• Bulletin of the Korean Chemical Society
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• v.32 no.spc8
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• pp.3031-3038
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• 2011

Ion-coordinating ruthenium complexes [cis-Ru(dcbpy)(L)(NCS)$_2$, where dcbpy is 4,4'-dicarboxylic acid-2,2'-bipyridine and L is 1,4,7,10-tetraoxa-13-azacyclopentadecane, JK-121, or bis(2-(2-methoxy-ethoxy)ethyl) amine, JK-122] have been synthesized and characterized using $^1H$ NMR, Fourier transform IR, UV/vis spectroscopy, and cyclic voltammetry. The effect of $Li^+$ in the electrolyte on the photovoltaic performance was investigated. With the stepwise addition of $Li^+$ to a liquid electrolyte, the device shows significant increase in the photo-current density, but a small decrease in the open circuit voltage. The solar cell with a hole conductor, the addition of $Li^+$ resulted in a 30% improvement in efficiency. The JK-121 sensitized cells in the liquid and solid-state electrolyte give power conversion efficiencies of 6.95% and 2.59%, respectively, under the simulated sunlight.

• The Korean Journal of Ceramics
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• v.3 no.2
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• pp.88-91
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• 1997

The diamondlike (DLC) films were deposited by RF plasma CVD system which had cathode consisting of mesh sheet, for the purpose of a protection from wear of OPC surface of the electrophotographic photosensitive body. Material charateristics and tribological properties of the films were also investigated and finally copying performance was evaluated with DLC deposited OPC samples. The surface resistance of the DLC film unaffected by the surface potential of the OPC was about $10^{11}{\Omega}$ and its hardness was about 1200 kg/$\textrm{mm}^2$. In this case the film showed typical material strcture of dimondlike hydrocarbon. The friction coefficient of the film was lowered to 0.2~0.3 at the optimum condition in this investigation and their wear resistant was inproved by DLC-deposition on the OPC surface. DLC-deposited OPC samples with a good copying performance without image flow and draft could be obtained at some depositing conditions.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1824-1827
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• 2003

The sheet metal shearing process is normally used in the precision elements such as semi-conductor components. In precision elements, burrs usually reduce the quality of machined parts and cause interference, jamming and misalignment during assembly procedures and because of their sharpness, they can be safety hazard to personnel. Furthermore, not only burrs are hard to predict and avoid, but also deburring, the process of removing burrs, is time-consuming and costly. In order to get the burr-free parts, therefore, we developed the precise burr measuring system using the laser. The laser burr measuring system consists of the laser probe, the photo detector, the achromatic doublet lens, and the rotary ＆ the X-Y table. In previous reports, we used simple vertical measuring method. But, as we used relatively bigger laser spot diameter and had the limited reflection angle, it was difficult to obtain the precise measuring results. So called, the spot size effect makes the profile of burr measured distorted and the burr height measured smaller. By introducing the novel laser measuring method which employing the achromatic lens system and the tilting mechanism, we could make the spot size smaller and get the appropriate beam direction angle. Through the experiments, the accuracy of the developed system is proved. The burr height measured during the punching process can be used for automatic deburring and in-situ aligning.

• Journal of information and communication convergence engineering
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• v.5 no.1
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• pp.42-44
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• 2007

The a-Si:H TFTs decreasing parasitic capacitance of source-drain is fabricated on glass. The structure of a-Si:H TFTs is inverted staggered. The gate electrode is formed by patterning with length of $8{\mu}m{\sim}16{\mu}m$ and width of $80{\sim}200{\mu}m$ after depositing with gate electrode (Cr) $1500{\AA}$ under coming 7059 glass substrate. We have fabricated a-SiN:H, conductor, etch-stopper and photoresistor on gate electrode in sequence, respectively. The thickness of these, thin films is formed with a-SiN:H ($2000{\mu}m$), a-Si:H($2000{\mu}m$) and $n^+a-Si:H$ ($500{\mu}m$). We have deposited $n^+a-Si:H$, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the $n^+a-Si:H$ layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si:H TFTs decreasing parasitic capacitance of source-drain show drain current of $8{\mu}A$ at 20 gate voltages, $I_{on}/I_{off}$ ratio of ${\sim}10^8$ and $V_{th}$ of 4 volts.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.7
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• pp.1393-1398
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• 2009

