FE-SEM), X-ray photoelectron spectroscopy (XPS), UV-Vis spectroscopy and electrochemical impedance spectroscopy (EIS). The TiO₂ nanorods obtained after the heat treatment were 80 to 180 nm thick and 1 ㎛ long. The thickness of the nanorods increased with the NaOH concentration. The UV-Vis spectra exhibit a shift in the absorption edge of the Ag-loaded TiO₂ to the visible light range and further narrowing of the bandgap. The decrease in the size of the capacitive loops in the EIS spectra showed that the Ag loading effectively improved the photocatalytic activity of the TiO₂ nanorods.

• Bulletin of the Korean Chemical Society
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• v.31 no.8
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• pp.2170-2174
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• 2010

The surfaces of $TiO_2$ and ZnO nanoparticles have been modified by gold (Au) nanoparticles by a reduction method in solution. Their interfacial electronic structures and optical absorptions have been studied by depth-profiling X-ray photoelectron spectroscopy (XPS) and UV-vis absorption spectroscopy, respectively. Upon Au-modification, UV-vis absorption spectra reveal a broad surface plasmon peak at around 500 nm. For the as-prepared Au-modified $TiO_2$ and ZnO, the Au $4f_{7/2}$ XPS peaks exhibit at 83.7 and 83.9 eV, respectively. These are due to a charge transfer effect from the metal oxide support to the Au. For $TiO_2$, the larger binding energy shift from that (84.0 eV) of bulk Au could indicate that Au-modification site of $TiO_2$ is different from that of ZnO. On the basis of the XPS data with sputtering depth, we conclude that cationic (1+ and 3+) Au species, plausibly $Au(OH)_x$ (x = 1-3), commonly form mainly at the Au-$TiO_2$ and Au-ZnO interfaces. With $Ar^+$ ion sputtering, the oxidation state of Ti dramatically changes from 4+ to 3+ and 2+ while that (2+) of Zn shows no discernible change based on the binding energy position and the full-width at half maximum (FWHM).

• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.7
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• pp.731-736
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• 2012

A new method for producing boron-containing nanoparticles is described. Boron trichloride ($BCl_3$) and methane ($CH_4$) are dissociated through injection into a thermal plasma followed by a nucleation process producing boron or boron carbide nanoparticles. X-ray photoelectron spectroscopy was used to detect B-C bonds related to the carbide state and to probe the ratio of boron to carbon in the B-C bond structure. In addition, nanoparticles were characterized with scanning transmission electron microscopy and electron energy loss spectroscopy. It was found that nanoparticles were in the range 30-70 nm and a boron to carbon ratio in the B-C bond structure of up to 2 can be reached when $BCl_3$ of 20 sccm and $CH_4$ of 25 sccm were used.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.12
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• pp.959-964
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• 2001

We investigated the etching characteristics of YMnO$_3$ thin films in high-density plasma etching system. In this study, YMnO$_3$ thin films were etched with CF$_4$/Ar gas chemistries in inductively coupled plasma(ICP). Etch rates of YMnO$_3$ increased up to 20% CF$_4$ in CF$_4$/(CF$_4$+Ar), but decreased with furthermore increasing CF$_4$ in CF$_4$/(CF$_4$+Ar). In optical emission spectroscopy (OES) analysis, F radical and Ar* ions in plasma at various gas chemistries decreased with increasing CF$_4$ content. Chemical states of YMnO$_3$ films exposed in plasma were investigated with x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). There is a chemical reaction between metal (Y, Mn) and F and metal-fluorides were removed effectively by Ar ion sputtering. YF$_{x}$, MnF$_{x}$ such as YF, YF$_2$, YF$_3$ and MnF$_3$ were detected using SIMS analysis. The etch slope is about 65$^{\circ}$ and cleasn surface. surface of the etched YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). The etch profile was also investigated by scanning electron microscopy (SEM).EM).

• Applied Science and Convergence Technology
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• v.25 no.1
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• pp.19-24
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• 2016

In this study, we evaluated the change of electronic structure during redox process in cerium-doped $ZrO_2$ grown by sol gel method. By sol-gel method, we could obtain cerium-doped $ZrO_2$ in high oxygen partial pressure and low temperature. After post annealing process in nitrogen ambient, the film is deoxidized. We used spectroscopic and theoretical methods to analysis change of electronic structure. X-ray absorption spectroscopy (XAS) for O K1-edge and Density Functional Theory (DFT) calculation using VASP code were performed to verify the electronic structure of the film. Also, high resolution x-ray photoelectron spectroscopy (HRXPS) for Ce 3d was carried out to confirm chemical bond of cerium doped $ZrO_2$. Through the investigation of the electronic structure, we verified as followings. (1) During reduction process, binding energy of oxygen is increase. Simultaneously, oxidation state of cerium was change to 4+ to 3+. (2) Cerium 4+ and cerium 3+ states were generated at different energy level. (3) Absorption states in O K edge were mainly originated by Ce 4+ $f_0$ and Ce 3+, while occupied states in valance band were mainly originated from Ce 4+ $f_2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.345-345
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• 2011

