• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.438-438
• /
• 2011

White light-emitting diodes (LEDs), the so-called next-generation solid-state lighting, offer benefits in terms of reliability, energy-saving, maintenance, safety, lead-free, and eco-friendly. Recently, rare-earth-doped oxynitride or nitride compounds have attracted a great deal of interest as a photoluminescent material because of their unique luminescent property, especially for white LEDs applications. Ce doped ${\beta}$-SiAlON has been studied as a wavelength conversion phosphor in white LEDs thanks to its high absorption rates, high quantum efficiency, and excellent thermal stability. Previously researches were not enough to understand the detail mechanism and characteristics of ${\beta}$-SiALON. The bandgap structures and electronic structures were not exact due to limitation of calculation methods. In this study, to elucidate the Ce doping effect on the SiAlON system, accurate band structures and electronic structure of the Ce doped ${\beta}$-SiAlON was intensively investigated using density functional theory calculations. In order to get a better description of the band gaps, MBJLDA method were used. We have found a single Ce atom site in ${\beta}$-SiAlON super cell. Furthermore, the density of state, band structure and lattice constant were intensively investigated.

• 한국재료학회지
• /
• 제18권8호
• /
• pp.427-431
• /
• 2008

The mechanical property of a phosphore layer was investigated by measuring the resolution (LP/mm) and by positron annihilation spectroscopy and SEM. Image plate samples containing the phosphore layer were irradiated by X-rays in a hospital numerous times over a course of several years. The LP/mm values of a (Ba,Sr)FBr : Eu image plate irradiated by X-rays varied between 2.2 and 2.0 over a period of four years. Coincidence Doppler Broadening (CDB) positron annihilation spectroscopy was used to analyze defect structures. The S parameters of the samples from hospital use varied from 0.6219 to 0.6232. There was a positive relationship between the time of exposure to the X-rays and the S parameters. Most of the defects were found to have been generated by X-rays.

• 한국전기전자재료학회논문지
• /
• 제22권9호
• /
• pp.776-780
• /
• 2009

In this study, the opto-electric properties of EL devices with PMN dielectric layer with variation of firing tempereature were investigated. For the PMN dielectric layer process, the paste was prepared by optimization of quantitative mixing of PMN powder, $BaTiO_3$, Glass Frit, $\alpha$-Terpineol and ethyl cellulose. The EL device stack consists of Alumina substrate ($Al_2O_3$), metallic electrode (Au), insulating layer (manufactured PMN paste), phosphor layer (ELPP- 030, ELK) and transparent electrode (ITO), which is well structure as a thick film EL device. The phase transformation properties of PMN dielectric with various firing temperatures of $150^{\circ}C$ to $850^{\circ}C$ was characterized by XRD. Also the opto-electric properties of EL devices with different firing temperature were investigated by LCR meter and spectrometer. We found the best opto-electric property was obtained at the condition of $550^{\circ}C$ firing which is 3432.96 $cd/m^2$ at 1948.3 pF Capacitance, 40 kHz Frequency, 40% Duty, Vth+330 V voltage.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 춘계학술대회 논문집 디스플레이 광소자 분야
• /
• pp.157-159
• /
• 2005

본 연구에서는 저온 액상반응법을 이용하여 활성제 Eu의 농도를 10wt%로 도핑하고 열처리를 각각 450, 700, $900^{\circ}C$로 1h 유지하여 $Gd_2O_3:Eu^{3+}$ 나노형광체를 합성하였다. 제조된 형광체의 결정화, 입자크기를 XRD, BET로 분석하였고, 이들이 발광 휘도에 미치는 영향을 확인하였다. 또한 합성된 형광체의 PL(photoluminescence) 특성을 알아보기 위해 여기파장 254nm 의한 발광스펙트럼, 611nm에 의한 여기스펙트럼을 조사하였다. 발광 특성은 611nm에서 주 peak을 갖는 $Eu^{3+}$ 이온에 의한 $^5D_0-^7F_{J(J=0,1,2)}$ 전이에 기인된 전형적인 Red 형광체의 특성을 나타냈고, 입자크기는 평균 20-60nm 정도이고, 발광강도는 열처리 온도가 증가함에 따라 향상되었다.

