• Asian Pacific Journal of Cancer Prevention
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• 제16권1호
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• pp.77-81
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• 2015

Background: The aim of the study was to determine whether the expression of baseline phosphorus (P) and magnesium (Mg) levels were prognostic in terms of stage and overall survival (OS) in newly diagnosed non-small cell lung cancer (NSCLC) and small cell lung cancer (SCLC) patients. Materials and Methods: Retrospectively, 130 patients were selected at the time of diagnosis oflung cancer (100 with NSCLC and 30 with SCLC), before the initialization of any chemo-radiotherapy. The median age was 67 (range 29-92). IA, IB, IIA, IIB, IIIA, IIIB and IV stages were present in 3, 4, 19, 6, 25, 8, and 65 patients, respectively. After centrifugation, the levels of serum P and Mg were measured using the nephelometric method/ photometry and evaluated before any type of treatment. Results: Higher than normal levels of P were found in 127/130 patients, while only four patients had elevated Mg serum values. In terms of Spearman test, higher P serum values correlated with either stage (rho=- 0.334, p<0.001) or OS (rho=-0.212, p=0.016). Additionally, a significant negative correlation of Mg serum levels was found with stage of disease (rho=-0.135, P=0.042). On multivariate cox-regression survival analysis, only stage (p<0.01), performance status (p<0.01) and P serum (p=0.045) showed a significant prognostic value. Conclusions: Our study indicated that pre-treatment P serum levels in lung cancer patients are higher than the normal range. Moreover, P and Mg serum levels are predictive of stage of disease. Along with stage and performance status, the P serum levels had also a significant impact on survival. This information may be important for stratifying patients to specific treatment protocols or intensifying their therapies. However, larger series are now needed to confirm our results.

• Current Photovoltaic Research
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• 제2권4호
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• pp.147-151
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• 2014

A boron doping process using a boron tri-bromide ($BBr_3$) as a boron source was applied to form a $p^+$ emitter layer on an n-type mono-crystalline CZ substrate. Nitrogen ($N_2$) gas as an additive of the diffusion process was varied in order to study the variations in sheet resistance and the uniformity of doped layer. The flow rate of $N_2$ gas flow was changed in the range 3 slm~10 slm. The sheet resistance uniformity however was found to be variable with the variation of the $N_2$ flow rate. The optimal flow rate for $N_2$ gas was found to be 4 slm, resulting in a sheet resistance value of $50{\Omega}/sq$ and having a uniformity of less than 10%. The process temperature was also varied in order to study its influence on the sheet resistance and minority carrier lifetimes. A higher lifetime value of $1727.72{\mu}s$ was achieved for the emitter having $51.74{\Omega}/sq$ sheet resistances. The thickness of the boron rich layer (BRL) was found to increase with the increase in the process temperature and a decrease in the sheet resistance was observed with the increase in the process temperature. Furthermore, a passivated emitter solar cell (PESC) type solar cell structure comprised of a boron doped emitter and phosphorus doped back surface field (BSF) having Ni/Cu contacts yielding 15.32% efficiency is fabricated.

• 한국정보통신학회논문지
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• 제21권1호
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• pp.223-228
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• 2017

본 연구에서는 광대역 펄스감마선 탐지센서 최적화 설계를 수행하고 설계결과를 기반으로 탐지센서를 제작하여 전기적 특성을 분석하였다. 탐지센서의 최적화 설계를 위해 펄스감마선의 시간에 따른 에너지 프로파일로 부터 입력 변수를 도출하고 탐지감도 제어회로를 통하여 출력전류 범위를 결정하였다. 도출된 변수를 바탕으로 N-type Epi Wafer 및 TCAD(Technology Computer Aided Design)로 설계하고 제작하였다. 제작된 탐지센서의 전기적 특성 분석 결과 -3.3V 전압에서 12pA의 누설전류와 -5V의 전압에서 완전 공핍화 되는 특성을 가짐을 확인하였다. 제작된 센서의 포항가속기연구소 TEST LINAC 시험결과 감마선 설정 선율의 펄스방사선에 대해 고감도의 광전류를 생성시킴을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.280-284
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• 2004

Multicrystalline silicon wafers were textured in an alkaline bath, basically using sodium hydroxide and in acidic bath, using mainly hydrofluoric acid (HF), nitric acid $(HNO_3)$ and de-ionized water (DIW). Some wafers were also acid polished for the comparative study. Comparison of average reflectance of the samples treated with the new recipe of acidic solution showed average diffuse reflectance less than even 5 percent in the optimized condition. Solar cells were thus fabricated with the samples following the main steps such as phosphorus doping for emitter layer formation, silicon nitride deposition for anti-reflection coating by plasma enhanced chemical vapor deposition (PECVD) and front surface passivation, screen printing metallization, co-firing in rapid thermal processing (RTP) Furnace and laser edge isolation and confirmed >14 % conversion efficiency from the best textured samples. This isotropic texturing approach can be instrumental to achieve high efficiency in mass production using relatively low cost silicon wafers as starting material.

