• Journal of the Korean Vacuum Society
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• v.2 no.1
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• pp.73-77
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• 1993

Hot-wall evaporation technique으로 세라믹 기판 위에 CdS 박막을 성장하였다. 이 때 증발원과 기판의 온도는 각각 570, 40$0^{\circ}C$이고 두께는 3$mu extrm{m}$이었다. 공기 중에서 열처리하여 감도(${\gamma}$), 광전류와 암전류의 비(pc/dc), 최대허용소비전력(MAPD), spectral response 및 응답시간 등을 측정하였다. $550^{\circ}C$, 30분간 열처리한 경우 가장 좋은 광전도 특성을 얻었으며 ${\gamma}$=0.89, pc/cd~104, MAPD: 492mW, rise time이 100ms, decay time이 260ms이었다.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.2
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• pp.1-10
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• 2020

The technology and market size of image sensors continue to develop thanks to the release of image sensors that exceed 100 million pixels in 2019 and expansion of black box camera markets for vehicles in addition to existing mobile applications. We review the technology flow of image sensors that have been constantly evolving for 40 years since Hitachi launched a 200,000-pixel image sensor in 1979. Although CCD has made inroads into image sensor market for a while based on good picture quality, CMOS image sensor (CIS) with active pixels has made inroads into the market as semiconductor technology continues to develop, since the electrons generated by the incident light are converted to the electric signals in the pixel, and the power consumption is low. CIS image sensors with superior characteristics such as high resolution, high sensitivity, low power consumption, low noise and vivid color continue to be released as the new technologies are incorporated. At present, new types of structures such as Backside Illumination and Isolation Cell have been adopted, with better sensitivity and high S/N ratio. In the future, new photoconductive materials are expected to be adopted as a light absorption part in place of the pn junction.

• Journal of the Korean Institute of Telematics and Electronics
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• v.12 no.5
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• pp.1-5
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• 1975

접합형 트린지스터와 발광다이오드(LED) 및 광도전소자(CdS)로서 구성된 광결합 전류안정부저항회로를 진안하였다. 이는 일반적으로 광트랜지스터보다도 더 예민한 것을 이용하여, CdS와 LED를 밀착 시켜서 LED에 흐르는 전류와 CdS의 실효저항변화로써 결합된 광결합방식을 택하였다. 트랜지스터의 콜랙터-에미터간에 인위적인 누변저항을 삽입하는 방법을 도입함으로써 부저항치 및 최대입력단자전압치를 임의로 변화할 수 있게 하였으며, 제안한 회로를 분석하고 또 이를 실험적으로 확인하였다. 누변저항을 1KΩ에서 30KΩ까지 변화시켰을 때 최대입력단자전압은 1.65V에서 4.22V로 변하였고, 부저항치는 -1.0KΩ에서 -10.0KΩ까지 변하였다. 또 실험치에 대한 계산치에의 상대백분최대오차가 11%이었다. A current stable negative resistance circuit has been constucted with combination of coulplementary symmetrical transistors, a light emitting diode and a photoconductive cell. The negative resistance(Rn) and break-over voltage(VBo) can be set at a designed value according to adjustment of the artificial leakage resistance of p-n-p transistor. The RN and VBo calculated in this designed circuit are checked though the experiments, the errors are found less than 11%.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.357-357
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• 2012

The doping process of the solar cell has been used by furnace or laser. But these equipment are so expensive as well as those need high maintenance costs and production costs. The atmospheric pressure plasma doping process can enable to the cost reduction. Moreover the atmospheric pressure plasma can do the selective doping, this means is that the atmospheric pressure plasma regulates the junction depth and doping concentration. In this study, we analysis the atmospheric pressure plasma doping compared to the conventional furnace doping. the single crystal silicon wafer doped with dopant forms a P-N junction by using the atmospheric pressure plasma. We use a P type wafer and it is doped by controlling the plasma process time and concentration of dopant and plasma intensity. We measure the wafer's doping concentration and depth by using Secondary Ion Mass Spectrometry (SIMS), and we use the Hall measurement because of investigating the carrier concentration and sheet resistance. We also analysis the composed element of the surface structure by using X-ray photoelectron spectroscopy (XPS), and we confirm the structure of the doped section by using Scanning electron microscope (SEM), we also generally grasp the carrier life time through using microwave detected photoconductive decay (u-PCD). As the result of experiment, we confirm that the electrical character of the atmospheric pressure plasma doping is similar with the electrical character of the conventional furnace doping.

