• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.6
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• pp.477-480
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• 2010

In this study, we fabricate 3 wt% $Li_2CO_3$ doped $(Ba,Sr)TiO_3$ thick films on the Ag/Pd bottom electrode printed $Al_2O_3$ substrates for the LTCCs (low temperature co-fired ceramics) applications. From the X-ray diffraction analysis, 3 wt% $Li_2CO_3$ doped BST thick films on the Ag/Pd printed $Al_2O_3$ substrates, which sintered at $900^{\circ}C$, showed perovskite structure without any pyro phase. The dielectric properties of 3 wt% $Li_2CO_3$ doped BST thick films are measured from 1 kHz to 1 MHz. To investigate the electrical properties of 3 wt% $Li_2CO_3$ doped BST thick films, we employ the impedance spectroscopy. The complex impedance of 3 wt% $Li_2CO_3$ doped BST thick films are measured from 20 Hz to 1 MHz at the various temperatures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.170-173
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• 2001

Thin films of phase-pure perovskite (P $b_{0.72}$L $a_{0.28}$) $Ti_{0.93}$ $O_3$(PLT) were deposited in-situ onto Pt/Ti/ $SiO_2$/Si substrates by pulsed laser deposition. We have systematically investigated the variation of grain sizes depending on the process condition. Both in-situ annealing and ex-situ annealing treatments have been compared depending on the annealing time. Two-step process to grow (P $b_{0.72}$L $a_{0.28}$) $Ti_{0.93}$ $O_3$(PLT) films was adopted and verified to be useful to enlarge the grain size of the film and to enhance the leakage current characteristics. The grain sizes of PLT thin films were successfully controlled 260 to 350 nm by changing process parameters. Electrical properties including dielectric constant, ferroelectric characteristics, crystallization and leakage current of PLT thin films were shown to be strongly inf1uenced by grain size. Also PLT thin films on p-type(100) Si substrate will be fabricated by pulsed laser deposition technique using a Nd:YAG laser with different wavelengths of 355, 532 and 1064 nm. Effect of the variation of laser wavelength on dielectric properties will be discussed. Microstructural and electrical properties of the film were investigated by C-V measurement leakage current measurement and SEM.ent and SEM.

• Electrical & Electronic Materials
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• v.9 no.3
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• pp.251-258
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• 1996

Sol-Gel derived ferroelectric Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ thin films have been fabricated on Pt/Ti/ $SiO_{2}$/Si substrate. Two kinds of fast annealing methods, F-I (six times of intermediate and final annealing) and F-II(one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. As the annealing temperature was increased, high capacitance could be obtained, for instance, 2700.angs.-thick PZT thin film annealed at 680.deg. C had a capacitance value of approximately 20nF at 1kHz. In addition, it is found that the dielectric constant is a function of the perovskite phase fraction. In case of F-I method, PZT thin film had a remanent polarization(Pr) of 8-15.mu.C/c $m^{2}$ and a coercive field( $E_{c}$) of 35-44kV/cm according to annealing temperature, whereas PZT film fabricated by F-II method had as high as 24-25.mu.C/c $m^{2}$ and 48-59kV/cm, respectively. As a result of measuring Curie temperature, PZT thin film had a range of 460-480.deg. C by F-I method and more or less higher range of 525-530.deg. C by F-II method, which implied that different microstructures could cause the different Curie temperature. Through I-V measurement, leakage current of PZT thin film fabricated by F-I and F-II methods was 64nA/c $m^{2}$ and 2.2.mu.A/c $m^{2}$ in the electric field of 100kV/cm, respectively.y.y.y.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.682-685
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• 2002

The $0.96MgTiO_3-0.04SrTiO_3$ ceramics with $B_2O_3$(10wt%) were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature by XRD. According to the X-ray diffraction pattern of the $0.96MgTiO_3-0.04SrTiO_3$ ceramics with $B_2O_3$(10wt%), the ilmenite $MgTiO_3$ and perovskite $SrTiO_3$ structures were coexisted and secondary phase of the $MgTi_2O_5$ were appeared. In the case of $0.96MgTiO_3-0.04SrTiO_3+B_2O_3$(10wt%) ceramics sintered $1225^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 19.82, 62,735GHz, $-2.983ppm/^{\circ}C$, respectively.

