• 제목/요약/키워드: Photodiode

검색결과 532건 처리시간 0.023초

Temperature, Current, and Voltage Dependences of Junction Failure in PIN Photodiodes

  • Park, Sahng-Gi;Sim, Eun-Deok;Park, Jeong-Woo;Sim, Jae-Sik;Song, Hyun-Woo;Oh, Su-Hwan;Baek, Yong-Soon
    • ETRI Journal
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    • 제28권5호
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    • pp.555-560
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    • 2006
  • A PIN photodiode having a low dark current of 1.35 nA and a high external quantum efficiency of 95.3% fabricated for a passive optical network receiver. As the current was increased under a high voltage of 38 V and a temperature of $190^{\circ}C$, it was observed that there is a threshold current at 11 mA which induces a junction failure. Experimental data suggest that the junction failure occurs due to the crystal breaking at the end facet as a result of thermal heat or energetic carriers. This threshold behavior of junction failure is a valuable observation for the safe treatment of photodiodes. As long as the current is limited below the threshold currents, we have not observed failure events of our photodiodes.

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Plasma-MIG 하이브리드 용접에서 용적 이행모드 현상 모니터링에 대한 연구 (Study on the Welding Mode Transition Phenomena in Monitoring Plasma-MIG Hybrid Welding)

  • 이종중;박영환
    • Journal of Welding and Joining
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    • 제35권3호
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    • pp.75-81
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    • 2017
  • Recently in the welding field, the establishment of unmanned and automated systems are rapidly developing. Accurate interpretation of the welding phenomenon is applied a number of monitoring systems. In this paper, butt welding (6t) type I using Plasma-MIG welding was carried out. And we evaluated characteristics of the Al-5083 aluminium alloy in Plasma-MIG hybrid welding. Process variables including the plasma current, MIG voltage, wire feeding rate and the welding speed were used. Butt welding was conducted 1 pass. Argon gas was used as the protective gas that results from the experiment were able to achieve full penetration. In addition to monitoring the welding process occurring during MIG welding current, welding votage and Plasma current, voltage were collected in real time, the photodiode and CCD cameras observing the phenomenon that the welding is in progress were measured using a quantity of light.

파노라믹 스캔 라이다용 1-Gb/s 리드아웃 증폭기 어레이 (1-Gb/s Readout Amplifier Array for Panoramic Scan LADAR Systems)

  • 김다영;박성민
    • 전기학회논문지
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    • 제65권3호
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    • pp.452-456
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    • 2016
  • In this paper, a dual-channel readout amplifier array is realized in a standard $0.18{\mu}m$ CMOS technology for the applications of panoramic scan LADAR systems. Each channel consists of a PIN photodiode with 0.9 A/W responsivity and a 1.0 Gb/s readout amplifier(ROA). The proposed ROA shares the basic configuration of the previously reported feedforward TIA, except that it exploits a replica input to exclude a low pass filter(LPF), thus reducing chip area and improving integration level, and to efficiently reject common-mode noises. Measured results demonstrate that each channel achieves $70dB{\Omega}$ transimpedance gain, 829 MHz bandwidth, -22 dBm sensitivity for $10^{-9}BER$, -34 dB crosstalk between adjacent channels, and 45 mW power dissipation from a single 1.8 V supply.

색소레이저 펌핑을 위한 HCP의 개발 (Development of HCP Device for Dye Laser Pumping Source)

  • 오철한;박덕규;이성만
    • 대한전기학회논문지
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    • 제35권9호
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    • pp.375-379
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    • 1986
  • The HCP(Hypocycloidal Pinch) device for plasma focus was modified for a pumping source of the dye laser, and the spectral distribution and time behavior of its light pulses were investigated by using a UV spectrometer, 70 MHz CRO and Si-PIN photodiode detector. An array of multiple stages of HCP and narrower electrode gaps were chosen in order to make a more uniform discharge along the HCP axis. The possible spectral range for the pumping of dye laser is 360-620nm, when the HCP is operated at 5-8kv of apllied voltage and 50-150Torr of Ar fill gas pressure. The rise-time and FWHM of light pulses from the HCP are 5us and 30-50us respectively when it is operated under the same conditions as above.

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레이저를 이용한 인공망막에서의 영상 신호 전달방법 (Image Signal Transfer Method in Artificial Retina using Laser)

  • 윤일용;이병호;김성준
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제51권5호
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    • pp.222-227
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    • 2002
  • Recently, the research on artificial retina for the blind is active. In this paper a new optical link method for the retinal prosthesis is proposed. Laser diode system was chosen to transfer image into the eye in this project and the new optical system was designed and evaluated. The use of laser diode array in artificial retina system makes system simple for lack of signal processing part inside of the eyeball. Designed optical system is enough to focus laser diode array on photodiode array in 20$\times$20 application.

