• 마이크로전자및패키징학회지
• /
• 제10권4호
• /
• pp.47-52
• /
• 2003

PDP전극용 Ag전극 페이스트의 프릿으로 기존의 Pb-based 프릿을 대신 할 수 있는 Bi-based 조성의 새로운 유리조성의 가능성을 검토하였다. PDP디스플레이 응용을 위해 프릿의 저융점화 및 열팽창계수 제어를 행하였고, 이를 전극 페이스트 제조에 적용하여 스크린 프린팅된 전극을 평가하였다. $Bi_2O_3$를 50-60wt%이상 첨가된 $Bi_2O_3-B_2O_3-Al_2O_3$계 조성의 프릿은 연화점이 400∼$480^{\circ}C$, 열팽창계수가 7.31∼$10.02\times 10^{-6}/^{\circ}C$이며, 전극의 단자저항은 4.1∼4.8$\Omega$ 이었다. 본 연구에서 새로이 개발된 Bi계 프릿조성은 Pb계 조성의 프릿에 상당하는 물성을 얻을 수 있었으며, 이를 전극용 페이스트에 적용한 결과, 전극 프린팅에서 퍼짐성과 균일성이 우수하였다. PDP전극용 무연, 무 알카리 프릿으로 Bi계 조성의 적용가능성을 확인할 수 있었다.

• 한국세라믹학회지
• /
• 제48권5호
• /
• pp.467-470
• /
• 2011

Pb(Zr,Ti)$O_3$ (PZT) based ceramics with superior piezoelectric properties have been extensively used in various domestic and industrial appliances. However, PZT ceramics causing environmental contamination and health problems need to be eventually replaced by any of Pb-free materials. $(Na_{0.53}K_{0.47})(Nb_{1-x}Ta_x)O_3$ (NKNT), one of Pb-free piezoelectric ceramics, has long been known but its properties are not fully understood and developed. In this study, dielectric and piezoelectric properties of Pb-free NKNT ceramics were studied with Ta substitution for B-site at x = 0~0.6. It was found that polymorphic phase transition (PPT) between orthorhombic and tetragonal phases was notably influenced by Ta substitution. The highest piezoelectric coefficient ($d_{33}$) of 284 pC/N was occurred at x = 0.45.

• Journal of Electrochemical Science and Technology
• /
• 제2권2호
• /
• pp.76-84
• /
• 2011

Potentiostatic oxidation of Pb-1.7%Sb alloy used in the manufacture of grids of lead-acid batteries over the potential range from -1.0V to 2.3V in 5M $H_2SO_4$ in the absence and the presence of 0.4M $H_3PO_4$ and the self-discharge characteristics of the oxide layer formed is studied by electrochemical impedance spectroscopy (EIS). Depending on the potential value, sharp variations in resistance and capacitance of the alloy are recorded during the oxidation and they can be used for identification of the various substances involved in passive layer. Addition of $H_3PO_4$ is found to deteriorate the insulating properties of the passive layer by the retardation of the formation of $PbSO_4$. $H_3PO_4$ completely inhibits the current and impedance fluctuations recorded in $H_3PO_4$-free solutions in the potential range 0.5 V-1.7 V. These fluctuations are attributed to the occurrence of competitive redox processes that involve the formation of $PbSO_4$, $PbOSO_4$, PbO and $PbO_2$ and the repeated formation and breakdown of the passive layer. Self-discharge experiments indicate that the amount of $PbO_2$ formed in the presence of $H_3PO_4$ is lesser than in the $H_3PO_4$-free solutions. The start of transformation of $PbSO_4$ into $PbO_2$ is greatly shortened. $H_3PO_4$ facilitates the diffusion process of soluble species through the passive layer ($PbSO_4$ and basic $PbSO_4$) but impedes the diffusion process through $PbO_2$.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
• /
• pp.1225-1228
• /
• 2006

In the CNT paste for field emission, PbO frit had a fatal influence on CNTs by accelerating a decomposition of CNTs during firing. In the thermogravimetric analysis on the mixtures of CNTs and other ingredients, it was evident that CNTs began to burn out at ${\sim}350^{\circ}C$ by reacting with PbO. This problem was overcome by replacing the PbO frit by the Pb-free frit such that most of CNTs could survive during firing. Consequently, the emission current of the CNT paste prepared using the lead-free frit was improved as much as 250 %, compared to the PbO-containing one. The CNT paste was further optimized by adding a dispersant, whose dispersibility was assessed by measuring the resistance of the paste. With 10% dispersant added, the emission properties of the paste was greatly enhanced as 50 times higher as those of the paste without a dispersant.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
• /
• pp.216-217
• /
• 2005

In this paper, in order to develop Pb-free piezoelectric ceramics, $(Li_{0.05}Na_{0.57}K_{0.38})NbO_3$ ceramic was fabricated with the variation of $Bi_2O_3$ addition. Piezoelectric properties of the ceramic were varied with the amount of $Bi_2O_3$ addition and showed the maximum kp value at.0.2 wt% $Bi_2O_3$ addition. Qm of $Bi_2O_3$ added ceramics showed lower values than the non-added ceramics, however, the kp was increased by the addition of $Bi_2O_3$ up to 0.2 wt%. At the sintering temperature of 1110$^{\circ}C$ and the calcination temperature of 850$^{\circ}C$, the optimal values of density=4.52g/$cm^3$, kp=0.47, $\varepsilon_r$=400 were obtained.

