• Korean Chemical Engineering Research
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• 제45권4호
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• pp.356-363
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• 2007

전계발광(EL) 소자 제조용 액상 페이스트 용액의 안정성은 사용한 안정화제의 종류 및 첨가량에 크게 영향을 받았으며, 본 실험에서 사용한 안정화제 중에서 Disperbyk-180이 형광체 액상 페이스트에 대하여 넓은 첨가량 범위에서 90일 이상의 안정성을 보였다. 안정화제 Disperbyk-180을 형광체 및 유전체 페이스트 용액에 첨가하여 인쇄 실험을 수행한 결과, 층분리 현상은 일어나지 않았으며, 균일도는 기존 사용 페이스트 보다 우수한 것으로 나타났고 인쇄 시 기포 발생과 점도 변화가 매우 작았다. 특히 형광체 페이스트의 경우 균일성과 휘도가 기존의 페이스트에 비하여 상당히 향상되었으며, ITO 기판과의 접착성도 우수하였다. 안정화제 Disperbyk-180이 첨가된 페이스트를 사용하여 제조한 EL 소자는 100 V, 400 Hz에서 $57.6cd/m^2$의 휘도를 나타내었으며, 주파수 변화에 따라서 급격한 휘도 변화는 나타내지 않았다. 또한 EL 소자의 수명을 측정한 결과 반감기는 1,250시간으로 외국에서 수입되어 시판되고 있는 페이스트를 사용한 경우와 유사한 수명을 나타내었다.

• 반도체디스플레이기술학회지
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• 제22권1호
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• pp.83-87
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• 2023

Y₂SiO₅ Powder based on silicon and yttrium is well known as powder phosphors due to their excellent sustainability and efficiency. A new electroluminescence device was fabricated with Y₂SiO₅:Eu³⁺ powder phosphors though a simple screen printing method. The powder-dispersed electroluminescence device consisted of the Y₂SiO₅:Eu³⁺ powder-dispersed phosphor layer and BaTiO₃-dispersed dielectric layer. The annealing temperature of the phosphor for the best powder electroluminescence performance was optimized to high temperature in ambient atmosphere though a solid-state reaction. The Eu³⁺ concentration for the best device performance was also investigated and furthermore, the thermal dependence of the electroluminescence intensity was investigated at the operating voltage at 100℃, which is the Curie temperature of the BaTiO₃ layer. And the intensity was exponentially increased with voltage and increased linearly with frequency.

• 대한의용생체공학회:의공학회지
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• 제28권6호
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• pp.756-767
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• 2007

For the combination of phosphor screens having various thicknesses and a photodiode array manufactured by complementary metal-oxide-semiconductor (CMOS) process, we report the observation of image-quality degradation under the irradiation of 45-kVp spectrum x rays. The image quality was assessed in terms of dark pixel signal, dynamic range, modulation-transfer function (MTF), noise-power spectrum (NPS), and detective quantum efficiency (DQE). For the accumulation of the absorbed dose, the radiation-induced increase both in dark signal and noise resulted in the gradual reduction in dynamic range. While the MTF was only slightly affected by the total ionizing dose, the noise power in the case of $Min-R^{TM}$ screen, which is the thinnest one among the considered screens in this study, became larger as the total dose was increased. This is caused by incomplete correction of the dark current fixed-pattern noise. In addition, the increase tendency in NPS was independent of the spatial frequency. For the cascaded model analysis, the additional noise source is from direct absorption of x-ray photons. The change in NPS with respect to the total dose degrades the DQE. However, with carefully updated and applied correction, we can overcome the detrimental effects of increased dark current on NPS and DQE. This study gives an initial motivation that the periodic monitoring of the image-quality degradation is an important issue for the long-term and healthy use of digital x-ray imaging detectors.