Conventionally, etching is first considered for microelectronics fabrication process and is specially important in process of a-Si:H thin film transistor for LCD. In this paper, we stabilize properties of device by development of wet and dry etching process. The a-Si:H TFTs of this paper is inverted staggered type. The gate electrode is lower part. The gate electrode is formed by patterning with length of 8 ${\mu}$m${\sim}$16 ${\mu}$m and width of 80${\sim}$200 ${\mu}$m after depositing with gate electrode (Cr) 1500 ${\AA}$under coming 7059 glass substrate. We have fabricated a-SiN:H, conductor, etch-stopper and photo resistor on gate electrode in sequence, respectively. The thickness of these thin films is formed with a-SiN:H (2000 ${\mu}$m), a-Si:H(2000 ${\mu}$m) and n+a-Si:H (500 ${\mu}$m), We have deposited n-a-Si:H, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the n+a-Si:H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. In the fabricated TFT, the most frequent problems are over and under etching in etching process. We were able to improve properties of device by strict criterion on wet, dry etching and cleaning process.

• Korean Journal of Environmental Agriculture
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• v.32 no.2
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• pp.123-127
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• 2013

BACKGROUND: The incandescent bulb and compact fluorescent lamp are widely using as a light sources for daylength extension of chrysanthemum. But, these light sources consume a lot of electricity and have short longevity. A light-emitting diode (LED) is a semi conductor light source. LEDs have many advantages over incandescent light sources including lower energy consumption, longer lifetime. In this study, we investigated the intensity of red light to control flowering of chrysanthemum (Dendranthema grandiflorum cv. "Shinma") by using LEDs. METHODS AND RESULTS: The red (660 nm) and far-red (730 nm) light were irradiated subsequently to investigate photo-reversible flowering responses of chrysanthemum. The flowering of chrysanthemum was inhibited by night interruption with red light but subsequently irradiated far-red light induced the flowering of chrysanthemum. This photoreversibility, reversion of the inductive effect of a brief red light pulse by a subsequent far-red light pulse, is a property of photo responses regulated by the plant photoreceptor phytochrome B. Four different intensity of red light of 0.7, 1.4, 2.1, and $2.8{\mu}mol/m^2/s$ (PAR) were irradiated at growth room in order to determine the threshold for floral inhibition of chrysanthemum. Over $1.4{\mu}mol/m^2/s$ of the red lights irradiated chrysanthemums were not flowered. The plant length, fresh weight, number of leaves, and leaf area of chrysanthemum irradiated with red light were increased by 17%, 36%, 11%, and 48%, respectively, compared to those of compact fluorescent lamp. CONCLUSION(S): The red light and subsequential far-red light showed that the photoreversibility on flowering of chrysanthemum. The red light ($1.4{\mu}mol/m^2/s$ of red LEDs) and white light (50 Lux of compact fluorescent lamp) have the same effect on inhibition of flowering in chrysanthemum. Additionally, the red light increased the plant height and dry weight of chrysanthemum.

