• Title/Summary/Keyword: Photoconductor layer

Search Result 38, Processing Time 0.021 seconds

Structural Design of Digital Radiography Detector using Hybrid Method for the Improvement of Response Property by X-ray (X-ray 반응 특성 개선을 위한 Hybrid형 디지털 방사선 검출기의 구조 설계)

  • Kim, Kyo-Tae;Han, Moo-Jae;Kim, Jin-Seon;Heo, Ye-Ji;Oh, Kyung-Min;Park, Ji-Koon;Nam, Sang-Hee
    • Journal of the Korean Society of Radiology
    • /
    • v.9 no.6
    • /
    • pp.363-367
    • /
    • 2015
  • Digital radiography is divided into the direct method using photoconductor and indirect method using phosphor based on the principles in acquiring the image information, but both have different advantages and disadvantages. Therefore, this study conducted a preliminary research on the structure of the hybrid detector that combined phosphor and photoconductor to improve the sensitivity of X-ray. As a result, when the tube voltage was adjusted at 30ms of exposure time, the direct structure displayed an overall excellent sensitivity, but at the exposure time of 50ms or more, the hybrid structure displayed a better outcome. This seems to have enough research value considering that various clinical examinations usually include 50ms or more exposure time.

Effect of Polymer on the Photosensitive properties of organic Photoconductor (유기감광체의 감광특성에 미치는 고분자의 영향에 관한 연구)

  • 문명준;김명숙;이상남;민성기;김은경
    • Journal of the Korean Graphic Arts Communication Society
    • /
    • v.16 no.3
    • /
    • pp.43-60
    • /
    • 1998
  • The photosensitive properties and spectroscopic characteristics in the organic photoconductor(OPC) with carrier generation layer(CGL) of poly(vinylbutyral)(PVB) and polycarbonate(PC) doped with titanyl phthalocyanine(TiOPc) were investigated. The change of crystal structure of TiOPc dispersed with PVB and PC was shown by UV-visible reflective spectrum and FT-IR spectrum and mainly caused by the difference of solubility of solvent and the interaction between TiOPc and binder. The particle size of TiOPc dispersed with PVB measured by SEM was smaller than in PC. The crystal structure of TiOPc dispersed with PVB was amorphous type and in PC was $\alpha$type. It was found that the photosensitive properties of OPC were dependent on the change of absorbance and ionization potential of TiOPc occurred from the difference of crystal structure. In this work, the photosensitivity of OPC of TiOPc dispersed with PVB was better than PC due to the crystal type and the smaller particle size.

  • PDF

Simple Algorithm of Structure Features Extration for Stereo Image Matching (스테레오 영상 정합을 위한 새로운 구조 정보 추출 알고리즘)

  • 최환언
    • Journal of the Korean Graphic Arts Communication Society
    • /
    • v.9 no.1
    • /
    • pp.1-11
    • /
    • 1991
  • In this reseach, double-layered photoconductor consist of the carrier generation layer(CGL) of $\varepsilon$ type copper phthalocyanine thin film by an aqueous coating method and the carrier transport layer(CGL) of polyvinyl carbazol(PVK) by spin coating. We inverstigated effect of the surfactant solution and cathod electrolysis to the crystal type of $\varepsilon$-CuPc in CGL with TEM, SEM and X- ray diffraction spectroscopy and studied the mechanism of an aqueous coating for the preparation of CGL. The effect of the washing of CGL about the electrophotographic characteristics of the $\varepsilon$-CuPc/PVK doublelayered photoconductors is studied also.

