• Journal of the Korean Vacuum Society
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• v.5 no.2
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• pp.127-132
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• 1996

We measured photoreflectance spectrum characteristics of InGaAs grown by MBE method on semi-insulating GaAs. The PR signal splitting of substate and epilayer was observed. The band gap energy was about 1.40 eV. It make to 8 meV difference when it is fitted by Pan's equation. The reason is stress on the interface, which is due to lattice mismatch between epilayer and substate . We became to know that reason influence crystalline on growing sample. In InGaAs epilayer, temperature dependency is low. The efficiency of photo absorption is high and activate over 200K. In this case when it is annealed at $400^{\circ}C$ below growing temperature, PR signal splitting is remarkable and crystalline is inhanced.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.952-954
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• 2003

We report the photo-(PL) and electroluminescence (EL) properties of new conjugated compounds based on carbazolyl vinylene moiety, 3,3'-(1,4-phenylene di-2,1-ethenediyl) bis[9-ethyl-(E,E)-9H-carbazole](PEEC) and 3,3'-([1,1'-biphenyl]-4,4'-diyldi-2,1-ethenediyl)bis[9-ethyl-9H-carbazole](BPEEC), as emitting materials. The ITO/m-MTDATA/NPB/BPEEC/Alq3/LiF/Al device shows bluish-green EL spectrum at 490nm and turn-on voltage at 8V. PEEC shows bluish-green EL around ${\lambda}$ max=496nm and turn-on voltage at 6V and 2.4 Cd/A efficiency in ITO/m-MTDATA/NPB/PEEC/Alq3/LiF/Al device.

• Elastomers and Composites
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• v.52 no.2
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• pp.131-135
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• 2017

Zinc nitrate hexahydrate [$Zn(NO_3){\cdot}6H_2O$] and sodium hydroxide [NaOH] were used as source reagents in the preparation of ZnO nanoparticles in an aqueous solution containing deionized water and ethanol in a ratio of 2:5 (v/v). ZnO nanoparticles were heated in an electric furnace at $700^{\circ}C$ for 2 h under an atmosphere of inert argon gas. The morphological and structural properties of the nanoparticles were characterized by scanning electron microscopy (SEM) and powder X-ray diffractometry (XRD). UV-vis spectrophotometry was used to analyze the photocatalytic degradation of 3-nitrophenol with ZnO nanoparticles as photocatalyst under ultraviolet irradiation at 254 nm. Evaluation of the kinetic of the photo-catalytic degradation of 3-nitrophenol indicated that the degradation of 3-nitrophenol with ZnO nanoparticles obeyed the pseudo-first order reaction rate model.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.198.1-198.1
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• 2014

Many efforts have been devoted on chemical modification of graphene layer to modulate its electrical properties. In the previous report, laser irradiation on the CYTOP(perfluoropolymer) doped graphene layer induces chemical modification of it, resulting in the insulating I-V characteristics. While the results strongly denoted C-F bond formation after irradiation, the detailed process of photo-induced chemical change is not known yet. To probe this, we utilized synchrotron based SPEM (scanning photoelectron emission spectroscopy) in NSRRC, Taiwan. We irradiate the sample by photon of 614 eV in a stepwise manner as a function of time. As photon irradiation increased, difluoride moieties in the CYTOP was broken, and then formed mono-fluoride with carbon atoms consisting graphene layer.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.2
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• pp.63-67
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• 2010

The organic solar cells with Glass/ITO/PEDOT:PSS/P3HT:PCBM/Al structure were fabricated using regioregular poly (3-hexylthiophene) (P3HT) polymer:(6,6)- phenyl $C_{61}$-butyric acid methyl ester (PCBM) fullerene polymer as the bulk hetero-junction layer. The P3HT and PCBM as the electron donor and acceptor materials were spin casted on the indium tin oxide (ITO) coated glass substrates. The optimum mixing concentration ratio of photovoltaic layer was found to be P3HT:PCBM = 4:4 in wt%, indicating that the short circuit current density ($J_{SC}$), open circuit voltage ($V_{OC}$), fill factor (FF) and power conversion efficiency (PCE) values were about 4.7 $mA/cm^2$, 0.48 V, 43.1% and 0.97%, respectively. To investigate the effects of the post annealing treatment, as prepared organic solar cells were post annealed at the treatment time range from 5min to 20min at $150^{\circ}C$. $J_{SC}$ and $V_{OC}$ increased with increasing the post annealing time from 5min to 15min, which may be originated from the improvement of the light absorption coefficient of P3HT and improved ohmic contact between photo voltaic layer and Al electrode. The maximum $J_{SC},\;V_{OC}$, FF and PCE values of organic solar cell, which was post annealed for 15min at $150^{\circ}C$, were found to be about 7.8 $mA/cm^2$, 0.55 V, 47% and 2.0%, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• Journal of Fashion Business
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• v.16 no.1
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• pp.69-82
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• 2012

