• Title/Summary/Keyword: Pd thin film

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Effect of Surface Modification of the Porous Stainless Steel Support on Hydrogen Perm-selectivity of the Pd-Ag Alloy Hydrogen Separation Membranes (다공성 스테인리스 강 지지체의 표면개질에 따른 팔라듐-은 합금 수소 분리막의 수소 투과 선택도의 변화)

  • Kim, Nak-Cheon;Kim, Se-Hong;Lee, Jin-Beum;Kim, Hyun-Hee;Yang, Ji-Hye;Kim, Dong-Won
    • Journal of the Korean institute of surface engineering
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    • v.49 no.3
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    • pp.286-300
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    • 2016
  • Pd-Ag alloy membranes have attracted a great deal of attention for their use in hydrogen purification and separation due to their high theoretical permeability, infinite selectivity and chemical compatibility with hydro-carbon containing gas streams. For commercial application, Pd-based membranes for hydrogen purification and separation need not only a high perm-selectivity but also a stable long-term durability. However, it has been difficult to fabricate thin, dense Pd-Ag alloy membranes on a porous stainless steel metal support with surface pores free and a stable diffusion barrier for preventing metallic diffusion from the porous stainless steel support. In this study, thin Pd-Ag alloy membranes were prepared by advanced Pd/Ag/Pd/Ag/Pd multi-layer sputter deposition on the modified porous stainless steel support using rough polishing/$ZrO_2$ powder filling and micro-polishing surface treatment, and following Ag up-filling heat treatment. Because the modified Pd-Ag alloy membranes using rough polishing/$ZrO_2$ powder filling method demonstrate high hydrogen permeability as well as diffusion barrier efficiency, it leads to the performance improvement in hydrogen perm-selectivity. Our membranes, therefore, are expected to be applicable to industrial fields for hydrogen purification and separation owing to enhanced functionality, durability and metal support/Pd alloy film integration.

Fabrication and characteristics of polycrystalline 3C-SiCSchottky diodes for high temperature chemical sensors (고온 화학센서용 다결정 3C-SiC 쇼트키 다이오드 제작과 그 특성)

  • Chung, Gwiy-Sang;Ahn, Jeong-Hak
    • Journal of Sensor Science and Technology
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    • v.17 no.6
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    • pp.414-417
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    • 2008
  • This paper describes the fabrication of a Pd/poly 3C-SiC Schottky diode and its characteristics, in which the poly 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as $2{\times}10^{-3}A/cm^2$ and 0.58 eV, respectively. These devices were operated until about $400^{\circ}C$. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.

Underlayer for Coercivity Enhancement of Ti/CoCrPt Thin Films (보자력 향상을 위한 Ti/CoCrPt박막의 하지층)

  • Jang, Pyung-Woo
    • Journal of the Korean Magnetics Society
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    • v.12 no.3
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    • pp.94-98
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    • 2002
  • Sputtering conditions and various underlayer such as Al, Cu, Ni, Cr, Ag, Mg, Fe, Co, Pd, Au, Pt, Mo and Hf were investigated for coercivity enhancement of 20 nm Ti/CoCrPt thin films in order to increase the coercivity of the films thinner than 20 nm. Among them, Ag and Mg were effective to increase the coercivity. Particularly 2 nm Ag was very effective to increase the coercivity and nucleation field as well as to reduce ${\alpha}$ value in CoCrPt thin film such that the coercivity of 2 nm Ag/18 nm Ti/10 nm CoCrPt film was 2200 Oe. However, it seemed that other coercivity enhancement mechanism operated in CoCrPt films because Ti (002) preferred texture was not developed with Ag underlayer contrary to a general expectation. And the coercivity and nucleation field were decreased when glass substrate with rougher surface was used.

The Effect of Cu Reflow on the Pd-Cu Alloy Membrane Formation for Hydrogen Separation (수소분리용 Pd-Cu 합금 분리막의 Cu Reflow 영향)

  • Mun, Jin-Uk;Kim, Dong-Won
    • Journal of the Korean institute of surface engineering
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    • v.39 no.6
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    • pp.255-262
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    • 2006
  • Pd-Cu alloy membrane for hydrogen separation was fabricated by sputtering and Cu reflow process. At first, the Pd and Cu was continuously deposited by sputtering method on oxidized Si support, the Cu reflow process was followed. Microstructure of the surface and permeability of the membrane was investigated depending on various reflow temperature, time, Pd/cu composition and supports. With respect to our result, Pd-Cu thin film (90 wt.% Pd/10 wt.% Cu) deposited by sputtering process with thickness of $2{\mu}m$ was heat-treated for Cu reflow The voids of the membrane surface were completely filled and the dense crystal surface was formed by Cu reflow behavior at $700^{\circ}C$ for 1 hour. Cu reflow process, which is adopted for our work, could be applied to fabrication of dense Pd-alloy membrane for hydrogen separation regardless of supports. Ceramic or metal support could be easily used for the membrane fabricated by reflow process. The Cu reflow process must result in void-free surface and dense crystalline of Pd-alloy membrane, which is responsible for improved selectivity oi the membrane.

