• 대한기계학회논문집B
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• 제37권2호
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• pp.125-130
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• 2013

TPMS(Tire pressure monitoring system)의 의무장착에 대한 법률개정에 따른 개발의 활성화를 토대로, WSN(Wireless Sensor Network)의 '설치하고 잊어버린다'는 기본 명제 하에, 차량수명과 동일한 성능의 배터리 대체용 에너지 하베스터에 대한 연구가 활발히 진행되고 있다. 본 논문은 자동차의 메커니즘적인 측면에서 가장 유용한 회전운동 성분을 이용하여 회전하는 휠과 고정된 브레이크 디스크 사이의 상대운동을 통한 전자기 유도방식 발전을 채택하였다. 휠 측에 구성된 코일과 브레이크 디스크에 매립된 자석의 다양한 배열과 코일 권선수 등을 설계변수로 잡고 직교배열표를 이용하여 최적의 조합을 찾아낸 후 실험을 통해 실제 축전되는 전기 에너지의 양을 측정하여 도출된 특성함수를 바탕으로 본 모듈의 타당성을 검증하였다.

• Journal of Electrical Engineering and Technology
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• 제7권4호
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• pp.558-563
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• 2012

In this paper, a novel planar type magnetic levitation system without other assistant devices is proposed and it can move with 6 degree of freedom (X, Y, Z, ${\theta}_X$, ${\theta}_Y$, ${\theta}_Z$) in wafer size as well as in nano scale positioning.The mover is composed with 2-D Halbach permanent magnet array and the stator is composed with $10{\times}10$ coil arrays.It was composed in laboratory and tested with short stroke (4 [mm]) and long stroke (160 [mm])movements. The errors of short movement test is [X, Y, Z, ${\theta}_X$, ${\theta}_Y$, ${\theta}_Z$]${\leq}$ [${\pm}200nm$, ${\pm}200nm$, ${\pm}250nm$, ${\pm}3urad$, ${\pm}2urad$, ${\pm}1urad$]The errors of long stroke movement test is [X, Y, Z, ${\theta}_X$, ${\theta}_Y$, ${\theta}_Z$]${\leq}$ [${\pm}200nm$, ${\pm}200nm$, ${\pm}250nm$, ${\pm}1.5urad$, ${\pm}2urad$, ${\pm}0.5urad$].

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.305-309
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• 1999

This paper presents an high efficiency energy conversion system for very high-speed flywheel energy storage system using high Tc superconducting bearings. Main configuration of power convertor is designed to replace of the conventional battery with EMB(Electro Mechanical Battery). PMSM(Permanent Magnet Synchronous Motor) using Halbach array is used as the energy conversion system of motor and generator. Some PWM methods for the high frequency inverter is described and the power factor effects to the torque characteristics and efficiency of the motor and generator is analyzed. As the results, it is verified that the inverter output current is well regulated to be in-phase or inverse-phase sinusoidal waveform to have the wide operational range from 2,500rpm to 42,000rpm. Proposed circuit is designed to obtain the very high speed, high efficiency and stable rotational characteristics, and to be applied to1.2r[kW]/65[Wh] system.

• 한국초전도ㆍ저온공학회논문지
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• 제17권1호
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• pp.14-16
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• 2015

Due to the considerable development of the technology of second generation high-temperature superconductors and a significant improvement in their mechanical and transport properties in the last few years it is possible to use HTS tapes in the magnetic levitation systems. The advantages of tapes on a metal substrate as compared with bulk YBCO material primarily in the strength, and the possibility of optimizing the convenience of manufacturing elements of levitation systems. In the present report presents the results of the magnetic levitation force measurements between the stack of HTS tapes containing $n=2{\div}200$ of tapes $12mm{\times}12mm$ and NdFeB permanent magnet in the FC and ZFC regimes. It was found a non- linear dependence of the levitation force from the height of the array of stack in both modes: linear growth at small thickness gives way to flattening and constant at large number of tapes in the stack. Established that the levitation force of stacks comparable to that of bulk samples. The numerical calculations using finite element method showed that without the screening of the applied field the levitation force of the bulk superconductor and the layered superconductor stack with a critical current of tapes increased by the filling factor is exactly the same, and taking into account the screening force slightly different.

• 한국자동차공학회논문집
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• 제23권1호
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• pp.25-33
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• 2015

This paper presents the d-q axis equivalent circuit model of an interior permanent magnet (IPM) which includes the iron loss resistance. The model is implemented to be able to run in real-time on the FPGA-based HIL simulator. Power electronic devices are removed from the motor control unit (MCU) and a separated controller is interfaced with the real-time simulated motor drive through a set of proper inputs and outputs. The inputs signals of the HIL simulation are the gate driver signals generated from the controller, and the outputs are the winding currents and resolver signals. This paper especially presents iron loss prediction which is introduced by means of comparing the torque calculated from d-q axis currents and the desired torque; and minimizing the torque difference. This prediction method has stable prediction algorithm to reduce torque difference at specific speed and load. Simulation results demonstrate the feasibility and effectiveness of the proposed methods.

