• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

• Journal of the korean academy of Pediatric Dentistry
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• v.27 no.4
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• pp.524-534
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• 2000

Deciduous teeth can be extracted for two reasons, one due to the physiologic resorption and the other by the inflammation at the apex after traumatic injury. Physiologic resorption may be different from pathologic resorption in timing and mechanism. Therefore we resumed the different features of physiologic and pathologic resorption root surfaces. Many previous studies showed micromorphology of resorbed surface of roots of deciduous teeth. But, few studies compared physiological and pathological root resorption surfaces. In this study, we carefully observed microscopic morphologies of those two different root surfaces by scanning electron microscope and histologic features by light microscope. The resultant differences between physiologic and pathologic resorption surfaces of deciduous teeth were as follows: 1. The morphology of pathologic resorption lacunae due to inflammation varied in size and shape with irregular boundaries compared with the physiologic areas from scanning electron microscope observations. 2. From light microscope observations, several large resorption fossae containing numerous resorption lacunae were found, whereas the resorption lacunae were irregular in shape with pathologic resorption surface. 3. Numerous multinucleated giant cells were closely attached to the physiologic resorption lacunae, whereas several kinds of mesenchymal cells with numerous inflammatory cells were found in the areas adjacent to the pathologic resorption surface. 4. Light microscope findings showed that compensating cementum formation took place along some of the areas of inflammatory dentinal resorption. In conclusion, several morphological differences were present between physiologic and pathologic root resorption surfaces of human deciduous teeth. The future studies should include cytochemistry to clarify the cellular roles in resorption process observations of pulpal surfaces of coronal and radicular dentin to and the changes that occur in each phase of human deciduous tooth resorption.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.77-77
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• 2000

Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.

• Geophysics and Geophysical Exploration
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• v.19 no.4
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• pp.212-219
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• 2016

The development of more advanced geophysical exploration techniques is necessary because the orebodies as yet discovered are increasingly changing in characteristics from shallow/high-grade to deep/low-grade. In this work, laboratory measurement of physical properties of rock samples and a field survey and interpretation of spectral induced polarization (SIP) have been conducted in a skarn metallic deposit, Gagok mine. The purpose of this study is that the applicability of SIP in the exploration of skarn metallic deposits is verified by the comprehensive interpretation between SIP characteristics of rocks obtained from the laboratory measurements and inverted survey results from the field data. In order to understand the SIP characteristics of each lithology, the data of eighty nine rock samples utilized in the previous studies were revaluated. The field survey was carried out using frequency of 0.25 Hz along a survey line designed for intersecting lithological boundaries and evaluating mineralized zones. The mineralized rocks were more conductive (low-resistivity) and capacitive (high-chargeability or strong-phase) than other rocks. Thus, SIP can be one of the very useful tools for the mineral exploration of the skarn deposits.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.1
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• pp.32-36
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• 2021

This study was investigated in carbon diffusion behavior of laser-carburized TiZrN coating layer and the changes of mechanical properties. The carbon paste was deposited on TiZrN coatings, and the laser was irradiated to carburize into the coatings. The XRD peak corresponding to the (111) plane shifted to a lower angle after the carburization, showing the lattice expansion by doped carbon. The decreased grain size implied the compression by the grain boundary diffusion of carbon. The XPS spectra for the bonding states of carbon was analyzed that carbon was substitute to nitrogen atoms in TiZrN, as carbide, through the thermal energy of laser. In addition, the combination of sp2 and sp3 hybridized bonds represented the formation of an amorphous carbon. The cross-sectional TEM image and the inverse FFT of the TiZrN coating after carburizing were observed as the wavy shape, confirming the amorphous phase located in grain boundaries. After the carburization, the hardness increased from 34.57 GPa to 38.24 GPa, and the friction coefficient decreased by 83 %. In particular, the ratio of hardness and elastic modulus (H/E) which is used as an index of the elastic recovery, increased from 0.11 to 0.15 and the wear rate improved by 65 %.

• Korean Journal of Materials Research
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• v.33 no.10
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• pp.393-399
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• 2023

In this study, changes in the microstructure and mechanical properties of cast and extruded Al-2Li-1Ce alloy materials were investigated as the Mg content was varied. The density decreased to 2.485, 2.46 and 2.435 g/cm³ when the Mg content in the Al-2Li-1Ce alloy was increased to 2, 4 and 6 wt%, respectively. Intermetallic compounds of Al₁₁Ce₃ were observed in all alloys, while the β-phase of Al₃Mg₂ was observed in alloys containing 6 wt% of Mg. In the extruded material, with increasing Mg content the average grain size decreased to 84.8, 71.6 and 36.2 ㎛, and the fraction of high-angle grain boundaries (greater than 15°) increased to 82.8 %, 88.6 %, and 91.8 %, respectively. This occurred because the increased Mg content promotes dynamic recrystallization during hot extrusion. Tensile test results showed that as the Mg content increased, both the yield strength and tensile strength increased. The yield strength reached 86.1, 107.3, and 186.4 MPa, and the tensile strength reached 215.2, 285, and 360.5 MPa, respectively. However, it is worth noting that the ductility decreased to 27.78 %, 25.65 %, and 20.72 % as the Mg content increased. This reduction in ductility is attributed to the strengthening effect resulting from the increased amount of dissolved Mg, and grain refinement due to dynamic recrystallization.

