• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.79-79
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• 2017

Metallic biomaterials have been mainly used for the fabrication of medical devices for the replacement of hard tissue such as artificial hip joints, bone plates, and dental implants. Because they are very reliable on the viewpoint of mechanical performance. This trend is expected to continue. Especially, Ti and Ti alloys are bioinert. So, they do not chemically bond to the bone, whereas they physically bond with bone tissue. For their poor surface biocompatibility, the surface of Ti alloys has to be modified to improve the surface osteoinductivity. Recently, ceramic-like coatings on titanium, produced by plasma electrolytic oxidation (PEO), have been developed with calciumand phosphorus-enriched surfaces. A lso included the influences of coatings, which can accelerate healing and cell integration, as well as improve tribological properties. However, the adhesions of these coatings to the Ti surface need to be improved for clinical use. Particularly Silicon (Si) has been found to be essential for normal bone, cartilage growth and development. This hydroxyapatite, modified with the inclusion of small concentrations of silicon has been demonstrating to improve the osteoblast proliferation and the bone extracellular matrix production. Strontium-containing hydroxyapatite (Sr-HA) was designed as a filling material to improve the biocompatibility of bone cement. In vitro, the presence of strontium in the coating enhances osteoblast activity and differentiation, whereas it inhibits osteoclast production and proliferation. The objective of this work was to study Morphology of bone-like apatite formation on Sr and Si-doped hydroxyapatite surface of Ti-6Al-4V alloy after plasma electrolytic oxidation. Anodized alloys was prepared at 270V~300V voltages with various concentrations of Si and Sr ions. Bone-like apatite formation was carried out in SBF solution. The morphology of PEO, phase and composition of oxide surface of Ti-6Al-4V alloys were examined by FE-SEM, EDS, and XRD.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.28.1-28.1
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• 2009

The superior properties of ZnO such as high exciton binding energy, high thermal and chemical stability, low growth temperature and possibility of wet etching process in ZnO have great interest for applications ranging from optoelectronics to chemical sensor. Particularly, vertically well-aligned ZnO nanorods on large areas with good optical and structural properties are of special interest for the fabrication of electronic and optical nanodevices. Currently, low-dimensional ZnO is synthesized by metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), thermal evaporation, and sol.gel growth. Recently, our group has been reported about achievement the growth of Ga-doped ZnO nanorods using ZnO seed layer on p-type Si substrate by RF magnetron sputtering system at high rf power and high growth temperature. However, the crystallinity of nanorods deteriorates due to lattice mismatch between nanorods and Si substrate. Also, in the growth of oxide using sputtering, the oxygen flow ratio relative to argon gas flow is an important growth parameter and significantly affects the structural properties. In this study, Phosphorus (P) doped ZnO nanorods were grown on c-sapphire substrates without seed layer by radio frequency magnetron sputtering with various argon/oxygen gas ratios. The layer change films into nanorods with decreasing oxygen partial pressure. The diameter and length of vertically well-aligned on the c-sapphire substrate are in the range of 51-103 nm and about 725 nm, respectively. The photoluminescence spectra of the nanorods are dominated by intense near band-edge emission with weak deep-level emission.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.322-322
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• 2010

