• 대한전자공학회논문지SD
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• 제42권3호
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• pp.17-24
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• 2005

본 논문에서는 단일모드 광섬유를 부착한 analog용 PIN-Photodiode를 제작하고 소자의 특성을 분석하였다. 제작된 analog 용 PIN-photodiode의 대역폭은 1.5 GHz이였으며, 암전류는 20 pA이고, 정전용량은 0.48 pF이였으며, 응답도(responsivity)는 0.9 V/W 이고, 2차 상호변조(IM2, second order distortion)는 -72 dBc이였다. 본 논문에서는 응답도와 IM2 특성을 실시간으로 모니터링하며 정렬하는 새로운 광 패키징 기술을 개발하였다. 그 결과 응답도는 0.03 V/W 향상되었으며, IM2는 $3\~5dBc$ 향상 되었고, 부적합 발생률도 $3.5\%$ 감소하였다.

• 대한전자공학회논문지SD
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• 제42권7호
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• pp.1-4
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• 2005

본 논문에서는 병렬식 광 인터컨넥트 응용을 위한 멀티채널 광수신기 어레이를 구현한다. 0.8$\mu$m Si/SiGe HBT 공정을 이용하여 설계한 수신기 어레이는 4채널의 전치증폭기 (transimpedance amplifier 혹은 TIA)와 PIN 광다이오드를 포함하는데, TIA는 일반적인 에미터 접지 (common-emitter 혹은 CE) 입력단을 취한다. 측정결과로서, CE TIA 어레이는 3.9GHz 주파수 대역폭과 62dB$\Omega$ 트랜스 임피던스 이득, 7.SpA/sqrt(Hz) 평균 노이즈 전류 스펙트럼 밀도 및 -2SdB 채널 간 crosstalk 성능을 가지며, 4채널 전체 모듈이 40mW 전력소모를 보인다.

• 한국전자파학회논문지
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• 제10권1호
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• pp.54-62
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• 1999

본 논문에서는 실내 무선광연결에 사용될 수 있는 차동검출기에서 잡음광의 결합비와 차동이득비에 따른 신호대 잡음비의 개선에 대하여 분석하고 실험하였다. 차동검출기는 2개의 포토다이오드와 1개의 차동증폭기 로 이루어지며, 차동이득비가 잡음광의 결합비와 같을 때 잡음광이 소거되어 약 20 dB의 선호대잡음비를 개 선하였다. 차통검출기는 실내의 무선광연결에서 주변의 강한 잡음광의 영향을 개선하거나 인접된 채널광에 의한 혼선의 영향을 없애는 데에 매우 효과적이다. 이 방법은 선호광과 유사한 파장의 잡음광이 발생하는 경 우에도 잡음개선효과가 았다.

• 한국레이저가공학회지
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• 제7권3호
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• pp.11-24
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• 2004

In automotive industry, light weight vehicle is one of issues because of the air pollution and the protection of environment. Therefore, automotive manufacturers have tried to apply light materials such as aluminum to car body. Aluminum welding using laser has some advantages high energy density and high productivity. It is very important to understand behavior of plasma and keyhole in order to improve weld quality and monitor the weld state. In this study, spectral analysis was carried out to verify the spectrum for plasma which is generated in laser welding of A 6000 aluminum alloy. Two photodiodes which cover the range of plasma wavelength was used to measure light emission during laser welding according to assist gas flow rate and welding speed. Analysis of relationship between sensor signals of welding variables and formation of keyhole and plasma is performed. To determine the level of significance, analysis of variation (ANOVA) was carried out.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.100-103
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• 2003

Signal detection technologies such as fluorescence, charge and electrochemical detection used in the monolithic capillary electrophoresis system to convert the biochemical reaction into the electrical signal. The fluorescence detection using photodiodes that measure fluorescence emitted from eluting molecules is widely used for the monolithic capillary electrophoresis system. In this paper, in order to fabricate a photosensor has the increased sensitivity, we investigated on the sensitivity of general type and p-i-n type diode. The p-i-n diode has higher sensitivity than photodiode. Considering these results, we fabricated p-i-n diodes on the high resistive$(4k{\Omega}{\cdot}cm)$ wafer into rectangle and finger pattern and compared internal resistance of each pattern. The internal resistance of p-i-n diode can be decreased by the application of finger pattern has parallel resistance structure from $571{\Omega}$ to $393{\Omega}$.

