• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2011.05a
• /
• pp.149-150
• /
• 2011

미세화된 반도체 배선에 무전해 은도금을 적용하고자 새로운 Pd 활성화 공정을 제안하였다. 시편 표면에 작은 크기의 Pd 입자를 균일하게 분포시키기 위하여 Pd 활성화 도중 초음파을 가하였다. 추가적인 무전해 은 도금을 실시하여, 초음파에 의한 Pd 입자 분산이 은도금 피막 형성에 미치는 영향에 대하여 고찰하였다.

• Korean Journal of Materials Research
• /
• v.6 no.1
• /
• pp.124-129
• /
• 1996

TiN 기판상에 CVD와 무전해 도금을 이용하여 구리막을 성장시킬 때 여러 가지 전처리에 따른 증착 양상의 변화에 관하여 조사하였다. Cu(hfac)2를 선재(precursor)로 사용하여 CVD 증착을 실시할 때 각 전처리에 따른 TiN상의 구리막의 덮힘성(coverage)향상은 Pd-HF 활성화 처리>>HF dip> RF remote plasma의 순이었다. 특히 Pd-HF 활성화 처리를 해줄 경우 거의 완전한 연속막을 얻을수 있었으며 scotch tape peel test 결과 매우 양호한 부착특성을 보였으나, 이에 비해 전처리를 해주지 않은 경우에는 오랜 시간이 경과되어도 연속막으로 성장하지 못하고 섬모양의 큰 결정립을 이룰 뿐이었다. 이러한 차이는 Pd-HF 활성화 처리에 의해 표면에 미세하게 형성된 Pd층이 구리의 핵생성과 부착특성을 크게 향상시켰기 때문인 것으로 사료되며 이러한 효과는 무전해 도금의 경우에도 마찬가지였다. 그리고 기판과 증착온도에 따른 선택성을 보면 35$0^{\circ}C$이하에서는 pd-HF 활성화 처리에 의해서 SiO2에 대하여 TiN으로의 선택성을 가지나 그 이상의 온도에서는 선택성이 상실되었다.

• Transactions of the Korean hydrogen and new energy society
• /
• v.9 no.3
• /
• pp.127-133
• /
• 1998

This study was conducted to know to the effect of Pd film($180{\AA}$ thick) evaporation condition on the kinetics of hydrogen absorption-desorption. The activation energy of the forward reaction, the activation energy of the backward reaction, and the enthalpy were calculated by hydrogen absorption-desorption in ${\alpha}$-phase.($25{\sim}50^{\circ}C$ temperature) The activation energy of the forward reaction of Pd film, which is made at room temperature, is $6.4{\pm}0.4$ kcal/mol H and of the backward reaction $8.4{\pm}1.5$ kcal/mol H, which yields the reaction enthalpy -2kcal/mol H. The activation energy of forward reaction of Pd film, which is made at $300^{\circ}C$, is $-0.18{\pm}0.61$ kcal/mol H and of the backward reaction $-0.17{\pm}2.3$ kcal/mol H. The sample of $300^{\circ}C$ is more stable than the sample of room temperature in its struciural compactness and resistance value but standard error of result of $300^{\circ}C$ sample is higher than sample of room temperature do.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2001.04a
• /
• pp.18-19
• /
• 2001

• Transactions of the Korean hydrogen and new energy society
• /
• v.9 no.1
• /
• pp.25-30
• /
• 1998

4-probe resistivity measurement technique was used to study kinetics of hydrogen absorption on Pd film ($180{\AA}$ thick) in the ${\alpha}$ phase. Hydrogen gas was introduced to the activated Pd film. For very low hydrogen concentration the following rate law is valid in ${\alpha}$ phase very thin Pd film $$v=k\frac{1}{1+KX{_H}}PH{_2}-k^{\prime}\frac{KX{_H}{^2}}{1+KX{_H}}$$ which is similar to that of bulk. The activation energy of the forward reaction is 4.6kcal/mol H and of the backward reaction 8.4kcal/mol H, which yields the reaction enthalpy -3.8kcal/mol H in the temperature range between 25 and $40^{\circ}C$. The values of activation and enthalpy of thin film are rather smaller than that of bulk sample. This may be due to surface area difference between bulk and film.

• Transactions of the Korean hydrogen and new energy society
• /
• v.10 no.4
• /
• pp.191-196
• /
• 1999

4-probe resistivity measurement technique was used to study hydrogen A-D(Absorption-Desorption)kinetics on Pd films(18 to 67nm thick) from 25 to $50^{\circ}C$, from 0 to 5 torr hydrogen pressure. Pd films were made on sapphire substrate by thermal evaporation technique under high vacuum at room temperature. Upto about 100 hydrogen A-D cyclings, no pulverization was observed, but film was detached partially from substrate. Forward reaction and backward reaction rate were analyzed separately. The activation energies of hydrogen A-D processes were obtained from the Arrhenius plot of the reaction rates. The activation energies of Pd films are not strongly dependent on the thickness of the film. But the activation energy of very thin film( l8nm thick) was smaller than the others.

• Journal of the Korean Chemical Society
• /
• v.35 no.4
• /
• pp.362-367
• /
• 1991

Rates of nucleophilic substitution reaction ([Pd (ONN) Cl] + Y$^-\;{\rightleftharpoons}$ [Pd (ONN)Y] + Cl$^-$ ; Y = SCN$^-$, CN$^-$, N$_3^-$, imidazole, pyridine) have been measured in methanol by spectrophotometric method at various temperatures. A set of nucleophilic reactivity constants, n$_{Pd}^{\circ}$ has been calculated. These values show an order of nucleophilicity CN$^-$ > SCN$^-$ > N$_3^-$ > Imidazole > Pyridine. The enthalpy of activation are small positive values and the entropy of activation are large negative values. From these results, it can be inferred that the nucleophilic substitution reaction proceeds through an associative (A) mechanism.

• Journal of the Korean Chemical Society
• /
• v.50 no.5
• /
• pp.369-373
• /
• 2006

Arylation reactions of styrene catalyzed by Pd(CF3CO2)2-sulfides and Pd(CF3CO2)2-phosphines were investigated. The yield of trans-stilbene, the main product, increased as the basicity of the substituents on the aryl groups of the phosphines increased and the steric hindrance of the substituents decreased. The mechanism of the aryl migration of arylphosphines to styrene is proposed to involve the electrophilic attack of Pd to the phenyl group on the phosphines. The phosphine systems were found to be more effective than the sulfide ones.

• Transactions of the Korean hydrogen and new energy society
• /
• v.17 no.2
• /
• pp.234-240
• /
• 2006

Al film(135.5 nm thick) with Pd film(39.6 nm thick) on the top of it was made by thermal evaporation method. Hydrogen absorption of Al/Pd film was measured by quartz crystal microbalance(QCM) method at room temperature. The sample was activated by hydrogen absorption and desorption cycling at room temperature. Hydrogen was introduced into the film by increasing hydrogen gas pressure step by step up to 640 torr at room temperature. Hydrogen concentration reached up to 25% at $5{\sim}10$ torr. But at high pressure the concentration decreased. This strange tendency was not understood yet. Further study is needed to find out the mechanism of hydrogen absorption in Al in Al/Pd film.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2001.07a
• /
• pp.88-89
• /
• 2001