• Bulletin of the Korean Chemical Society
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• v.35 no.1
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• pp.35-38
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• 2014

Herein, we report on the preparation of red fluorescent Si nanoparticles stabilized with styrene. Nano-sized Si particles emit fluorescence under UV excitation, which could be used to open up new applications in the fields of optics and semi-conductor research. Unfortunately, conventional methods for the preparation of red fluorescent Si nanoparticles suffer from the lack of a fully-established standard synthesis protocol. A common initial approach during the preparation of semi-conductors is the etching of crystalline Si wafers in a HF/ethanol/$H_2O$ bath, which provides a uniformly-etched surface of nanopores amenable for further nano-sized modifications via tuning of various parameters. Subsequent sonication of the etched surface crumbles the pores on the wafer, resulting in the dispersion of particles into the solution. In this study, we use styrene to occupy these platforms to stabilize the surface. We determine that the liberated silicon particles in ethanol solution interact with styrene, resulting in the substitution of Si-H bonds with those of Si-C as determined via UV photo-catalysis. The synthesized styrene-coated Si nanoparticles exhibit a stable, bright, red fluorescence under excitation with a 365 nm UV light, and yield approximately 100 mg per wafer with a synthesis time of 2 h. We believe this protocol could be further expanded as a cost-effective and high-throughput standard method in the preparation of red fluorescent Si nanoparticles.

• Korean Journal of Optics and Photonics
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• v.19 no.4
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• pp.249-254
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• 2008

We developed a new x-ray image sensor utilizing a reflection-mode liquid crystal panel as its sensitive element, and tested its functionality by using it to obtain an x-ray image of a printed circuit board. In the liquid crystal x-ray image sensors hitherto reported, the liquid crystal layer is in direct contact with the photoconductive film which is deposited on a glass substrate. In the fabrication of the new x-ray image sensor, a liquid crystal panel is fabricated in the first step by using a pair of glass plates of a few centimeters thicknrss. Then one of the glass substrates is ground until its thickness is reduced to about $60\;{\mu}m$. After polishing the glass plate, dielectric films for high reflectance at 630 nm, a film of amorphous selenium for photoconduction, and a transparent conductive film for electrode are deposited in sequence. The new x-ray image sensor has several merits: primarily, fabrication of a large area sensor is more easily compared with the old fashioned x-ray image sensors. Since the reflection type liquid crystal panel has a very steep response curve, the new x-ray sensor has much more sensitivity to x-rays compared with the conventional x-ray area sensor, and the radiation dosage can be reduced down to less then 20%. By combining the new x-ray sensor with CCD camera technology, real-time x-ray images can be easily captured. We report the structure, fabrication process and characteristics of the new x-ray image sensor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.151-151
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• 2009

Recently, there has been increasing interest in amorphous oxide semiconductors to find alternative materials for an amorphous silicon or organic semiconductor layer as a channel in thin film transistors(TFTs) for transparent electronic devices owing to their high mobility and low photo-sensitivity. The fabriction of amorphous oxide-based TFTs at room temperature on plastic substrates is a key technology to realize transparent flexible electronics. Amorphous oxides allows for controllable conductivity, which permits it to be used both as a transparent semiconductor or conductor, and so to be used both as active and source/drain layers in TFTs. One of the materials that is being responsible for this revolution in the electronics is indium-zinc-tin oxide(IZTO). Since this is relatively new material, it is important to study the properties of room-temperature deposited IZTO thin films and exploration in a possible integration of the material in flexible TFT devices. In this research, we deposited IZTO thin films on polyethylene naphthalate substrate at room temperature by using magnetron sputtering system and investigated their properties. Furthermore, we revealed the fabrication and characteristics of top-gate-type transparent TFTs with IZTO layers, seen in Fig. 1. The experimental results show that by varying the oxygen flow rate during deposition, it can be prepared the IZTO thin films of two-types; One a conductive film that exhibits a resistivity of $2\times10^{-4}$ ohm${\cdot}$cm; the other, semiconductor film with a resistivity of 9 ohm${\cdot}$cm. The TFT devices with IZTO layers are optically transparent in visible region and operate in enhancement mode. The threshold voltage, field effect mobility, on-off current ratio, and sub-threshold slope of the TFT are -0.5 V, $7.2\;cm^2/Vs$, $\sim10^7$ and 0.2 V/decade, respectively. These results will contribute to applications of select TFT to transparent flexible electronics.