• Title/Summary/Keyword: PbTe

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Electrical Characteristics of MIS Type $Pb_{1-x}Sn_xTe$ (MIS형 $Pb_{1-x}Sn_xTe$ Diode의 전기적 특성에 관한 연구)

  • Kim, Tae-Seoung;Park, Jong-Kun;Yeo, In-Seon;Lee, Jin;You, Rim
    • Proceedings of the KIEE Conference
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    • 1987.11a
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    • pp.187-190
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    • 1987

  • This paper is for the charge storage effect and C-V characteristics of MIS type diode which is the basic structural unit of charge-coupled device after growing the $Pb_{1-x}Sn_xTe$ crystal. $Pb_{1-x}Sn_xTe$ singlecrystal dbtained from the horizental furnace using Bridgman method. To judge whether the grown singlecrystal is suitable for specimen or not, it was investigated by X-ray diffraction analysis, thermogravimetry and differential thermal analysis. The C-V characteristics of the specimen caused to anodic oxidation was the best when the insulator film's depth was 250[$\AA$]. Measuring the C-V characteristics aftermanufacturing MIS type diode resulted that the whole capacitance was the largest when the supply voltage was low, 0.3[V] and the capacitance also varied according to the variance frequence when the supply voltage is over 0.5[V]. From the above result, even if the supply voltage is low, the $Pb_{1-x}Sn_xTe$ also have a good charge storage effect.

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Effect of Pb Doping on the Thermoelectric Properties of Bi0.48Sb1.52Te3 (Bi0.48Sb1.52Te3의 열전특성에 대한 Pb 도핑 영향)

  • Moon, Seung Pil;Kim, Tae Wan;Kim, Sung Wng;Jeon, Woo Min;Kim, Jin Heon;Lee, Kyu Hyoung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.7
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    • pp.454-458
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    • 2017

  • $Bi_2Te_3$-based alloys have been intensively investigated as active materials for thermoelectric power generation devices from low-temperature (< $250^{\circ}C$) waste heat. In the present study, we fabricated Pb-doped, p-type $Bi_{0.48}Sb_{1.52}Te_3$ polycrystalline bulks by using meltsolidification and spark plasma sintering techniques, and evaluated their thermoelectric transport properties in an effort to develop optimized composition for low-temperature power generation applications. The electronic and thermal transport properties of $Bi_{0.48}Sb_{1.52}Te_3$ could be manipulated by Pb doping. As a result, the temperature for a peak thermoelectric performance (zT) gradually shifted toward higher temperatures with Pb content, suggesting that thermoelectric power generation efficiency can be enhanced by controlled Pb doping.

  • https://doi.org/10.4313/JKEM.2017.30.7.454 인용 PDF KSCI