• Korean Journal of Materials Research
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• v.14 no.11
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• pp.764-768
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• 2004

Perovskite Pb(Mn_{1/3}Sbu_{2/3})O_2-Pb(Zr,Ti)O_3\;(PMS-PZT) was prepared and ZnO doping effects on its piezoelectric properties were investigated. Pyrochlore phase was not identified in the PMS-PZT ceramics with $0\sim5\;mol\%$ ZnO sintered at $1100^{\circ}C$ for 2 hrs, and maximum sintered density of $7.92 g/cm^3$ was obtained. Piezoelectric charge constant and voltage constant increased to $359{\times}10^{-12}\;C/N\;and\;22.5{\times}10^{-13}\;Vm/N$, respectively, with increasing ZnO content. Mechanical quality factor reduced considerably with increasing ZnO content. When the ZnO content was 3 $mol\%$, electromechanical coupling factor and relative dielectric constant showed maximum values of $56\%$ and 1727, respectively. This should be evaluated by complicated variations of sintered density, tetragonality of lattice, grain size, and A-site vacancy generated by ZnO addition and $Zn^{2+}$ substitution.

• Korean Journal of Materials Research
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• v.14 no.10
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• pp.701-706
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• 2004

Bismuth layered structure ferroelectric thin films, La-substituted $Bi_{4}Ti_{3}O_{12}$ ($Bi_{1-x}La_{x}Ti_{3}O_{12}$, x=0.75, BLT) were prepared on the $Pt(111)/Ti/SiO_2/Si(100)$ substrates by a sol-gel spin coating process. The thin films were annealed in various conditions, i.e., oxygen, nitrogen and vacuum atmospheres for various annealing time. We investigated the annealing condition effects on the grain orientation and ferroelectric properties. The measured XRD patterns revealed that the BLT thin films showed only $Bi_{4}Ti_{3}O_{12}$-type phase with random orientation. $La^{3+}$ ion substitution for $Bi^{3+}$ ion in perovskite layers of $Bi_{4}Ti_{3}O_{12}$ decreased the degree of c-axis orientation and increased the remanent polarization ($2P_{r}$). The remanent polarization ($2P_{r}$) and the coercive field ($2E_{c}$) of the BLT thin film annealed at $650^{\circ}C$ for 5 min in oxygen atmosphere were $87{\mu}C/cm^2$ and 182 kV/cm, respectively, at an applied electric field of 240 kV/cm. For all of the BLT thin films annealed in various conditions, the fatigue resistance was shown. The improvement of ferroelectric properties with La substitution in $Bi_{4}Ti_{3}O_{12}$ could be attributed to the changes in space charge densities and grain orientation in the thin film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.506-510
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• 2012

In this study, lead-free $(Na_{0.465}K_{0.465}Bi_{0.07})(Nb_{0.93}Ti_{0.07})O_3-0.08MnO_2$ ceramics were fabricated by conventional mixed oxide method. Structural and electrical properties of lead-free $(Na_{0.465}K_{0.465}Bi_{0.07})(Nb_{0.93}Ti_{0.07})O_3-0.08MnO_2$ ceramics with the variation of sintering temperature were investigated. As results of x-ray diffraction analysis, all specimens showed a typical polycrystalline perovskite structure without presence of the second phase. Sintered density increased with an increases of sintering temperature and the specimen sintered at $1,020^{\circ}C$ showed the maximum value of 4.5 $g/cm^3$. The average grain size of the $(Na_{0.465}K_{0.465}Bi_{0.07})(Nb_{0.93}Ti_{0.07})O_3-0.08MnO_2$ specimen sintered at $1,020^{\circ}C$ is about 0.83 ${\mu}m$. Electromechanical coupling factor, relative dielectric constant and dielectric loss of $(Na_{0.465}K_{0.465}Bi_{0.07})(Nb_{0.93}Ti_{0.07})O_3-0.08MnO_2$ specimens sintered at $1,020^{\circ}C$ were 0.252, 741 and 0.043% respectively.

