• Journal of the Korean Society of Combustion
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• v.1 no.1
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• pp.75-82
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• 1996

Laser induced incandescence, LII, recently developed technique for measuring soot concentration in flames, can overcome most of limitations of conventional laser extinction measurement. In this study, experiments were performed to investigate the effect of laser intensity, detection wavelength, and also laser beam quality on both LII signal at a particular position and peak-to-centerline LII signal ratio. The results of LII signal with increasing laser intensity shows its near-independence of laser intensity once threshold level of laser intensity has been reached. However, this near-independence depends on laser beam quality and the incident optical setup. The peak-to-centerline LII signal ratio slowly but continuously increases with laser power. This fact is due to the dependence of LII signal on particle mean diameter. LII signal is attenuated during it passes through the flame containing soot particles. The attenuation rate is inversely proportional to detection wavelength. In this study, LII signal at 680 nm band is 10% greater than the signal at 400 nm band.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.9
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• pp.444-449
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• 2001

In this paper, a novel ultraviolet sensor is presented based on a photoluminescent porous silicon. Porous silicon layer was formed by chemical etching of surface of pn junction in a $HF(48%)-HNO_3(60%)-H_20$ solution. Incident ultraviolet(UV) light is converted to visible light by photoluminescent porous silicon layer, and then this visible light generates electron-hole pairs in the pn junction, which produces a photocurrent flow through the device. In order to maximize detection efficiency, the peak sensitivity wavelength of the pn junction diode was matched with the peak wavelength of Photoluminescence from porous silicon layer. The porous silicon ultraviolet sensor showed a large output current as UV intensity increases and but very low sensitivity to visible light. The detection sensitivity of porous silicon sensor was calculated as 2.91mA/mW. These results are expected to open up a possibility that the present porous silicon sensor can be used for detecting UV light in a visible background, compared to silicon UV detectors which have an undesirable response to visible light.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.43 no.2
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• pp.9-15
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• 2011

Fluorescent whitening agent (FWA) is a widely used chemical in paper industry, but a systematic and scientific method on FWA analysis has not been established. We performed the basic researches on the fluorescence analysis of FWA. The fluorescence of FWA was investigated using a spectrofluorometer and a spectrophotometer. When FWA solution was analyzed using the spectrofluorometer, we found that the peak wavelength of the fluorescence emission was about 440 nm and that of the fluorescence excitation was about 370 nm irrespective of FWA types. Papers dyed with an internal FWA were prepared in a laboratory and the reflectance and the fluorescence index were measured using the spectrophotometer. It was confirmed that the optimum peak wavelength of the reflectance was 440 nm and the fluorescence index calculated from the CIE whiteness with and without UV light under a light source D65 was the best indicator to measure the fluorescence of FWAs exiting in papers.

• Journal of Surface Science and Engineering
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• v.28 no.3
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• pp.182-191
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• 1995

A highly porous silicon layer was fabricated by anodizing single crystalline silicon in a dilute solution of hydrofluoric acid. The color of the porous silicon changed from red and blue to yellow gold during the anodizing process. The current-voltage (I-V) curve of the anodizing process showed a typical Schottky diode rectification form. The cell voltage decreased with the increase of HF concentration in the solution at high current range. However, the voltage was independent on HF concentration in the solution at low current range. The pore size was dependant on anodizing condition (HF concentration, current and anodizing time). The pore size and wall width of porous silicon layer were 4~6 and 1~3 nm, respectively. Surface of the porous silicon was covered with silicon compound ($SiH_x$etc.) according to IR spectrum analysis. The peak wavelength and width of photoluminescence (PL) spectrum of porous silicon were 650~850 nm (1.5~1.9 eV) and 250 nm, respectively. The photoluminescence intensity and peak wavelength, and porosity of porous silicon increased with increasing anodizing current and decreased with increasing HF concentration in the anodizing solution.

• Bulletin of the Korean Chemical Society
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• v.21 no.8
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• pp.769-773
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• 2000

The dependence of photoluminescence (PL) and photoluminescence itation (PLE) on preparation condi-tions and the aging of porous silicon carbide (PSC) have been investigatted. The fiber size of the material pre-pared under dark-current mode, labele d DCM, was larger than that of the photoassisted (PA)process.The intensity of the PL spectrum for the PA condition was higher than that of the DCM condition. The PA condition giving small fiber size exhibited amore prominent high-energy component but the emission bands of both con-ditionsobserved were rather similar. The origin of the PL may have played an importantrole in the surface defect center introduced by the reaction conditions ofHFatthe surface of the silicon carbide. Selective excita-tion of the PL bandsusingdifferent excitation wavelengths has been used to identify distinct componentswith-in the PL bandwidth. Two main PL bands with peak wavelength of494 and534 nm were clearly resolved. On the other hand, selectivc emission of the PLEbands using different emission wavelengths has been used to identify distinct components within the PLE bandwidth. The higher energy band with peak wavelength of 338 nm and the lower energy bands involving 390,451 and 500 nm were clearly resolved. According to the pro-ionged aging in air, PL spectra appearedasone band, This emission probably originated from states localized to the band-to-band recombination due to the oxidation on the crystallite surface.

