• Bulletin of the Korean Chemical Society
• /
• v.32 no.10
• /
• pp.3629-3633
• /
• 2011

The effect of a dense $TiO_2$ blocking layer prepared using the sol-gel method on the performance of dye-sensitized solar cells was studied. The blocking layer formed directly on the working electrode, separated it from the electrolyte, and prevented the back transfer of electrons from the electrode to the electrolyte. The dyesensitized solar cells were prepared with a working electrode of fluorine-doped tin oxide glass coated with a blocking layer of dense $TiO_2$, a dye-attached mesoporous $TiO_2$ film, and a nano-gel electrolyte, and a counter electrode of Pt-deposited FTO glass. The gel processing conditions and heat treatment temperature for blocking layer formation affected the morphology and performance of the cells, and their optimal values were determined. The introduction of the blocking layer increased the conversion efficiency of the cell by 7.37% for the cell without a blocking layer to 8.55% for the cell with a dense $TiO_2$ blocking layer, under standard illumination conditions. The short-circuit current density ($J_{sc}$) and open-circuit voltage ($V_{oc}$) also were increased by the addition of a dense $TiO_2$ blocking layer.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.155.1-155.1
• /
• 2015

Nowadays, Plasma has been used in biological, medical such as wound healing, plant grow, killing cancer. When plasma generated, UV light and ROS(Reactive oxygen species), RNS(Reactive nitrogen species) can generated and those things effect to biological material. So we made simple plasma device using needle type of electrode and generated plasma. We used three kinds of gas and measured applied voltage and current. Also we observed optical emission spectrum. Using deuterium ramp, we can observed absorption spectrum and calculated radical density by lambert-beer's law. It is around ~1016cm3. And we can see the time-resolved absorption spectrum from monochromator, PMT(photo multiply tube), IV-converter, oscilloscope.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.05c
• /
• pp.189-192
• /
• 2001

In this paper, an novel optical measuring system based on the electro-optic effect has been proposed and realized using Pockels cell with a view to detecting partial discharge taking place at the needle plane electrode. This system has the following advantages ; nonmetallic probe sensor, immune to external EMI noise and broad band response of the Pockels cell from DC to GHz. This system is constructed by He-Ne laser, Mach-Zehnder interferometer with Pockels sensor, balanced photo receiver, data acquisition board and PC. The response characteristics of the developed proto type sensor are examined for AC and corona discharge.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.343-344
• /
• 2012

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.326-326
• /
• 2014

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.441-441
• /
• 2009

Dye-sensitized solar cells (DSSCs) have been widely investigated as a next-generation solar cell because of their simple fabrication process and low coats. The cells use a porous nanocrystalline TiO2 matrix coated with a sensitizer dye that acts as the light-harvesting element. The photo-exited dye injects electrons into the $TiO_2$ particles, and the oxide dye reacts with I- in the electrolyte in regenerative cycle that is completed by the reduction of $I_3^-$ at a platinum-coated counter electrode. Since $TiO_2$ porous film plays a key role in the enhancement of photoelectric conversion efficiency of DSSC, many scientists focus their researches on it. Especially, a high light-to-electricity conversion efficiency results from particle size and crystallographic phase, film porosity, surface structure, charge and surface area to volume ratio of porous $TiO_2$ electrodes, on which the dye can be sufficiently adsorbed. Effective treatment of the photoanode is important to improve DSSC performance. In this paper, to obtain properties of surface and dispersion as nitric acid treated $TiO_2$ photoelectrode was investigate. The photovoltaic characteristics of DSSCs based the electrode fabricated by nitric acid pre-treatment $TiO_2$ materials gave better performances on both of short circuit current density and open circuit voltage. We compare dispersion of $TiO_2$ nanoparticles before and after nitric acid treatment and measured Ti oxidized state from XPS. Low charge transfer resistance was obtained in nitric acid treated sample than that of untreated sample. The dye-sensitized solar cell based on the nitric acid treatment had open-circuit voltage of 0.71 V, a short-circuit current of 15.2 mAcm-2 and an energy conversion efficiency of 6.6 % under light intensity of $100\;mWcm^{-2}$. About 14 % increases in efficiency obtained when the $TiO_2$ electrode was treated by nitric acid.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.269-270
• /
• 2009

