• Title/Summary/Keyword: PbSnSe

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Growth and Optical Properties of PbSnSe Epilayers Grown on BaF2(111) (PbSnSe 단결정 박막의 성장과 광학적 특성)

  • Lee, Il-Hoon
    • Journal of Korean Ophthalmic Optics Society
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    • v.9 no.1
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    • pp.35-41
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    • 2004
  • This study investigated the crystal growth, crystalline structure and the basic optical properties of $PbSnSe/BaF_2$ epilayers. The PbSnSe epilayer was grown on $BaF_2$(111) insulating substrates using a hot wall epitaxy (HWE) technique. It was found from the analysis of X-ray diffraction patterns that $PbSnSe/BaF_2$ epilayer was grown single crystal with a rock-salt structure oriented along [111] the growth direction. Using Rutherford back scattering, the atomic ratios of the PbSnSe was found to be proper stoichiometric. The best values for the full width at half maximum (FWHM) of the DCXRD was 162 arcsec for PbSnSe epilayer. The epilayer-thickness dependence of the FWHM of the DCXRD shows that the quality of the $PbSnSe/BaF_2$ is as expected. The dielectric function ${\varepsilon}(E)$ of a semiconductor is closely related to its electronic energy band structure and such relation can be drawn from features around the critical points(CPs) in the optical spectra. The real and imaginary parts(${\varepsilon}1$ and ${\varepsilon}2$) of the dielectric function ${\varepsilon}$ of PbSe were measured, and the observed spectra reveal distinct structures at energies of the E1, E2 and E3 CPs. These data are analyzed using a theoretical model known as the model dielectric function (MDF). The optical constants related to dielectric function such as the complex refractive index ($n^*=n+ik$), absorption coefficient (${\alpha}$) and normal-incidence reflectivity (R) are also presented for $PbSnSe/BaF_2$.

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P-type and N-type $Bi_2Te_3/PbTe$ Functional Gradient Materials for Thermoelectric Power Generation

  • Lee, Kwang-Yong;Oh, Tae-Sung
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09b
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    • pp.1223-1224
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    • 2006
  • The p-type $(Bi_{0.2}Sb_{0.8})_2Te_3/(Pb_{0.7}Sn_{0.3})$Te functional gradient material (FGM) was fabricated by hot-pressing the mechanically alloyed $(Bi_{0.2}Sb_{0.8})_2Te_3$ and the 0.5 at% $Na_2Te-doped$ $(Pb_{0.7}Sn_{0.3})Te$ powders. Also, the n-type $Bi_2(Te_{0.9}Se_{0.1})_3/PbTe$ FGM was processed by hot-pressing the mechanically alloyed $Bi_2(Te_{0.9}Se_{0.1})_3$ and the 0.3 wt% Bi-doped PbTe powders. With ${\Delta}T$ larger than $300^{\circ}C$, the p-type $(Bi_{0.2}Sb_{0.8})_2Te_3/(Pb_{0.7}Sn_{0.3})Te$ FGM exhibited larger thermoelectric output power than those of the $(Bi_{0.2}Sb_{0.8})_2Te_3$ and the 0.5 at% $Na_2Te-doped$ $(Pb_{0.7}Sn_{0.3})Te$ alloys. For the n-type $Bi_2(Te_{0.9}Se_{0.1})_3/PbTe$ FGM, the thermoelectric output power superior to those of the $Bi_2(Te_{0.9}Se_{0.1})_3$ and the 0.3 wt% Bi-doped PbTe was predicted at ${\Delta}T$ larger than $300^{\circ}C$.

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Pb-free Status and Strategy of Semiconductor Business in Samsung Electronics

  • Jeong Se-Young
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2004.09a
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    • pp.79-92
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    • 2004
  • RoHS compliant products are now being mass-produced. Eco-product(Pb-free+RoHS compliant+Halogen-free) will be possible from 2005. Pb-free flip chip will be qualified by 2004. 4Q. Lead Finish: SnBi-Under mass production Pd PPF-Under small production Matte Sn-will be internally qualified by 2004. 4Q Development of Pb-free Solder Ball: Stable Supply, Cost Down.