  • PDF

Opto-electrical properties for a HgCdTe epilayers grown by hot wall epitaxy (Hot wall epitaxy에 의해 성장된 HgCdTe 에피레이어의 광전기적특성)

  • 홍광준
    • Proceedings of the Materials Research Society of Korea Conference
    • /
    • 2003.11a
    • /
    • pp.152-152
    • /
    • 2003
  • Hg$\sub$l-x/Cd$\sub$x/Te (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of 590$^{\circ}C$ for 15 min. When the thickness of the CdTe buffer layer was 5 $\mu\textrm{m}$ or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111) /GaAs substrate at various temperatures in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment The photoconductor characterization for the epilayers was also measured The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out

  • PDF

Printability of an Aqueous Gravure Ink for Polyolefin (Polyolefin용 수성 Gravure Ink의 인쇄작성)

  • 김종원
    • Journal of the Korean Graphic Arts Communication Society
    • /
    • v.12 no.1
    • /
    • pp.1.1-11
    • /
    • 1994
  • The photosensitive properties and carrier transport in the organic photoconductor with the carrier transport layers(CTL) of polymer matrix doped with two carrier transport materials above carrier generation layer(CGL) containing oxotitanium phthalocyanine (TiOPc) were investigated. The CGL of TiOPc dispersed in poly(vinylbutyral) was formed as thickness of 0.1${\mu}{\textrm}{m}$and the carrier transport layer was prepared by coating polycarbonate and polyester doped with oxadiazoly(OXD), polyvinylcarbazole (PVK), trinitro fluorenone(TNF) as thickness of 10~15${\mu}{\textrm}{m}$, respectively. We have measured half decay exposure,sensitivity and xerographic gain from the photo-induced discharge curve(PIDC). In this work, it was found that the characteristics of carrier transport were mainly caused by the ionization potential difference of constitutive materials in molecularly doped polymer.

  • PDF

A Tone Correction Halftone Method Based on Response Characteristic of Digital Printer (디지털 프린터의 출려특성기반 톤 보정 망점화)

  • 신지현
    • Journal of the Korean Graphic Arts Communication Society
    • /
    • v.15 no.1
    • /
    • pp.71-83
    • /
    • 1997
  • In recent years, various kinds of organic photoreceptors have been used for copy machines based on electrophotography. Most of them are constructed into layered devices in which a photogeneration layer is separated from a charge transport layer. They are usually used with application of negative charges. Organic pigment have received considerable attention with phthalocyanine, squaraine, and azo compounds being used to construct zerograpgic photoreceptors with enhanced long wavelength sensitivity, residual potential and zerograpgic gain of squaraine photoconductor were measured from the photoinduced discharge curve. Most of synthesized squaraine derivative couldn`t use for CGM(charge generation material), but it knew that a part of one was able to use it within the possibility. A few appliance is used it know about dependence on CTM(charge transport material) of squaraine derivative. It could know that experiment`s result is 2.5-bis(4-N-N`-diethylaminophenyl)-1,3,4-oxadiazole(OXD) is the bestproduct.

  • PDF

Comparison of the I-V Characteristic as Various Composition ratio of Iodine in a-Se of $BrO_2/a-Se$ based Radiation Conversion Sensor ($BrO_2/a-Se$ 구조의 방사선 변환센서에서 a-Se에 첨가된 조성비 변화에 따른 I-V 특성 비교)