• 태양에너지
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• 제17권1호
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• pp.59-66
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• 1997

개방전압과 단락전류와 같은 태양전지 출력변수들은 접합깊이, 도핑농도, 금속접합 및 태양전지구조에 의한 변수들이다. 태양전지 설계의 중요한 요소로서 인이 도핑된 에미터와 금속사이의 금속접합은 일함수 차이가 작아 낮은 직렬저항을 가져야 한다. PESC 태양전지는 금속 접합장벽 전극으로 티타늄을 사용한다. 새로운 접합장벽 전극물질로 티타늄과 일함수가 비슷하지만 전기전도도가 우수한 크롬은 금속 접합장벽 전극으로 유망한 금속이다. 티타늄은 일함수 차가 작지만, 접합장벽으로 크롬은 태양전지 제조시 티타늄보다 우수한 전기적 특성들을 갖는다. 본 논문에서는 실리콘 태양전지의 접합장벽 금속전극의 특성을 비교 분석하였다.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2015년도 추계학술대회
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• pp.1121-1124
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• 2015

본 연구에서는 광대역 펄스감마선 탐지센서 최적화설계에 관한 연구를 수행하였다. 펄스감마선 탐지센서는 $1{\times}10^6{\sim}1{\times}10^8rad(Si)/s$의 방사선량에서 동작할 수 있도록 설계하였다. 에너지에 따른 펄스감마선 스펙트럼과 시간에 따른 에너지 비율을 기반으로 탐지센서 입력변수를 도출하고, 탐지감도 제어회로를 기반으로 탐지센서 출력전류를 도출하였다. N-type Epi Wafer를 이용하여 최적조건 탐지센서를 TCAD기반으로 설계하였다. 시뮬레이션 결과 인가전압 3.3V에서 최적 Epi층 두께는 45um다. 도핑농도는 N-type은 Arsenic으로 $1{\times}10^{19}/cm^3$, P-type은 Boron으로 $1{\times}10^{19}/cm^3$, Epi 층은 Phosphorus로 $3.4{\times}10^{12}/cm^3$다. 마지막으로 탐지센서는 원형으로 지름이 1.3mm 이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.174-174
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• 2008

Non-volatile memories using ferroelectric-gate field-effect transistors (Fe-FETs) with a metal/ferroelectric/semiconductor gate stack (MFS-FETs) make non-destructive read operation possible. In addition, they also have features such as high switching speed, non-volatility, radiation tolerance, and high density. However, the interface reaction between ferroelectric materials and Si substrates, i.e. generation of mobile ions and short retention, make it difficult to obtain a good ferroelectric/Si interface in an MFS-FET's gate. To overcome these difficulties, Fe-FETs with a metal/ferroelectric/insulator/semiconductor gate stack (MFIS-FETs) have been proposed, where insulator as a buffer layer is inserted between ferroelectric materials and Si substrates. We prepared $SrBi_2Ta_2O_9$ (SBT) film as a ferroelectric layer and $LaZrO_x$ (LZO) film as a buffer layer on p-type (100) silicon wafer for making the MFIS-FET devices. For definition of source and drain region, phosphosilicate glass (PSG) thin film was used as a doping source of phosphorus (P). Ultimately, the n-channel ferroelectric-gate FET using the SBT/LZO/Si Structure is fabricated. To examine the ferroelectric effect of the fabricated Fe-FETs, drain current ($I_d$) versus gate voltage ($V_g$) characteristics in logarithmic scale was measured. Also, drain current ($I_d$) versus drain voltage ($V_d$) characteristics of the fabricated SBT/LZO/Si MFIS-FETs was measured according to the gate voltage variation.

• Advances in nano research
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• 제10권5호
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• pp.415-422
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• 2021

Silicene, a 2D allotrope of silicon, is predicted to be a potential material for future transistor that might be compatible with present silicon fabrication technology. Similar to graphene, silicene exhibits the honeycomb lattice structure. Consequently, silicene is a semimetallic material, preventing its application as a field-effect transistor. Therefore, this work proposes the uniform doping bandgap engineering technique to obtain the n-type silicene nanosheet. By applying nearest neighbour tight-binding approach and parabolic band assumption, the analytical modelling equations for band structure, density of states, electrons and holes concentrations, intrinsic electrons velocity, and ideal ballistic current transport characteristics are computed. All simulations are done by using MATLAB. The results show that a bandgap of 0.66 eV has been induced in uniformly doped silicene with phosphorus (PSi₃NW) in the zigzag direction. Moreover, the relationships between intrinsic velocity to different temperatures and carrier concentration are further studied in this paper. The results show that the ballistic carrier velocity of PSi₃NW is independent on temperature within the degenerate regime. In addition, an ideal room temperature subthreshold swing of 60 mV/dec is extracted from ballistic current-voltage transfer characteristics. In conclusion, the PSi₃NW is a potential nanomaterial for future electronics applications, particularly in the digital switching applications.