• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.10 s.89
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• pp.922-930
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• 2004

In this paper, the 3-dimensional microstrip antenna, where the lis is attached near the patch, on the pound and both patch and ground in zigzag, is designed and fabricated to miniaturize size of antenna. The path of surface current and permittivity in patch are increased because of attached Iris near the patch, on the pound and patch and found. In particula., the maximum size reduction effect among the three-type of $79.1\%$(17 mm$\times$90 mm) was presented in zigzag-type compared with the rectangular microstrip patch antenna(MPA) with a height of 9 mm at the resonant frequency of 1.575 GHz. The gain showed -1.15 dBd, -10 dB bandwidth showed 6.2$\%$(98 MHz), and HPBW of E-plane showed $154^{\circ}$. As that result we could confirm that the 3-dimensional structure with attached Irises is the proper form for the miniaturization of microstrip antenna.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.9 no.3
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• pp.296-304
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• 1998

A design method of an electromagnetic wave absorber with ferrite fins in the second layer, which has very wide band frequency characteristics and is used for single-polarized wave absorption such as TV wave etc, has been designed. To examine the effectiveness of the Equivalent Material Constants Method$(EMCM)^{[1]}$ which is approximate method, the effective complex permittivity calculated by the Hashin-Strikman formulas and the EMCM are compared. Since, furthermore, the reflectivities by the EMCM in space and the FDTD method in an rectangular waveguide agreed well each other, it has been confirmed that the proposed electromagnetic wave absorber has excellent absorption characteristics in the frequency range of 30 MHz to 5830 MHz. Thus, it can be concluded that the EMCM is usefull to design and analyze the electro-magnetic wave absorber proposed here.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.2
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• pp.881-883
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• 2005

In case is below length 100nm of gate, various kinds problem can be happened with by threshold voltage change of device, occurrence of leakage current by tunneling because thickness of oxide by 1.5nm low scaling is done and doping concentration is increased. SiO$_2$ dielectric substance can not be used for gate insulator because is expected that tunneling current become 1A/cm$^2$ in 1.5nm thickness low. In this paper, devised double gate MOSFET(DGMOSFET) to decrease effect of leakage current by this tunneling. Therefore, could decrease effect of these leakage current in thickness 1nm low of SiO$_2$ dielectric substance. But, very big gate insulator of permittivity should be developed for develop device of nano scale.

• Journal of Navigation and Port Research
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• v.33 no.3
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• pp.193-197
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• 2009

In this paper, the EM wave absorber was designed and fabricated for improvement of Wireless LAN environment at 2.4 GHz. We fabricated several samples in different composition ratios of Sendust and CPE(Chlorinated Polyethylene). Absorption abilities were simulated in accordance with different thicknesses of the prepared absorbers and changed complex relative permittivity and permeability due to composition ratio. The mixing ratio of Sendust and CPE was searched as 80: 20 wt.% by experiments and simulation Then the EM wave absorber was fabricated and tested using the simulated data. As a result, the EM wave absorber was fabricated based on simulated data. Simulated and measured results agreed well. As a result, the developed EM wave absorber with thickness of 3.25 mm has absorption ability of 19 dB at 2.4 GHz.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.12
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• pp.1724-1729
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• 2015

Chlorosulfonated polyethylene (CSPE) was not flooded seawater and flooded seawater & freshwater for 5 days, respectively, and these samples are referred to as BSF(before seawater flooding) and ASFF(after seawater & freshwater flooding), respectively. The apparent density, dissipation factor, relative permittivity, melting temperature, dielectric breakdown time and increased time of applied voltage are higher than those of BSF, but the insulating resistance, dielectric strength, percent elongation and glass transition temperature of ASFF are lower than those of BSF. The differential temperature of those is $0.026{\sim}0.028(^{\circ}C)$ after AC and DC voltage is applied to ASFF, respectively, and the differential temperature of those is $0.013{\sim}0.037(^{\circ}C)$ after AC and DC voltage is applied to BSF, respectively. In the case AC and DC voltage is applied to ASFF as well as BSF, the variations in temperature of AC voltage are higher than those of DC voltage. It is investigated that dielectric loss due to dissipation factor ($tan{\delta}$) is related to electric dipole conduction current. It is certain that the ionic (electron or hole) leakage current was increased by conducting ions such as $Na^+$, $Cl^-$, $Mg^{2+}$, $SO_4^{2-}$, $Ca^{2+}$ and $K^+$, those are related to cured atoms of O and S that relatively increased after seawater flooding.

