• Title/Summary/Keyword: Photoanode

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A Study on Formation of Vertically Aligned ZnO Nanorods Arrays on a Rough FTO Transparent Electrode by the Introduction of TiO2 Crystalline Nano-sol Blocking Interlayer (결정성 이산화티탄 나노졸 블록킹층 도입을 통한 거친 표면을 가지는 FTO 투명전극기판 위 수직 배향된 산화아연 나노막대 형성에 관한 연구)

  • Heo, Jin Hyuck;You, Myung Sang;Im, Sang Hyuk
    • Korean Chemical Engineering Research
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    • v.51 no.6
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    • pp.774-779
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    • 2013
  • We synthesized the solution processible monodispersed $TiO_2$ crystalline nano-sol with ~ 5 nm in size by sol-gel method. Through the spin-coating of crystalline $TiO_2$ nano-sol at low processing temperature, we could make even blocking interlayer on the rough FTO transparent electrode substrate. The rough FTO surface could be gradually smoothed by the spin-coating of nano-crystalline $TiO_2$ sol based blocking interlayer. The 1, 2.5, 5, and 10 wt% of nanocrystalline $TiO_2$ sol formed 29, 38, 62, and 226 nm-thick of blocking interlayer in present experimental condition, respectively. The 5 and 10 wt% of $TiO_2$ nano-sol could effectively fill up the valley part of bare FTO with 48.7 nm of rms (root mean square) roughness and consequently enabled the ZnO to be grown to vertically aligned one dimensional nanorods on the flattened blocking interlayer/FTO substrate.

Photoelectrochemical Properties of Gallium Nitride (GaN) Photoelectrode Using Cobalt-phosphate (Co-pi) as Oxygen Evolution Catalyst (산소발생용 Cobalt-phosphate (Co-pi) 촉매를 이용한 Gallium Nitride (GaN) 광전극의 광전기화학적 특성)

  • Seong, Chaewon;Bae, Hyojung;Burungale, Vishal Vilas;Ha, Jun-Seok
    • Journal of the Microelectronics and Packaging Society
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    • v.27 no.2
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    • pp.33-38
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    • 2020
  • In the photoelectrochemical (PEC) water splitting, GaN is one of the most promising photoanode materials due to high stability in electrolytes and adjustable energy band position. However, the application of GaN is limited because of low efficiency. To improve solar to hydrogen conversion efficiency, we introduce a Cobalt Phosphate (Co-pi) catalyst by photo-electrodeposition. The Co-pi deposition GaN were characterized by SEM, EDS, and XPS, respectively, which illustrated that Co-pi was successfully decorated on the surface of GaN. PEC measurement showed that photocurrent density of GaN was 0.5 mA/㎠ and that of Co-pi deposited GaN was 0.75 mA/㎠. Impedance and Mott-Schottky measurements were performed, and as a result of the measurement, polarization resistance (Rp) and increased donor concentration (ND) values decreased from 50.35 Ω to 34.16 Ω were confirmed. As a result of analyzing the surface components before and after the water decomposition, it was confirmed that the Co-pi catalyst is stable because Co-pi remains even after the water decomposition. Through this, it was confirmed that Co-pi is effective as a catalyst for improving GaN efficiency, and when applied as a catalyst to other photoelectrodes, it is considered that the efficiency of the PEC system can be improved.