• The Korean Journal of Food And Nutrition
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• v.30 no.2
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• pp.363-370
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• 2017

This study investigated the chemical composition of headspace gas from white-flowered lotus (Nelumbo nucifera Gaertner). Volatile flavor compositions of headspace from white-flowered lotus (floral leaf, stamen, flower stalk, stem) were investigated through the solid-phase microextraction method using polydimethylsiloxane-divinylbenzene fiber. The headspace was directly transferred to a gas chromatography-mass spectrometry. Sixty-three volatile flavor constituents were detected in the headspace of lotus floral leaves, and undecanoic acid (7.81%) was the most abundant component. Fifty-three volatile flavor constituents were detected in the headspace of lotus stamina, and isobutylidene phthalide (7.94%) was the most abundant component. Forty-four volatile flavor constituents were detected in the headspace of lotus flower stalks, and 3-butyl dihydrophthalide (11.23%) was the most abundant component. Fifty-nine volatile flavor constituents were detected in the headspace of lotus stems, and ligustilide (16.15%) was the most abundant component. The content of phthalides was higher in the headspace of flower stalks and stems, while alcohols and acids were the predominant compounds in lotus floral leaves.

• Journal of the Korean Ceramic Society
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• v.26 no.4
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• pp.479-486
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• 1989

According to the phase diagram, 6Bi2O3.GeO2 composition melts congruently at 93$0^{\circ}C$ and forms a stable ${\gamma}$-6Bi2O3.GeO2 crystal phase below the melting point. But when the melt of this composition was cooled at a rate 1-15$0^{\circ}C$/min without tapping by a glass rod or impurity addition, a metastable $\delta$-6Bi2O3.GeO2 crystal phase was formed. It is due to that as the nucleation energy barrier of $\delta$-6Bi2O3.GeO2 crystals, which have more open and defective structure, is lower than that of ${\gamma}$-6Bi2O3.GeO2 crystals. When impurities or ${\gamma}$-6Bi2O3.GeO2 crystals existed in the melt, stable ${\gamma}$-6Bi2O3.GeO2 crystal phase was formed at various cooling rate. It is because of that the impurities or the ${\gamma}$-6Bi2O3.GeO2 crystals role as a seed crystal and as a result the nucleation energy barrier of ${\gamma}$-6Bi2O3.GeO2 crystals is lowered.

• Journal of Industrial Technology
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• v.25 no.A
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• pp.157-162
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• 2005

In this study, the fabrication of PZT films was performed from a multilayer structure comprising $TiO_2$, $ZrO_2$ and PbO thin films prepared by rapid themal chemical vapor deposition(RTMOCVD). $TiO_2$, $ZrO_2$ and PbO are the component layers of oxide multilayer system for a single phase PZT thin film. The composition control of PZT thin film was done by the thickness control of individual component layer. The composition ratio of Pb:Ti:Zr with thickness were 1:0.94:0.55. Occurrence of a single-phase of PZT was initiated at around $550^{\circ}C$ and almost completed at $750^{\circ}C$ under the fixed time of 1hr. As the concentration of Pb increased, the roughness and crystallization in the film increased. From the as result of using XPS and TEM, the single phase formation through annealing is evident. The electrical properites of the prepared PZT thin film(Zr/Ti=40/60, 300 nm) on a Pt-coated substrate were as follow: dielectric constant ${\varepsilon}_r=475$, coercive field Ec=320 kV/cm, and remanant polarization $P_r=11{\mu}C/cm^2$ at an applied voltage of 18 V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.193-196
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• 2001

Single phase $CuInS_2$ thin film with the highest diffraction peak (112) at diffraction angle $(2\theta)$ of $27.7^{\circ}$ and the second highest diffraction peak (220) at diffraction angle $(2\theta)$ of $46.25^{\circ}$ was well made with chalcopyrite structure at substrate temperature of $70^{\circ}C$, annealing temperature of $250^{\circ}C$, annealing time of 60 min. The $CuInS_2$ thin film had the greatest grain size of $1.2{\mu}m$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that $CuInS_2$ thin film was 5.60 A and 11.12 A respectively. Single phase $CuInS_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type $CuInS_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of $CuInS_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type $CuInS_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, $3.0{\times}104cm^{-1}$ and 1.48 eV respectively. When Cu/In composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type $CuInS_2$ thin film was 821 nm, $6.0{\times}10^4cm^{-1}$ and 1.51 eV respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.193-196
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• 2001

Single phase CuInS$_2$ thin film with the highest diffraction peak (112) at diffraction angle (2$\theta$) of 27.7$^{\circ}$ and the second highest diffraction peak (220) at diffraction angle (2$\theta$) of 46.25$^{\circ}$ was well made with chalcopyrite structure at substrate temperature of 70 $^{\circ}C$, annealing temperature of 25$0^{\circ}C$, annealing time of 60 min. The CuInS$_2$ thin film had the greatest grain size of 1.2 ${\mu}{\textrm}{m}$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that CuInS$_2$ thin film was 5.60 $\AA$ and 11.12 $\AA$ respectively. Single phase CuInS$_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type CuInS$_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of CuInS$_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type CuInS$_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, 3.0x10 $^4$ $cm^{-1}$ / and 1.48 eV respectively. When CuAn composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type CuInS$_2$ thin film was 821 nm, 6.0x10$^4$ $cm^{-1}$ / and 1.51 eV respectively.

