• Korean Journal of Optics and Photonics
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• v.25 no.5
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• pp.254-261
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• 2014

Two types of white light-emitting diodes (LEDs) with different phosphor structures were fabricated and compared in terms of their optical characteristics. Their spectroscopic properties were analyzed as a function of temperature, from room temperature to $80^{\circ}C$. The temperature dependence of the luminance and the color coordinates showed that the decrease in luminance and change in the color coordinates of the remote-phosphor type LED were much smaller compared to the conventional white LED. These improvements were attributed to the decrease in phosphor temperature, due to the distance between the LED chip and the phosphor layer, as well as to the reduced absorption by the LED chip of the light emitted from the phosphor layer.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1797-1799
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• 1999

In this paper, to implement the electrical equivalent modeling of powder electroluminescent device, capacitate equation of device was chosen. The conventional structure device which have dielectric and phosphor layer between electrodes, and the single emission structure device which means that dielectric and phosphor were mixed between electrodes, were investigated. As a result, It was possible to make the equation that is transferred capacitance to phosphor layer, and using measured brightness efficiency and conductivity of devices was calculated.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1145-1148
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• 2008

The present status and trend of oxide phosphor thin-film development for thin-film electroluminescent (TFEL) device application are presented in this paper. Recently, several newly developed types of bendable or bendable see-through oxide TFEL lamps have been fabricated using the TFEL technology with a newly developed bendable ceramic sheet, glass sheet or sapphire sheet substrate, which has become available on the market. Stable operation at high temperatures was obtained in double-insulating-layer-type TFEL lamps fabricated with a $Zn_2Si_{0.6}Ge_{0.}4O_4$:Mn thin-film emitting layer forming on translucent or transparent bendable sheet substrates.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1255-1257
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• 1998

In this study,$ 5{\times}5$ dot-matrix display was implemented with powder electroluminescent device (PELD). Generally PELD which have a luminance from powder phosphor with electric field, inserted phosphor and dielectric layer between electrodes is basic structure. To make high brightness PELD compared to conventional device, new type of PELD was proposed as follows. New PELD had only one layer, which was mixed phosphor (ZnS:Cu) and dielectric (BaTiO3) material appropriately between electrodes. To compare and estimate the conventional and new type of PELD, the EL spectrum, transferred charge density, brightness and decay time was measured. As above result, we fabricated a hish brightness $ 5{\times}5$ dot-matrix display with new type of PELD. Its brightness was 6400 $cd/m^2$ at 200 V, 400Hz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.391-394
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• 1998

Electroluminescence is the light emission obtained by an electrical excitation energy passing through a phosphor under an applied high electrical field. EL are paid much attention on flat panel display as a backlight and indicator, which are divided into ACPRL(alternating-current powder electroluminescent) and ACTFEL(alternating-current powder electroluminescent). In this paper, Electric and emission properties on ACPEL are investigated based on ZnS:Cu phosphor. The basic structure on this is ITO glass/phosphor/insulator/ backelectrode, CR-M which has high efficiency on thermal properties and dielectric Properties was introduced and BaTiO$_3$ as a insulating layer in order to increase app1ied electric field on phosphor. Changing on Dielectric and emission Properties was caused by a different viscosity of binder which filled on space between phosphor particle. 60cd/$m^2$ under 60V, 2kHz sinusoidal was gotten from ACPELD prepared in this work.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.9
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• pp.443-448
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• 2002

The degradation characteristics of R, G, B phosphor layers in AC-PDP, which is due to the discharge of plasma, are still unknown. For the successful commercialization of AC-PDP, the degradation of phosphor layers, caused by the plasma discharge must be investigated and improved. In this paper, the degradation properties of phosphor layers in AC-$PDP_S$ are investigated. It takes long time to investigate the degradation in real condition, so that the device for accelerating the degradation is devised. To prove the performance of the device, the visible emission characteristics of phosphor layers and discharge with the environmental temperature are examined. As a result, it is shown that the phosphor layers are easily degraded when the discharge is sustained under high environmental temperature condition. After accelerating the degradation of blue Phosphor layer((Ba,Eu)Mg$AI_10$$O_17$) for 48 hours, its luminance decreases about 38 % and the corresponding color purity deteriorates severely.