The surface propery change of multi-layer thin film on ceramic substrate by ion beam sputtering (이온빔 스퍼터링법에 의한 다층막의 표면특성변화)

  • Lee, Chan-Young;Lee, Jae-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.259-259
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    • 2008
  • The LTCC (Low Temperature Co-fired Ceramic) technology meets the requirements for high quality microelectronic devices and microsystems application due to a very good electrical and mechanical properties, high reliability and stability as well as possibility of making integrated three dimensional microstructures. The wet process, which has been applied to the etching of the metallic thin film on the ceramic substrate, has multi process steps such as lithography and development and uses very toxic chemicals arising the environmental problems. The other side, Plasma technology like ion beam sputtering is clean process including surface cleaning and treatment, sputtering and etching of semiconductor devices, and environmental cleanup. In this study, metallic multilayer pattern was fabricated by the ion beam etching of Ti/Pd/Cu without the lithography. In the experiment, Alumina and LTCC were used as the substrate and Ti/Pd/Cu metallic multilayer was deposited by the DC-magnetron sputtering system. After the formation of Cu/Ni/Au multilayer pattern made by the photolithography and electroplating process, the Ti/Pd/Cu multilayer was dry-etched by using the low energy-high current ion-beam etching process. Because the electroplated Au layer was the masking barrier of the etching of Ti/Pd/Cu multilayer, the additional lithography was not necessary for the etching process. Xenon ion beam which having the high sputtering yield was irradiated and was used with various ion energy and current. The metallic pattern after the etching was optically examined and analyzed. The rate and phenomenon of the etching on each metallic layer were investigated with the diverse process condition such as ion-beam acceleration energy, current density, and etching time.

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MAGNETO-OPTICAL INVESTIGATION OF LOW-DEMENSIONAL MAGNETIC STRUCTURES

  • Shalyguina, E.E.;Kim, Cheol-Gi
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05a
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    • pp.13-16
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    • 2003
  • Magnetic and magneto-optical properties of Fe/Pt/Fe, Co/Pd/Co trilayers and also the sandwiches with wedge-shaped magnetic (Fe, Co) and nonmagnetic (Pt, Pd) layers were investigated. The oscillatory behavior of the saturation field $H_{s}$ of the studied trilayers with changing the thickness of the nonmagnetic layer (NML) $t_{NML}$ was revealed. That was explained by the exchange coupling between ferromagnetic layers (FML) through the nonmagnetic spacer. For the first time, oscillations of the transverse Kerr effect (TKE) with changing the Pt- and Pd-wedge thickness were discovered. Period of these oscillations was found to depend on the FML thickness and the photon energy of the incident light. TKE spectra of the examined samples were discovered to modify very strongly with increasing $t_{NML}$. The discovered peculiarities of magneto-optical properties of thin-film systems were explained by a concept of the spin-polarized quantum well states in the pt and Pd layers.

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Fabrication of electromagnetic shielding film used metal evaporated thin film for under coated layer (도금 하지층으로 금속 증착막을 이용한 전자파 차폐 필름의 제조)

  • Lee, Seong-Jun;Kim, Dong-Hyeon
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2013.05a
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    • pp.58-58
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    • 2013
  • 폴리에스테르 필름상에 무전해 Cu 도금 및 무전해 Ni-P 도금층을 형성하는 방법으로 박형 전자파 차폐 필름의 제조에 대하여 연구 하였다. 무전해 도금의 전처리 방법으로 기존의 Pd 촉매를 사용하는 대신에, 증착법에 의한 Sn 피막의 형성으로 전자파 차폐 특성 및 유연성이 우수한 박형 전자파 차폐 필름의 형성이 가능하게 되었다.

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[ SnO2 ] Gas Sensors Using LTCC (Low Temperature Co-fired Ceramics) (LTCC 를 이용한 SnO2 가스 센서)

  • Cho, Pyeong-Seok;Kang, Chong-Yun;Kim, Sun-Jung;Kim, Jin-Sang;Yoon, Seok-Jin;Hieu, Nguyen Van;Lee, Jong-Heun
    • Korean Journal of Materials Research
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    • v.18 no.2
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    • pp.69-72
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    • 2008
  • A sensor element array for combinatorial solution deposition research was fabricated using LTCC (Low-temperature Co-fired Ceramics). The designed LTCC was co-fired at $800^{\circ}C$ for 1 hour after lamination at $70^{\circ}C$ under 3000 psi for 30 minutes. $SnO_2$ sol was prepared by a hydrothermal method at $200^{\circ}C$ for 3 hours. Tin chloride and ammonium carbonate were used as raw materials and the ammonia solution was added to a Teflon jar. 20 droplets of $SnO_2$ sol were deposited onto a LTCC sensor element and this was heat treated at $600^{\circ}C$ for 5 hours. The gas sensitivity ($S\;=\;R_a/R_g$) values of the $SnO_2$ sensor and 0.04 wt% Pd-added $SnO_2$ sensor were measured. The 0.04 wt% Pd-added $SnO_2$ sensor showed higher sensitivity (S = 8.1) compared to the $SnO_2$ sensor (S = 5.95) to 200 ppm $CH_3COCH_3$ at $400^{\circ}C$.

$NO_2$ gas sensing properties of $SnO_2$ thin films dopped with Pd and CNT (Pd 및 CNT 첨가에 따른 $SnO_2$ 박막의 이산화질소 감지특성)

  • Kim, H.K.;Lee, R.Y.
    • Journal of the Microelectronics and Packaging Society
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    • v.15 no.4
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    • pp.101-106
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    • 2008
  • The $SnO_2$ thin films doped with Pd and CNT as $NO_2$ gas sensor were prepared by spin coating and then the $NO_2$ gas response of these films were evaluated under $1ppm{\sim}5ppm\;NO_2$ concentration and operating temperature of $200^{\circ}C$. It was found that the sensor resistance was increased with $NO_2$ exposure and $NO_2$ concentration. The 3wt% Pd doped sample showed a sensitivity of 26.5 which was 10 times higher than that of pure $SnO_2$. And also the sensitivity of CNT doped sample increased with CNT content and it had 72 when 0.225 wt% of CNT was added under 5ppm $NO_2$ concentration.

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