• The Korean Journal of Ceramics
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• v.1 no.1
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• pp.45-54
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• 1995

Four kinds of silicon nitride based ceramic materials have been hot pressed. Effect of the sintering additives on the phase transformation, microstructural development and mechanical properties was investigated. While sintering under the same condition a big difference among the microstructures of the specimens, they appeared alike if sintered to have a similiar $\alpha$-$\beta$ phase ratio. The specimen of the stoichiometric $\alpha$-$\beta$ sialon composition showed very limited amount of the intergranular glassy phase and a significant degree of the residual stress. It exhibited almost no strength degradation up to $1300^{\circ}C$, and the strength of the specimen degraded more as its composition deviated from the stoichiometry.

• Journal of the Korean Ceramic Society
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• v.31 no.12
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• pp.1443-1448
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• 1994

Pb(Mg1/3Nb2/3)O3-PbTiO3-BaTiO3 solid solution was formed by mixed-oxide method. The phase during formation was analysed by XRD and formation mechanism was investigated. While heat-treating Pb(Mg1/3Nb2/3)O3 composition, the first, Pb2Nb2O7 and Pb3Nb2O8 pyrochlore phases are formed, and finally Pb(Mg1/3Nb2/3)O3 perovskite phase with containing Pb3Nb4O13 pyrochlore phase is obtained at 80$0^{\circ}C$. When Pb(Mg1/3Nb2/3)O3 composition is modified with PbTiO3 which have strong ionic bonding and high tolerance factor, the amount of pyrochlore phase is decreased by increasing of stability in perovskite structure.

• The Korean Journal of Ceramics
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• v.1 no.2
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• pp.81-85
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• 1995

PST-series spcimens with stoichimetric and nonstoichimtric compositins were prepared and the effects of compositionl modification on phase formation and dielectric presponse were investigated. The phases formed on calcination were mainly perovskite and trace amount of phyrochlore(s), with an increase of the latter phase(s) as the composition became more ononstoichiometric. The sintered samples showed thermal hysteresis and diffuseness in phase transition with a small degree of frequency relaxation. Temperatures corresponding to maximum values of dielectric constant and loss were relatively insensitive to the composition change while the maximum values were very sensitive to that.

• Transactions of the Korean Society of Automotive Engineers
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• v.11 no.5
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• pp.15-21
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• 2003

The liquid phase LPG injection engine is a new technology to make good use of LPG as a clean energy. However, it is difficult to precisely control air/fuel ratio in the system because of variation of fuel composition, change of temperature and flash boiling injection mechanism. This study newly suggests an injector control logic for liquid phase LPG injection systems. This logic compensates a number of effects such as variations of density, stoichiometric air/fuel ratio, injection delay time, injection pressure, release pressure which is formed by flash boiling of fuel at nozzle exit. This logic can precisely control air/fuel ratio with only two parameters of intake air flow rate and injection pressure without considering fuel composition, fuel temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.8
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• pp.602-610
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• 2012

The powders for the $Na_xWO_3$ (x= 1 and 0.75) sputtering targets were synthesized by the calcination in reductive atmosphere. Near single-phase $NaWO_3$ and single-phase $Na_{0.75}WO_3$ powder targets were prepared. By using the targets, thin films of each composition were deposited by rf magnetron sputtering on the $SiO_2$ (100 nm)/Si substrates and annealed by RTP (rapid thermal processing) for crystallization. In the case of the $NaWO_3$ composition, single-phase $Na_xWO_3$ thin films, where x was believed to be slightly less than 1, were fabricated accompanying the Na-diffusion into the substrates during RTP. However, in the case of the $Na_{0.75}WO_3$ thin film preparation, it was unable to make single-phase thin films. From the phase formation behaviors of both powders and thin films, it was revealed that $Na_xWO_3$ with nonstoichiometric composition of x, which was slightly less than 1, was favorable. The good electrical conduction properties were obtained from the single-phase $Na_xWO_3$ thin films. Their electrical resistivities were as low as $7.5{\times}10^{-4}{\Omega}{\cdot}cm$.