• 한국재료학회지
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• 제29권5호
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• pp.297-303
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• 2019

A triple-layered $PMMA/Ni_{64}Zr_{36}/PDMS$ hydrogen gas sensor using hydrogen permeable alloy and flexible polymer layers is fabricated through spin coating and DC-magnetron sputtering. PDMS(polydimethylsiloxane) is used as a flexible substrate and PMMA(polymethylmethacrylate) thin film is deposited onto the $Ni_{64}Zr_{36}$ alloy layer to give a high hydrogen-selectivity to the sensor. The measured hydrogen sensing ability and response time of the fabricated sensor at high hydrogen concentration of 99.9 % show a 20 % change in electrical resistance, which is superior to conventional Pd-based hydrogen sensors, which are difficult to use in high hydrogen concentration environments. At a hydrogen concentration of 5 %, the resistance of electricity is about 1.4 %, which is an electrical resistance similar to that of the $Pd_{77}Ag_{23}$ sensor. Despite using low cost $Ni_{64}Zr_{36}$ alloy as the main sensing element, performance similar to that of existing Pd sensors is obtained in a highly concentrated hydrogen atmosphere. By improving the sensitivity of the hydrogen detection through optimization including of the thickness of each layer and the composition of Ni-Zr alloy thin film, the proposed Ni-Zr-based hydrogen sensor can replace Pd-based hydrogen sensors.

• Bulletin of the Korean Chemical Society
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• 제35권3호
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• pp.743-748
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• 2014

In this work, we describe a very simple electroless deposition method to prepare moderate-SERS-active nanostructured Pd films deposited on the glass substrates. To the best of our knowledge, this is the first report on the one-pot electroless method to deposit Pd nanostructures on the glass substrates. This method only requires the incubation of negatively charged glass substrates in ethanol-water mixture solutions of $Pd(NO_3)_2$ and butylamine at elevated temperatures. Pd films are then formed exclusively and evenly on glass substrates. Due to the aggregated structures of Pd, the SERS spectra of benzenethiol and organic isonitrile could be clearly identified using the Pd-coated glass as a SERS substrate. This one-step fabrication method of Pd thin film on glass is cost-effective and suitable for the mass production.

• 한국수소및신에너지학회논문집
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• 제9권1호
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• pp.25-30
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• 1998

${\alpha}$상 영역에서의 Pd박막(두께 $180{\AA}$)의 수소흡수 동역학을 4극 전기비저항측정법을 이용하여 연구하였다. 기체상태의 수소를 Pd 박막에 흡수시켰다. ${\alpha}$상의 매우 낮은 농도영역에서 수소 반응율이 다음과 같이 나타내어졌다. $$v=k\frac{1}{1+KX{_H}}PH{_2}-k^{\prime}\frac{KX{_H}{^2}}{1+KX{_H}}$$ 이는 덩어리 시료의 경우와 같다. 정방향반응의 활성화에너지는 4.6kcal/mol H이고 역방향반응의 활성화에너지는 8.4kcal/mol H이다. 반응엔탈피는 25에서 $40^{\circ}C$영역에서 -3.8kcal/mol H 이다. 박막의 활성화에너지와 반응엔탈피값들은 덩어리의 경우에 비하여 조금 작았는데 이는 덩어리와 박막의 표면적의 차이에 의한것으로 추정된다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 A
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• pp.442-445
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• 1999

In this work, to detect of hydrogen in DI water in the generator area of nuclear power plants was fabricated Pd/Pt gate MISFET sensor using Pd membrane. $H_2$ permeation through Pd accounts for external mass transfer, surface adsorption and desorption, transitions to and from the bulk metal, and diffusion within the metal. The identification of pinholes in the generator area of plant is an important safety consideration, as hydrogen build-up gives rise to explosion. For this type of application the sensor needs to be isolated in DI water, accordingly, a Pd membrane was used to separate the DI water. The hydrogen in the DI water was then absorbed on the Pd thin film and diffused into the oil through the thin film. The Pd/Pt gate MISFET sensor, encapsulated by oil, will thereby detect permeated hydrogen.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.371-372
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• 2012

We have studied lead-based gapless semiconductors, $PbPdO_2$, which is very sensitive to external parameters such as temperature, pressure, electric field, etc[1]. We have fabricated pure $PbPdO_2$, Co- and Mn-doped $PbPdO_2$ thin films using the pulsed laser deposition. Because of the volatile element of Pb, it is very difficult to grow the films. Note that in case of $MgB_2$, Mg is also volatile element. So in order to enhance the quality of $MgB_2$, some experiments are carried out in annealing with Mg-rich atmosphere [2]. This annealing process with volatile element plays an important role in making smooth surface. Thus, we applied such process to our studies of $PbPdO_2$ thin films. As a result, we found the optimal condition of ex-situ annealing temperature ${\sim}650^{\circ}C$ and time ~12 hrs. The ex-situ annealing brought the extreme change of surface morphology of thin films. After ex-situ annealing with PbO-rich atmosphere, the grain size of thin film was almost 100 times enlarged for all the thin films and also the PbO impurity phase was smeared out. And from X-ray diffraction measurements, we determined highly crystallized phases after annealing. So, we measured electrical and magnetic properties. Because of reduced grain boundary, the resistivity of ex-situ annealed samples changed smaller than no ex-situ sample. And the carrier densities of thin films were decreased with ex-situ annealing time. In this case, oxygen vacancies were removed by ex-situ annealing. Furthermore, we will discuss the transport and magnetic properties in pure $PbPdO_2$, Co- and Mn-doped $PbPdO_2$ thin films in detail.