• 한국방사선학회논문지
• /
• 제3권4호
• /
• pp.35-38
• /
• 2009

최근 의료영상분야에서 형광체와 광도전체 물질을 이용한 디지털 평판형 X선 영상검출기가 폭넓게 이용되고 있다. 본 연구는 CsI:Na 형광체층과 광민감도가 우수한 비정질 셀레늄(a-Se)층의 이중 접합구조로 구성된 변환구조 설계를 위한 몬테카를로 시뮬레이션과 X선에 대한 광학적 및 전기적 반응특성을 조사하였다. 먼저 CsI:Na의 발광스펙트럼과 a-Se의 광흡수 스펙트럼을 측정하여 X선에 의한 신호 변환특성을 분석하였다. 또한, 인가전기장의 함수에 따른 X선 민감도을 측정하여 상용화된 a-Se($500{\mu}m$)의 직접변환 검출기와 비교 평가하였다. 측정결과로부터, $10V/{\mu}m$에서 CsI:Na($180{\mu}m$)/a-Se($30{\mu}m$) 변환센서의 X선 민감도는 $7.31nC/mR-cm^2$ 이고, a-Se($500{\mu}m$) 검출기는 $3.95nC/mR-cm^2$로 약 2배 정도 높은 값을 보였다.

• 한국자기학회지
• /
• 제15권4호
• /
• pp.246-249
• /
• 2005

플라즈마 디스플레이(Plasma Display Panel: PDP)용 청색 형광체인 $CaMgSi_{2}O_6:Eu^{2+}(CMS:Eu^{2+})$를 고상반응(sold-state reaction)법으로 합성하였다. 합성한 재료를 실온에서부터 $1,100^{\circ}C$까지 열처리하여 photoluminescence(PL)와 EPR 측정으로 열적 안정성을 연구하였다. $CMS:Eu^{2+}$ 형광체를 대기 분위기 하에서 상온에서부터 $700^{\circ}C$까지 열처리하였을 때 PL의 변화는 없었으나, $700^{\circ}C$ 이상의 온도에서 열처리 하였을 때는 PL의 감소를 나타내었다. $700^{\circ}C$까지 PL의 안정된 거동을 보이는 것은 구조적으로 안정된 12 면체를 하고 있는 $Ca^{2+}$ 이온의 일부를 $Eu^{2+}$ 이온이 점유하고 있어 $Eu^{2+}$의 원자가 변화에 영향을 미치지 못했으나, $700^{\circ}C$이상의 PL의 감소는 $Eu^{2+}$에서 $Eu^{3+}$의 산화에 의한 것이라는 것을 EPR 흡수세기의 변화로부터 알 수 있었다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.281-281
• /
• 2014

The field emission properties of GaN are reported in the present study. To be a good field emitter, it requires a low work function, high aspect ratio, and strong mechanical stability. In the case of GaN, it has a quite low work function (4.1eV) and strong chemical/mechanical/thermal stabilities. However, so far, it was difficult to fabricate vertical GaN nanostructures with a high aspect ratio. In this study, we successfully achieved vertically well aligned GaN nanostructures with chemical vapor-phase etching methods [1] (Fig. 1). In this method, we chemically etched the GaN film using hydrogen chloride and ammonia gases at high temperature around $900^{\circ}C$. This process effectively forms vertical nanostructures without patterning procedure. This favorable shape of GaN nanostructures for electron emitting results in excellent field emission properties such as a low turn-on field and long term stability. In addition, we observed a uniform fluorescence image from a phosphor film attached at the anode part. The turn-on field for the GaN nanostructures is found to be about $0.8V/{\mu}m$ at current density of $20{\mu}A$/cm^2. This value is even lower than that of typical carbon nanotubes ($1V/{\mu}m$). Moreover, threshold field is $1.8V/{\mu}m$ at current density of $1mA$/cm^2. The GaN nanostructures achieved a high current density within a small applied field range. We believe that our chemically etched vertical nanostructures are the promising structures for various field emitting devices.