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Effects of Alloying Elements on the Corrosion Layer Formation of Pb-Grid/Active Materials Interface (Pb 기판/활물질 계면의 부식층형성에 미치는 합금원소영향)

  • Oh, Se-Woong;Choe, Han-Cheol
    • Journal of Surface Science and Engineering
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    • v.40 no.5
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    • pp.225-233
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    • 2007
  • Effects of alloying elements on the corrosion layer formation of Pb-grid/active materials interface has been researched for improvement of corrosion resistance of Pb-Ca alloy. For this research, various amounts of alloying elements such as Sn, Ag and Ba were added to the Pb-Ca alloys and investigated their corrosion behaviors. Batteries fabricated by using these alloys as cathode grids were subjected to life cycle test. Overcharge life cycle test was carried out at $75^{\circ}C$, 4.5 A, for 110 hrs. with KS standard (KSC 8504). And then, after keeping the battery with open circuit state for 48 hr, discharge was carried out at 300A for 30 sec. Corrosion morphology and interface between Pb-grid and active materials were investigated by using ICP, SEM, WDX, and LPM. Corrosion layer of Pb-Ca alloy got thicken with increasing Ca content. For Pb-Ca-Sn alloy, thickness of corrosion layer decreased as Sn and Ag content increased gradually. In case of Pb-Ca-Sn-Ba alloy, thickness of corrosion layer decreased up to 0.02 wt% Ba addition, whereas, it was not changed in case of above 0.02 wt% Ba addition.

Distribution and Characterization of Heavy Metals in Human Kidney Cortex and Kidney Medulla (인체 신장피질과 신장수질에서 중금속류의 분포 및 특성)

  • 유영찬;이상기;양자열;김기욱;이수연;정규혁
    • YAKHAK HOEJI
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    • v.45 no.5
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    • pp.460-467
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    • 2001
  • Heavy metals, such as Al, As, Cd, Cr Cu, Fe, Hg, Mn, Mo, Ni, Pb, Se, Si, Sn, V and Zn, were analysed on kidney cortex and medulla of Korean obtained from 154 forensic medical autopsy cadavers. Heavy metals were analysed by inductively coupled plasma atomic emission spectrometry In kidney cortex, the concentrations of Al, Cd, Cu, Mn, Mo, Pb, Se, Si and Zn were significantly higher than in the kidney medulla (Cd, Cu, Mn, Mo, Zn : p<0.01, AA, Pb, Se, Si : p<0.05). No significant local differences were found between kidney cortex and kidney medulla in the concentrations of As, Cr Fe, Hg, Ni, Sn and V. In kidney cortex and kidney medulla, Cd concentrations correlated positively with age, but Mn concentrations correlated negatively with age. A significantly positive correlation between Cd and Zn, Cd and Cu, Zn and Cu, Al and Si, Se and As was found in kidney cortex and kidney medulla. A significantly positive correlation between Hg and Se was only observed in kidney cortex. These results indicate that the distribution of hazardous heavy metals is similar to that of essential elements in the tissues.

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A Study on the Mineral Contents in Edible Mushrooms Produced in Korea (한국산 식용버섯의 무기성분 함량에 관한 연구)

  • 안장수;이규한
    • Journal of Food Hygiene and Safety
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    • v.1 no.2
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    • pp.177-179
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    • 1986
  • ABSTRACT$.$Seven species of mushrooms (Sarcodon asparatus, Agaricus bisporus. Calocybe gambosa, Len tin us ,edodes.Ramariabotrytis.Pleurotus ostreatus and Tricholoma matsutake) produced in Korea were investigated on their mineral contents mainly by using Inductively coupled plasma-technique. The obtained results are summerized as follows: 1) Fe, N a and Zn are relativel highly contained in almost all mushrooms tested in this study. 2) Harmful elements such as Cd, Hg. Pb and As, were found only in trace amounts. 3) Sb, Se and Sn were not detected in all mushrooms.hrooms.

