• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.5
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• pp.470-474
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• 1999

We have successfully grown <111>-oriented $(La,Sr)(Al,Ta)O_{3}\;(LSAT)$ mixed-perovskite single crystals and <0001>-oriented ${Ca_{8}La_{2}(PO_{4})}_{6}O_2$ (CLPA) single crystals with the apatite structure by the Czochralski method. The compositional and lattice parameter uniformity of the crystals are discussed in relation to the growth conditions. Since LSAT and CLPA single crystals have excellent lattice matching with GaN, they are promising as new substrates for the growth of high quality GaN epitaxial layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.304-307
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• 1999

The Mg($_{1-x}$ )S $r_{x}$Ti $O_3$(x=0.1,0.2,0.3) ceramics were prepared by the conventional mixed oxide method. The structural properties were investigated with calcining temperature and composition ratio by XRD and DT-TGA. Increasing the calcining temperature from 80$0^{\circ}C$ to 100$0^{\circ}C$, second phase was decreased and average particle size was increased. The SrTi $O_3$ ceramics of calcined at 100$0^{\circ}C$ had a structure of polycrystalline perovskite without the secondary phases. The average particle size of the $Mg_{0.9}$S $r_{0.1}$Ti $O_3$ ceramics calcined at 100$0^{\circ}C$ were 0.67${\mu}{\textrm}{m}$..>......

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.593-598
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• 1996

Previously, in trying to prepare perovskite type oxide powders by microwave heating, we found out a non-equilibrium argon plasma is generated around the powders and discharge continues stable at atmospheric pressure. In this study, we tried the plasma decomposition of heat-stable higher organic compound such as palmitic acid which is the principal constituent of the fimger fats. It was proved that suitable amount of coexistence of oxygen radicals into the argon flow accelerates the decomposition of palmitic acid. The argon-oxygen mixed gas plasma was able to perform a complete elimination of higher organic compound.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.174-176
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• 2012

Piezoelectric 0.93(Na0.5K0.5)NbO3-0.07BiTiO3 (NKN-BTO) ceramics were fabricated by the mixed-oxide method and their structural and dielectric properties was investigated with the variation of sintering temperature. All specimens were crystallized in the perovskite single phase without any formation of a second phase such as pyrochlore. The average grain size of the NKN-BTO specimen sintered at 1130 ℃ is 0.32 ㎛. The specimen sintered at 1100 ℃ showed the highest relative density of 98%. Electromechanical coupling factor, relative dielectric constant and dielectric loss of the NKN-BTO specimens sintered at 1110 ℃ were 0.31, 1222 and 0.02, respectively. Curie temperature of the specimen sintered at 1110 ℃ was 445 ℃.

• Korean Journal of Materials Research
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• v.3 no.1
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• pp.19-27
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• 1993

Abstract The PZT thin film was deposited by usin. RF magnetron sputtering with PZT(52/48) target. The formation of perovskite structure PZT thin film started at 55$0^{\circ}C$ on Si substrate. The AES results showed an oxide layer formed at the between Si and PZT film during the annealing. And, Ti$O_2$ layer appeared at the between TiN and PZT film for the annealing. But, the perovskite phase PZT film was formed after the annealing on the Si$O_2$/Si substarte. The ratio in PZT film was constant across the asdeposited PZT film, but, Pb have diffused into the Si substrate and Si have out-diffused into PZT layer during the post annealing at 75$0^{\circ}C$. The dielectric constants of PZT film indicated about 1300( thickness: 1500$\AA$, at 10KHz) but, the cracks were appeared to surface for annealing.

• Economic and Environmental Geology
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• v.37 no.4
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• pp.375-381
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• 2004

Pyrochlore was known as one of the most promising materials for the immobilization of radioactive actinide. This study includes the synthesis, phase relation and characteristics of pyrochlores (CaCeH$f_xTi_{2-x}O_7$=0.2, 0.6, 1.0, 1.4, 1.8, 2.0) in the system of Ca-Ce-Hf-Ti-O. The samples were prepared from high purity of starting materials under the pressure of 400kg/cm$^2$ at room temperature, and were sintered at 1200∼1$600^{\circ}C$ The synthesized samples were analyzed and identified with XRD. The optimal formation conditions of pyrochlores were at 1300∼150$0^{\circ}C$ under $O_2$ atmosphere with batch compositions. During synthesis, pyrochlore, perovskite and $A_{2}BO_{5}$ oxide were formed. The characteristics of this system is that parameter of pyrochlore was increased with the content of hafnium. This phenomenon was due to the difference of ionic size between hafnium and titanium in six coordinated site.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.3
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• pp.556-560
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• 2007

