• Journal of the Speleological Society of Korea
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• no.77
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• pp.21-30
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• 2007

Photo-lithography lies in the middle of the wafer fabrication process. It is often considered as the most critical step in the IC process. We use a mask in exposure steps of the photo-lithography. Typically, 20 to 25 different levels of masks are required to complete an IC device. That means, if a photo process can be developed with the use of only one photo mask, we can reduce more process cost. To satisfy this, we plan to develop an alternative photo mask. For this reason, we chose to use a LCD. We expect to develop a LCD panel that can be changed by electrical control. This is the main idea about the adjustive photo mask. The Photo mask made of LCD panel will replace the former one.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.850-853
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• 2005

This paper presents issues of display hardware architecture, relating to memory, display driver IC architecture, and chip-to-chip interface. To achieve a low power and low cost mobile phone, not only the display architecture must be carefully selected, but also the driver-ICs optimized to accommodate the different modes of operation found in typical handheld devices. The technique of forming a photo sensor in each pixel using TFT and display module architecture are developed to add multi functions in display such as fingerprint recognition, image scanning, and integrated touch screen. Detailed architectures of IC partitioning, high-speed serial interface, D/A converter, and multi functions such as fingerprint recognition and image scanning using photo sensors are important to a power optimized system.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.05a
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• pp.713-716
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• 2008

This paper presents an automatic back-light brightness control system for mobile displays. One of the most important factors in mobile display is the power consumption due to the limited and movable power source. More than 80% of power of the LCD display is consumed by LED bark-light unit (BLU). The target brightness also becomes higher because of its moving picture and high resolution image, so there are some side effects for not only excessive power consumption but also ergonomic inconvenience in dark environment. To prevent this discomfort and reduce power consumption, this paper proposes automatic brightness control (ABC) technique in mobile displays. Developed system contains TFT-LCD panel with built-in photo sensor, driver IC capable of controlling photo sensor, and BLU. Since the photo sensor array built in panel detects automatically outdoor ambient light intensity, the power of BLU in dark environment is reduced. Developed ABC system showed reduced power consumption of 50% in dark environment. We believe that the proposed system is very useful to control power of mobile TFT-LCD.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1175-1178
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• 2005

Brittle materials, especially single-crystal silicon wafer, are widely used for sensors, IC industry, and MEMS applications. e general machining process of crack easy materials is by chemical agents, but it is hazardous and time consuming. Also, it is difficult to get high aspect ratio micro structure. As an alternative tool, an AJM(Abrasive jet machining) is promising method in terms of high aspect ratio and production cost. In this study, to get more precise detail compared to general AJM, photo polymer mask, SU-8, used in photolithography was applied in AJM. Process parameters such as abrasive diameter, air pressure, nozzle diameter, flow rate of abrasive in AJM and a variety of conditions in spin coating were decided. Finally, micro channel and mixer was fabricated to see the efficiency of the AJM with photo polymer mask.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.717-722
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• 2004

A design was done, and all characteristic of photodetectr of the web pattern type which a standard process of the Bipolar which Si PIN structure was used in this paper, and was used for the current amplifier design was used, and high-speed, was used as receiving optcal area of high altitude, and the module which had a low dark current characteristic was implemented with one chip with a base. Important area decreases an area of Ie at the time of this in order to consider an electrical characteristic and economy than the existing receiving IC, and performance of a product and confidence are got done in incense. First of all, the receiving IC which a spec, pattern of a wafer to he satisfied with the following electrical optical characteristic that produced receiving IC of 5V and structure are determined, and did one-chip is made. On the other hand, the time when AR layer of double is $Si_{3}N_{4}/SiO_{2}=1500/1800$ has an optical reflectivity of less than $10{\%}$ on an incidence optical wavelength of 660 ,and, in case of photo detector which reverse voltage made with 1.8V runs in 1.65V, an error about a change of thickness is very the thickness that can be improved surely. And, as for the optical current characteristic, about 5 times increases had the optical current with 274nA in 55nA when Pc was -27dBm. A BJT process is used, and receiving IC running electricity suitable for low voltage and an optical characteristic in minimum 1.8V with a base with two phases is made with one chip. IC of low voltage operates in 1.8V and 3.0V at the same time, and optical link receiving IC is going to be implemented

• Korean Journal of Food Science and Technology
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• v.26 no.3
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• pp.195-198
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• 1994

A bubble counter was designed and fabricated for the measurement of gas production rate on the basis of number of bubbles produced from yeast fermentor. The sensor was consisted of bubble forming device and electronic signal processing circuitry. The bubble forming device was built with bubble collector and liquid cell to form uniform size of bubble. Bubbles were counted by pulses formed by photo-interrupter circuitry having 8-bit binary latch counter. The gas production rate curves on the basis of bubble counted showed a good agreement to that of growth curves obtained by the optical measurement method. The sensor was succesfully applied to monitoring of the nutrient utilization test with glucose and galactose media.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.173-174
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• 2012

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.4
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• pp.58-63
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• 1992

Photolithography techniques were applied for immobilization of GOD membrane on the pH-ISFET with photo-sensitive polymers to realize ISEFT glucose sensor. This IC technology-compatible glucose sensor showed good sensing characteristics in the wide range of 10-1000 mg/dl glucose concentrations.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.509-512
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• 2004

This paper proposed a new solid State Relay(SSR) structure that can replace the conventional SSR as a power IC. The photodiode arrays, the main part of this structure, were designed and integrated in the same power It chip with the output parts, LDMOSFET and BJT, on a SOI substrate. The fabrication of this input part shared the same output LDMOSFET fabrication processs, except the additional deposition of Silicon nitride($Si_3N_4$) for the photo-detection part. According to LED illumination intensites and photo detecting areas, we could obtain voltage of 0.49V ${\~}$0.52V and current of 5.5uA ${\~}$ 108uA respectively from the fabricated unit photodiode. The maximum value of the voltage and the current we could obtain from the photodiode array were 3.58V and 24.4uA respectively, and the voltage was enough to operate the output LDMOSFET

• Journal of the Korea Safety Management & Science
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• v.6 no.4
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• pp.155-170
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• 2004

Among the semiconductor If-chips, unlike memory chips, a majority of Application Specific IC(ASIC) products are produced by customer orders, and meeting the customer specified due date is a critical issue for the case. However, to the one who understands the nature of semiconductor manufacturing, it does not take much effort to realize the difficulty of meeting the given specific production due dates. Due to its multi-layered feature of products, to be completed, a semiconductor product(called device) enters into the fabrication manufacturing process(FAB) repeatedly as many times as the number of the product specified layers, and fabrication processes of individual layers are composed with similar but not identical unit processes. The unit process called photo-lithography is the only process where every layer must pass through. This re-entrant feature of FAB makes predicting and planning of due date of an ordered batch of devices difficult. Parallel machines problem in the photo process, which is bottleneck process, is solved with restricted roll out algorithm. Roll out algorithm is a method of solving the problem by embedding it within a dynamic programming framework. Restricted roll out algorithm Is roll out algorithm that restricted alternative states to decrease the solving time and improve the result. Results of simulation test in condition as same as real FAB facilities show the effectiveness of the developed algorithm.