For boron doping on n-type silicon wafer, around $1,000^{\circ}C$ doping temperature is required, because of the relatively low solubility of boron in a crystalline silicon comparing to the phosphorus case. Boron doping by fiber laser annealing and lamp furnace heat treatment were carried out for the uniformly deposited p-a-Si:H layer. Since the uniformly deposited p-a-Si:H layer by cluster is highly needed to be doped with high temperature heat treatment. Amorphous silicon layer absorption range for fiber laser did not match well to be directly annealed. To improve the annealing effect, we introduce additional lamp furnace heat treatment. For p-a-Si:H layer with the ratio of $SiH_4:B_2H_6:H_2$=30:30:120, at $200^{\circ}C$, 50 W power, 0.2 Torr for 30 min. $20\;mm\;{\times}\;20\;mm$ size fiber laser cut wafers were activated by Q-switched fiber laser (1,064 nm) with different sets of power levels and periods, and for the lamp furnace annealing, $980^{\circ}C$ for 30 min heat treatment were implemented. To make the sheet resistance expectable and uniform as important processes for the $p^+$ layer on a polished n-type silicon wafer of (100) plane, the Q-switched fiber laser used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the fiber laser treatment showed the trade-offs between the lifetime and the sheet resistance as $100\;{\omega}/sq.$ and $11.8\;{\mu}s$ vs. $17\;{\omega}/sq.$ and $8.2\;{\mu}s$. Diode level device was made to confirm the electrical properties of these experimental results by measuring C-V(-F), I-V(-T) characteristics. Uniform and expectable boron heavy doped layers by fiber laser and lamp furnace are not only basic and essential conditions for the n-type crystalline silicon solar cell fabrication processes, but also the controllable doping concentration and depth can be established according to the deposition conditions of layers.

• Journal of Soil and Groundwater Environment
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• v.28 no.6
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• pp.24-32
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• 2023

Continuous increase of domestic meat consumption has inevitably increased generation of livestock manure and caused severe environmental impacts on ecosystem and human beings. This work produced biochar from cattle manure samples with different composting aging stages and investigated the properties of the produced biochar. The result of thermogravimetric analysis showed that thermal decomposition of the manure initiated at <600℃. The biochar yield was higher for the manure with a longer pre-composting period due to the elimination of microbially metabolized carbons during composting process. The result of FT-IR analysis showed that the number of surface functional groups were reduced during pyrolysis while enhancing the graphitic structures of the carbon framework. Manure samples tended to leach out N and P in leaching tests, with its amount higher for aged one than fresh one. However, their leaching was substantially suppressed when the manure was produced into biochar. In XPS spectra, it was found that N and P in the manure incorporated into biochar surface to form N-doped graphitic carbon and P-N-moieties, respectively. The findings of this work suggest that the thermochemical process can be of a viable option to valorize into biochar for potential environmental applications as well as to alleviate undesired nutrients loading to the environment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.454-455
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• 2009

Selective emitter structure have an important research subject for crystalline silicon solar cells because it is used in production for high efficiency solar cells. A selective emitter structure with highly doped regions underneath the metal contacts is widely known to be one of the most promising high-efficiency solution in solar cell processing. Since most of the selective emitter processes require expensive extra masking and double steps process. Formation of selective emitters is not cost effective. One method that satisfies these requirements is the method of screen-printing with a phosphorus doping paste. In this paper we researched two groups of selective emitter structure process. One was using dopant paste, and the other was using solid source, in order to compare their uniformity, sheet resistance and performance condition time.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1706-1707
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• 2007

A possibility of work function engineering on ZnO thin film is studied by in-situ and ex-situ doping process. The work function of ZnO thin film decreases with increasing boron and phosphorus doping quantity. But, the work function of Al-doped ZnO (AZO) thin film increases as the boron doping quantity incresess. The range of work function change on ZnO thin films is 3.5 eV to 5.5 eV. This result shows that the work function of ZnO thin film is indeed engineerable by changing materials of dopants and their compositional distribution of surface. We also discuss the possible mechanism of work function engineering on ZnO thin films.

• Electrical & Electronic Materials
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• v.10 no.8
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• pp.800-806
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• 1997

The behavior of de levels in rapid thermal annealed Fe-doped semi-insulating InP(100) was studied by photoinduced current transient spectrocopy(PICTS). In bulk InP, T2(Ec-0.24 eV), T3(Ec-0.30 eV) and T5(Ec-0.62 eV) traps were observed. After annealing the T2 trap was annihilated at 20$0^{\circ}C$ and recreated at 35$0^{\circ}C$. T3 trap was not affected below 40$0^{\circ}C$. With increasing temperature the concentration of T5 trap reduced and it was annihilated at 30$0^{\circ}C$. However the T1(Ec-0.16 eV) and T4(Ec-0.42 eV) traps were began to appear at 40$0^{\circ}C$and these concentrations were increased with annealing temperature. The T1 and T4 traps seem to be related to the isolated phosphorus vacancy( $V_{p}$) and $V_{p}$-indium antisite( $V_{p}$- $P_{in}$ ) or $V_{p}$-indium interstitial( $V_{p}$-I $n_{I}$) respectiely.respectiely.