• Current Optics and Photonics
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• v.7 no.1
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• pp.47-53
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• 2023

We propose a centralized passive-optical-network monitoring scheme using the resonance-spectrum properties of a Fabry-Perot cavity based on fiber Bragg gratings. Each cavity consists of two identical uniform fiber Bragg gratings and a varying cavity length or grating length, which can produce a unique single-mode resonance spectrum for the drop-fiber link. The output spectral properties of each cavity can be easily adjusted by the cavity length or the grating length. The resonance spectrum for each cavity is calculated by the transfer-matrix method. To obtain the peak wavelength of the resonance spectrum more accurately, the effective cavity length is introduced. Each drop fiber with a specific resonance spectrum distinguishes between the peak wavelength or linewidth. We also investigate parameters such as reflectivity and bandwidth, which determine the basic performance of the fiber Bragg grating used, and thus the output-spectrum properties of the Fabry-Perot cavity. The feasibility of the proposed scheme is verified using the Optisystem software for a simplified 1 × 8 passive optical network. The proposed scheme provides a simple, effective solution for passive-optical-network monitoring, especially for a high-density network with small end-user distance difference.

• Journal of Practical Agriculture & Fisheries Research
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• v.22 no.1
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• pp.99-112
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• 2020

A edible mushroom, Hypsizygus marmoreus is commercially cultivated. However, the researches of cultivation and physiological characteristics were not conducted in Korea. In this study, we conducted on artificial cultivation of H. marmoreus and elucidated the effect of light on the mycelial growth and fruit body development using LED light sources with different wavelength; blue (peak wave length 460nm), green(peak wave length 530nm), yellow(peak wave length 590nm), red(peak wave length 630nm), and white as positive control. Mycelial growth of H. marmoreus strains were inhibited about 30~40% in inhibition ratio under the illumination with blue, green, yellow LED light. However, red LED light was not inhibited. Elongation of stipe was effective under the long wave length such as yellow and red light. Abnormal fruit body was produced under the long wavelength and dark. However, development of pileus was effective under the short wavelength such as green and blue light. Also, as a result of cultivation with mixed light for high quality and harvest, many effective numbers and yields of fruiting bodies were obtained in the mixed treatment of blue and white light, and pileus developed well.

• Journal of Korean Ophthalmic Optics Society
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• v.7 no.2
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• pp.175-180
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• 2002

Use spctrophotometer to estimate thin film uniformity of lens, Compare, and analyze thin film uniformity availability selecting two peaks of Reflectance(R%) measuring on spectrum. Wavelength dependence's Reflectance in position of center, middle and edge of lens etc... obtain thin film's thickness (t) from Wavelength region (${\lambda}_1,{\lambda}_2$) of two peaks of Reflectance. $$t=\frac{1}{2(n^2-\sin^2{\theta})^{1/2}}{\times}\frac{{\lambda}_1{\lambda}_2}{{\lambda}_2-{\lambda}_1}$$ If Reflectance pattern is uniformity value in position of center middle of lens, edge etc... thin film has uniformity. Applied thin film uniformity estimation method to 1st layer $MgF_2$(n=1.38) coating lens. It was about thin film's thickness difference 360nm. Can analyze coating lens' thin film uniformity easily from Reflectance relationship measurement about Wavelength dependence.

• Journal of the Korean Ceramic Society
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• v.43 no.1 s.284
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• pp.10-15
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• 2006

Photoluminescence (PL) and crystal structures of the $(l-x)CaWO_4-xLi_2WO_4$ binary system added with $Eu_2O_3$ activator have been characterized. The $CaWO_4\;and\;Li_2WO_4$ have the scheelite and phenakite structures respectively. The $CaWO_4-Li_2WO_4-Eu_2O_3$ phosphors show the red luminescence of 613 nm peak wavelength. The wavelength range of excitation spectral band is $380\~470$ nm with the peak wavelength of 397 nm. The $0.88(0.5CaWO_4-0.5Li_2WO_4)-0.12Eu_2O_3$ showed the most superior luminescence characteristics. The effect of co-doping elements such as $Al_2O_3$ and rare-earth oxides on PL has been characterized. The co-doping elements deteriorated the luminescence intensity except the $Al_2O_3$ and $Gd_2O_3$. The PL characteristics of $CaWO_4-Li_2WO_4-Eu_2O_3$ phosphors have been compared to those of the alkali europium double molybdates (tungstates) of scheelite-related structure such as $LiEu(MoO_4)_2$ and $CsEu(MoO_4)_2$. The crystal structures of $(l-y)[(l-x)CaWO_4-xLi_2WO_4]-yEu_2O_3$ phosphors have been characterized using XRD data and rietveld refinement.

• Korean Journal of Food Science and Technology
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• v.24 no.5
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• pp.404-407
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• 1992

This study was conducted to determine the effect of the physical and chemical factors on the absorbance when the chemical component of food was rapidly and effectively analyzed with near infrared reflection spectrophotometer. The absorbance was measured within the wavelength range of 1100 and 2500m and at the various sample temperatures. The absorbance was greatly increased with the rising sample temperature. When the grinding time of samples prolonged, the absorbance was decreased. The absorption peaks occurring in the near infrared spectra of meat, meat protein, pork fat and water were attributed to the overtone and combination vibration of C-H, N-H, O-H or C=O bond within the macromolecules of each sample. The absorbance was lower for meat protein than other meat components. Pork fat was characterized by the ${\cdot}CH_2{\cdot}$ absorption peak at the wavelength of 1700 and 2300 nm and water by the relatively high absorption peak at the wavelength of 1450 and 1930 nm. As a result, the absorbance of near infrared reflection spectrum of meat was affected mainly by fat and water in meat.