• 한국전기전자재료학회논문지
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• 제22권7호
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• pp.595-601
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• 2009

For the silicon oxide $(SiO_x)$ films prepared by using the facing target sputtering (FTS) apparatus that was manufactured to enhance the preciseness of the fabricated thin-film and sputtering yield rate by forming a higher-density plasma in the electrical discharge space for using it as a thin-film passivation system for flexible organic light emitting devices (FOLEDs). The deposition characteristics were investigated under various process conditions, such as array of the cathode magnets, oxygen concentration$(O_2/Ar+O_2)$ introduced during deposition, and variations of distance between two targets and working pressure. We report that the optimum conditions for our FTS apparatus for the deposition of the $SiO_x$ films are as follows: $d_{TS}\;and\;d_{TT}$ are 90mm and 120mm, respectively and the maximum deposition rate is obtained under a gas pressure of 2 mTorr with an oxygen concentration of 3.3%. Under this optimum conditions, it was found that the $SiO_x$ film was grown with a very high deposition rate of $250{\AA}$/min by rf-power of $4.4W/cm^2$, which was significantly enhanced as compared with a deposition rate (${\sim}55{\AA})$/min) of the conventional sputtering system. We also reported that the FTS system is a suitable method for the high speed and the low temperature deposition, the plasma free deposition, and the mass-production.

• 비파괴검사학회지
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• 제22권1호
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• pp.38-44
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• 2002

누설자속법은 신뢰성과 경제성을 충족시키면서 정성적인 결과를 제공하는 비파괴시험법이다. 특히 저장탱크바닥판의 검사에 효과적으로 적용될 수 있음을 보여주었다. 이전에 저장탱크 qkekrvis의 검사에 사용되었던 초음파탐상법은 검사속도가 느리고, 적용에 따른 어려움으로 국부검사에 한정되어 왔다. 본 연구팀은 이러한 초음파탐상의 단점을 극복하고자 누설자속탐상법을 개발하였다. 개발된 시스템의 주요부분은 누설자속 발생부, 어레이센서, crawler 및 운용프로그램으로 구성되어 있고, 최종적으로 개발된 시스템이 6mm강판에서 ${\psi}3.2mm,\;d\;1.2mm$와 같은 인공결함을 검출할 수 있음을 보여주었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.288-289
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• 2011

Indium Tin Oxide (ITO) is a typical highly Transparent Conductive Oxide (TCO) currently used as a transparent electrode material. Most widely used deposition method is the sputtering process for ITO film deposition because it has a high deposition rate, allows accurate control of the film thickness and easy deposition process and high electrical/optical properties. However, to apply high quality ITO thin film in a flexible microelectronic device using a plastic substrate, conventional DC magnetron sputtering (DMS) processed ITO thin film is not suitable because it needs a high temperature thermal annealing process to obtain high optical transmittance and low resistivity, while the generally plastic substrates has low glass transition temperatures. In the room temperature sputtering process, the electrical property degradation of ITO thin film is caused by negative oxygen ions effect. This high energy negative oxygen ions(about over 100eV) can be critical physical bombardment damages against the formation of the ITO thin film, and this damage does not recover in the room temperature process that does not offer thermal annealing. Hence new ITO deposition process that can provide the high electrical/optical properties of the ITO film at room temperature is needed. To solve these limitations we develop the Magnetic Field Shielded Sputtering (MFSS) system. The MFSS is based on DMS and it has the plasma limiter, which compose the permanent magnet array (Fig.1). During the ITO thin film deposition in the MFSS process, the electrons in the plasma are trapped by the magnetic field at the plasma limiters. The plasma limiter, which has a negative potential in the MFSS process, prevents to the damage by negative oxygen ions bombardment, and increases the heat(-) up effect by the Ar ions in the bulk plasma. Fig. 2. shows the electrical properties of the MFSS ITO thin film and DMS ITO thin film at room temperature. With the increase of the sputtering pressure, the resistivity of DMS ITO increases. On the other hand, the resistivity of the MFSS ITO slightly increases and becomes lower than that of the DMS ITO at all sputtering pressures. The lowest resistivity of the DMS ITO is $1.0{\times}10-3{\Omega}{\cdot}cm$ and that of the MFSS ITO is $4.5{\times}10-4{\Omega}{\cdot}cm$. This resistivity difference is caused by the carrier mobility. The carrier mobility of the MFSS ITO is 40 $cm^2/V{\cdot}s$, which is significantly higher than that of the DMS ITO (10 $cm^2/V{\cdot}s$). The low resistivity and high carrier mobility of the MFSS ITO are due to the magnetic field shielded effect. In addition, although not shown in this paper, the roughness of the MFSS ITO thin film is lower than that of the DMS ITO thin film, and TEM, XRD and XPS analysis of the MFSS ITO show the nano-crystalline structure. As a result, the MFSS process can effectively prevent to the high energy negative oxygen ions bombardment and supply activation energies by accelerating Ar ions in the plasma; therefore, high quality ITO can be deposited at room temperature.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.