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Elemental concentrations of atmospheric particles in Cheonan during 2006 (2006년 천안시 대기 입자의 원소 성분 특성)

  • Oh, Se-Won
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.9 no.6
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    • pp.1782-1786
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    • 2008
  • To investigate the characteristics of elemental components of atmospheric particles in Cheonan, atmospheric particles were sampled using a high volume air sampler equipped with a 5-stage cascade impactor during 2006. 16 elemental concentrations in fine and coarse particles were determined using ICP-AES and ICP-MS. The total mass concentrations of fine and coarse particles were 33.23 and $20.66{\mu}g/m3$, respectively, and the total elemental concentrations were 1.27, $1.71{\mu}g/m3$, occupying 3.8 and 8.3% of the total mass. Fe, Al, Ti were the most abundant elements in both fine and coarse particles, and the total Pb concentration was 84.55ng/m3, below the National standard. Enrichment factor for Sc, Cr, Cu, Zn, As, Se, Sn, Pb in fine particles were above 1,000. This indicates that the elements in fine particles are mainly from the anthropogenic sources including automobiles.

Synthesis of Nanoscale Sn-Pb Alloy Powders by Electrical Explosion of Wire (전기선폭발법을 이용한 Sn-Pb 나노분말의 합성)

  • ;;;;A. P. Ilyin;D. V. Tichonov
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2003.04a
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    • pp.35-35
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    • 2003
  • )를 금속와이어에 인가하면 저항발열에 의해 와이어가 미세한 입자나 금속증기상태로 폭발하는 현상을 이용한 것으로 기상합성법에 속한다고 할 수 있다. 선폭법은 다른 제조법에 비해 공정이 간단하여 생산비용이 저렴하며, 원재료의 조성을 갖는 분말의 합성과 금속간화합물, 융점차이가 나는 재료의 합금화 등이 가능하다. 인가에너지의 크기와 폭발 시 분위기를 제어함으로써 분말의 평균크기와 분포 제어 또한 가능하다. 본 연구는 러시아의 우수한 기초기술을 바탕으로 Pb-Sn계 합금은 전기폭발법으로 극미세분말을 제조하였으며, 분말의 형상, 상 화학조성의 변화를 조사하였다. 본 실험에 사용된 Sn-Pb계(All-Union State Standard 1499-70, 0.53mm)합금와이어는 자동시스템(1-0.6Hz)에 의해 챔버안으로 공급되었다. 이 때 임계폭발 와이어 길이는 50-80nm으로 실험을 행하였다. 챔버 압력은 1.4~2.0atm으로 유지하였다. 제조된 분말의 특성은 XRD, XRPES, SEM등을 이용하여 분말의 형상과 상, 화학조성, 표면분석을 행하였으며 DSC, TGA, BET분석을 통하여 온도변화에 따른 금속분말의 열량변화, 질량변화, 비표면적을 측정하였다. 제조된 Sn-Pb계 분말은 모두 평균 입도 117nm~220nm의 구형형상이었다. 이때 합금분말의 조성은 51.17~63.21 at%Sn, 35.47~46.37 at%Pb로 나타났다. 와이어에 인가되는 비에너지(W/Wc)가 감소된에 EK라 표면층의 Pb함량이 증가함을 보였다. 이는 와이어 내부 저항의 감소로 인한 공정시간의 지연과 Sn, Pb의 확산계수 차이에 의한 것으로 사료된다. 열분석 결과, Sn~Pb계 화합물의 융점은 167~$169^{\circ}C$로 관찰되었으며, $10^{\circ}C$/min로 $920^{\circ}C$까지 승은 하였을 때 17.1~18 wt%의 질량증가를 보였다.TEX>계 나노복합분말이 얻어짐을 알 수 있었다. 이 때 X션 회절피크의 line broadening으로부터 복합분말의 Fe 명균 결정립 크기는 24nm로 초미세 결정럽의 분말합금이었다. 포화자화값은 볼밀처리에 따라 점점 증가하여 MA 30시간에는 20.3emu/g로 포화됨을 알 수 있었다. 또한 보자력 Hc는 MA초기단계에 350e로 매우 낮으나 30시간 후에는 Hc값이 2600e로 매우 큰 값을 나타내었다. 이것은 환원반응결과 초기에 생성된 Fe의 결정립이 비교적 크고 결정결함이 적으나 볼밀처리를 30시간까지 행하면 Fe 결정렵의 미세화 빛 strain 증가로 magnetic hardening이 일어나기 때문인 것으로 사료된다.길이가 50, 30cm인 압출재를 제조하였다. 열간압출한 후의 미세조직을 광학현미경으로 압출방향에 평행한 방향과 수직방향으로 관찰하였고, 열간 압출재 이방성을 검토하기 위하여 X선 회절분석을 실실하여 결정방위를 확인하였다. 전기 비저항 및 Seebeck 계수 측정을 위하여 각각 2$\times$2$\times$10$mm^3$ 그리고 5$\times$5$\times$10TEX>$mm^3$ 크기의 시편을 준비하였다.준비하였다.전류를 구성하는 주요 입자의 에너지 영역(75~l13keV)에서 가장 높은(0.80) 상관계수를 기록했다. 넷째, 회복기 중에 일어나는 입자들의 유입은 자기폭풍의 지속시간을 연장시키는 경향을 보이며 큰 자기폭풍일수록 현저했다. 주상에서 관측된 이러한 특성은 서브스톰 확장기 활동이 자기폭풍의 발달과 밀접한 관계가 있음을 시사한다.se that were all low in two aspects, named "the Nonsignificant group". And the issues were high risk perception in general setting and lo