• 조명전기설비학회논문지
• /
• 제23권12호
• /
• pp.23-30
• /
• 2009

LED조명장치는 자동차분야, 항공, 디스플레이, 전송장치 그리고 특수조명등의 응용장치로의 활용이 증가하고 있다. 일반적으로 고출력 RGB 멀티칩 LED는 표시용이나 경관조명용 또는 감성조명용으로 적용되고 백색 LED는 표시용 조명에서 최근 들어 일반조명용으로 적용되고 있으며, 고출력 백색 LED의 출시와 광효율의 증가는 이를 더욱 가속화하고 있다. 본 논문에서는 백색 LED와 RGB 멀티칩 LED 조명장치를 동일한 사양으로 제작하여 물리적, 전기적, 광학적 조명특성을 분석하여 향후 LED조명시스템의 제작에 정량적 데이터를 제공하고자 한다. 이를 위해 LED의 주요한 물리적 특성인 방열특성에 대한 성능분석, 전기적 특성의 분석을 위한 전력 및 드라이브 효율에 대한 성능분석을 수행하였고 조명특성을 위한 연색성, 배광특성, 광효율을 측정하였다. 백색 LED와 RGB 멀티칩 LED 조명장치를 활용한 응용장치의 적용방법을 확립하고 나아가 다양한 조명시스템에 LED 조명장치를 적용하는데 참고가 되는 기초 데이터를 제시하고자 한다.

• 한국재료학회지
• /
• 제21권12호
• /
• pp.644-649
• /
• 2011

[ $A_{3-2x/3}Al_{1-z}In_{z}O_4F:Eu_x^{3+}$ ](A = Ca, Sr, Ba, x = -0.15, z = 0, 0.1) oxyfluoride phosphors were simply prepared by the solid-state method at $1050^{\circ}C$ in air. The phosphors had the bright red photoluminescence (PL) spectra of an $A_{3-2x/3}Al_{1-z}In_{z}O_4F$ for $Eu^{3+}$ activator. X-ray diffraction (XRD) patterns of the obtained red phosphors were exhibited for indexing peak positions and calculating unit-cell parameters. Dynamic excitation and emission spectra of $Eu^{3+}$ activated red oxyfluoride phosphors were clearly monitored. Red and blue shifts gradually occurred in the emission spectra of $Eu^{3+}$ activated $A_3AlO_4F$ oxyfluoride phosphors when $Sr^{2+}$ by $Ca^{2+}$ and $Ba^{2+}$ ions were substituted, respectively. The concentration quenching as a function of $Eu^{3+}$ contents in $A_{3-2x/3}AlO_4F:Eu^{3+}$ (A = Ca, Sr, Ba) was measured. The interesting behaviors of defect-induced $A_{3-2x/3}Al_{1-z}In_{z}O_{4-{\alpha}}F_{1-{\delta}}$ phosphors with $Eu^{3+}$ activator are discussed based on PL spectra and CIE coordinates. Substituting $In^{3+}$ into the $Al^{3+}$ position in the $A_{3-2x/3}AlO_4F:Eu^{3+}$ oxyfluorides resulted in the relative intensity of the red emitted phosphors noticeably increasing by seven times.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.184-184
• /
• 2012

Recently, InGaN/GaN multi-quantum well grown on GaN pyramid structures have attracted much attention due to their hybrid characteristics of quantum well, quantum wire, and quantum dot. This gives us broad band emission which will be useful for phosphor-free white light emitting diode. On the other hand, by using quantum dot emission on top of the pyramid, site selective single photon source could be realized. However, these structures still have several limitations for the single photon source. For instance, the quantum efficiency of quantum dot emission should be improved further. As detection systems have limited numerical aperture, collection efficiency is also important issue. It has been known that micro-cavities can be utilized to modify the radiative decay rate and to control the radiation pattern of quantum dot. Researchers have also been interested in nano-cavities using localized surface plasmon. Although the plasmonic cavities have small quality factor due to high loss of metal, it could have small mode volume because plasmonic wavelength is much smaller than the wavelength in the dielectric cavities. In this work, we used localized surface plasmon to improve efficiency of InGaN qunatum dot as a single photon emitter. We could easily get the localized surface plasmon mode after deposit the metal thin film because lnGaN/GaN multi quantum well has the pyramidal geometry. With numerical simulation (i.e., Finite Difference Time Domain method), we observed highly enhanced decay rate and modified radiation pattern. To confirm these localized surface plasmon effect experimentally, we deposited metal thin films on InGaN/GaN pyramid structures using e-beam deposition. Then, photoluminescence and time-resolved photoluminescence were carried out to measure the improvement of radiative decay rate (Purcell factor). By carrying out cathodoluminescence (CL) experiments, spatial-resolved CL images could also be obtained. As we mentioned before, collection efficiency is also important issue to make an efficient single photon emitter. To confirm the radiation pattern of quantum dot, Fourier optics system was used to capture the angular property of emission. We believe that highly focused localized surface plasmon around site-selective InGaN quantum dot could be a feasible single photon emitter.