This thesis aimed to reduce the differences of hair color when hair coloring, so it researched the differences & changes in hair color before shampoo v.s. after shampoo and dry on different heat processes when acid hair color dyeing. Five hair color dyes (Y, R, B, G, Br) manufactured by two different corporations were used. The acid hair color dyes were tinted on black and bleached hair pieces subjected to 3 different heat process; 1. Normal Temperature($25^{\circ}C$, 30min.) / 2. Heating($40^{\circ}C$, 15min.)+Normal Temperature($25^{\circ}C$, 15min.) / 3. Heating($40^{\circ}C$, 30min.). Color numbers were divided by NCS value, chroma, and hue. Statistical averages were derived and t-test was conducted using SPSS V12. Hair color differences and changes were drawn on an NCS chart using Photo Shop PS. The conclu is; If acid hair colorings are separated by a heating process, hair value & chroma change before shampoo vs. after shampoo & dry regardless of the color of hair and the heat process. Hue is not changed or shifted counter clockwise NCS color circle, but some exceptions, and it's the same when the total heat process results are combined. Black hair's value shifted downward and chroma left, and hue stayed either neutral or one color or it shifted counter clockwise on NCS color circle. Bleached hair's value shifted upward and chroma right, and hue stayed one color or shifted counter clockwise, but some exceptions. And it can be shown on NCS chart.

• Korean Journal of Plant Resources
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• v.19 no.3
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• pp.385-391
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• 2006

In vitro-grown axillary buds of Melia aredarach were successfully cryopreserved by vitrification. On the MS medium supplemented with BA 1 mg/L, multiple shoots were developed within $4{\sim}5$ weeks. Plantlets of Melia azedarach were cold-hardened at $10^{\circ}C$ for a 16-hr photo-period for 6 weeks. Excised axillary shoot-tips from hardened plantlets were precultured on a solidified Murashige & Skoog agar medium (MS) supplemented with 0.7 M sucrose for 1 day at $25^{\circ}C$. Axillary shoot-tip meristems wert dehydrated using a highly concentrated vitrification solution (PVS2) for 60 min at $0^{\circ}C$ prior to a direct plunge into liquid nitrogen (LN). The PVS2 vitrification solution consisted of 30% glycerol (w/v), 15% ethylene glycol (w/v), 15% DMSO (w/v) in MS medium containing 0.4M sucrose. After short-term warming in a water bath at $40^{\circ}C$, the meristems were transferred into 2 ml of MS medium containing 1.2M sucrose for 15 min and then planted on solidified MS culture medium. Successfully vitrified and warmed meristems resumed growth within 2 weeks and directly developed shoots without intermediary callus formation. The survival rate of cold-hardened plantlets for 3 and 4 weeks was 90%. We did not find any difference in PCR-band patterns between control and cryopreserved plants. This method appears to be a promising technique for cryopreserving axillary shoot-tips from in vitro-grown plantlets of Medicinal plants.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.295-298
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• 2003

Reflective mode liquid crystal on silicon (LCoS) microdisplay is the major technology that can produce extremely high-resolution displays. A very large number of pixels can be packed onto the CMOS circuit with integrated drivers that can be projected to any size screen. Large size direct-view thin film transistor (TFT) LCDs becomes very difficult to make and to drive as the information content increases. However, the existing LC alignment technology for the LCoS cell fabrication is still the mechanical rubbing method, which is prone to have minor defects that are not visible normally but can be detrimental if projected to a large screen. In this paper, application of photo-alignment to LCoS fabrication is presented. The alignment is done by three-step exposure process. A MTN $90^{\circ}$ mode is chose as to evaluate the performance of this technique. The comparison with rubbing mode shows the performance of photo-alignment is comparable and even better in some aspect, such as sharper RVC curve and higher contrast ratio.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.54 no.11
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• pp.654-659
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• 2005

An improved power supply for APD(Avalanche Photo Diode) with a received optical power monitoring circuit allows the received optical power increase temporary without of the degradation of the electrical signal. For the cost reduction and simple fabrication, an improved power supply has been proposed that it was designed for driving a APD as a receiving device of a wireless optical transmission system. It was demonstrated that it was possible to improve a dynamic range by compensating the temperature coefficient of the APD up to 1.0 V/$^{\circ}C$ through the power supply. Also, for an efficient transmission at the receiver end, a simple structure of a single cylindrical micro-lens configuration was used in conjunction with the laser diode to partially compensate a laser beam ellipticity. For this purpose, an astigmatism introduced by the micro-lens is utilized for the additional compensation of the beam ellipticity at the receiver end. In this paper, it is demonstrated that an efficient beam shaping is realized by using the proposed configuration consisting of the single lens attached to the laser diode.