• Korean Journal of Materials Research
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• v.4 no.8
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• pp.855-860
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• 1994

Ta-silicide films in polycide structure were prepared by rapid thermal annealing of sputtered Ta film on poly-Si and doped poly-Si. Effects of phosphorus on Ta-silicide formation were investigated. Independent of the ion dose($1 \times 10^{13}\to 5 \times 10^{15}$/ions/$\textrm{cm}^2$), Ta-silicide phases were formed at $800^{\circ}C$ and stabilized above $1000^{\circ}C$. From the result of XRD at $800^{\circ}C$ and $900^{\circ}C$, however, it was indicated that the more the doping concentration the weaker the intensity of Ta-silicide phases. Furthermore, the observation of SEM revealed that the increase of the doping concentration retarded silicidation. As the temperature increased, the dopant effect was weakened gradually and almost disappeared at $1000^{\circ}C$. Therefore the variation of the ion dose from ($1 \times 10^{13}\to 5 \times 10^{15}$/ions/$\textrm{cm}^2$) did not greatly affect the formation of Ta-silicide at high temperatures but retarded slightly the silicidation at low temperatures.

• Journal of the Korean Vacuum Society
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• v.21 no.6
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• pp.301-311
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• 2012

Discharge property of plasma jet devices is investigated for the application to the doping processes of crystalline solar cells and others. Current-voltage characteristics are shown as the typical normal-glow discharge in the various gas pressure of plasma jets, such as in the atmospheric plasma jets of Ar-discharge, in the ambient pressure of atmospheric discharge, and in the ambient Ar-pressure of Ar-discharge. The discharge voltage of atmospheric plasma jet is required as low as about 2.5 kV while the operation voltage of low pressure below 200 Torr is low as about 1 kV in the discharge of atmospheric and Ar plasma jets. With a single channel plasma jet, the irradiated plasma current on the doped silicon wafer is obtained high as the range of 10~50 mA. The temperature increasement of wafer is normally about $200^{\circ}C$. In the result of silicon wafers doped by phosphoric acid with irradiating the plasma jets, the doping profiles of phosphorus atoms shows the possibility of plasma jet doping on solar cells.

• Journal of the Korean Society of Radiology
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• v.13 no.4
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• pp.645-652
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• 2019

Phosphor with phosphorus doped with rare earth ions was investigated by searching Sr and Eu phosphors suitable for substitution of Eu ions with similar ionic radius to polyphosphate host. The $NaSr(PO_3)_3$ phosphor was synthesized by the solid state method and the $NaSr(PO_3)_3:Eu^{2+}$ phosphor was prepared by the carbon thermal reduction method. Both of the phosphors were identified by X - ray diffraction. The excitation and emission spectra of $NaSr(PO_3)_3:Eu^{3+}$ increased fluorescence intensity and intensity quenching with increasing $Eu^{3+}$ concentration. The higher the $Eu^{3+}$ concentration in the emission spectrum, the higher the local symmetry of $Eu^{3+}$ environment. The mechanism of concentration quenching, in which fluorescence decreases due to the energy transfer between $Eu^{2+}$ ions with the closest critical distance between $Eu^{2+}$ ions with increasing $Eu^{2+}$ ion concentration, was confirmed in the emission spectrum of $NaSr(PO_3)_3:Eu^{2+}$ concentration. It is possible to change the fluorescent region through the post-processing of single rare earth ion added phosphors, and it is possible to change the fluorescence by applying the energy transfer and concentration quenching mechanism according to the local symmetry of $Eu^{3+}$ will be used for high phosphor development.