• Journal of the Korean Society of Radiology
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• v.11 no.6
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• pp.525-529
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• 2017

As a photoconductive material with a high X-ray sensitivity, many researches about mercury iodide has been carried out to substitute for amorphous selenium. However, it has many limitations in commercialization because of the high leakage current. In this study, we fabricated $HgI_2$ unit-cells with mixed silicon oxide($SiO_2$) and titanium oxide($TiO_2$) to reduce a high leakage current and we evaluated an electrical properties of the fabricated unit-cells. As a result, we confirmed that both mixtures were effective in reduing the leakage current of the $HgI_2$ and x-ray sensitivity were significantly increased in fabricated $HgI_2-TiO_2$ unit-cell.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.17 no.1
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• pp.58-67
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• 1992

Optical absorption and photoluminescences(PL) of MgGa2Se4 and MgGa2Se4 : Co2+ single crustals were guown by the Bridgman method have been investigated in the visible and near-in frared regions. The optical absorption spectrum showed three absorption peak at 760 nm(13158nm, -1, 1.63eV), 1640nm(6097cm-1, 0.75eV).and 2500nm(4000cm-1,0.49eV) which are assigned the electronic transitions between the ground state and excited states of Co2+ ions with Td sym-metry in MgGa2Se4 host lattice. In PL spectrum the visible emission bands as well as the infrared emission band in these single cuystals are obserned. The visible emission bands are explained due to the radiative transitions of electrons from quasi continusly distributed tarps below the bottom of the conduction band to acceptor levels above the top of the valence band in the proposed energy level scheme. At the same time, it is considered that the infrated emission bands are attributed to electron transitions from the deep levels to the acceptor levels. The mechanism of the optical transition os well explained in terms of the energy diagram of MgGa2Se4.

• Journal of the Korean Society of Radiology
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• v.13 no.1
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• pp.119-124
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• 2019

Radiation therapy using flattening filter free beam can prevent beam attenuation caused by flattening filter and can improve treatment efficiency. However, accurate dose control is not established for nonuniform iso dose distributions. In this study, curved dosimeter based on photoconductive material $HgI_2$ was fabricated and its reproducibility and linearity were evaluated at 6 MV photon energy to verify its performance. In order to show the usefulness of the curved measurement, the signals measured on the flat substrate and the curved substrate were compared in the flattening filter free beam using the acrylic filter. As a result, the reproducibility of the unit cell dosimeter was evaluated as SE 0.613%, and the linearity was evaluated as R-sq 0.9999. The usability evaluation of the array curve dosimeter demonstrated its usefulness by indicating a curvature error rate of 11.073%p and a reduced error rate.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.229-236
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• 2014

A stoichiometric mixture of evaporating materials for $MnAl_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MnAl_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MnAl_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.7920eV-5.2729{\times}10^{-4}eV/K)T^2/(T+786 K)$. In order to explore the applicability as a photoconductive cell, we measured the sensitivity (${\gamma}$), the ratio of photocurrent to dark current (pc/dc), maximum allowable power dissipation (MAPD) and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in S vapour compare with in Mn, Al, air and vacuum vapour. Then we obtained the sensitivity of 0.93, the value of pc/dc of $1.10{\times}10^7$, the MAPD of 316 mW, and the rise and decay time of 14.8 ms and 12.1 ms, respectively.

• Journal of Sensor Science and Technology
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• v.6 no.4
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• pp.328-336
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• 1997

The CdSe thin films were grown on the Si(100) wafers by a hot wall epitaxy method (HWE). The source and substrate temperature are $600^{\circ}C$ and $430^{\circ}C$ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the temperature range 30K to 150K by impurity scattering and decreased in the temperature range 150k to 293k by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity(${\gamma}$), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of $1.39{\times}10^{7}$, the MAPD of 335mW, and the rise and decay time of 10ms and 9.5ms, respectively.