• Journal of the Korea institute for structural maintenance and inspection
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• v.20 no.4
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• pp.84-93
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• 2016

The signal characteristic of radar wave on concrete decks is determined by the attenuation of the radar due to the conversion of EM(Electromagnetic) energy to thermal energy through electrical conduction, dielectric relaxation, scattering, and geometric spreading. In this study, it is found that the attenuation of radar signal received on top rebars in bare deck concrete with 2 way travel time shows a general decreasing linear trend because of its same relative permittivity and conductivity. The radar signal after depth-normalization, can then be interpreted as being principally influenced by the content of chlorides penetrating cover concrete, which caused corrosion of rebars in bridge decks.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.45-45
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• 2007

Capacitors among the embedded passive components are most widely studied because they are the major components in terms of size and number and hard to embed compared with resistors and inductors due to the more complicated structure. To fabricate a capacitor-embedded PCB for in-line process, it is essential to adopt a low temperature process (<$200^{\circ}C$). However, high dielectric materials such as ferroelectrics show a low permittivity and a high dielectric loss when they are processed at low temperatures. To solve these contradicting problems, we studied BMN materials as a candidate for dielectric capacitors. processed at PCB-compatible temperatures. The morphologies of BMN thin films were investigated by AFM and SEM equipment. The electric properties (C-F, I-V) of Pt/BMN/Cu/polymer were evaluated using an impedance analysis (HP 4194A) and semiconductor parameter analyzer (HP4156A). $Bi_2Mg_{2/3}Nb_{4/3}O_7$(BMN) thin films deposited on copper clad laminate substrates by sputtering system as a function of Ar/$O_2$ flow rate at room temperature showed smooth surface morphologies having root mean square roughness of approximately 5.0 nm. 200-nm-thick films deposited at RT exhibit a dielectric constant of 40, a capacitance density of approximately $150\;nF/cm^2$, and breakdown voltage above 6 V. The crystallinity of the BMN thin films was studied by TEM and XRD. BMN thin film capacitors are expected to be promising candidates as embedded capacitors for printed circuit board (PCB).

• Polymer(Korea)
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• v.28 no.5
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• pp.361-366
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• 2004

The poling characteristics of PVDF (poly(vinylidene fluoride)) film was investigated by measuring the electric voltage generated by the external load for the distributed tactile sensor applications. The poling conditions for the PVDF films were controlled by changing temperature and electric field, and the resulting crystal structure of the $\beta$-phase crystal was confirmed by FT-IR, DSC, and XRD experiments. The $\beta$-phase crystal was increased with the poling temperature and poling voltage, and subsequently the permittivity of the Poled PVDF films was increased. Finally, the prototype tactile sensor was tested by a 8 $\times$ 8 may circuit exhibiting high voltage signal for the highly poled PVDF films.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.37-37
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• 2010

Silicate-silsesquioxane or siloxane-silsesquioxane hybrid thin films are strong candidates as matrix materials for ultra low dielectric constant (low-k) thin films. We synthesized the silicate-silsesquioxane hybrid resins from tetraethoxyorthosilicate (TEOS) and methyltrimethoxysilane (MTMS) through hydrolysis and condensation polymerization by changing their molar ratios ([TEOS]:[MTMS] = 7:3, 5:5, and 3:7), spin-coating on Si(100) wafers. In the case of [TEOS]:[MTMS] 7:3, the dielectric permittivity value of the resultant thin film was measured at 4.30, exceeding that of the thermal oxide (3.9). This high value was thought to be due to Si-OH groups inside the film and more extensive studies were performed in terms of electronic, ionic, and orientational polarizations using Debye equation. The relationship between the mechanical properties and the synthetic conditions of the silicate-silsesquioxane precursors was also investigated. The synthetic conditions of the low-k films have to be chosen to meet both the low orientational polarization and high mechanical properties requirements. In addition, we have investigated a new solution-based approach to the synthesis of semiconducting chalcogenide films for use in thin-film transistor (TFT) devices, in an attempt to develop a simple and robust solution process for the synthesis of inorganic semiconductors. Our material design strategy is to use a sol-gel reaction to carry out the deposition of a spin-coated CdS film, which can then be converted to a xerogel material. These devices were found to exhibit n-channel TFT characteristics with an excellent field-effect mobility (a saturation mobility of ${\sim}\;48\;cm^2V^{-1}s^{-1}$) and low voltage operation (< 5 V). These results show that these semiconducting thin film materials can be used in low-cost and high-performance printable electronics.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.506-508
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• 2005

In general, organic TFTs are comprised of four components: gate electrode, gate dielectric, organic active semiconductor layer, and source and drain contacts. The TFT current, in turn, is typically determined by channel length and width, carrier field effect mobility, gate dielectric thickness and permittivity, contact resistance, and biasing conditions. More recently, a number of techniques and processes have been introduced to the fabrication of OTFT circuits and displays that aim specifically at reduced fabrication cost. These include microcontact printing for the patterning of metals and dielectrics, the use of photochemically patterned insulating and conducting films, and inkjet printing for the selective deposition of contacts and interconnect pattern. In the fabrication of organic TFTs, microcontact printing has been used to pattern gate electrodes, gate dielectrics, and source and drain contacts with sufficient yield to allow the fabrication of transistors. We were fabricated a pentacene OTFTs on flexible PEN film. Au/Cr was used for the gate electrode, parylene-c was deposited as the gate dielectric, and Au/Cr was chosen for the source and drain contacts; were all deposited by ion-beam sputtering and patterned by microcontact printing and lift-off process. Prior to the deposition of the organic active layer, the gate dielectric surface was treated with octadecyltrichlorosilane(OTS) from the vapor phase. To complete the device, pentacene was deposited by thermal evaporation and patterned using a parylene-c layer. The device was shown that the carrier field effect mobility, the threshold voltage, the subthreshold slope, and the on/off current ratio were improved.