In this study, both structural and microwave dielectric properties of the $Mg_5B_4O_{15}$ (B=Ta, Nb) cation-deficient perovskite ceramics with sintering temperature were investigated. All sample of the $Mg_5B_4O_{15}$ (B=Ta, Nb) ceramics were prepared by the conventional mixed oxide method and sintered at $1400^{\circ}C{\sim}1500^{\circ}C$. The bulk density and quality factor of the $Mg_5B_4O_{15}$ (B=Ta, Nb) ceramics were increased with increasing sinterning temperature in the range of $1400^{\circ}C{\sim}1450^{\circ}C$, but these were decreased the sintering temperature of above $1450^{\circ}C$. The dielectric constant of the $Mg_5Ta_4O_{15}$ ceramics was increased continuously with increasing sintering temperature. And the dielectric constant of the $Mg_5Nb_4O_{15}$ ceramics was increased in as the sintering temperature increasesfrom $1400^{\circ}C{\sim}1450^{\circ}C$ but was decreased at the temperatures above $1475^{\circ}C$. In the case of the $Mg_5Ta_4O_{15}\;and\;Mg_5Nb_4O_{15}$ ceramics sintered at $1450^{\circ}C$ for 5h, the dielectric constant, quality factor, and temperature coefficient of the resonant frequency (TCRF) were 8.2, 259,473 GHz, $-10.91ppm/^{\circ}C$ and 14, 37,350 GHz, $-52.3ppm/^{\circ}C$, respectively.

• Journal of Sensor Science and Technology
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• v.10 no.3
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• pp.173-179
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• 2001

The currently used semiconductor pressure sensors are piezoresistive and capacitive type. Especially, semiconductor micro pressure sensors have a great deal of attention because of their small size. However, its fabrication processes are difficult, so that its yield is poor. For the purpose of resolving the drawbacks of the existing silicon pressure sensors, we demonstrate a new type of pressure sensor using PSFET(pressure sensitive field effect transistor) and investigate its operational characteristics. We used PZT(Pb(Zr,Ti)$O_3$) as a pressure sensing material. PZT thin films were deposited on a gate oxide of MOSFET by an rf-magnetron sputtering method. To abtain the stable phase, perovskite structure, furnace annealing technique have been employed in PbO ambient. The sensitivity of the PSFET was 0.38 mV/mmHg.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.7
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• pp.1208-1212
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• 2008

In this study, both structural and microwave dielectric properties of the $Ba_5B_4O_{15}$ (B=Ta, Nb) cation-deficient perovskite ceramics with sintering temperature were investigated. All samples of the $Ba_5B_4O_{15}$ (B=Ta, Nb) ceramics were prepared by the conventional mixed oxide method and sintered at $1325^{\circ}C{\sim}1575^{\circ}C$. The bulk density and dielectric constant of the $Ba_5Ta_4O_{15}$ ceramics were increased continuously with increasing of sintering temperature. The quality factor of the $Ba_5Ta_4O_{15}$ ceramics was increased in as the sintering temperature increases from $1375^{\circ}C{\sim}1475^{\circ}C$ but decreased at the temperatures above $1475^{\circ}C$. And the bulk density, dielectric constant and quality factor of the $Ba_5Nb_4O_{15}$ ceramics were increased in as the sintering temperature increases from $1325^{\circ}CP{\sim}1400^{\circ}C$ but decreased at the temperatures above $1400^{\circ}C$. In the case of the $Ba_5Ta_4O_{15}$ sintered at $1475^{\circ}C$ and $Ba_5Nb_4O_{15}$ ceramics sintered at $1400^{\circ}C$, the dielectric constant, quality factor, and temperature coefficient of the resonant frequency (TCRF) were 25.15, 53,105 GHz, -3.06 $ppm/^{\circ}C$ and 39.55, 28,052 GHz, +5.7 ppm/$^{\circ}C$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.3
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• pp.197-201
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• 2001

The microwave dielectric properties of (1-x)Ba(Mg$_{1}$3/Ta$_{2}$3/)O$_3$-xBa(Co$_{1}$3/Nb$_{2}$3)O$_3$(x=0.25~0.5) ceramics depending on the Ba(Co$_{1}$3/Nb$_{2}$3/)O$_3$[BCN] contents and the possibility of application as a microwave dielectric resonator were investigated. The specimens were prepared by he conventional mixed oxide method using there sintering temperature of 1575$^{\circ}C$. It was found that Ba(Mg$_{1}$3/Ta$_{2}$3/)O$_3$[BMT] and BCN formed a solid solution with complex perovskite structure. As the mole fraction of BCN increased, dielectric constant increased while temperature coefficient of resonant frequency decreased. The highest value of quality factor, Qxf$_{0}$=138,205GHz, obtained in the sample of 0.9BMT-0.1BCN ceramics. In the range of x$\geq$0.4, the dielectric constant was about 30. The 0.55BMT-0.45BCN ceramics showed excellent microwave dielectric properties with $\varepsilon$$_{r}$=30.84, Qxf$_{0}$=75,325GHz and $\tau$$_{f}$=2.9015ppm/$^{\circ}C$.EX>.EX>.