• Journal of the Korean Ceramic Society
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• v.51 no.3
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• pp.208-217
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• 2014

$La_{0.8}Sr_{0.2}Ga_{0.8}Mg_{0.2-x}Zn_xO_{2.8}$(LSGMZ, X=0-0.05) was prepared using a solid state reaction method. Two secondary phases ($LaSrGaO_4$ and $LaSrGa_3O_7$) of powders were identified by X-ray diffraction analysis. The relative amount of these secondary phases depended on the calcination conditions (temperature and time) and Zn content. The sintering density of LSGMZ was enhanced by increasing the Zn content and calcination temperature at the low sintering temperatures ($1250-1300^{\circ}C$). The relationship between the sintering density of LSGMZ and the synthesis conditions was discussed considering the phase analysis results.

• Korean Journal of Materials Research
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• v.21 no.8
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• pp.468-475
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• 2011

[ $LaMeO_3$ ](Me = Cr, Co) powders were prepared using the polymeric precursor method. The effects of the chelating agent and the polymeric additive on the synthesis of the $LaMeO_3$ perovskite were studied. The samples were synthesized using ethylene glycol (EG) as the solvent, acetyl acetone (AcAc) as the chelating agent, and polyvinylpyrrolidone (PVP) as the polymer additive. The thermal decomposition behavior of the precursor powder was characterized using a thermal analysis (TG-DTA). The crystallization and particle sizes of the $LaMeO_3$ powders were investigated via powder X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and particle size analyzer, respectively. The as-prepared precursor primarily has $LaMeO_3$ at the optimum condition, i.e. for a molar ratio of both metal-source (a : a) : EG (80a : 80a) : AcAc (8a) inclusive of 1 wt% PVP. When the as-prepared precursor was calcined at $700^{\circ}C$, only a single phase was observed to correspond with the orthorhombic structure of $LaCrO_3$ and the rhombohedral structure of $LaCoO_3$. A solid-electrolyte impedance-metric sensor device composed of $Li_{1.5}Al_{0.5}Ti_{1.5}(PO_4)_3$ as a transducer and $LaMeO_3$ as a receptor has been systematically investigated for the detection of NOx in the range of 20 to 250 ppm at $400^{\circ}C$. The sensor responses were able to divide the component between resistance and capacitance. The impedance-metric sensor for the NO showed higher sensitivity compared with $NO_2$. The responses of the impedance-metric sensor device showed dependence on each value of the NOx concentration.

• Korean Journal of Materials Research
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• v.13 no.12
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• pp.846-849
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• 2003

Doping effect of various ions in Bi-layered ferroelectric $SrBi_2$$Nb_2$$O_{9}$ (SBN) ceramics was studied. Undoped SBN ceramic and SBN ceramics doped with $Ba^{2＋}$, $Pb^{2＋}$,$ Ca^{2＋}$ , $Bi^{3＋}$ , $La^{3＋}$ , $Ti^{4＋}$ , $Mo^{6＋}$ , and $W^{6＋}$ ions were made by a solid state reaction. Dielectric constants were measured with temperature. Ferroelectric transition temperature decreased with $Pb^{2＋}$ , $Ba^{2＋}$ , $La^{3＋}$ doping, but the transition temperature increased with $Ca^{2＋}$ , $Bi^{3＋}$ , $Ti^{4＋}$, $Mo^{6＋}$ , or$ W^{6＋}$ ionic doping. These results show that the ion size plays an important role in the ferroelectricity of SBN ceramic.