• Journal of the Korean institute of surface engineering
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• v.41 no.4
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• pp.169-173
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• 2008

The objective of this study is to coat the $SiO_2$ layer uniformly on the ZnS:Cu phosphors by using Sol-Gel method. From results of SEM micrographs observation, XRD and XPS analysis, it could be confirmed that $SiO_2$ layer was relatively well coated on ZnS:Cu particles. $Ag_2S$ was used as a decoding chemical to analyze the dense and uniform coating performance of $SiO_2$ layer on phosphor particles. It could be concluded that phosphors synthesized from our two step replacement method showed strong blue peak comparing to other method and rather weak green peak also. Obtained particle size of phosphors were about 20m diameter. Luminescence properties of the phosphors were examined by photoluminescence spectra at the excitation wavelength of 270 nm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.328-328
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• 2007

Large area matrix-addressed image detectors are a recent technology for x-ray imaging with medical diagnostic and other applications. The imaging properties of x-ray pixel detectors depend on the quantum efficiency of x-rays, the generated signal of each x-ray photon and the distribution of the generated signal between pixels. In a phosphor coated detector the light signal is generated by electrons captured in the phosphor screen. In our study we simulated the lateral spread distributions for phosphor coupled detector by Monte Carlo simulations. Most simulations of such detectors simplify the setup by only taking the conversion layer into account neglecting behind. The Monte Carlo code MCNPX has been used to simulate the complete interaction and subsequent charge transport of x-ray radiation. This has allowed the analysis of charge sharing between pixel elements as an important limited factor of digital x-ray imaging system. The parameters are determined by lateral distribution of x-ray photons and x-ray induced electrons. The primary purpose of this study was to develop a design tool for the evaluation of geometry factor in the phosphor coupled optical imaging detector. In order to evaluate the spatial resolution for different phosphor material, phosphor geometry we have developed a simulation code. The developed code calculates the energy absorption and spatial distribution based on both the signal from the scintillating layer and the signal from direct detection of x-ray in the detector. We show that internal scattering contributes to the so-called spatial resolution drop of the image detector. Results from the simulation of spatial distribution in a phosphor pixel detector are presented. The spatial resolution can be increased by optimizing pixel size and phosphor thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.27-30
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• 2002

Photoconductor for direct detection flat-panel imager present a great materials challenge, since their requirements include high X -ray absorption, ionization and charge collection, low leakage current and large area deposition. Selenium is practical material. But it needs high thickness and high voltage in selenium for high ionization rate. We report comparative studies of detector sensitivity. One is an a-Se with $70{\mu}m$ thickness on glass. The other has hybrid layer of depositting ZnS phosphor with $100{\mu}m$ on a-Se. The leakage current of hybrid is similar to it of a-Se, but photocurrent is lager than a-Se. Both of them have high spatial resolution, but hybrid has higher sensitivity than a-Se at comparable bias voltage.

• Nuclear Engineering and Technology
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• v.33 no.5
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• pp.514-525
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• 2001

Optimum characteristics of digital X-ray sensor components were analyzed to develop intra- oral dental digital X-ray image sensor using indirect method. Parametric analysis was carried out to optimize the phosphor thickness and the fiber optic plate (FOP) coupling to charge coupled device (CCD). X-ray absorption and light diffusion in the phosphor layer were analyzed by the Monte Carlo method. Real time X-ray image was obtained with prototype X- ray image sensor using general CCD camera with 1∼10 Ip/mm resolution. It has been previously shown that large resolution degradation in X-ray images was caused by miss alignment of FOP to CCD and optical adhesive selection. In this study, we reported that X-ray image quality was greatly improved by using optimized characteristics of alignment device and phosphor thickness.