• 설비공학논문집
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• 제23권3호
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• pp.188-193
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• 2011

For a long time work or study, pendent task lighting system prepared with phosphor luminescent film LED was developed for eye protection and working efficiency improvement. Developed lighting system was used together with pendent and ambient lighting. Such as, we made comfortable lighting environment system. Evaluation for developed lighting system, that had proceeded to Mock-up test and subjective evaluation. Also It had proceeded that lighting environment analyzed and compatibility valuation of installation. In subjective evaluation, the students have expressed themselves satisfied to phosphor luminescent film LED lighting system. In Mock-up test, It is not problem to intensity of illumination, luminance and color temperature. Therefore, developed LED lighting system was installed at the Daegu apartment. It is having a P.O.E study progress to phosphor luminescent film LED lighting system.

• 한국재료학회지
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• 제16권3호
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• pp.145-150
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• 2006

Various colors of light emitting diodes(LED) and four-band white light sources are obtained using a violet LED and various phosphor films. $BaMg_2Al_{16}O_{27}:Eu\;(blue),\;SrGa_2S_4:Eu\;(green),\;and\;Eu(TTA)_3(PTA)$ (red) phosphors are dispersed in poly-vinyl-alcohol aqueous solutions, and phosphor films are prepared by coating the suspensions to PET film. The narrow band emission of $Eu(TTA)_3(PTA)$ phosphor has excellent red luminescent property for four-band white light excited by the violet LED.

• 한국재료학회지
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• 제15권8호
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• pp.548-553
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• 2005

Trivalent cerium$(Ce^{3+})$ activated YAG (yttrium aluminum garnet, $Y_3Al_5O_{12})$) thin films phosphor were deposited on quartz glass substrates by rf magnetron sputtering. The effects of sputtering parameters, annealing atmosphere, and substrates on growing behaviors and luminescent properties were investigated. The sputtering parameters were $O_2/(Ar+O_2)$ gas ratio, rf power, and deposition time. XRD (X-ray diffractometery) spectra exhibited that as-deposited films were amorphous, while they were transformed to the crystalline phases by post-annealing. The crystallinity and the atomic ratio strongly depended on the sputtering gas ratio $O_2/(Ar+O_2)$. High quality YAG:Ce thin films could be obtained at the gas ratio of $50\%$ oxygen. After annealing process, PL (Photoluminescence) spectra excited at 450nm showed a yellow single band at 550nm. The films deposited at the sputtering gas ratio of 50% oxygen exhibited the highest PL intensity.

• 센서학회지
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• 제11권1호
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• pp.60-65
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• 2002

$ZnGa_2O_4$박막 형광체는 기판 온도 $550^{\circ}C$, 산소 분압 100mTorr에서 Si(100) 기판 위에 펄스레이저 증착법을 이용하여 증착시켰고, 이렇게 증착되어진 박막을 $600^{\circ}C$와 $700^{\circ}C$에서 후 열처리하여 발광 특성을 조사하였다. X-선 회절 실험 결과, 후열처리 온도를 증가시킴에 따라서 $Ga_2O_3$ 상이 나타남을 확인할 수 있었다. 발광 스펙트럼은 460nm에서 최고 피크값을 나타내었으며. 350에서 600nm까지 갖는 넓은 밴드의 발광 특성을 나타내었다. 후열처리에 따른 $ZnGa_2O_4$ 박막은 다른 형태의 발광 강도와 grain 크기를 나타내었다.