• Journal of Korean Vacuum Science & Technology
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• 제3권1호
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• pp.79-84
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• 1999

the photolithographic patterning on an indium-tin oxide (ITO) glass and the electro-phoretic deposition were combined for preparing the screen of the full-color field emission display(FED). the patterns with a pixel of 400$\mu\textrm{m}$ on the ITO-glass were made by etching the ITO with well-prepared etchant consisting of HCL, H2O, and HNO3. Electrophoretic method was carried out in order to deposit each spherical red (R), green(G), and blue (B) phosphor on the patterned ITO-glass. The process parameters such as bias voltage, salt concentration, and deposition time were optimized to achieve clear boundaries. It was found that the etching process of ITO combined with electrophoretic method was cost-effective, provided distinct pattern, and even reduced process steps compared with conventional processes. The application of reverse bias to the dormant electrodes while depositing the phosphors on the stripe pattern was found to be very critical for preventing the cross-contamination of each phosphor in a pixel.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.366-369
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• 2002

At present, the study of direct digital X-ray detector and indirect digital X-ray detector proceed actively. But it needs high thickness and high voltage in selenium for high ionization rate. Therefore, we carried out the study of electric characteristics of a-Se with additive ratio of Iodine in drafting study for developing Hybrid X -ray Sensor for complementing direct digital X -ray detector and indirect digital X-ray detector in this paper. On this, there are formed Amorphous selenium multi-layers by sticking phosphor layer$(Gd_{2}O_{2}S(Eu^{2+}))$ using optical adhesives of EFIRON Co. Amorphous selenium multi-layers having dielectric layer(parylene) has characteristics of low dark-current, high X-ray sensitivity. So we can acquired a enhanced signal to noise ratio. We make Amorphous selenium multi-layers with $30{\mu}m$ thickness on glass.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.416-419
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• 2002

There are being two prominent studying for Digital Radiography. Direct and Indirect method of Digital Radiography are announced for producing high quality digital image. The one is using amorphous selenium as photoconductor and the other is using phosphor layer as a light conversion. But each two systems have strength and weakness such as high voltage and blurring effect. In this study, we investigated the electrical characteristic of $multi-layer\left(CaWO_{4}+a-Se \right)$ as a photoconductor according to the changing arsenic composition ratio. This is a basic research for developing of Hybrid digital radiography which is a new type X-ray detector. The arsenic composition ratio of a-Se compound is classified into 7 different kinds which have 0.1%, 0.3%, 0.5%, 1%, 1.5%, 5%, 10% and were made test sample throught thermo-evaporation. The phosphor layer of $CaWO_4$ was overlapped on a-Se using EFIRON optical adhesives. We measured the dark and photo current about the test sample and compared the electrical characteristic of the net charge and signal-to-noise ratio. Among other things, test sample of compound material of 0.3% arsenic showed good characteristic of $2.45nA/cm^2$ dark current and $357.19pC/cm^2/mR$ net charge at $3V/{\mu}m$.

• 한국세라믹학회지
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• 제51권6호
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• pp.533-538
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• 2014

Today, silicon and epoxy resin are used as materials of conversion lenses for white LEDs on the basis of their good bonding and transparency in LED packages. But these materials give rise to long-term performance problems such as reaction with water, yellowing transition, and shrinkage by heat. These problems are major factors underlying performance deterioration of LEDs. In this study, in order to address these problems, we fabricated a conversion lenses using glass, which has good chemical durability and is stable to heat. The fabricated conversion lenses were applied to a remote phosphor type. In this experiment, the conversion lens for white LED was coated on a glass substrate by a screen printing method using paste. The thickness of the coated conversion lens was controlled during 2 or 3 iterations of coating. The conversion lens fabricated under high heat treatment temperature and with a thin coating showed higher luminance efficiency and CCT closer to white light than fabricated lenses under low heat treatment temperature or a thick coating. The conversion lens with $32{\mu}m$ coating thickness showed the best optical properties: the measured values of the CCT, CRI, and luminance efficiency were 4468 K, 68, and 142.22 lm/w in 20 wt% glass frit, 80 wt% phosphor with sintering at $800^{\circ}C$.