집적화된 Lab-On-a Chip을 위한 광센서의 제작 및 특성 평가 (Development of Photo-sensor for Integrated Lab-On-a-Chip)

  • 김주환;신경식;김용국;김태송;김상식;주병권
    • 한국전기전자재료학회논문지
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    • 제17권4호
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    • pp.404-409
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    • 2004
  • We fabricated photo-sensor for fluorescence detection in LOC. LOC is high throughput screening system. Our LOC screens biochemical reaction of protein using the immunoassay, and converts biochemical reaction into electrical signal using LIF(Laser Induced Fluorescence) detection method. Protein is labeled with rhodamine intercalating dye and finger PIN photodiode is used as photo-sensor We measured fluorescence emission of rhodamine dye and analyzed tendency of fluorescence detection, according to photo-sensor size, light intensity, and rhodamine concentration. Detection current was almost linearly proportional to two parameters, intensity and concentration, and was inversely proportional to photo-sensor size. Integrated LOC consists of optical-filter deposited photo-sensor and PDMS microchannel detected 50 (pg/${mu}ell$) rhodamine. For integrated LOC including light source, we used green LED as the light source and measured emitted fluorescence.

Speckle Defect by Dark Leakage Current in Nitride Stringer at the Edge of Shallow Trench Isolation for CMOS Image Sensors

  • Jeong, Woo-Yang;Yi, Keun-Man
    • Transactions on Electrical and Electronic Materials
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    • 제10권6호
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    • pp.189-192
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    • 2009
  • The leakage current in a CMOS image sensor (CIS) can have various origins. Leakage current investigations have focused on such things as cobalt-salicide, source and drain scheme, and shallow trench isolation (STI) profile. However, there have been few papers examining the effects on leakage current of nitride stringers that are formed by gate sidewall etching. So this study reports the results of a series of experiments on the effects of a nitride stringer on real display images. Different step heights were fabricated during a STI chemical mechanical polishing process to form different nitride stringer sizes, arsenic and boron were implanted in each fabricated photodiode, and the doping density profiles were analyzed. Electrons that moved onto the silicon surface caused the dark leakage current, which in turn brought up the speckle defect on the display image in the CIS.

토너입자형 디스플레이의 응답특성에 관한 연구 (A Study on Response Time Characteristics of Toner Particle Type Display)

  • 김인호;김영조
    • 한국전기전자재료학회논문지
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    • 제22권1호
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    • pp.93-97
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    • 2009
  • We analyzed voltage characteristics of toner particle type display according to particle layers and cell gap between two electrodes and ascertained the aging effects by measuring the response time of particles with and without aging process. The threshold/driving/breakdown voltage is proportional to layers of toner particles and cell gap and the response time at driving voltage is faster than that of threshold and breakdown voltage because of different q/m of color and black particles. The analysis of response time is a method of estimation of optical characteristics, driving voltage and particle lumping and these results are promoted by aging process. We use the laser and photodiode to measure response time and optical properties. It has not been studied and reported to analyze the relationship of response time, threshold/driving/breakdown voltage, lumping phenomena, cell gap, and aging process for toner particle type display.

고속 광통신용 GaInAs/InP PIN 수광소자 모듈 제작

  • 박찬용;박경현;이창원;이용탁
    • ETRI Journal
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    • 제13권4호
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    • pp.52-57
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    • 1991
  • We fabricated very high. speed PIN Photodiode module for the application of high speed optical receiver. OMVPE was used for the growth of InP layer on InGaAs absorption layer. The structure was the combination of mesa and planartype. Fabrication procedure was more complicated than simple mesa or simple planar type structure because we used semiinsulating InP substrate in order to reduce stray capacitance. The results at-5V were as follows : dark current was less than 1nA, capacitance was 0.55pF, and cutoff frequency was above 3GHz, and rise and fall time was about 100ps.

한방용 용적맥파 시스템 (Volume Pulse Wave Detection System for Oriental Medicine)

  • 김형태;한순천;최태종;김정국;허웅;박영배
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2001년도 하계종합학술대회 논문집(5)
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    • pp.77-80
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    • 2001
  • In this paper, we devised volume pulse detection system which can quantitatively represent a artery elasticity for oriental clinic. Volume pulse wave detecter system consist of transducer which has IRLED-photodiode detecter, temperature sensor and filter and preprocessing circuits, data conversion and serial communication parts, and computer system. The high-pass filter are detect volume pulse wave and lowpass filter detect tissue thickness. The detected volume pulse wave are normalized by tissue thickness value with a division process. As the result of experiment, we can detect normalized volume pulse wave with effectively.

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