• Title/Summary/Keyword: Photochemical etching

Search Result 14, Processing Time 0.022 seconds

Direct-Patternable SnO2 Thin Films Incorporated with Conducting Nanostructure Materials (직접패턴형 SnO2 박막의 전도성 나노구조체 첨가연구)

  • Kim, Hyun-Cheol;Park, Hyung-Ho
    • Korean Journal of Materials Research
    • /
    • v.20 no.10
    • /
    • pp.513-517
    • /
    • 2010
  • There have been many efforts to modify and improve the properties of functional thin films by hybridization with nano-sized materials. For the fabrication of electronic circuits, micro-patterning is a commonly used process. For photochemical metal-organic deposition, photoresist and dry etching are not necessary for microscale patterning. We obtained direct-patternable $SnO_2$ thin films using a photosensitive solution containing Ag nanoparticles and/or multi-wall carbon nanotubes (MWNTs). The optical transmittance of direct-patternable $SnO_2$ thin films decreased with introduction of nanomaterials due to optical absorption and optical scattering by Ag nanoparticles and MWNTs, respectively. The crystallinity of the $SnO_2$ thin films was not much affected by an incorporation of Ag nanoparticles and MWNTs. In the case of mixed incorporation with Ag nanoparticles and MWNTs, the sheet resistance of $SnO_2$ thin films decreased relative to incorporation of either single component. Valence band spectral analyses of the nano-hybridized $SnO_2$ thin films showed a relation between band structural change and electrical resistance. Direct-patterning of $SnO_2$ hybrid films with a line-width of 30 ${\mu}m$ was successfully performed without photoresist or dry etching. These results suggest that a micro-patterned system can be simply fabricated, and the electrical properties of $SnO_2$ films can be improved by incorporating Ag nanoparticles and MWNTs.

Study of metal dopants and/or Ag nanoparticles incorporated direct-patternable ZnO film by photochemical solution deposition

  • Kim, Hyun-Cheol;Reddy, A.Sivasankar;Park, Hyung-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2007.11a
    • /
    • pp.368-368
    • /
    • 2007
  • Zinc oxide (ZnO) has drawn much interest as a potential transparent conducting oxide (TCO) for applying to solar cell and front electrode of electro-luminescent devices. For the enhancement of electrical property of TCOs, dopant introduction and hybridization with conductive nanoparticles have been investigated. In this work, ZnO films were formed on glass substrate by using photochemical solution deposition of Ag nanoparticles dispersed or various metal (Ag, Cd, In, or Sn) contained photosensitive ZnO solutions. The usage of photosensitive solution permits us to obtain a micron-sized direct patterning of ZnO film without using conventional dry etching procedure. The structural, optical, and electrical characteristics of ZnO films with the introduction of metal dopants with/without Ag nanoparticles have been investigated to check whether there is a combined effect between metal dopants and Ag nanoparticles on the characteristics of ZnO film. The phase formation and crystallinity of ZnO film were monitored with X-ray diffractometer. The optical transmittance measurement was carried out using UV-VIS-NIR spectrometer and the electrical properties such as sheet resistance and conductivity were observed by using four-point probe.

  • PDF

Resistive Switching Characteristic of Direct-patternable Amorphous TiOx Film by Photochemical Metal-organic Deposition (광화학증착법에 의한 직접패턴 비정질 TiOx 박막의 제조 및 저항변화 특성)

  • Hwang, Yun-Kyeong;Lee, Woo-Young;Lee, Se-Jin;Lee, Hong-Sub
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.27 no.1
    • /
    • pp.25-29
    • /
    • 2020
  • This study demonstrates direct-patternable amorphous TiOx resistive switching (RS) device and the fabrication method using photochemical metal-organic deposition (PMOD). For making photosensitive stock solutions, Ti(IV) 2-ethylhexanoate was used as starting precursor. Photochemical reaction by UV exposure was observed and analyzed by Fourier transform infrared spectroscopy and the reaction was completed within 10 minutes. Uniformly formed 20 nm thick amorphous TiOx film was confirmed by atomic force microscopy. Amorphous TiOx RS device, formed as 6 × 6 ㎛ square on 4 ㎛ width electrode, showed forming-less RS behavior in ±4 V and on/off ratio ≈ 20 at 0.1 V. This result shows PMOD process could be applied for low temperature processed ReRAM device and/or low cost, flexible memory device.

Synthesis of direct-patternable ZnO film incorporating Pt Nanoparticles

  • Choi, Yong-June;Park, Hyeong-Ho;Reddy, A.Sivasankar;Park, Hyung-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2007.11a
    • /
    • pp.369-369
    • /
    • 2007
  • ZnO film has been investigated during several decades because it has excellent optical property like a transmittance among the range of visible light for using transparent conducting oxide (TCO) films. But ZnO film has not enough conductivity for applying to TCO devices. Therefore we synthesized platinum nanoparticles and they incorporated into ZnO due to improve the electrical property of ZnO film by sol-gel synthesis method. Also, we fabricated photosensitive ZnO thin film containing Pt nanoparticles by sol-gel process and spin-coating for using photochemical solution deposition. Photosensitive ZnO film could carry out the direct-pattern which allow the etching process to be convenient. The optical and electrical properties of ZnO film with or without various atomic percent of Pt nanoparticles annealed at various temperatures were investigated by using UV-Vis spectroscopy and 4-point probe method, respectively. We characterized the ZnO thin film containing Pt nanoparticles using X-ray diffraction, scanning electron microscopy, and X-ray photoelectron spectroscopy.

  • PDF