• 한국세라믹학회지
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• 제38권12호
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• pp.1085-1092
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• 2001

고효율 AC powder EL 소자를 초저가형과 저전력 소모형으로 분류하여 막의 두께와 제조된 유기결합제에 따라 스크린 프린팅법으로 제조하였다. 제조된 소자의 광전기적 특성을 평가하기 위하여 인가 주파수는 400Hz~1kHz, 인가 전압은 50~300 $V_{rms}$까지 변화시켜 휘도 및 전류밀도를 측정하였다. 주파수 및 전압공급원은 정현파 발생 장치로서 frequency generator를 이용하였다. 또한 휘도는 luminometer 의해 측정되었으며 전류밀도 측정을 위하여 multimeter를 사용하였다. 초저가형 AC powder EL 소자의 경우에는 가소제를 첨가하지 않고 발광층의 두께는 45~50$\mu\textrm{m}$이며 유전층의 두께는 약 10$\mu\textrm{m}$에서 43cd/$m^2$ 정도의 휘도와 20$\mu$A/$cm^2$정도의 전류밀도를 얻을 수 있었으며 저전력 소모형 AC powder EL 소자의 경우에는 15wt의 가소제 첨가하에 발광층의 두께는 45~50$\mu$m이며 유전층의 두께는 15~20$\mu$m에서 74cd/ $m^2$정도의 휘도와 30~40$\mu$A/ $m^2$정도의 전류밀도를 얻을 수 있었다. 또한 수명시간에 있어서 본 연구에서 제조한 AC powder EL 소자가 타사 제품보다 절대적으로 우수한 특성을 보였다.다.

• 대한기계학회논문집A
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• 제26권11호
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• pp.2297-2304
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• 2002

Two-dimensional and three-dimensional finite element methods have been used to analyze the deformation behavior of a shadow mask due to thermal and tension load. The shadow mask inside the Braun tube of a TV set has numerous slits through which the electron beams are guided to land on the designed phosphor of red, green or blue. Its thermal deformation therefore causes landing shift of the electron beam and results in decolorization of a screen. For the realistic finite element analysis, the effective thermal conductivity and the effective elastic modulus arc calculated, and then the shadow mask is modeled as shell without slits. Next a transient thermal analysis of the shadow mask is performed, wherein thermal radiation is a major heat transfer mechanism. Analysis of the resulting thermal deformation is followed, from which the landing shift of the electron beam is obtained. The present finite element scheme may be efficiently used to reduce thermal deformation of a shadow mask and in developing prototypes of a large screen flat TV.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.206-206
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• 2009

RF Magnetron Sputtering 방법을 통해 ZnS:Mn 박막 형광체를 증착한 다층 TFEL (Thin-Film Electroluminescent) Backlight 소자를 제작하였다. Alumina 기판 위에 Au 전극과 PMN 후막 유전체를 Screen printing 기법으로 층을 형성하였다. 그 위에 MgO 박막 유전체를 E-Beam 장비를 이용하여 증착 후, ZnS:Mn 박막 형광체를 50 W 의 저전력으로 약 8000 ${\AA}$ 두께로 증착하였다. 형광체는 Sputter 증착 시 Sulfur 부족 현상을 보상해주기 위해 ZnS:Mn (0.5%) Target 에 2 at % 의 Sulfur를 첨가하였으며, 상부 전극으로 사용할 ITO 는 DC Magnetron Sputter 를 이용하여 증착하였다. 어닐링 공정은 Air 분위기에서 급속 열처리 장치 (RTA, Rapid Thermal Annealing) 을 이용하여 600 $^{\circ}C$에서 20 분 진행하였다. 이러한 과정들을 통해 저전압 고휘도의 TFEL Backlight 소자를 제조할 수 있었다.