• 전자공학회논문지A
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• 제29A권9호
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• pp.56-64
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• 1992

Because of a small bandgap energy, a high doping density, and a low operating temperature, the dark current in HgCdTe photodiode is almost composed of a tunneling current. The tunneling current is devided into an indirect tunneling current via traps and a band-to-band direct tunneling current. The indirect tunneling current dominates the dark current for a relatively high temperature and a low reverse bias and forward bias. For a low temperature and a high reverse bias the direct tunneling current dominates. In this paper, to verify the tunneling currents in HgCdTe photodiode, the new tunneling-recombination equation via trap is introduced and tunneling-recombination current is calculated. The new tunneling-recombination equation via trap have the same form as SRH (Shockley-Read-Hall) generation-recombination equation and the tunneling effect is included in recombination times in this equation. Chakrabory and Biswas's equation being introduced, band to band direct tunneling current are calculated. By using these equations, HgCdTe (mole fraction, 0.29 and 0.222) photodiodes are analyzed. Then the temperature dependence of the tunneling-recombination current via trap and band to band direct tunneling current are shown and it can be known what is dominant current according to the applied bias at athe special temperature.

• 천문학회보
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• 제37권2호
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• pp.210.1-210.1
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• 2012

We report technique used for improved measurement uncertainties for Photon detection efficiency(PDE) of $1mm^2$ single pixel SiPM. It consists of 470nm LED light source, two 2-inch integrating sphere and two NIST calibrated silicon photodiodes that have ${\pm}2.4%$ calibration error. With raytracing simulation of our experimental setup, we predict number of photon into SiPM and measurement uncertainty. For MPPC, Hamamatsu suggested PDE(1600 micro pixel) including crosstalk and afterpulse is 23.5% at 470 nm. By using new low calibration error photodiode and raytracing simulation, our simulation result has ${\pm}3%$ measurement uncertainty. The technical detail of measurement, simulation are presented with the results and implication.

• 센서학회지
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• 제22권4호
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• pp.256-261
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• 2013

This paper presents an extension of the dynamic range in a complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) using a stacked photodiode and feedback structure. The proposed APS is composed of two additional MOSFETs and stacked P+/N-well/P-sub photodiodes as compared with a conventional APS. Using the proposed technique, the sensor can improve the spectral response and dynamic range. The spectral response is improved using an additional stacked P+/N-well photodiode, and the dynamic range is increased using the feedback structure. Although the size of the pixel is slightly larger than that of a conventional three-transistor APS, control of the dynamic range is much easier than that of the conventional methods using the feedback structure. The simulation and measurement results for the proposed APS demonstrate a wide dynamic range feature. The maximum dynamic range of the proposed sensor is greater than 103 dB. The designed circuit is fabricated by the $0.35-{\mu}m$ 2-poly 4-metal standard CMOS process, and its characteristics are evaluated.

• 한국광학회지
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• 제7권2호
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• pp.101-111
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• 1996

최근들어 반도체 산업의 자동검사장비에 고배율 광학현미경이 많이 사용되고 있다. 이러한 고배율 광학현미경에 있어서 선결과제가 물체를 광학현미경에 사용된 대물렌즈의 초점심도 내에 위치시키는 초점맞춤작업이다. 본 논문에서는 광삼각법을 기본구성으로하고 수광부에 2개의 2분할소자를 사용함으로써 물체의 표면상태에 둔감하면서 물체의 초점오차량에는 매우 민감한 초점오차신호를 만들어줄 수 있는 새로운 자동초점방법을 소개하였다. 얻어진 실험결과에 의하면 이 방법의 신호분해능은 5nm이며, 반복능은 0.5.mu.m이다.

• 전자통신동향분석
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• 제34권5호
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• pp.81-90
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• 2019

The data rate for transmission through fiber-optic cables has increased to 400 Gbps in single-wavelength channels. However, speeds up to 1 Tbps are required now to meet the ever-increasing bandwidth demand driven by the diverse requirements of contemporary applications for high-quality on-demand video streaming, cloud services, various social media, and emerging 5G-enabled applications. Because the data rates of the per-channel optical interfaces depend strongly on the operational speed of the optoelectronic devices used in optical transceivers, ultrahigh-speed photonic devices and components, and eventually, chip-level transmitter and receiver technologies, are essentially required to realize futuristic optical transceivers with data rates of 1 Tbps and beyond. In this paper, we review the recent progress achieved in high-speed optoelectronic devices, such as laser diodes, optical modulators, photodiodes, and the transmitter-receiver optical subassembly for optical transceivers in data centers and in metro/long-haul transmission.