• E2M - 전기 전자와 첨단 소재
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• 제8권3호
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• pp.278-284
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• 1995

Thin fihn SnO$_{2}$ Gas Sensor was fabricated by electron-beam evaporation system and the target made by general firing method for the purpose of detecting gas components in air, especially methane gas. SnO$_{2}$ thin film was prepared on the polished alumina substrate which Pt interdigital electrode was precoated. The effects of annealing temperature and substrate temperature on the structural properties of SnO$_{2}$ thin film on glass were investigated using the X-ray diffraction. The good crystalline structure is formed when substrate temperature is 150[.deg. C] and annealing condition is 550[.deg. C], 1[hour]. And the sensing properties at various thickness of the SnO$_{2}$ thin film and the effects of PdCI$_{2}$ addition were also investigated. The good result is showed when the thickness is below 1000[.angs.] and the quantity of PdCI$_{2}$ addition is 4[wt%]. The thickness of SnO$_{2}$ thin film was measured by .alpha.-step and Elliopsometer.

• 대한금속재료학회지
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• 제47권6호
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• pp.372-377
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• 2009

We report on hysteresis behavior in the electrical resistance-hydrogen concentration of Pd thin films. The variation of the electrical resistance has been investigated during the process of absorption and desorption of hydrogen gas ($H_{2}$) as a function of thickness of Pd thin films. The hysteresis behavior in the electrical resistance with $H_{2}$ concentration was found for Pd thin films and consists of $\alpha$ phase, ${\alpha}+{\beta}$ phase, and $\beta$ phase regions. The sensitivity of Pd thin films with $H_{2}$ concentration was found to follow Sieverts' law in the $\alpha$ phase region. However, the sensitivity was observed to increase abruptly with $H_{2}$ concentration in the ${\alpha}+{\beta}$ phase co-exist region. This is because Pd-H interaction is stronger in the $\beta$ phase than in the $\alpha$ phase and needs a higher concentration gradient as a driving force to desorb. The formation of the $\beta$ phase also was observed to cause the structural change because of the lattice expansion during absorption. The hysteresis height and the trace of structural change were affected by the thickness of the Pd film. As the film becomes thinner, the hysteresis height becomes lower and the amount of delamination on the surface becomes smaller. For films thinner than 20 nm in thickness, the delamination was not found but electrical resistance hysteresis was still observed.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1991년도 춘계연구발표회 논문개요집
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• pp.77-78
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• 1991

• 전기화학회지
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• 제5권2호
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• pp.68-73
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• 2002

상용 고분자 전해질인 Nafion 115 및 Nafion 117막 위에 do magnetron sputtering방법으로 Pd박막을 다양한 두께로 증착한 다음, 개질된 고분자 전해질 막의 morphology, proton 전도도(conductivity), 메탄을 투과도(permeability)를 측정하였으며, membrane and electrode assemblies(MEA)를 구성하여 DMFC 단위전지 성능을 측정하였다. Pd 박막은 Nafion막이 지니고 있는 단점인 메탄을 crossover에 대한 barrier로서 작용하였지만, 동시에 Nafion막의 고유 특성인 proton전도도의 감소를 가져왔다. Pd박막에 의하여 개질된 Nafion막의 메탄올에 대한 투과도와 proton전도도는 Nafion 막 상에 증착된 Pd 박막의 두께가 증가할수록 직선적으로 감소하는 경향을 나타냈다 개질된 Nafon 막을 사용하여 제작한 direct methanol fuel cell(DMFC)단위전지의 성능은 전체적으로 약간 저하되었다.

• 한국자기학회지
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• 제11권3호
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• pp.109-113
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• 2001

Presently, an inductor adapted at MMIC (Monolithic Microwave Integrated Circuit) which is used for cellular phone or PHS operates at quasi-microwave range over 800 MHz. However, a W-CDMA (Wideband Code Division Multiple Access) will use about 2 GHz range. Therefore magnetic film device should be compatible up to 2 GHz. We have deposited Co-Pd-Al-O system film using rf sputtering method which is expected up to 2 GHz, and investigated the effect of Pd content and magnetic field annealing. When Pd composition is 19%, Hk was 118 Oe, and ${\mu}$′showed flat frequency characteristics up to 1.5 GHz. The Q factor (=${\mu}$′/${\mu}$") was 23.3 at 1 GHz, 6.7 at 1.5 GHz and 1.5 at 2 GHz, respectively. Resonance frequency was 2 GHz. Therefore Co-Pd-Al-O thin film could be used at over 1 GHz, and also expected as an inductor material for wide band CDMA type cellular phone.