• Journal of the Korean Society of Marine Environment & Safety
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• v.17 no.3
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• pp.265-268
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• 2011

In this paper, we designed and fabricated that fog alarm equipment detected to crew in maritime fog. Developed fog alarm equipment was combined sensor and a transmitter-receiver module using emitting device unit and receiver photoelectric element infrared LED using only the receive sensitivity was low, miniaturization. Experiment of the fabricated device had a standard that was humidity 70%, the fabricated one generating artificial-fog within visibility 1km. When humidity is over 70%, the fabricated one generates alarming sounds for a warning. When developed device apply to vessel will be able to respond quickly, according to dense fog in the accident.

• Current Photovoltaic Research
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• v.3 no.4
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• pp.130-134
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• 2015

The high efficiency cell research processes through the KF post deposition treatment (PDT) of the $Cu(In,Ga)Se_2(CIGS)$ thin film has been very actively progress. In this study, it CIGS thin film deposition process when KF PDT 300 to the processing temperature, 350, $400^{\circ}C$ changed to soda-lime glass (SLG) efficiency of the CIGS thin film characteristics, and solar cell according to Na presence of diffusion from the substrate the effects were analyzed. As a result, the lower the temperature of KF PDT and serves to interrupt the flow of current K-CIGS layer is not removed from the reaction surface, FF and photocurrent is decreased significantly. Blocking of the Na diffusion from the glass substrate is significantly increased while the optical voltage, photocurrent and FF is a low temperature (300, $350^{\circ}C$) in the greatly reduced, and in $400^{\circ}C$ tend to reduce fine. It is the presence of Na in CIGS thin film by electron-induced degradation of the microstructure of CIGS thin film is expected to have a significant impact on increasing the hole recombination rate a reaction layer is formed of the K elements in the CIGS thin film surface.

• Transactions on Electrical and Electronic Materials
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• v.14 no.3
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• pp.160-163
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• 2013

We investigated the effect of light intensity and wavelength of a solar cell device by using photoconductive atomic force microscopy (PC-AFM). The $POCl_3$ diffusion doping process was used to produce a p-n junction solar cell device based on a Poly-Si wafer and the electrical properties of prepared solar cells were measured using a solar cell simulator system. The measured open circuit voltage ($V_{oc}$) is 0.59 V and the short circuit current ($I_{sc}$) is 48.5 mA. Also, the values of the fill factors and efficiencies of the devices are 0.7% and approximately 13.6%, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, was used for direct measurements of photoelectric characteristics in local instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics were observed. Results obtained through PC-AFM were compared with the electric/optical characteristics data obtained through a solar simulator. The voltage ($V_{PC-AFM}$) at which the current was 0 A in the I-V characteristic curves increased sharply up to 1.8 $mW/cm^2$, peaking and slowly falling as light intensity increased. Here, $V_{PC-AFM}$ at 1.8 $mW/cm^2$ was 0.29 V, which corresponds to 59% of the average $V_{oc}$ value, as measured with the solar simulator. Also, while light wavelength was increased from 300 nm to 1,100 nm, the external quantum efficiency (EQE) and results from PC-AFM showed similar trends at the macro scale, but returned different results in several sections, indicating the need for detailed analysis and improvement in the future.

• Korean Journal of Materials Research
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• v.28 no.11
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• pp.680-684
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• 2018

We investigate the effect of light intensity and wavelength of a solar cell device using photoconductive atomic force microscopy(PC-AFM). A $POCl_3$ diffusion doping process is used to produce a p-n junction solar cell device based on a polySi wafer, and the electrical properties of prepared solar cells are measured using a solar cell simulator system. The measured open circuit voltage($V_{oc}$) is 0.59 V and the short circuit current($I_{sc}$) is 48.5 mA. Moreover, the values of the fill factors and efficiencies of the devices are 0.7 and approximately 13.6 %, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, is used for direct measurements of photoelectric characteristics in limited areas instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics are observed. Results obtained through PC-AFM are compared with the electric/optical characteristics data obtained through a solar simulator. The voltage($V_{PC-AFM}$) at which the current is 0 A in the I-V characteristic curves increases sharply up to $18W/m^2$, peaking and slowly falling as light intensity increases. Here, $V_{PC-AFM}$ at $18W/m^2$ is 0.29 V, which corresponds to 59 % of the average $V_{oc}$ value, as measured with the solar simulator. Furthermore, while the light wavelength increases from 300 nm to 1,100 nm, the external quantum efficiency(EQE) and results from PC-AFM show similar trends at the macro scale but reveal different results in several sections, indicating the need for detailed analysis and improvement in the future.