The biased vertical alignment (BVA) liquid crystal (LC) mode shows a has a distinct advantage of lower manufacture cost due to the elimination of a lithographic process step to form either ITO-patterning or protrusions on the color-filter substrates. However, those devices have complex voltage conditions which is the respective induce voltage on common electrode, pixel electrode and bias electrode when positive and negative frame. In order to overcome the complex voltage condition, the pretilt angles is controlled by photo polymerization of the UV-curable reactive mesogen (RM). According to our studies, voltages to the cell are critical to achieve an optimized surface-modified quality BVA (Q-BVA) mode which provides the well defined reorientation of the LCs with respect to an electric field.

• Transactions on Electrical and Electronic Materials
• /
• v.14 no.6
• /
• pp.312-316
• /
• 2013

In this study, short-circuit preventive layer (blocking layer) was deposited between conductive transparent electrode and porous $TiO_2$ film in the DSSCs. As blocking layer, we selected the metal-oxide such as $TiO_2$, $Nb_2O_5$ and ZnO. The sheet resistance with each different blocking layers were 18 ${\Omega}/sq.$ for the $TiO_2$, 10 ${\Omega}/sq.$ for the $Nb_2O_5$ and 8 ${\Omega}/sq.$ for the ZnO, while the RMS (Root Mean Square) roughness value of DSSCs were 39.61 nm for the $TiO_2$, 41.84 nm for the $Nb_2O_5$ and 36.14 nm for the ZnO respectively. From the results of photocurrent-voltage curves, a sputtered $Nb_2O_5$ blocking layer showed higher performance on 2.64% of photo-electrochemical properties. The maximum of conversion efficiency which was achieved under 1 sun irradiation by depositing the blocking layer increased up to 0.56%.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.1214-1218
• /
• 2006

We introduced simple fabrication process for field emission devices based on carbon nanotubes (CNTs) emitters. Instead of using the ITO material as a transparent electrode, a metal (Au) with thickness of 5-20nm was used. Moreover, the ITO patterning process was eliminated by depositing metal layer, before the CNT printing process. In addition, the thin metal layer on photo resist (PR) layer was used as UV block. We fabricated the CNT field emission arrays of triode structure with simple process. And I-V characteristics of field emission arrays were measured. The maximum current density of $254{\mu}A/cm2$ was achieved when the gate and the anode voltage was kept 150V and 3000V, respectively. The distance between anode and cathode was kept constant.

• Journal of the Semiconductor & Display Technology
• /
• v.9 no.4
• /
• pp.25-29
• /
• 2010

We have investigated the effect of surface roughness of TCO substrate on the characteristics of OLED (organic light emitting diodes) devices. In order to control the surface roughness of AZO thin films, we have processed photo-lithography and reactive ion etching. The micro-size patterned mask was used, and the etching depth was controlled by changing etching time. The surface morphology of the AZO thin film was observed by FESEM and atomic force microscopy (AFM). And then, organic materials and cathode electrode were sequentially deposited on the AZO thin films. Device structure was AZO/${\alpha}$-NPD/DPVB/$Alq_3$/LiF/Al. The DPVB was used as a blue emitting material. The electrical characteristics such as current density vs. voltage and luminescence vs. voltage of OLED devices were measured by using spectrometer. The current vs. voltage and luminance vs. voltage characteristics were systematically degraded with increasing surface roughness. Furthermore, the retention test clearly presented that the reliability of OLED devices was directly influenced with the surface roughness, which could be interpreted in terms of the concentration of the electric field on the weak and thin organic layers caused by the poor step coverage.