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Flip Chip Interconnection-UBM and Material Issues

  • Jang, Se-Young
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2003.09a
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    • pp.193-215
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    • 2003
  • Fracture Mechanism of Flip Chip Electromigration Failure - Mostly caused by Cathode Depletion at the UBM/Solder Interface Guideline to Increase Electromigration Resistance Material Selection: Sn/Ag(/Cu) > Pb/63Sn Cu UBM > Ni UBM (but, Solder Material combination) UBM Design: thick UBM is preferable (but, Stress Issue) Pad open/UBM size: as large as possible (but, pad size & pitch limit)

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Influence of Thermal Aging at the Interface Cu/sn-Ag-Cu Solder Bump Made by Electroplating (전해도금에 의해 형성된 Sn-Ag-Cu 솔더범프와 Cu 계면에서의 열 시효의 영향)

  • Lee, Se-Hyeong;Sin, Ui-Seon;Lee, Chang-U;Kim, Jun-Gi;Kim, Jeong-Han
    • Proceedings of the KWS Conference
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    • 2007.11a
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    • pp.235-237
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    • 2007
  • In this paper, fabrication of Sn-3.0Ag-0.5Cu solder bumping having accurate composition and behavior of intermetallic compounds(IMCs) growth at interface between Sn-Ag-Cu bumps and Cu substrate were studied. The ternary alloy of the Sn-3.0Ag-0.5Cu solder was made by two binary(Sn-Cu, Sn-Ag) electroplating on Cu pad. For the manufacturing of the micro-bumps, photo-lithography and reflow process were carried out. After reflow process, the micro-bumps were aged at $150^{\circ}C$ during 1 hr to 500 hrs to observe behavior of IMCs growth at interface. As a different of Cu contents(0.5 or 2wt%) at Sn-Cu layer, behavior of IMCs was estimated. The interface were observed by FE-SEM and TEM for estimating of their each IMCs volume ratio and crystallographic-structure, respectively. From the results, it was found that the thickness of $Cu_3Sn$ layer formed at Sn-2.0Cu was thinner than the thickness of that layer be formed Sn-0.5Cu. After aging treatment $Cu_3Sn$ was formed at Sn-0.5Cu layer far thinner.

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