  • Choi, Jang-Yong;Park, Ji-Koon;Gong, Hyun-Gi;Ahn, Sang-Ho;Nam, Sang-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2002.11a
    • /
    • pp.440-443
    • /
    • 2002
  • Present1y the X-Ray diagnosis system is a real condition that is changing by digital ways in it's existent analog ways. This digital radiation detector is divided by the direct method and the indirect method. The indirect method of applied voltage has special qualities that the resolution is low than direct method by diffusion effect that happens. The conversion process ( radiation${\rightarrow}$visible ray${\rightarrow}$electrical signal of two times, has shortcomings that the energy conversion efficiency of electrical signal is low. The direct method has shortcomings that need strong electric fie1d to detect electrical signal efficiently. This research achieved to develop digital detector of the Hybrid method that have form that mixes two ways to supplement shortcoming of direct. indirect method. A studied electrical characteristic by Iodine's Mixture ratio change is added to selenium in the detector which has a multi-layer structure (Oxybromide + a-Se). There are 8 kinds of Manufactured compositions to amorphous selenium Iodine each 30ppm, 100ppm, 200 ppm, 300ppm, 400ppm, 500ppm, 600ppm, 700ppm by a doped photoconductor through a vacuum thermal evaporation method. The phosphor layer is consisted of Oxybromide ($BrO_2$) which uses optical adhesives multi-layer structure. The manufactured compositions calculates and compares Net Charge and signal to noise ratio measuring Photocurrent about Darkcurrent and X-ray. When doped Iodine Mixture ratio is 500ppm to the multi-layer structure (Oxybromide + a-Se), applied voltage of $3V/{\mu}m$, leakage current of compositions $2.61nA/cm^2$ and net charge value by 764pC/$cm^2$/mR then the best result appeared.

  • PDF

Properties of Infrared Detector and Growth for HgCdTe Epilayers

  • Hong, Kwang-Joon;You, Sang-Ha
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2003.11a
    • /
    • pp.116-119
    • /
    • 2003
  • [ $Hg_{1-x}Cd_xTe$ ] (MCT) was grown by hot wall epitaxy method. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of 590 C for 15 min. When the thickness of the CdTe buffer layer was 5 m or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111) /GaAs substrate at various temperature in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment. The photoconductor characterization for the epilayers was also measured. The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out.

  • PDF

X-ray Sensitivity of Hybrid-type Sensor based on CaWO4-Selenium for Digital X-ray Imager

  • Park, Ji-Koon;Park, Jang-Yong;Kang, Sang-Sik;Lee, Dong-Gil;Kim, Jae-Hyung;Nam, Sang-Hee
    • Transactions on Electrical and Electronic Materials
    • /
    • v.5 no.4
    • /
    • pp.133-137
    • /
    • 2004
  • The development of digital x-ray detector has been extensively progressed for the application of various medical modalities. In this study, we introduce a new hybrid-type x-ray detector to improve problems of a conventional direct or indirect digital x-ray image technology, which composed of multi-layer structure using a CaWO$_4$ phosphor and amorphous selenium (a-Se) photoconductor. The leakage current of our detector was found to be ∼180 pA/cm$^2$ at 10 V/m, which was significantly reduced than that of a single a-Se detector. The x-ray sensitivity was measured as the value of 4230 pC/cm$^2$/mR at 10 V/m. We found that the parylene thin film between a CaWO$_4$ phosphor and an a-Se layer acts as an insulator to prevent charge injection from indium thin oxide (ITO) electrode into an a-Se layer under applied bias.

The Study on Composition ratio of Iodine in Hybrid X-ray Sensor (혼합형 X선 센서에서 a-Se 의 Iodine 첨가비 연구)

  • Gong, Hyung-Gi;Park, Ji-Koon;Choi, Jang-Yong;Moon, Chi-Wung;Nam, Sang-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2002.11a
    • /
    • pp.366-369
    • /
    • 2002
  • At present, the study of direct digital X-ray detector and indirect digital X-ray detector proceed actively. But it needs high thickness and high voltage in selenium for high ionization rate. Therefore, we carried out the study of electric characteristics of a-Se with additive ratio of Iodine in drafting study for developing Hybrid X -ray Sensor for complementing direct digital X -ray detector and indirect digital X-ray detector in this paper. On this, there are formed Amorphous selenium multi-layers by sticking phosphor layer$(Gd_{2}O_{2}S(Eu^{2+}))$ using optical adhesives of EFIRON Co. Amorphous selenium multi-layers having dielectric layer(parylene) has characteristics of low dark-current, high X-ray sensitivity. So we can acquired a enhanced signal to noise ratio. We make Amorphous selenium multi-layers with $30{\mu}m$ thickness on glass.

  • PDF