• 전기의세계
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• v.25 no.5
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• pp.63-69
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• 1976

Among various types of photo-electric energy conversion element which can transfer solar energy into electric energy through the photo voltaic effect, Si solar cells were investigated on photoelectric characteristics, improvements of its efficiency and economical evaluation for its production cost. To study the above subjects, we decided best conditions on fabricating of thin film Si solar cell by epitaxial growth and knew that the thin solar cell by epitaxial growth was more efficient than that by diffusion process. And also higher photo voltaic output was obtained as a effect of SiO as antireflection coating by several methods, i.e. vacuum evaporating techniques of electrode to decrease the contact resistance and to form best ohmic contact, and concentration techniques of sun's ray by lenz or both-sided illumination through special structure for reflection using mirrors.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2002.09a
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• pp.411-414
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• 2002

The CdTe semiconductor detector has a higher detection efficiency for x-rays and $\square$amma rays and a wider energy band gap compared with Si and Ge semiconductor detectors. Therefore, the size of the detector element can be made small, and can be operated at room temperature. The interaction between a CdTe detector and incident x-rays is mainly photoelectric absorption in the photon energy range of up to 100 keV. In this energy range, Compton effects are almost negligible. We have developed a 256 channel CdTe array detector system for monochromatic x-ray CT using synchrotron radiation. The CdTe array detector system, the element size of which is 1.98 mm (h) x 1.98 mm (w) x 0.5 mm (t), was operated in photon counting mode. In order to improve the spatial resolution, we tilted the CdTe array detector against the incident parallel monochromatic x-ray beam. The experiments were performed at the BL20B2 experimental hutch in SPring-8. The energy of incident monochromatic x-rays was set at 55 keV. Phantom measurements were performed at the detector angle of 0, 30 and 45 degrees against the incident parallel monochromatic x-rays. The linear attenuation coefficients were calculated from the reconstructed CT images. By increasing the detector angle, the spatial resolutions were improved. There was no significant difference between the linear attenuation coefficients which were corrected by the detector angle. It was found that this method was useful for improving the spatial resolution in a parallel monochromatic x-ray CT system.

• Korean Journal of Materials Research
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• v.32 no.2
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• pp.57-65
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• 2022

Herein a rich, Se-nanoparticle modified Mo-W₁₈O₄₉ nanocomposite as efficient hydrogen evolution reaction catalyst is reported via hydrothermal synthesized process. In this work, Na₂SeSO₃ solution and selenium powder are used as Se precursor material. The structure and composition of the nanocomposites are characterized by X-ray diffraction (XRD), high-resolution field emission scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), EDX spectrum analysis and the corresponding element mapping. The improved electrochemical properties are studied by current density, and EIS analysis. The as-prepared Se modified Mo-W₁₈O₄₉ synthesized via Na₂SeSO₃ is investigated by FE-SEM analysis and found to exhibit spherical particles combined with nanosheets. This special morphology effectively improves the charge separation and transfer efficiency, resulting in enhanced photoelectric behavior compared with that of pure Mo-W₁₈O₄₉. The nanomaterial obtained via Na₂SeSO₃ solution demonstrates a high HER activity and low overpotential of -0.34 V, allowing it to deliver a current density of 10 mA cm^-2.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.441-441
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• 2009

Dye-sensitized solar cells (DSSCs) have been widely investigated as a next-generation solar cell because of their simple fabrication process and low coats. The cells use a porous nanocrystalline TiO2 matrix coated with a sensitizer dye that acts as the light-harvesting element. The photo-exited dye injects electrons into the $TiO_2$ particles, and the oxide dye reacts with I- in the electrolyte in regenerative cycle that is completed by the reduction of $I_3^-$ at a platinum-coated counter electrode. Since $TiO_2$ porous film plays a key role in the enhancement of photoelectric conversion efficiency of DSSC, many scientists focus their researches on it. Especially, a high light-to-electricity conversion efficiency results from particle size and crystallographic phase, film porosity, surface structure, charge and surface area to volume ratio of porous $TiO_2$ electrodes, on which the dye can be sufficiently adsorbed. Effective treatment of the photoanode is important to improve DSSC performance. In this paper, to obtain properties of surface and dispersion as nitric acid treated $TiO_2$ photoelectrode was investigate. The photovoltaic characteristics of DSSCs based the electrode fabricated by nitric acid pre-treatment $TiO_2$ materials gave better performances on both of short circuit current density and open circuit voltage. We compare dispersion of $TiO_2$ nanoparticles before and after nitric acid treatment and measured Ti oxidized state from XPS. Low charge transfer resistance was obtained in nitric acid treated sample than that of untreated sample. The dye-sensitized solar cell based on the nitric acid treatment had open-circuit voltage of 0.71 V, a short-circuit current of 15.2 mAcm-2 and an energy conversion efficiency of 6.6 % under light intensity of $100\;mWcm^{-2}$. About 14 % increases in efficiency obtained when the $TiO_2$ electrode was treated by nitric acid.