MgO는 암염구조를 가진 전형적인 이온 결합성 화합물로서 7.8eV의 띠틈을 갖고 흡습성이 강하다. 면 방전 구조 PDP에서 MgO 보호막은 면 방전으로 인한 유전층의 식각을 보호하고 2차 전자 방출을 통해 방전 전압을 낮추는 역할을 한다. 하지만 MgO 보호막은 증착시 흡수된 수분이 제거되어야 하고, 방전 특성 개선 및 방전 효율 향상을 위해 가공 처리에 관한 연구가 진행 되어야 한다. 본 연구는 MgO 보호막의 전자적 특성의 변화를 알아보기 위해 $O_2$ 분위기에서 전자빔 증착법을 이용해 MgO Powder를 사용하여 시료를 제작하였다. 표면에 흡착된 수분제거로 인한 특성 변화를 알아보기 위해 진공 챔버내에서 시료를 $500^{\circ}C{\sim}550^{\circ}C$의 열처리를 실시한 후 XPS(X-ray Photoelectron Spectroscopy), REELS(Reflection Electron Energy Loss Spectroscopy), UPS(Ultraviolet photoelectron Spectroscopy)를 이용하여 전자적 특성을 연구하였다. XPS 측정결과 시료의 열처리를 통해 C1s spectrum의 O-C=O(289eV) binding energy가 없어져 박막에 흡착된 불순물이 제거 되었으며 O1s spectrum에서 Hydroxides가 감소하고 530.0eV의 MgO 결합에너지쪽으로 커짐으로써 박막의 구조를 확인할 수 있었다. 그리고 $O^2$ 분위기에서 성장시킨 MgO 박막 기판을 열처리 후 REELS를 이용해 띠틈을 얻어보면 Ep=500eV에서 띠틈이 6.77eV, Ep=1500eV에서 띠틈이 7.33eV로 각각 측정되었다. Ep=500eV의 REELS 스펙트럼으로부터 산소 결함에 의한 표면 F Center는 4.22eV로 확인되었다.

• Transactions on Electrical and Electronic Materials
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• v.1 no.3
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• pp.14-17
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• 2000

Giga bit dynamic random access memory(DRAM) requires the capacitor of high dielectric films. Some metal oxides films have been proposed as the dielectric material . And Pt is one of the most promising electrode materials. However very little has been done in developing the etching technologoy Pt film. Therefore, it is the first priority to develop the technology for plasma etching of Pt film. In this study, the dry etching of Pt film was investigated in Inductively Coupled Plasma(ICP) etching system with Cl$_2$/Ar and HBr/Cl$_2$/Ar gas mixing. X-ray photoelectron spectroscopy (XPS) was used in analysis of sidewall residues for the understanding of etching mechanism. We found the etch residues on the pattern sidewall is mainly Pt-Pt, Pt-Cl and Pt-Br compounds, Etch profile was observed by Scanning Electron Spectroscopy(SEM) . The etch rate of Pt film at 10%, Cl$_2$/90% Ar gas mixing ration was higher than at 100%. Ar. Addition of HBr to Cl$_2$/Ar as an etching gas led to generally higher selectivity to SiO$_2$. And the etch residues were reduced at 5% HBr/5% Cl$_2$/90% Ar gas mixing ration. These pages provide you with an examples of the layout and style which we wish you to adopt during the preparation of your paper, Make the width of abstract to be 14cm.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.281-287
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• 2009

Pd was deposited on magnesium-oxide-covered magnesium ribon substrate by metal thermal evaporation method in high vacuum. The electronic and chemical properties of Pd samples with different coverages were studied using in-situ X-ray Photoelctron Spectroscopy (XPS) and Field Emission Scanning Electron Microscopy (SEM). For relatively lower amounts of Pd deposited(< 1nm), separate Pd particles could be observed, whereas at higher Pd coverages, Pd thin films caused by agglomeration of Pd nanoparticles was found. The metal support interaction with Pd-support was observed. The Pd atoms on the metal oxide/metal interface were partially negative charged by charge transfer.