• Korean Journal of Materials Research
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• v.34 no.4
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• pp.185-193
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• 2024

In this study, NASICON-type Li_1+XGa_XTi_2-X(PO₄)₃ (x = 0.1, 0.3 and 0.4) solid-state electrolytes for all-solid-state batteries were synthesized through the sol-gel method. In addition, the influence on the ion conductivity of solid-state electrolytes when partially substituted for Ti⁴⁺ (0.61Å) site to Ga³⁺ (0.62Å) of trivalent cations was investigated. The obtained precursor was heat treated at 450 ℃, and a single crystalline phase of Li_1+XGa_XTi_2-X(PO₄)₃ systems was obtained at a calcination temperature above 650 ℃. Additionally, the calcinated powders were pelletized and sintered at temperatures from 800 ℃ to 1,000 ℃ at 100 ℃ intervals. The synthesized powder and sintered bodies of Li_1+XGa_XTi_2-X(PO₄)₃ were characterized using TG-DTA, XRD, XPS and FE-SEM. The ionic conduction properties as solid-state electrolytes were investigated by AC impedance. As a result, Li_1+XGa_XTi_2-X(PO₄)₃ was successfully produced in all cases. However, a GaPO₄ impurity was formed due to the high sintering temperatures and high Ga content. The crystallinity of Li_1+XGa_XTi_2-X(PO₄)₃ increased with the sintering temperature as evidenced by FE-SEM observations, which demonstrated that the edges of the larger cube-shaped grains become sharper with increases in the sintering temperature. In samples with high sintering temperatures at 1,000 ℃ and high Ga content above 0.3, coarsening of grains occurred. This resulted in the formation of many grain boundaries, leading to low sinterability. These two factors, the impurity and grain boundary, have an enormous impact on the properties of Li_1+XGa_XTi_2-X(PO₄)₃. The Li_1.3Ga_0.3Ti_1.7(PO₄)₃ pellet sintered at 900 ℃ was denser than those sintered at other conditions, showing the highest total ion conductivity of 7.66 × 10^-5 S/cm at room temperature. The total activation energy of Li-ion transport for the Li_1.3Ga_0.3Ti_1.7(PO₄)₃ solid-state electrolyte was estimated to be as low as 0.36 eV. Although the Li_1+XGa_XTi_2-X(PO₄)₃ sintered at 1,000 ℃ had a relatively high apparent density, it had less total ionic conductivity due to an increase in the grain-boundary resistance with coarse grains.

• Journal of Biomedical Engineering Research
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• v.25 no.4
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• pp.261-268
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• 2004

Osteoporosis is a clinical condition in which the amount of bone tissue is reduced and the likelihood of fracture is increased. It is known that the electrical property of the bone is related to its density, and, in particular, the electrical resistance of the bone decreases as the bone loss increases. This implies that the electrical property of bone may be an useful parameter to diagnose osteoporosis, provided that it can be readily measured. The study attempted to evaluate the electrical conductivity of bone using a technique of electrical impedance tomography (EIT). It nay not be easy in general to get an EIT for the bone due to the big difference (an order of 2) of electrical properties between the bone and the surrounding soft tissue. In the present study, we took an adaptive mesh regeneration technique originally developed for the detection of two phase boundaries and modified it to be able to reconstruct the electrical conductivity inside the boundary provided that the geometry of the boundary was given. Numerical simulation was carried out for a tibia phantom, circular cylindrical phantom (radius of 40 mm) inside of which there is an ellipsoidal homeogenous tibia bone (short and long radius are 17 mm and 15 mm, respectively) surrounded by the soft tissue. The bone was located in the 15 mm above from the center of the circular cross section of the phantom. The electrical conductivity of the soft tissue was set to be 4 mS/cm and varies from 0.01 to 1 ms/cm for the bone. The simulation considered measurement errors in order to look into its effects. The simulated results showed that, if the measurement error was maintained less than 5 %, the reconstructed electrical conductivity of the bone was within 10 % errors. The accuracy increased with the electrical conductivity of the bone, as expected. This indicates that the present technique provides more accurate information for osteoporotic bones. It should be noted that tile simulation is based on a simple two phase image for the bone and the surrounding soft tissue when its anatomical information is provided. Nevertheless, the study indicates the possibility that the EIT technique may be used as a new means to detect the bone loss leading to osteoporotic fractures.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• Economic and Environmental Geology
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• v.34 no.6
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• pp.627-648
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• 2001

At least two distinct types of layering are present in the middle zone of the Skaergaard intrusion; alternating plagioclase-rich and pyroxene-rich, macro-rhythmic layers, and smaller scale, modally-graded, rhythmic layers. The macro-rhythmic layers are ubiquitous in the middle zone of the Layered Series, but are not observed in the lower and upper zone of the Layered Series or in the wall or roof tories of the intrusion. They range from 0.3 to 17.3 m in thickness, have sharp upper and lower boundaries, and can be traced laterally for over 2 ]fm in outcrop. Although individual macrorhythmic layers are not internally graded, many contain smaller-scale, modally-graded layers. Modally-graded. rhythmic layers are a common feature of the Layered Series but are not abundant in either the Upper Border Series or the Marginal Border Series. They range in thickness from 1 to 50 cm and can be traced laterally in outcrop for up to 100 m. Their lateral termination ranges from abrupt to gradational, and they are often associated with cut and fill structures and crossbedding suggestive of current activity. They are characterized by sharp lower and gradational upper contacts, and by strong intra-layer modal grading with olivine, ilmenite, and magnetite concentrated at the base, pyroxene concentrated above the base, and plagioclase concentrated at the top. The layers are also grain-size graded with the maximum size for each phase occurring at the horizon in the layer where the phase is most abundant. Modally-graded, rhythmic layers in the middle zone of the Layered Series occur within both plagioclase-rich and pyroxene-rich macro-rhythmic layers.