• 한국재료학회지
• /
• 제17권3호
• /
• pp.147-151
• /
• 2007

Cu-free multi-component sol, of which final oxide composition becomes $Bi_{1.9}Pb{0.35}SrCaO,\;Bi_{1.8}Pb_{0.2}SrCaO\;and\;Bi_{1.5}SrCaO$, respectively, was prepared through sol-gel route and coated on a bare Cu substrate. Starting materials were metal-alkoxides as follows.; [$Bi(OC_{2}H_{5})_{3}\;Pb(O^{1}C_{3}H_{7})_{2},\;Sr(O^{i}C_{3}H_{7})_{2},\;Ca(OC_{2}H_{5})_{2}$] as a reagent grade. Transparent light yellowish sol was obtained in the case of $Bi_{1.9}Pb_{0.35}SrCaO\;and\;Bi_{1.8}Pb_{0.2}SrCaO$ composition and $Bi_{1.5}SrCaO$ composition's sol was light greenish. Each sol was repeatedly dip-coated on Cu substrate four times and pre-heated at $400^{\circ}C$ and finally heat-treated in the range of $740{\sim}900^{\circ}C$. In the results, crystalline phases confirmed by XRD were (2201) orthorhombic and monoclinic phases. However, only $Bi_{1.9}Pb_{0.35}SrCaO_{x}$ composition showed pseudo-superconductive behavior after heat-treatment at $900^{\circ}C$ for 12 seconds and then onset temperature was 77 K, even though it did not exhibit zero resistance below Tc.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 추계학술대회 논문집
• /
• pp.174-174
• /
• 2009

현재 전자부품용으로 사용되는 유리프리트의 경우 PbO계를 주로 사용하고 있다. 최근 환경규제에 따른 PbO 사용이 제한됨에 따라 이를 대체할 Pb-free 유리 조성에 대한 연구가 활발히 진행 중이다. Pb-free계로서는 $Bi_2O_3$계, $B_2O_3$계가 주로 연구되고 있으나 소성 온도가 $500^{\circ}C$이상으로 높고 또한 $Bi_2O_3$ 계는 중금속이기 때문에 문제가 있다. 본 연구에서는 $400^{\circ}C$ 미만 소성이 가능한 SnO-$P_2O_5$계를 기본 조성계로 선택하고 열적, 전기적, 화학적 특성을 개선하기 위해 $R_2O_3$(R=Al, B), RO(R=Mg, Zn, Ca, Ba) 를 첨가하였다. 개선된 조성으로 샘플을 만들고 이를 대상으로 실제 전자부품 생산 공정에 적용 실험을 진행 하였다. 실험에 사용된 전자 부품은 소형 칩 베리스터로 생산 공정에서 코팅용 유리프리트와 파우더를 절연체로서 전면에 코팅하게 된다. 유리프리트를 코팅함으로서 누설 전류를 차단하고 생산 공정시 베리스터 내부를 보호하게 된다. 실험에 사용된 샘플의 열적 특성은 TMA로, 전기적 절연 특성은 고 절연저항 측정기로 측정하였고 내 산성과 내 알칼리성도 측정하였다. 샘플을 이용하여 완성된 칩 베리스터의 성능은 고온, 내습 신뢰성 TEST(고온:$150^{\circ}C$ 12HR, 내습:$85^{\circ}C$-85%12HR)로 실험하여 합부판정 (Leakage current <10uA)을 내려 완성품과 불량품을 가려내었다.

• 전기학회논문지P
• /
• 제55권1호
• /
• pp.31-34
• /
• 2006

A infrared rays sensor or ultrasonic sensor can detect the object at the narrow area, however a pressure sensor can detect man and animal at the wide area. It is necessary to manufacture the sensor by using Pb-free ceramics in the respect of environmental protection. Piezoelectric properties of ceramics added 0.2wt% $La_2O_3\;into\;0.96Bi_{0.5}(Na_{0.84}K_{0.16})_{0.5}+0.04SrTiO_3$ were 0.4 of kp, $31{\times}$10^{-3}Vm/N\;of\;g_{33}$. The output voltage of the pressure sensor is 0.48 V at 20 in$H_2O$. The output voltage of the pressure sensor with driving circuit is 9.8 V, 37 ms width.

• The Korean Journal of Ceramics
• /
• 제4권3호
• /
• pp.199-203
• /
• 1998

$Pb(Zr, Ti)O_3$ (Pb:Zr:Ti=1:0.52:0.48) thin films were prepared on single crystal MgO(100) substrates by dipping-pyrolysis process using a solution of constituent metal naphthenates as starting materials. The solution was spin-coated onto substrate and the precursor films were pyrolyzed at $200^{\circ}C$ in air or at $200^{\circ}C$ in argon for 1, 2, 5 and 24h, followed by final heat treatment at $750^{\circ}C$. For all the films, highly (h00)/(00l)-oriented Pb$Pb(Zr, Ti)O_3$ thin films with smooth surfaces and crack-free were obtained, whereas thin film pyrolyzed in air for 24 h exhibited polycrystalline character. According to the pole-figure analysis, epitaxy of the product films was found to depend on pyrolysis atmosphere.

• 한국세라믹학회지
• /
• 제48권1호
• /
• pp.63-68
• /
• 2011

The investigation is directed to lead free (Pb-free) frits that can be used for organic light emitting diode, plasma display screen devices and other sealing materials. $P_2O_5$-SnO system glasses have been prepared for Pb-free low temperature glass frit. Structure and properties of the glasses with the composition SnO-$xB_2O_3-(60-x)P_2O_5$ (x=0, 5, 10, 15, 20, 25, 30, 35, 40 mol%) were characterized by infrared spectra (IR), X-ray diffraction(XRD), Density, Molar volume, Thermo mechanical analysis(TMA) and weight loss after immersion test. Glass transition temperature($T_g$), dilatometric softening temperature($T_d$) and chemical durability increased, and coefficient of thermal expansion($\alpha$) decrease with the substitution of $B_2O_3$ for $P_2O_5$ in the range of 0~25 mol%.